公开(公告)号：US20160071776A1

公开(公告)日：2016-03-10

申请号：US14636984

申请日：2015-03-03

Applicant: Hisanori AIKAWA ,  Masayoshi IWAYAMA ,  Akiyuki MURAYAMA

Inventor： Hisanori AIKAWA ,  Masayoshi IWAYAMA ,  Akiyuki MURAYAMA

IPC: H01L21/66 ,  H01L27/22 ,  H01L43/12

CPC classification number: H01L22/20 ,  H01L22/14 ,  H01L27/224 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a manufacturing method of a magnetic memory device, includes obtaining first and second magnetic fields for each of magnetoresistive effect elements, defining a group of the elements, for the first and second magnetic fields of the elements in the group, a highest first magnetic field being lower than a lowest second magnetic field, and a difference between the highest first magnetic field and the lowest second magnetic field being greater than a predetermined difference, determining a maximum applied magnetic field higher than the highest first magnetic field and lower than the lowest second magnetic field, and obtaining magnetic characteristics for each of the elements in the group by applying a magnetic field decreasing from the maximum applied magnetic field after the magnetic field is increased up to the maximum applied magnetic field.

Abstract translation: 根据一个实施例，一种磁存储器件的制造方法包括为每个磁阻效应元件获得用于组中元件的第一和第二磁场的一组元件的第一和第二磁场， 最高的第一磁场低于最低的第二磁场，并且最高的第一磁场和最低的第二磁场之间的差大于预定的差，确定高于最高的第一磁场的最大施加的磁场和较低的第一磁场 并且通过在磁场增加到最大施加的磁场之后施加从最大施加的磁场减小的磁场来获得组中的每个元件的磁特性。

公开(公告)号：US20130099337A1

公开(公告)日：2013-04-25

申请号：US13604386

申请日：2012-09-05

Applicant: Masahiko Nakayama ,  Hisanori Aikawa ,  Masaru Toko ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Sumio Ikegawa

Inventor： Masahiko Nakayama ,  Hisanori Aikawa ,  Masaru Toko ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Sumio Ikegawa

IPC: H01L29/82

CPC classification number: H01L27/228 ,  H01L43/08

Abstract: According to one embodiment, a magnetic memory element includes a memory layer, a first nonmagnetic layer, a reference layer, a second nonmagnetic layer, and an adjustment layer which are stacked. The adjustment layer is configured to reduce a leakage magnetic field from the reference layer. The adjustment layer is formed by stacking an interface layer provided on the second nonmagnetic layer, and a magnetic layer having magnetic anisotropy perpendicular to a film surface. Saturation magnetization of the interface layer is larger than that of the magnetic layer.

Abstract translation: 根据一个实施例，磁存储元件包括堆叠的存储器层，第一非磁性层，参考层，第二非磁性层和调整层。 调整层被配置为减少来自参考层的泄漏磁场。 调整层通过层叠设置在第二非磁性层上的界面层和垂直于膜表面的具有磁各向异性的磁性层而形成。 界面层的饱和磁化强度大于磁性层的饱和磁化强度。

公开(公告)号：US20120241884A1

公开(公告)日：2012-09-27

申请号：US13432486

申请日：2012-03-28

Applicant: Hisanori AIKAWA ,  Tadashi Kai ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Naoharu Shimomura ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Jyunichi Ozeki ,  Hiroaki Yoda ,  Satoshi Yanagi

Inventor： Hisanori AIKAWA ,  Tadashi Kai ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Naoharu Shimomura ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Jyunichi Ozeki ,  Hiroaki Yoda ,  Satoshi Yanagi

IPC: H01L29/82

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228

Abstract: According to one embodiment, a magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm2.

Abstract translation: 根据一个实施例，磁存储器包括磁阻元件。 磁阻元件包括具有不变磁化方向的参考层，具有可变磁化方向的存储层和设置在参考层和存储层之间的间隔层。 存储层具有包括第一和第二磁性层的多层结构，第二磁性层设置在第一磁性层和间隔层之间，其磁各向异性能量低于第一磁性层的磁各向异性能，交换耦合常数Jex 第一磁性层和第二磁性层之间的距离不大于5erg / cm2。

公开(公告)号：US20110254114A1

公开(公告)日：2011-10-20

申请号：US13172516

申请日：2011-06-29

Applicant: Makoto Nagamine ,  Keiji Hosotani ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Sumio Ikegawa

Inventor： Makoto Nagamine ,  Keiji Hosotani ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Sumio Ikegawa

IPC: H01L29/82

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11C11/161 ,  G11C29/50 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetoresistive effect element includes a first ferromagnetic layer formed above a substrate, a second ferromagnetic layer formed above the first ferromagnetic layer, an insulating layer interposed between the first ferromagnetic layer and the second ferromagnetic layer and formed of a metal oxide, and a first nonmagnetic metal layer interposed between the insulating layer and the second ferromagnetic layer and in contact with a surface of the insulating layer on the side of the second ferromagnetic layer, the first nonmagnetic metal layer containing the same metal element as the metal oxide.

Abstract translation: 磁阻效应元件包括形成在衬底上的第一铁磁层，形成在第一铁磁层之上的第二铁磁层，介于第一铁磁层和第二铁磁层之间并由金属氧化物形成的绝缘层，以及第一非磁性层 金属层介于绝缘层和第二铁磁层之间并与第二铁磁层一侧的绝缘层的表面接触，第一非磁性金属层含有与金属氧化物相同的金属元素。

公开(公告)号：US20110228596A1

公开(公告)日：2011-09-22

申请号：US12885833

申请日：2010-09-20

Applicant: Tomoaki Inokuchi ,  Takao Marukame ,  Mizue Ishikawa ,  Hideyuki Sugiyama ,  Hisanori Aikawa ,  Masahiko Nakayama ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito

Inventor： Tomoaki Inokuchi ,  Takao Marukame ,  Mizue Ishikawa ,  Hideyuki Sugiyama ,  Hisanori Aikawa ,  Masahiko Nakayama ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito

IPC: G11C11/15 ,  H01L29/82

CPC classification number: H01L29/66984 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1677 ,  G11C11/1697 ,  H01L27/224 ,  H01L43/08

Abstract: Certain embodiments provide a spin memory including a memory cell including a ferromagnetic stacked film that has a stacked structure in which a first ferromagnetic layer, a first nonmagnetic layer, a second ferromagnetic layer, a second nonmagnetic layer, and a third ferromagnetic layer are stacked in this order or reverse order, the third ferromagnetic layer and the second ferromagnetic layer being antiferromagnetically exchange-coupled via the second nonmagnetic layer. The ferromagnetic stacked film includes a current path in which a first and second write currents flow from the first ferromagnetic layer to the third ferromagnetic layer to write a first and second magnetization states into the first ferromagnetic layer respectively, and the second write current is higher than the first write current.

Abstract translation: 某些实施例提供一种自旋存储器，其包括一个存储单元，该存储单元包括一个具有层叠结构的铁磁层叠膜，其中第一铁磁层，第一非磁性层，第二铁磁层，第二非磁性层和第三铁磁层堆叠在其中 该顺序或反向顺序，第三铁磁层和第二铁磁层经由第二非磁性层反铁磁交换耦合。 铁磁层叠膜包括电流路径，其中第一和第二写入电流从第一铁磁层流向第三铁磁层，以将第一和第二磁化状态分别写入第一铁磁层，并且第二写入电流高于 第一次写入电流。

公开(公告)号：US07894246B2

公开(公告)日：2011-02-22

申请号：US12014522

申请日：2008-01-15

Applicant: Tomomasa Ueda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

Inventor： Tomomasa Ueda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

IPC: G11C11/00

CPC classification number: G11C11/15 ,  H01L27/228 ,  H01L43/08

Abstract: A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.

Abstract translation: 磁阻元件包括：无磁化层，其具有第一平面和位于与第一平面相反的一侧的第二平面，并且具有可变的磁化方向; 磁化固定层，设置在所述磁化自由层的所述第一平面侧上，并且具有钉扎磁化方向; 设置在所述磁化自由层和所述磁化固定层之间的第一隧道势垒层; 设置在无磁化层的第二平面上的第二隧道势垒层; 以及设置在与磁化自由层相反的第二隧道势垒层的相对侧上的平面上的非磁性层。 磁化自由层的磁化方向通过在磁化被钉扎层和非磁性层之间施加电流而变化，并且第一隧道势垒层和第二隧道势垒层之间的电阻比在1:0.25至 1：4。

公开(公告)号：US20100315864A1

公开(公告)日：2010-12-16

申请号：US12851275

申请日：2010-08-05

Applicant: Tomomasa UEDA ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

Inventor： Tomomasa UEDA ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

IPC: G11C11/00 ,  H01L21/02 ,  H01L29/82

CPC classification number: G11C11/15 ,  H01L27/228 ,  H01L43/08

Abstract: A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.

Abstract translation: 磁阻元件包括：无磁化层，其具有第一平面和位于与第一平面相反的一侧的第二平面，并且具有可变的磁化方向; 磁化固定层，设置在所述磁化自由层的所述第一平面侧上，并且具有钉扎磁化方向; 设置在所述磁化自由层和所述磁化固定层之间的第一隧道势垒层; 设置在无磁化层的第二平面上的第二隧道势垒层; 以及设置在与磁化自由层相反的第二隧道势垒层的相对侧上的平面上的非磁性层。 磁化自由层的磁化方向通过在磁化被钉扎层和非磁性层之间施加电流而变化，并且第一隧道势垒层和第二隧道势垒层之间的电阻比在1:0.25至 1：4。

公开(公告)号：US20100080050A1

公开(公告)日：2010-04-01

申请号：US12556883

申请日：2009-09-10

Applicant: Jyunichi OZEKI ,  Naoharu SHIMOMURA ,  Sumio IKEGAWA ,  Tadashi KAI ,  Masahiko NAKAYAMA ,  Hisanori AIKAWA ,  Tatsuya KISHI ,  Hiroaki YODA ,  Eiji KITAGAWA ,  Masatoshi YOSHIKAWA

Inventor： Jyunichi OZEKI ,  Naoharu SHIMOMURA ,  Sumio IKEGAWA ,  Tadashi KAI ,  Masahiko NAKAYAMA ,  Hisanori AIKAWA ,  Tatsuya KISHI ,  Hiroaki YODA ,  Eiji KITAGAWA ,  Masatoshi YOSHIKAWA

IPC: G11C11/00 ,  H01L29/82 ,  G11C11/14

CPC classification number: H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3277 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

Abstract: A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.

Abstract translation: 磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜 在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

公开(公告)号：US07564109B2

公开(公告)日：2009-07-21

申请号：US10917300

申请日：2004-08-13

Applicant: Takeshi Kajiyama ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Masatoshi Yoshikawa

Inventor： Takeshi Kajiyama ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Masatoshi Yoshikawa

IPC: G11C11/00 ,  G11C11/14 ,  H01L21/8246

CPC classification number: H01L27/228 ,  B82Y10/00

Abstract: A magnetic memory device includes a first write wiring line including a wiring layer formed in a trench in an insulation layer, a barrier metal layer buried in the trench over the wiring layer. And the device includes a magneto-resistance effect element provided on the first write wiring line.

Abstract translation: 磁存储器件包括：第一写入布线，其包括形成在绝缘层中的沟槽中的布线层;掩埋在布线层上的沟槽中的阻挡金属层。 并且该器件包括设置在第一写入布线上的磁阻效应元件。

公开(公告)号：US20080253039A1

公开(公告)日：2008-10-16

申请号：US12100097

申请日：2008-04-09

Applicant: Makoto NAGAMINE ,  Keiji HOSOTANI ,  Hisanori AIKAWA ,  Tomomasa UEDA ,  Sumio IKEGAWA

Inventor： Makoto NAGAMINE ,  Keiji HOSOTANI ,  Hisanori AIKAWA ,  Tomomasa UEDA ,  Sumio IKEGAWA

IPC: G11B5/33

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11C11/161 ,  G11C29/50 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetoresistive effect element includes a first ferromagnetic layer formed above a substrate, a second ferromagnetic layer formed above the first ferromagnetic layer, an insulating layer interposed between the first ferromagnetic layer and the second ferromagnetic layer and formed of a metal oxide, and a first nonmagnetic metal layer interposed between the insulating layer and the second ferromagnetic layer and in contact with a surface of the insulating layer on the side of the second ferromagnetic layer, the first nonmagnetic metal layer containing the same metal element as the metal oxide.

Abstract translation: 磁阻效应元件包括形成在衬底上的第一铁磁层，形成在第一铁磁层之上的第二铁磁层，介于第一铁磁层和第二铁磁层之间并由金属氧化物形成的绝缘层，以及第一非磁性层 金属层介于绝缘层和第二铁磁层之间并与第二铁磁层一侧的绝缘层的表面接触，第一非磁性金属层含有与金属氧化物相同的金属元素。