公开(公告)号：US09406871B2

公开(公告)日：2016-08-02

申请号：US14807267

申请日：2015-07-23

Applicant: Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

Inventor： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

IPC: H01L43/00 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

公开(公告)号：US09368717B2

公开(公告)日：2016-06-14

申请号：US14200742

申请日：2014-03-07

Applicant: Masaru Toko ,  Masahiko Nakayama ,  Kuniaki Sugiura ,  Yutaka Hashimoto ,  Tadashi Kai ,  Akiyuki Murayama ,  Tatsuya Kishi

Inventor： Masaru Toko ,  Masahiko Nakayama ,  Kuniaki Sugiura ,  Yutaka Hashimoto ,  Tadashi Kai ,  Akiyuki Murayama ,  Tatsuya Kishi

IPC: H01L27/02 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/08

Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer. The reference layer includes a first region, and a second region provided outside the first region to surround the same. The second region contains an element contained in the first region and another element being different from the element. The magnetoresistive element further includes a storage layer, and a tunnel barrier layer provided between the reference layer and the storage layer. The storage layer is free from the another element.

Abstract translation: 根据一个实施例，公开了一种磁阻元件。 磁阻元件包括参考层。 参考层包括第一区域和设置在第一区域外部以包围该第一区域的第二区域。 第二区域包含包含在第一区域中的元素，而另一元素与元素不同。 磁阻元件还包括存储层，以及设置在参考层和存储层之间的隧道势垒层。 存储层没有另一个元素。

公开(公告)号：US20150069558A1

公开(公告)日：2015-03-12

申请号：US14203249

申请日：2014-03-10

Applicant: Masahiko NAKAYAMA ,  Tadashi KAI ,  Masaru TOKO ,  Hiroaki YODA ,  Hyung Suk LEE ,  Jae Geun OH ,  Choon Kun RYU ,  Min Suk LEE

Inventor： Masahiko NAKAYAMA ,  Tadashi KAI ,  Masaru TOKO ,  Hiroaki YODA ,  Hyung Suk LEE ,  Jae Geun OH ,  Choon Kun RYU ,  Min Suk LEE

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/5607 ,  H01L27/222 ,  H01L27/228 ,  H01L27/2463 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L45/04

Abstract: According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.

Abstract translation: 根据一个实施例，公开了一种磁存储器。 该存储器包括一个包含第一金属材料的导电层，在该导电层上方的层叠体，并且包括一个第一磁化膜，该第一磁化膜含有第二金属材料，第二磁化膜和第一磁化膜与第二磁化膜之间的隧道势垒层 磁化膜和层叠体的侧面上的绝缘层，并且含有第一金属材料的氧化物。 第一磁化膜和/或第二磁化膜包括位于中心部分的第一区域和位于边缘部分中并且包含As，P，Ge，Ga，Sb，In，N，Ar，He的第二区域， F，Cl，Br，I，Si，B，C，O，Zr，Tb，S，Se或Ti。

公开(公告)号：US08884389B2

公开(公告)日：2014-11-11

申请号：US13618780

申请日：2012-09-14

Applicant: Masaru Toko ,  Masahiko Nakayama ,  Akihiro Nitayama ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Hiroaki Yoda

Inventor： Masaru Toko ,  Masahiko Nakayama ,  Akihiro Nitayama ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Hiroaki Yoda

IPC: H01L27/22 ,  H01L21/8239 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable and perpendicular to the film surface. The first magnetic layer includes an interface layer formed on an upper side in contact with a lower portion of the tunnel barrier layer, and a main body layer formed on a lower side and serving as an origin of perpendicular magnetic anisotropy. The interface layer includes a first area provided on an inner side and having magnetization, and a second area provided on an outer side to surround the first area and having magnetization smaller than the magnetization of the first area or no magnetization.

Abstract translation: 根据一个实施例，磁阻元件包括具有不变且垂直于膜表面的磁化方向的第一磁性层，形成在第一磁性层上的隧道势垒层，以及形成在隧道势垒层上的第二磁性层，并且具有 磁化方向可变并垂直于膜表面。 第一磁性层包括形成在与隧道势垒层的下部相接触的上侧的界面层，以及形成在下侧并用作垂直磁各向异性的原点的主体层。 界面层包括设置在内侧并具有磁化的第一区域和设置在外侧以围绕第一区域并且具有小于第一区域的磁化或不具有磁化的磁化的第二区域。

公开(公告)号：US08634238B2

公开(公告)日：2014-01-21

申请号：US13604386

申请日：2012-09-05

Applicant: Masahiko Nakayama ,  Hisanori Aikawa ,  Masaru Toko ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Sumio Ikegawa

Inventor： Masahiko Nakayama ,  Hisanori Aikawa ,  Masaru Toko ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Sumio Ikegawa

IPC: G11C11/15

CPC classification number: H01L27/228 ,  H01L43/08

Abstract: According to one embodiment, a magnetic memory element includes a memory layer, a first nonmagnetic layer, a reference layer, a second nonmagnetic layer, and an adjustment layer which are stacked. The adjustment layer is configured to reduce a leakage magnetic field from the reference layer. The adjustment layer is formed by stacking an interface layer provided on the second nonmagnetic layer, and a magnetic layer having magnetic anisotropy perpendicular to a film surface. Saturation magnetization of the interface layer is larger than that of the magnetic layer.

Abstract translation: 根据一个实施例，磁存储元件包括堆叠的存储器层，第一非磁性层，参考层，第二非磁性层和调整层。 调整层被配置为减少来自参考层的泄漏磁场。 调整层通过层叠设置在第二非磁性层上的界面层和垂直于膜表面的具有磁各向异性的磁性层而形成。 界面层的饱和磁化强度大于磁性层的饱和磁化强度。

公开(公告)号：US09385304B2

公开(公告)日：2016-07-05

申请号：US14203249

申请日：2014-03-10

Applicant: Masahiko Nakayama ,  Tadashi Kai ,  Masaru Toko ,  Hiroaki Yoda ,  Hyung Suk Lee ,  Jae Geun Oh ,  Choon Kun Ryu ,  Min Suk Lee

Inventor： Masahiko Nakayama ,  Tadashi Kai ,  Masaru Toko ,  Hiroaki Yoda ,  Hyung Suk Lee ,  Jae Geun Oh ,  Choon Kun Ryu ,  Min Suk Lee

IPC: H01L27/00 ,  H01L43/02 ,  H01L43/12 ,  H01L45/00 ,  G11C11/56 ,  G11C11/15 ,  G11C11/16 ,  H01L27/22 ,  H01L27/24 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/5607 ,  H01L27/222 ,  H01L27/228 ,  H01L27/2463 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L45/04

Abstract: According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.

Abstract translation: 根据一个实施例，公开了一种磁存储器。 该存储器包括一个包含第一金属材料的导电层，在该导电层上方的层叠体，并且包括一个第一磁化膜，该第一磁化膜含有第二金属材料，第二磁化膜和第一磁化膜与第二磁化膜之间的隧道势垒层 磁化膜和层叠体的侧面上的绝缘层，并且含有第一金属材料的氧化物。 第一磁化膜和/或第二磁化膜包括位于中心部分的第一区域和位于边缘部分中并且包含As，P，Ge，Ga，Sb，In，N，Ar，He的第二区域， F，Cl，Br，I，Si，B，C，O，Zr，Tb，S，Se或Ti。

公开(公告)号：US09178134B2

公开(公告)日：2015-11-03

申请号：US14203198

申请日：2014-03-10

Applicant: Masahiko Nakayama ,  Tadashi Kai ,  Masaru Toko ,  Toshihiko Nagase ,  Hiroaki Yoda

Inventor： Masahiko Nakayama ,  Tadashi Kai ,  Masaru Toko ,  Toshihiko Nagase ,  Hiroaki Yoda

IPC: H01L29/00 ,  H01L43/10 ,  H01L43/12 ,  H01L45/00 ,  H01L29/82 ,  H01L27/24 ,  H01L27/22

CPC classification number: H01L43/10 ,  H01L27/222 ,  H01L27/228 ,  H01L27/2463 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12 ,  H01L45/06

Abstract: According to one embodiment, a magnetoresistive element is disclosed. The element includes a first magnetic film, a second magnetic film, and a first nonmagnetic layer formed between the first magnetic film and the second magnetic film. The second magnetic film includes a first magnetic layer formed on a side of the first nonmagnetic layer, a second magnetic layer formed on a side opposite to the first nonmagnetic layer, and a second nonmagnetic layer formed between the first magnetic layer and the second magnetic layer and containing TiN.

Abstract translation: 根据一个实施例，公开了一种磁阻元件。 元件包括第一磁性膜，第二磁性膜和形成在第一磁性膜和第二磁性膜之间的第一非磁性层。 第二磁性膜包括形成在第一非磁性层一侧的第一磁性层，形成在与第一非磁性层相反的一侧的第二磁性层和形成在第一磁性层和第二磁性层之间的第二非磁性层 并含有TiN。

公开(公告)号：US09123879B2

公开(公告)日：2015-09-01

申请号：US14202802

申请日：2014-03-10

Applicant: Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

Inventor： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

IPC: H01L27/00 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

Abstract translation: 根据一个实施例，公开了一种磁阻元件。 磁阻元件包括参考层，隧道势垒层，存储层。 存储层包括第一区域和设置在第一区域外部以围绕第一区域的第二区域，第二区域包括包含在第一区域中的元素，而另一个元素不同于元件。 磁阻元件进一步包括盖层，该盖层包括第三区域和设置在第三区域外部以包围第三区域的第四区域，第四区域包括包括在第三区域中的元件和另一元件。

公开(公告)号：US20150069557A1

公开(公告)日：2015-03-12

申请号：US14202802

申请日：2014-03-10

Applicant: Masahiko NAKAYAMA ,  Masatoshi YOSHIKAWA ,  Tadashi KAI ,  Yutaka HASHIMOTO ,  Masaru TOKO ,  Hiroaki YODA ,  Jae Geun OH ,  Keum Bum LEE ,  Choon Kun RYU ,  Hyung Suk LEE ,  Sook Joo KIM

Inventor： Masahiko NAKAYAMA ,  Masatoshi YOSHIKAWA ,  Tadashi KAI ,  Yutaka HASHIMOTO ,  Masaru TOKO ,  Hiroaki YODA ,  Jae Geun OH ,  Keum Bum LEE ,  Choon Kun RYU ,  Hyung Suk LEE ,  Sook Joo KIM

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

Abstract translation: 根据一个实施例，公开了一种磁阻元件。 磁阻元件包括参考层，隧道势垒层，存储层。 存储层包括第一区域和设置在第一区域外部以围绕第一区域的第二区域，第二区域包括包含在第一区域中的元素，而另一个元素不同于元件。 磁阻元件进一步包括盖层，该盖层包括第三区域和设置在第三区域外部以包围第三区域的第四区域，第四区域包括包括在第三区域中的元件和另一元件。

公开(公告)号：US20150069554A1

公开(公告)日：2015-03-12

申请号：US14201263

申请日：2014-03-07

Applicant: Masahiko NAKAYAMA ,  Yasuyuki SONODA ,  Hiroaki YODA ,  Makoto NAGAMINE ,  Masatoshi YOSHIKAWA ,  Masaru TOKO ,  Tadashi KAI ,  Daisuke WATANABE ,  Youngmin EEH ,  Koji UEDA ,  Kazuya SAWADA ,  Toshihiko NAGASE

Inventor： Masahiko NAKAYAMA ,  Yasuyuki SONODA ,  Hiroaki YODA ,  Makoto NAGAMINE ,  Masatoshi YOSHIKAWA ,  Masaru TOKO ,  Tadashi KAI ,  Daisuke WATANABE ,  Youngmin EEH ,  Koji UEDA ,  Kazuya SAWADA ,  Toshihiko NAGASE

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metallic material, a stacked body formed above the conductive layer and including a first magnetic layer containing a second metallic material, a second magnetic layer, and a tunnel barrier layer formed between the first magnetic layer and the second magnetic layer, and an insulating layer formed on a side face of the stacked body and containing an oxide of the first metallic material. A standard electrode potential of the first metallic material is lower than the standard electrode potential of the second metallic material.

Abstract translation: 根据一个实施例，公开了一种磁存储器。 存储器包括含有第一金属材料的导电层，形成在导电层之上的层叠体，并且包括形成在第一磁性层和第二磁性层之间的包含第二金属材料的第一磁性层，第二磁性层和隧道势垒层 第二磁性层和形成在层叠体的侧面上并且包含第一金属材料的氧化物的绝缘层。 第一金属材料的标准电极电位低于第二金属材料的标准电极电位。