公开(公告)号：US20190165291A1

公开(公告)日：2019-05-30

申请号：US15927544

申请日：2018-03-21

申请人： BOE Technology Group Co., Ltd.

发明人： YuJu Chen

IPC分类号： H01L51/50 ,  H01L51/52 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/502 ,  G02F1/1336 ,  H01L27/3223 ,  H01L27/3244 ,  H01L27/3246 ,  H01L51/0005 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0043 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5209 ,  H01L51/5225 ,  H01L51/5293 ,  H01L51/56 ,  H01L2251/558

摘要： Provided are a light emitting diode and a preparation method thereof, an array substrate, and an electronic device. The light emitting diode comprises: a substrate, and a first electrode, a quantum rod light emitting layer and a second electrode disposed in lamination on the substrate, wherein, the quantum rod light emitting layer comprises a plurality of quantum rods which present a directional arrangement.

公开(公告)号：US20190165274A1

公开(公告)日：2019-05-30

申请号：US15706146

申请日：2017-09-15

申请人： Google Inc.

发明人： Katy Kasmai ,  Haydn Kirk Vestal

IPC分类号： H01L51/00 ,  H01L51/42 ,  H01L51/44 ,  H01L27/28

CPC分类号： H01L51/0007 ,  C08K3/16 ,  C08K3/22 ,  C08K2003/2241 ,  C09D5/22 ,  C09D5/24 ,  C09D5/32 ,  C09D7/61 ,  C09D7/65 ,  C09D133/26 ,  C09D157/06 ,  C09D201/00 ,  F21S9/037 ,  H01G9/0029 ,  H01G9/0036 ,  H01G9/2013 ,  H01G9/2022 ,  H01G9/2031 ,  H01G9/204 ,  H01G9/2059 ,  H01G9/2068 ,  H01G9/2095 ,  H01L27/283 ,  H01L27/288 ,  H01L27/301 ,  H01L27/3225 ,  H01L27/3227 ,  H01L28/20 ,  H01L51/0004 ,  H01L51/0026 ,  H01L51/0037 ,  H01L51/004 ,  H01L51/0078 ,  H01L51/0575 ,  H01L51/4253 ,  H01L51/44 ,  H01L51/441 ,  H01L51/448 ,  H01L51/5016 ,  H01L51/5032 ,  H01M10/465

摘要： Processes and formulations for manufacturing a painted circuit are disclosed. In some implementations, a painted circuit can be manufactured using a process including providing a substrate and applying one or more paint layers on a surface of the substrate, where the one or more paint layers each form an electrical component of the painted circuit. A given paint layer of the one or more paint layers can include a conductive paint formulation having a resistance that is defined by a concentration of conductive material that is included in the conductive paint formulation and a thickness of the given paint layer, and lower concentrations of the conductive material included in the conductive paint formulation provide a higher resistance than higher concentrations of conductive material.

公开(公告)号：US20180315934A1

公开(公告)日：2018-11-01

申请号：US15959097

申请日：2018-04-20

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： MANABU NAKATA ,  YUKO KISHIMOTO ,  MASAYA HIRADE

IPC分类号： H01L51/00 ,  H01L31/0224

CPC分类号： H01L51/0078 ,  C07F7/2224 ,  H01L31/022408 ,  H01L31/022475 ,  H01L51/0077 ,  H01L51/0094 ,  H01L51/42

摘要： A composition contains a compound represented by the following formula: where M represents either of Si and Sn, R1 to R8 each independently represent an alkyl group containing three or less carbon atoms, and R9 to R14 each independently represent an alkyl group.

公开(公告)号：US20180273760A1

公开(公告)日：2018-09-27

申请号：US15544923

申请日：2016-01-22

申请人： Sony Corporation

发明人： Silvia ROSSELLI ,  David DANNER ,  Ameneh BAMEDI ZILAI ,  Gabriele NELLES ,  Tzenka MITEVA ,  Gerda FUHRMANN

IPC分类号： C09B57/00 ,  C09B23/01 ,  H01L27/30 ,  H01L27/28 ,  H01L51/42 ,  H01L51/44 ,  G02B5/20 ,  H01L51/00

CPC分类号： C09B57/007 ,  C09B23/0025 ,  C09B23/0066 ,  C09B23/0075 ,  G02B5/208 ,  H01L27/286 ,  H01L27/307 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0069 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0078 ,  H01L51/0094 ,  H01L51/4213 ,  H01L51/424 ,  H01L51/4253 ,  H01L51/442 ,  Y02E10/549

摘要： An active material for organic image sensors, where the active material is a squaraine-based active material or a thiophene-based active material. A photoelectric conversion layer containing the active material, which is a squaraine-based active material or a thiophene-based active material. An organic image sensor containing the photoelectric conversion layer containing the active material.

公开(公告)号：US20180240996A1

公开(公告)日：2018-08-23

申请号：US15752696

申请日：2016-08-18

申请人： Novaled GmbH

发明人： Markus Hummert ,  Thomas Rosenow

IPC分类号： H01L51/50

CPC分类号： H01L51/5088 ,  H01L51/005 ,  H01L51/0053 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0078 ,  H01L51/0079 ,  H01L51/0083 ,  H01L51/0091 ,  H01L51/5068 ,  H01L51/5084

摘要： The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia.

公开(公告)号：US20180240994A1

公开(公告)日：2018-08-23

申请号：US15752570

申请日：2016-08-24

申请人： OSRAM OLED GmbH

发明人： Dominik PENTLEHNER ,  Carola DIEZ ,  Ulrich NIEDERMEIER ,  Andreas RAUSCH

IPC分类号： H01L51/50 ,  H01L51/52

CPC分类号： H01L51/5044 ,  H01L51/0078 ,  H01L51/5278 ,  H01L2251/301 ,  H01L2251/558

摘要： The invention relates to an organic light-emitting component (100), comprising a functional layer stack (9) between two electrodes (1, 8), wherein the functional layer stack (9) has at least two organic light-emitting layers (2, 7) and at least one charge carrier generation zone (3), which is arranged between the two organic light-emitting layers (2, 7), wherein the charge carrier generation zone (3) comprises an electron-conducting organic layer (31) and a hole-conducting organic layer (32), between which an intermediate region (4) is arranged, wherein the intermediate region (4) comprises at least one organic intermediate layer (6) which has a first charge carrier transport mechanism and an inorganic intermediate layer (5) which has a second charge carrier transport mechanism, wherein the inorganic intermediate layer (5) is arranged between the organic intermediate layer (6) and the electron-conducting organic layer (31), and wherein the first charge carrier transport mechanism is at least partially different to the second charge carrier transport mechanism.

公开(公告)号：US20170365694A1

公开(公告)日：2017-12-21

申请号：US15673359

申请日：2017-08-09

申请人： Intel Corporation

发明人： Aleksandar ALEKSOV

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L29/24 ,  H01L29/267 ,  H01L51/05 ,  H01L29/739 ,  H01L29/06 ,  H01L51/00 ,  H01L29/786 ,  H01L29/78 ,  H01L21/8258

CPC分类号： H01L29/66977 ,  H01L21/8258 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/24 ,  H01L29/267 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/42392 ,  H01L29/7391 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7869 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0078 ,  H01L51/0533 ,  H01L51/0554 ,  H01L51/0562

摘要： Described is an apparatus forming complementary tunneling field effect transistors (TFETs) using oxide and/or organic semiconductor material. One type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type material selected from a group consisting of Group III-V, IV-IV, and IV of a periodic table; a doped second region, formed above the substrate, having transparent oxide n-type semiconductor material; and a gate stack coupled to the doped first and second regions. Another type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type organic semiconductor material; a doped second region, formed above the substrate, having n-type oxide semiconductor material; and a gate stack coupled to the doped source and drain regions. In another example, TFET is made using organic only semiconductor materials for active regions.

公开(公告)号：US20170352720A1

公开(公告)日：2017-12-07

申请号：US15612049

申请日：2017-06-02

申请人： The Trustees of Princeton University

发明人： Barry P. Rand ,  Michael A. Fusella ,  Siyu Yang

IPC分类号： H01L29/04 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L51/0034 ,  H01L27/1274 ,  H01L29/4908 ,  H01L51/0002 ,  H01L51/0026 ,  H01L51/0035 ,  H01L51/0046 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0078 ,  H01L51/5004 ,  H01L51/5012 ,  H01L51/504

摘要： Measurements on organic single crystals reveal remarkable optical and electrical characteristics compared to disordered films but practical device applications require uniform, pinhole-free films. Disclosed herein is a process to reliably convert as-deposited amorphous thin films to ones that are highly crystalline, with grains on the order of hundreds of microns. The disclosed method results in films that are pinhole-free and that possess grains that individually are single crystal domains.

公开(公告)号：US09837611B2

公开(公告)日：2017-12-05

申请号：US13624398

申请日：2012-09-21

申请人： Board of Regents, The University of Texas System

发明人： Luis Echegoyen ,  Michael D. Irwin ,  Danisha M. Rivera-Nazario

IPC分类号： H01L51/00 ,  H01L31/18 ,  H01L31/0224 ,  B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  H01L51/42 ,  B82Y20/00

CPC分类号： H01L51/0035 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L31/022425 ,  H01L31/18 ,  H01L51/004 ,  H01L51/0046 ,  H01L51/0047 ,  H01L51/0075 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/42 ,  H01L51/4206 ,  H01L2251/308 ,  Y02E10/549 ,  Y10S977/948

摘要： Design and use of photo-switching, fullerene-based dyads of the design x-D-y-A or D-y-A-x as interfacial layers (IFL) for organic photovoltaic (OPV) devices are described herein. The fullerene-based dyads and triads of the present invention contain electron-donating substituents such as porphyrins or phthalocyanines that exhibit charge separation states with long lifetimes upon irradiation, resulting in rejection of electrons reaching the electrode and concurrently promoting the conduction of holes. This phenomenon has a strong rectifying effect on the whole device, not just the interfaces, resulting in improved charge extraction from the interior of the photo-active layer. The invention further describes anchoring an IFL to the ITO surface as a monolayer, bilayer, or greater multilayers. One OPV design embodiment of the present invention embodiment involves the formation of covalent bonds via silane groups (—SiR3) as the anchor (x), to form siloxane bonds.

公开(公告)号：US09818978B2

公开(公告)日：2017-11-14

申请号：US15219637

申请日：2016-07-26

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Toru Takayama

IPC分类号： H01L51/50 ,  H01L27/28 ,  H01L51/52 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

CPC分类号： H01L51/5253 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0097 ,  H01L51/5016 ,  H01L51/5056 ,  H01L51/5088 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5259 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/301 ,  H01L2251/303 ,  H01L2251/5338 ,  H01L2251/558

摘要： An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT (1201) and an organic light emitting element (1202) are formed on the same substrate (1203) as structuring elements of a light emitting device (1200). A first insulating film (1205) which functions as a blocking layer is formed on the substrate (1203) side of the TFT (1201), and a second insulating film (1206) is formed on the opposite upper layer side as a protective film. In addition, a third insulating film (1207) which functions as a barrier film is formed on the lower layer side of the organic light emitting element (1202). The third insulating film (1207) is formed by an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, an aluminum nitride film, an aluminum oxide film, or an aluminum oxynitride film. A fourth insulating film (1208) and a partitioning layer (1209) formed on the upper layer side of the organic light emitting element (1202) are formed using similar inorganic insulating films.