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公开(公告)号：US11462670B2
公开(公告)日：2022-10-04
申请号：US16328300
申请日：2017-08-29
摘要： A thermoelectric conversion material includes: a base material that is a semiconductor; and an additive element that differs from an element constituting the base material. An additional band formed of the additive element is present within a forbidden band of the base material. A density of states of the additional band has a ratio of greater than or equal to 0.1 relative to a maximum value of a density of states of a valence band adjacent to the forbidden band of the base material.
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公开(公告)号：US11367824B2
公开(公告)日：2022-06-21
申请号：US16082476
申请日：2017-03-09
发明人： Teppei Yamada , Hongyao Zhou , Nobuo Kimizuka
IPC分类号： H01L35/28 , H01L35/24 , G01K7/02 , H01M14/00 , G01J5/12 , H01L35/04 , H01L35/14 , H01L35/34 , H01M6/36
摘要： The present invention provides a thermoelectric conversion material having a considerably increased Seebeck coefficient, and a thermoelectric conversion device, a thermo-electrochemical cell and a thermoelectric sensor which include the material. The thermoelectric conversion material of the present invention includes a redox pair and a capture compound which captures only one of the redox pair selectively at low temperature and releases at high temperature.
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公开(公告)号：US11217740B2
公开(公告)日：2022-01-04
申请号：US16667583
申请日：2019-10-29
发明人： Woo Ju Lee , Byung Wook Kim , Hoo Dam Lee , Jin Woo Kwak
摘要： A thermoelectric module includes: unit thermoelectric materials including N-type thermoelectric materials and P-type thermoelectric materials and arranged on one surface of a first substrate; first electrodes each electrically connected to one end of a respective one of the N-type thermoelectric materials or to one end of a respective one of the P-type thermoelectric materials; second electrodes each disposed to be spaced apart from the other end of the respective one of the N-type thermoelectric materials and the other end of the respective one of the P-type thermoelectric materials by a predetermined gap; and a second substrate supporting the second electrodes, in which each of the second electrodes is electrically connected to the second end of the respective one of the N-type thermoelectric materials and the second end of the respective one of the P-type thermoelectric materials when a pressing force is applied to the second substrate.
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公开(公告)号：US11217739B2
公开(公告)日：2022-01-04
申请号：US16619447
申请日：2018-06-07
发明人： Ryo Teranishi , Shinji Munetoh , Osamu Furukimi
摘要： A semiconductor substrate contains a clathrate compound of the following General Formula (I). The semiconductor substrate includes a variable-composition layer which includes a pn junction and where composition of the clathrate compound varies along a thickness direction. A rate of change in y in the thickness direction of at least a portion of the variable-composition layer is 1×10−4/μm or more. AxByC46-y (I) In General Formula (I), A represents at least one element selected from the group consisting of Ba, Na, Sr, and K, B represents at least one element selected from the group consisting of Au, Ag, Cu, Ni, and Al, and C represents at least one element selected from the group consisting of Si, Ge, and Sn, x is 7 to 9, and y is 3.5 to 6 or 11 to 17.
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公开(公告)号：US11114601B2
公开(公告)日：2021-09-07
申请号：US16329022
申请日：2017-08-28
发明人： Barbara Albert , Dennis Henge
摘要： Novel compounds with thermoelectric properties are presented. The novel compounds belong to the group of phosphides. They are characterized by excellent thermoelectric properties, in particularly in the temperature range of 400° C. to 700° C. Also a production method for the production of the compounds is presented, with which the thermoelectric substances can be prepared with high yield and quality.
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公开(公告)号：US20200370938A1
公开(公告)日：2020-11-26
申请号：US16992411
申请日：2020-08-13
发明人： Robert Higashi , Scott Edward Beck , Yong-Fa Wang , Ian Bentley , Bill Hoover
摘要： Example systems, apparatuses, and methods are disclosed sensing a flow of fluid using a thermopile-based flow sensing device. An example apparatus includes a flow sensing device comprising a heating structure having a centerline. The flow sensing device may further comprise a thermopile. At least a portion of the thermopile may be disposed over the heating structure. The thermopile may comprise a first thermocouple having a first thermocouple junction disposed upstream of the centerline of the heating structure. The thermopile may further comprise a second thermocouple having a second thermocouple junction disposed downstream of the centerline of the heating structure.
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公开(公告)号：US20200303612A1
公开(公告)日：2020-09-24
申请号：US16084057
申请日：2017-03-17
发明人： Yoshinobu Nakada , Koya Arai , Masahito Komasaki
摘要： A magnesium-based thermoelectric conversion material includes a first layer formed of Mg2Si and a second layer formed of Mg2SixSn1-x (here, x is equal to or greater than 0 and less than 1), in which the first layer and the second layer are directly joined to each other, and within a junction surface with the first layer and in the vicinity of the junction surface, the second layer has a tin concentration transition region in which a tin concentration increases as a distance from the junction surface increases. The junction layer is regarded as a site in which a tin concentration is found to be equal to or lower than a detection limit by the measurement performed using EDX.
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公开(公告)号：US10707397B2
公开(公告)日：2020-07-07
申请号：US14657247
申请日：2015-03-13
发明人： Zhifeng Ren , Machhindra Koirala
IPC分类号： H01L35/20 , C22C1/04 , C22C28/00 , H01L35/34 , H01L35/14 , C22C9/00 , B22F1/00 , B22F3/02 , C22C30/02
摘要： Materials and systems and methods of manufacture thereof that function as thermoelectric materials both in and near a cryogenic temperature range. In particular, the synthesis of heavy fermion materials that exhibit higher ZTs than previously achieved at cryogenic and near-cryogenic temperatures.
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公开(公告)号：US10686112B2
公开(公告)日：2020-06-16
申请号：US16384392
申请日：2019-04-15
发明人： Hiroki Sato , Hiromasa Tamaki , Tsutomu Kanno
摘要： The present invention provides a thermoelectric conversion material represented by the following chemical formula (I): Ba8+aCu6−bGe40+6 (I) wherein the values of a is not less than 0.1 and not more than 0.47; the values of b is not less than 0 and not more than 0.43; the thermoelectric conversion material has a clathrate crystal structure; and the thermoelectric conversion material is of p-type. The present invention provides a p-type Ba—Cu—Ge clathrate thermoelectric conversion material having high thermoelectric conversion performance index.
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公开(公告)号：US10454012B2
公开(公告)日：2019-10-22
申请号：US14402828
申请日：2012-05-22
摘要： The present invention aims at providing a thermoelectric conversion module with low toxicity, which exhibits conversion efficiency equivalent to that of BiTe.The thermoelectric conversion module of the present invention employs a full Heusler alloy as the material for forming the P-type thermoelectric conversion unit and the N-type thermoelectric conversion unit. The material for forming the N-type thermoelectric conversion unit contains at least any one of Fe, Ti, and Si and Sn.
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