公开(公告)号：US20190259639A1

公开(公告)日：2019-08-22

申请号：US16045786

申请日：2018-07-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi NAKAOKA ,  Tomohiko Sugita ,  Shinsuke Kimura ,  Hiroaki Ashidate ,  Katsuhiro Sato

IPC: H01L21/67

Abstract: A semiconductor processing device according to an embodiment includes a processing tank configured to store a chemical therein to allow a semiconductor substrate to be immersed in the chemical. A gas supply part is provided below the semiconductor substrate accommodated in the processing tank and is configured to supply air bubbles to the chemical from below the semiconductor substrate. A chemical supply part is provided above the gas supply part and below the semiconductor substrate and is configured to discharge the chemical caused to circulate from the processing tank, towards the air bubbles appearing from the gas supply part.

公开(公告)号：US20190214277A1

公开(公告)日：2019-07-11

申请号：US16357151

申请日：2019-03-18

Applicant: Toshiba Memory Corporation

Inventor： Yoshihiro Uozumi ,  Shinsuke Kimura ,  Yoshihiro Ogawa ,  Hiroyasu Iimori ,  Tatsuhiko Koide ,  Hideaki Hirabayashi ,  Yuji Nagashima

IPC: H01L21/67 ,  G03F7/40 ,  G03F7/16 ,  H01L21/68 ,  H01L21/677

CPC classification number: H01L21/67075 ,  G03F7/162 ,  G03F7/405 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67098 ,  H01L21/6715 ,  H01L21/67739 ,  H01L21/68

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

公开(公告)号：US10032658B2

公开(公告)日：2018-07-24

申请号：US15724744

申请日：2017-10-04

Applicant: Toshiba Memory Corporation

Inventor： Shinsuke Kimura ,  Yoshihiro Ogawa

IPC: H01L21/02 ,  H01L21/67 ,  B08B7/00 ,  B08B3/08

Abstract: A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.

公开(公告)号：US10290491B2

公开(公告)日：2019-05-14

申请号：US15670349

申请日：2017-08-07

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke Kimura ,  Tatsuhiko Koide ,  Yoshihiro Ogawa

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/67

Abstract: In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing.

公开(公告)号：US09991111B2

公开(公告)日：2018-06-05

申请号：US15827427

申请日：2017-11-30

Applicant: Toshiba Memory Corporation

Inventor： Yoshihiro Ogawa ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Hisashi Okuchi ,  Hiroshi Tomita

IPC: C23F1/00 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/0206 ,  H01L21/02043 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67028

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.

公开(公告)号：US10978316B2

公开(公告)日：2021-04-13

申请号：US16045786

申请日：2018-07-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi Nakaoka ,  Tomohiko Sugita ,  Shinsuke Kimura ,  Hiroaki Ashidate ,  Katsuhiro Sato

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677 ,  B08B3/10 ,  B08B3/08

Abstract: A semiconductor processing device according to an embodiment includes a processing tank configured to store a chemical therein to allow a semiconductor substrate to be immersed in the chemical. A gas supply part is provided below the semiconductor substrate accommodated in the processing tank and is configured to supply air bubbles to the chemical from below the semiconductor substrate. A chemical supply part is provided above the gas supply part and below the semiconductor substrate and is configured to discharge the chemical caused to circulate from the processing tank, towards the air bubbles appearing from the gas supply part.

公开(公告)号：US20180082832A1

公开(公告)日：2018-03-22

申请号：US15827427

申请日：2017-11-30

Applicant: Toshiba Memory Corporation

Inventor： Yoshihiro Ogawa ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Hisashi Okuchi ,  Hiroshi Tomita

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/0206 ,  H01L21/02043 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67028

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.

公开(公告)号：US09818627B2

公开(公告)日：2017-11-14

申请号：US15408554

申请日：2017-01-18

Applicant: Toshiba Memory Corporation

Inventor： Shinsuke Kimura ,  Yoshihiro Ogawa

IPC: H01L21/67 ,  B08B3/08 ,  B08B7/00

CPC classification number: H01L21/67051 ,  B08B3/08 ,  B08B7/0057 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/67057 ,  H01L21/6715

Abstract: A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.

公开(公告)号：US09748091B2

公开(公告)日：2017-08-29

申请号：US14836145

申请日：2015-08-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke Kimura ,  Tatsuhiko Koide ,  Yoshihiro Ogawa

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/02057 ,  H01L21/30604 ,  H01L21/67028 ,  H01L21/67109

Abstract: In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing.

公开(公告)号：US10573508B2

公开(公告)日：2020-02-25

申请号：US14836881

申请日：2015-08-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuhiko Koide ,  Shinsuke Kimura ,  Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/324

Abstract: In one embodiment, a surface treatment apparatus for a semiconductor substrate includes a holding unit, a first supply unit, a second supply unit, a third supply unit, a drying treatment unit, and a removal unit. The holding unit holds a semiconductor substrate with a surface having a convex pattern formed thereon. The first supply unit supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation. The second supply unit supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate. The third supply unit supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern. The drying treatment unit dries the semiconductor substrate. The removal unit removes the water repellent protective film while making the convex pattern remain.