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公开(公告)号：US12087825B2
公开(公告)日：2024-09-10
申请号：US18243850
申请日：2023-09-08
发明人： Yasuharu Hosaka , Toshimitsu Obonai , Yukinori Shima , Masami Jintyou , Daisuke Kurosaki , Takashi Hamochi , Junichi Koezuka , Kenichi Okazaki , Shunpei Yamazaki
IPC分类号： H01L29/24 , C03C17/245 , C04B35/01 , C04B35/453 , C04B35/622 , C23C14/08 , C23C14/58 , H01L27/12 , H01L29/778 , H01L29/786
CPC分类号： H01L29/24 , C03C17/245 , C04B35/01 , C04B35/453 , C04B35/62218 , C23C14/08 , C23C14/5853 , H01L27/1225 , H01L29/7782 , H01L29/7786 , H01L29/78648 , H01L29/7869 , H01L29/78696 , C03C2217/23 , C03C2218/151 , C04B2235/3217 , C04B2235/3225 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/787 , C04B2235/96
摘要： A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
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公开(公告)号：US11742118B2
公开(公告)日：2023-08-29
申请号：US17230298
申请日：2021-04-14
发明人： Michael David Hill
CPC分类号： H01F1/01 , C04B35/26 , C04B35/2633 , H01F1/10 , H01F1/348 , H01F1/36 , H01Q1/36 , H01Q1/364 , H01Q7/06 , C04B2235/3201 , C04B2235/3213 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3232 , C04B2235/3241 , C04B2235/3244 , C04B2235/3262 , C04B2235/3275 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/3418 , C04B2235/767 , C04B2235/80
摘要： Disclosed herein are embodiments of an enhanced resonant frequency hexagonal ferrite material, such as Y-phase hexagonal ferrite material, and methods of manufacturing. In some embodiments, sodium or potassium can be added into the crystal structure of the hexagonal ferrite material in order to achieve improved resonant frequencies in the range of 500 MHz to 1 GHz useful for radiofrequency applications.
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公开(公告)号：US11735403B2
公开(公告)日：2023-08-22
申请号：US17384867
申请日：2021-07-26
IPC分类号： H01J37/34 , H01L29/786 , H01L29/66 , H01L21/02 , H01L27/12 , C23C14/34 , C23C14/08 , B28B11/24 , B28B1/00 , C04B35/01 , C04B35/453 , C04B35/58 , H01L29/423 , H01L29/24 , G02F1/1368 , G02F1/1335 , G02F1/1333
CPC分类号： H01J37/3429 , B28B1/008 , B28B11/24 , C04B35/01 , C04B35/453 , C04B35/58 , C23C14/086 , C23C14/3414 , H01J37/3414 , H01J37/3417 , H01J37/3426 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/127 , H01L27/1225 , H01L29/42384 , H01L29/66969 , H01L29/7869 , H01L29/78648 , H01L29/78696 , C04B2235/3205 , C04B2235/3206 , C04B2235/3217 , C04B2235/3232 , C04B2235/3239 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/3409 , C04B2235/3418 , C04B2235/3852 , C04B2235/72 , C04B2235/781 , C04B2235/785 , C04B2235/786 , C04B2235/80 , G02F1/1368 , G02F1/133345 , G02F1/133514 , G02F1/133553 , G02F2203/02 , H01L29/24
摘要： A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.
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公开(公告)号：US20180354858A1
公开(公告)日：2018-12-13
申请号：US15973907
申请日：2018-05-08
发明人： Michael David Hill
IPC分类号： C04B35/44 , C04B35/488 , F01D5/28 , C23C4/11 , C23C30/00
CPC分类号： C04B35/44 , C04B35/488 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3241 , C04B2235/3246 , C04B2235/3248 , C04B2235/3251 , C04B2235/3262 , C04B2235/3272 , C04B2235/3286 , C04B2235/3294 , C04B2235/3298 , C04B2235/762 , C04B2235/765 , C04B2235/768 , C04B2235/80 , C04B2235/9607 , C23C4/11 , C23C30/00 , F01D5/288 , Y02T50/6765
摘要： Disclosed are compositions, devices and methods related to thermal barrier coating materials having enhanced toughness. In some embodiments, a multiphase ceramic can include a first phase formed from a cubic and/or a tetragonally stabilized metal oxide, and a second phase formed from a magnetoplumbite-based aluminate that is chemically compatible with the first phase. Various example applications in which such materials can be utilized are disclosed.
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公开(公告)号：US20180265412A1
公开(公告)日：2018-09-20
申请号：US15542559
申请日：2016-02-25
发明人： Atsushi Nara , Hideto Seki
IPC分类号： C04B35/453 , C23C14/08 , C23C14/34 , H01B5/14
CPC分类号： C04B35/453 , C04B35/00 , C04B2235/3284 , C04B2235/3286 , C04B2235/54 , C04B2235/77 , C23C14/08 , C23C14/086 , C23C14/34 , C23C14/3414 , H01B1/08 , H01B5/14
摘要： A sintered compact essentially consisting of zinc (Zn), gallium (Ga), silicon (Si) and oxygen (O), wherein a Zn content expressed in terms of ZnO is 5 to 60 mol %, a Ga content expressed in terms of Ga2O3 is 8.5 to 90 mol %, and a Si content expressed in terms of SiO2 is 0 to 45 mol %, and the sintered compact satisfies a condition of A≤(B+2C) when the Zn content expressed in terms of ZnO is A (mol %), the Ga content expressed in terms of Ga2O3 is B (mol %), and the Si content expressed in terms of SiO2 is C (mol %), and has a relative density of 90% or higher. An object of this invention is to efficiently obtain an amorphous film having high transmissivity and a low refractive index without having to introduce oxygen into the atmosphere during film deposition by DC sputtering.
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公开(公告)号：US10037830B2
公开(公告)日：2018-07-31
申请号：US15416013
申请日：2017-01-26
发明人： Hideo Takami , Masakatsu Ikisawa
CPC分类号： H01B1/08 , C04B35/01 , C04B35/6261 , C04B35/6263 , C04B35/62695 , C04B2235/3206 , C04B2235/3208 , C04B2235/3244 , C04B2235/3248 , C04B2235/3286 , C04B2235/3293 , C04B2235/5445 , C04B2235/604 , C04B2235/6567 , C04B2235/6585 , C04B2235/77 , C04B2235/96 , C04B2235/9653 , C23C14/086 , C23C14/34 , C23C14/3414
摘要： An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided.
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公开(公告)号：US09988309B2
公开(公告)日：2018-06-05
申请号：US13896884
申请日：2013-05-17
发明人： Michael David Hill
IPC分类号： C04B35/44 , C04B35/488 , C23C30/00 , C23C4/11 , F01D5/28
CPC分类号： C04B35/44 , C04B35/488 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3241 , C04B2235/3246 , C04B2235/3248 , C04B2235/3251 , C04B2235/3262 , C04B2235/3272 , C04B2235/3286 , C04B2235/3294 , C04B2235/3298 , C04B2235/762 , C04B2235/765 , C04B2235/768 , C04B2235/80 , C04B2235/9607 , C23C4/11 , C23C30/00 , F01D5/288
摘要： Disclosed are compositions, devices and methods related to thermal barrier coating materials having enhanced toughness. In some embodiments, a multiphase ceramic can include a first phase formed from a cubic and/or a tetragonally stabilized metal oxide, and a second phase formed from a magnetoplumbite-based aluminate that is chemically compatible with the first phase. Various example applications in which such materials can be utilized are disclosed.
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公开(公告)号：US20180079649A1
公开(公告)日：2018-03-22
申请号：US15267563
申请日：2016-09-16
发明人： Glen Harold Kirby , Julin Wan
IPC分类号： C01B35/12 , C09D1/00 , C04B35/50 , C04B35/622 , C04B35/71 , C04B41/87 , C04B41/00 , C04B41/50
CPC分类号： C01B35/128 , C04B35/01 , C04B35/2675 , C04B35/44 , C04B35/50 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3286 , C04B2235/3409 , C04B2235/3891 , C04B2235/428 , C04B2235/72 , C09D1/00 , F01D5/288 , F05D2300/123 , F05D2300/15 , F05D2300/6033 , Y02T50/672 , Y02T50/673 , C04B35/565 , C04B35/806 , C04B35/584 , C04B35/10 , C04B35/803 , C04B35/14 , C04B35/18 , C04B41/5006 , C04B41/5027 , C04B41/5096 , C04B41/5071 , C04B41/522 , C04B41/4558 , C04B41/5022 , C04B41/5024 , C04B41/5042
摘要： A compound is provided that has the formula: Ln4-x-zBxDzM2-n-yAnByO9, where Ln comprises La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof; x is 0 to about 2; D is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, where: D is not equal to Ln; if D is La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof, then z is 0 to less than 4; if D is Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, then z is 0 to about 2; M comprises Ga, Al, or a combination thereof; A comprises Fe, In, or a combination thereof; n is 0 to about 1; y is 0 to about 1; and x+y is greater than 0. In one embodiment, a composition is generally provided that includes a silicon-containing material and such a boron-doped refractory compound.
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公开(公告)号：US09868270B2
公开(公告)日：2018-01-16
申请号：US14635689
申请日：2015-03-02
发明人： Masaki Irie
IPC分类号： B32B18/00 , C04B35/115 , C04B35/117 , H01L33/50 , C09K11/77
CPC分类号： B32B18/00 , C04B35/115 , C04B35/117 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3286 , C04B2235/5436 , C04B2235/5445 , C04B2235/6581 , C04B2235/764 , C04B2235/77 , C04B2235/783 , C04B2235/786 , C04B2235/96 , C04B2235/963 , C04B2237/343 , C04B2237/704 , C09K11/7774 , H01L33/505
摘要： Provided is a wavelength converting member made of a sintered body which inhibits color unevenness of exit light after wavelength conversion and has excellent light emitting efficiency and inhibited decrease in mechanical strength. The wavelength converting member includes a plate-like sintered body having one principal surface as a light entrance surface and the other principal surface as a light exit surface, and a porosity of 0.1% or less with fluorescent material grains containing an activator and light-transmitting material grains, the entrance surface and the exit surface are sintered surfaces in which the fluorescent material grains and light-transmitting material grains are exposed without processing. The sintered surface has an average roughness Ra of 0.1 μm to 0.5 μm, the fluorescent material grains exposed on a surface have an average roughness Ra1 of 0.2 nm to 0.5 nm, and the light-transmitting material grains exposed on a surface have an average roughness Ra2 of 0.3 nm to 0.7 nm.
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10.发明申请公开(公告)号：US20170345653A1
公开(公告)日：2017-11-30
申请号：US15520983
申请日：2015-11-16
IPC分类号： H01L21/02 , C23C14/08 , C04B35/01 , H01L29/24 , H01L21/465 , H01J37/34 , C23C14/34 , H01L29/786
CPC分类号： H01L21/02565 , C03C17/245 , C03C2217/23 , C03C2218/156 , C04B35/01 , C04B35/6261 , C04B2235/3217 , C04B2235/3222 , C04B2235/3286 , C04B2235/5445 , C04B2235/604 , C04B2235/6562 , C04B2235/6565 , C04B2235/6586 , C04B2235/72 , C04B2235/76 , C04B2235/80 , C04B2235/96 , C23C14/08 , C23C14/3407 , C23C14/3414 , C23C14/5806 , H01B1/08 , H01J37/3426 , H01L21/02422 , H01L21/02592 , H01L21/02631 , H01L21/02664 , H01L21/465 , H01L29/247 , H01L29/7869
摘要： Provided are an oxide sintered compact whereby low carrier density and high carrier mobility are obtained when the oxide sintered compact is used to obtain an oxide semiconductor thin film by a sputtering method, and a sputtering target which uses the oxide sintered compact. This oxide sintered compact contains oxides of indium, gallium, and aluminum. The gallium content is from 0.15 to 0.49 by Ga/(In+Ga) atomic ratio, and the aluminum content is from 0.0001 to less than 0.25 by Al/(In+Ga+Al) atomic ratio. A crystalline oxide semiconductor thin film formed using this oxide sintered compact as a sputtering target is obtained at a carrier density of 4.0×1018 cm−3 or less and a carrier mobility of 10 cm−2V−1sec−1 or greater.
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