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    Rare earth-doped materials with enhanced thermoelectric figure of merit
    1.
    发明授权
    Rare earth-doped materials with enhanced thermoelectric figure of merit 有权
    稀土掺杂材料具有增强的热电性能

    公开(公告)号：US09437796B2

    公开(公告)日：2016-09-06

    申请号：US13725156

    申请日：2012-12-21

    申请人： RESEARCH TRIANGLE INSTITUTE

    发明人： Rama Venkatasubramanian ,  Bruce Allen Cook ,  Evgenii M. Levin ,  Joel Lee Harringa

    IPC分类号： H01L35/14 ,  H01L35/16 ,  C22C1/02 ,  C22C28/00 ,  H01F1/40

    CPC分类号： H01L35/16 ,  C22C1/02 ,  C22C28/00 ,  H01F1/401

    摘要： A thermoelectric material and a thermoelectric converter using this material. The thermoelectric material has a first component including a semiconductor material and a second component including a rare earth material included in the first component to thereby increase a figure of merit of a composite of the semiconductor material and the rare earth material relative to a figure of merit of the semiconductor material. The thermoelectric converter has a p-type thermoelectric material and a n-type thermoelectric material. At least one of the p-type thermoelectric material and the n-type thermoelectric material includes a rare earth material in at least one of the p-type thermoelectric material or the n-type thermoelectric material.

    摘要翻译： 使用这种材料的热电材料和热电转换器。 热电材料具有包括半导体材料的第一部件和包括在第一部件中的稀土材料的第二部件，从而相对于品质因数增加半导体材料和稀土材料的复合材料的品质因数 的半导体材料。 热电转换器具有p型热电材料和n型热电材料。 p型热电材料和n型热电材料中的至少一种在p型热电材料或n型热电材料中的至少一种中包括稀土材料。

    COMPOSITE FERRITE COMPOSITION AND ELECTRONIC DEVICE
    3.
    发明申请
    COMPOSITE FERRITE COMPOSITION AND ELECTRONIC DEVICE 有权
    复合粉末组合物和电子器件

    公开(公告)号：US20140333405A1

    公开(公告)日：2014-11-13

    申请号：US14266214

    申请日：2014-04-30

    申请人： TDK CORPORATION

    发明人： Hiroki CHOTO ,  Takashi SUZUKI ,  Shinichi KONDO ,  Yuya OSHIMA ,  Masahiro ENDO ,  Masaki TAKAHASHI

    IPC分类号： H01F1/40

    CPC分类号： H01F1/401 ,  H01F1/37 ,  H01F17/0013

    摘要： A composite ferrite composition comprises a magnetic material and a non-magnetic material. A mixing ratio of said magnetic material and said non-magnetic material is 20 wt %:80 wt % to 80 wt %:20 wt %. Ni—Cu—Zn based ferrite is used as the magnetic material. Oxides of Zn, Cu, and Si are at least included in a main component of said non-magnetic material. Borosilicate glass is included in a subcomponent of said non-magnetic material.

    摘要翻译： 复合铁氧体组合物包括磁性材料和非磁性材料。 所述磁性材料和所述非磁性材料的混合比为20重量％：80重量％至80重量％：20重量％。 使用Ni-Cu-Zn系铁氧体作为磁性材料。 Zn，Cu和Si的氧化物至少包括在所述非磁性材料的主要成分中。 硼硅酸盐玻璃被包括在所述非磁性材料的副成分中。

    Spin transistor and method of operating the same
    5.
    发明授权
    Spin transistor and method of operating the same 有权
    旋转晶体管及其操作方法

    公开(公告)号：US08269293B2

    公开(公告)日：2012-09-18

    申请号：US12742221

    申请日：2008-11-04

    申请人： Ki-Ha Hong ,  Sung-Hoon Lee ,  Jong-Seob Kim ,  Jai-Kwang Shin

    发明人： Ki-Ha Hong ,  Sung-Hoon Lee ,  Jong-Seob Kim ,  Jai-Kwang Shin

    IPC分类号： H01L29/82

    CPC分类号： H01L29/66984 ,  B82Y25/00 ,  H01F1/401 ,  H01F1/404 ,  H01F10/1933 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3295 ,  H01L29/82

    摘要： Disclosed are a spin transistor and a method of operating the spin transistor. The disclosed spin transistor includes a channel formed of a magnetic material selectively passing a spin-polarized electron having a specific direction, a source formed of a magnetic material, a drain, and a gate electrode. When a predetermined voltage is applied to the gate electrode, the channel selectively passes a spin-polarized electron having a specific direction and thus, the spin transistor is selectively turned on.

    摘要翻译： 公开了自旋晶体管和操作自旋晶体管的方法。 所公开的自旋晶体管包括由选择性地通过具有特定方向的自旋极化电子的磁性材料形成的沟道，由磁性材料形成的源极，漏极和栅电极。 当预定电压施加到栅电极时，沟道选择性地通过具有特定方向的自旋极化电子，因此自旋晶体管选择性地导通。