公开(公告)号：US20180327896A1

公开(公告)日：2018-11-15

申请号：US16034834

申请日：2018-07-13

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： DA-MING ZHUANG ,  MING ZHAO ,  MING-JIE CAO ,  LI GUO ,  SHI-LU ZHAN ,  XIAO-LONG LI

IPC: C23C14/34 ,  C23C14/08

CPC classification number: C23C14/3414 ,  B28B3/00 ,  C23C14/08 ,  H01J37/3414 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3491

Abstract: A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10−2 Ωcm to about 10 Ωcm. A weight percentage of crystalline In2CexZnO4+2x in the sputtering target is larger than 80%.

公开(公告)号：US09920419B2

公开(公告)日：2018-03-20

申请号：US14424123

申请日：2013-08-21

Applicant: HITACHI CHEMICAL COMPANY, LTD.

Inventor： Shunsuke Ueda ,  Eisuke Haba

IPC: C23C14/34 ,  C23C14/22 ,  H01J37/34 ,  C23C14/50 ,  B22F1/02

CPC classification number: C23C14/223 ,  B22F1/025 ,  C23C14/3407 ,  C23C14/505 ,  H01J37/34 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/347

Abstract: A drum sputtering device that can uniformly deposit target atoms on all over particles is provided. The drum sputtering device includes a vacuum container 2 that contains particles, a tubular drum 10 that is arranged inside the vacuum container 2 and at least one end face 10c of which is open, and a sputtering target 16 that is arranged inside the drum 10. With a supporting arm 11, a drive motor 12 for rotation, a drive motor 13 for swing, a first gear member 14, and a second gear member 15, the drum can be rotated around the axis of the drum 10 and the drum 10 can be swung so that one end portion 10e and the other end portion 10f in the axial direction of the drum 10 are relatively vertically switched.

公开(公告)号：US09881774B2

公开(公告)日：2018-01-30

申请号：US14549778

申请日：2014-11-21

Applicant: Jesse A. Frantz ,  Jasbinder S. Sanghera ,  Robel Y. Bekele ,  Vinh Q. Nguyen ,  Ishwar D. Aggarwal ,  Allan J. Bruce ,  Michael Cyrus ,  Sergey V. Frolov

Inventor： Jesse A. Frantz ,  Jasbinder S. Sanghera ,  Robel Y. Bekele ,  Vinh Q. Nguyen ,  Ishwar D. Aggarwal ,  Allan J. Bruce ,  Michael Cyrus ,  Sergey V. Frolov

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/08 ,  C23C14/06 ,  H01L21/02 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/18

CPC classification number: H01J37/3429 ,  C23C14/0623 ,  C23C14/087 ,  C23C14/3414 ,  C23C14/3464 ,  H01J37/3414 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/0368 ,  H01L31/03923 ,  H01L31/18 ,  Y02E10/541

Abstract: A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.

公开(公告)号：US20170327940A1

公开(公告)日：2017-11-16

申请号：US15668631

申请日：2017-08-03

Applicant: View, Inc.

Inventor： Martin John Neumann ,  Que Anh Song Nguyen ,  Disha Mehtani ,  Anshu A. Pradhan ,  Robert T. Rozbicki ,  Dhairya Shrivastava ,  Sridhar Kailasam ,  Trevor Frank ,  Jason Satern ,  Todd Martin

IPC: C23C14/34 ,  C01G19/02 ,  C01G9/02 ,  C08L23/06 ,  C01B33/113

CPC classification number: C23C14/3407 ,  C01B33/113 ,  C01G9/02 ,  C01G19/02 ,  C08L23/06 ,  C23C14/3414 ,  H01J37/3414 ,  H01J37/3426 ,  H01J37/3435

Abstract: Described are methods of fabricating lithium sputter targets, lithium sputter targets, associated handling apparatus, and sputter methods including lithium targets. Various embodiments address adhesion of the lithium metal target to a support structure, avoiding and/or removing passivating coatings formed on the lithium target, uniformity of the lithium target as well as efficient cooling of lithium during sputtering. Target configurations used to compensate for non-uniformities in sputter plasma are described. Modular format lithium tiles and methods of fabrication are described. Rotary lithium sputter targets are also described.

公开(公告)号：US09771646B2

公开(公告)日：2017-09-26

申请号：US14112909

申请日：2012-04-20

Applicant: Martin John Neumann ,  Que Anh Song Nguyen ,  Disha Mehtani ,  Anshu A. Pradhan ,  Robert T. Rozbicki ,  Dhairya Shrivastava ,  Trevor Frank ,  Todd Martin

Inventor： Martin John Neumann ,  Que Anh Song Nguyen ,  Disha Mehtani ,  Anshu A. Pradhan ,  Robert T. Rozbicki ,  Dhairya Shrivastava ,  Trevor Frank ,  Todd Martin

IPC: C23C14/34 ,  H01J37/34

CPC classification number: C23C14/3407 ,  C01B33/113 ,  C01G9/02 ,  C01G19/02 ,  C08L23/06 ,  C23C14/3414 ,  H01J37/3414 ,  H01J37/3426 ,  H01J37/3435

Abstract: Described are methods of fabricating lithium sputter targets, lithium sputter targets, associated handling apparatus, and sputter methods including lithium targets. Various embodiments address adhesion of the lithium metal target to a support structure, avoiding and/or removing passivating coatings formed on the lithium target, uniformity of the lithium target as well as efficient cooling of lithium during sputtering. Target configurations used to compensate for non-uniformities in sputter plasma are described. Modular format lithium tiles and methods of fabrication are described. Rotary lithium sputter targets are also described.

公开(公告)号：US09728382B2

公开(公告)日：2017-08-08

申请号：US14163650

申请日：2014-01-24

Applicant: SULZER METAPLAS GMBH

Inventor： Joerg Vetter ,  Stefan Esser ,  Juergen Mueller ,  Georg Erkens

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/24 ,  C23C14/32 ,  H01J37/32

CPC classification number: H01J37/3414 ,  C23C14/243 ,  C23C14/325 ,  C23C14/3407 ,  H01J37/32055 ,  H01J37/32614 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3497

Abstract: Evaporation source, in particular for use in a sputtering process or in a vacuum arc evaporation process, preferably a cathode vacuum arc evaporation process. The evaporation source includes an inner base body which is arranged in an outer carrier body and which is arranged with respect to the outer carrier body such that a cooling space in flow communication with an inlet and an outlet is formed between the base body and the carrier body. In accordance with the invention, the cooling space includes an inflow space and an outflow space, and the inflow space is in flow communication with the outflow space via an overflow connection for the cooling of the evaporation source such that a cooling fluid can be conveyed from the inlet via the inflow space the overflow connection and the outflow space to the outlet.

公开(公告)号：US09556509B2

公开(公告)日：2017-01-31

申请号：US13885593

申请日：2011-11-21

Applicant: Ricardo Mikalo ,  Jens Dienelt

Inventor： Ricardo Mikalo ,  Jens Dienelt

IPC: C23C14/00 ,  C23C14/34 ,  H01J37/34

CPC classification number: C23C14/34 ,  C23C14/3407 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3426

Abstract: A method, comprising: generating a vapor of a material from a source of said material comprising a plurality of separate solid pieces of said material supported on a surface of a base in a configuration in which said plurality of solid pieces of said target material are arranged at two or more levels to cover the whole of said surface of said base while providing a gap between adjacent pieces at the same level; and depositing said material from said vapor onto a substrate.

Abstract translation: 一种方法，包括：从所述材料的源产生材料的蒸气，所述材料的蒸气包括多个分离的所述材料的固体块，所述多个独立的固体块支撑在基体的表面上，所述构型中所述多个所述目标材料的固体块被布置 在两个或更多个水平上以覆盖所述基座的整个所述表面，同时在相同水平面上的相邻块之间提供间隙; 以及将所述材料从所述蒸气沉积到基底上。

公开(公告)号：US20160189940A1

公开(公告)日：2016-06-30

申请号：US15061936

申请日：2016-03-04

Applicant: SolarCity Corporation

Inventor： Zhigang Xie ,  Wei Wang ,  Zheng Xu ,  Jianming Fu

IPC: H01J37/34 ,  H01L31/0216 ,  H01J37/32 ,  C23C14/35 ,  H01L31/18

CPC classification number: H01J37/3414 ,  C23C14/3407 ,  C23C14/351 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3438 ,  H01J37/3444 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/347 ,  H01L31/02168 ,  H01L31/1876 ,  H01L31/1884 ,  Y02E10/50

Abstract: One embodiment of the present invention provides a sputtering system for large-scale fabrication of solar cells. The sputtering system includes a reaction chamber, a rotary target situated inside the reaction chamber which is capable of rotating about a longitudinal axis, and an RF power source coupled to at least one end of the rotary target to enable RF sputtering. The length of the rotary target is between 0.5 and 5 meters.

Abstract translation: 本发明的一个实施例提供了一种用于大规模制造太阳能电池的溅射系统。 溅射系统包括反应室，位于反应室内部的能够围绕纵向轴线旋转的旋转靶，以及耦合到旋转靶的至少一端以实现RF溅射的RF电源。 旋转靶的长度在0.5到5米之间。

公开(公告)号：US09255322B2

公开(公告)日：2016-02-09

申请号：US13436776

申请日：2012-03-30

Applicant: Donny Young ,  Alan Ritchie ,  Muhammad Rasheed ,  Keith A. Miller

Inventor： Donny Young ,  Alan Ritchie ,  Muhammad Rasheed ,  Keith A. Miller

IPC: C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  H01J37/34

CPC classification number: C23C14/3407 ,  C23C14/35 ,  H01J37/32577 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3414

Abstract: A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.

Abstract translation: 处理系统可以包括具有与其正交的中心轴的目标; 源分布板，其具有与所述靶的背面相对的目标面对侧，其中所述源分配板包括多个第一特征，使得沿着给定第一直径的第一径向RF分配路径的第一距离大约等于第二特征 沿着给定的第一直径的相对的第二径向RF分配路径的距离; 以及与所述源分配板的目标相对侧相对的并且具有围绕所述中心轴线设置并对应于所述多个第一特征的多个第二特征的接地板，其中沿着给定的第二部分的第一径向RF返回路径的第三距离 直径约等于沿着给定的第二直径的相对的第二径向RF返回路径的第四距离。

公开(公告)号：US09139900B2

公开(公告)日：2015-09-22

申请号：US13504329

申请日：2011-07-07

Applicant: Yousuke Endo ,  Masaru Sakamoto

Inventor： Yousuke Endo ,  Masaru Sakamoto

IPC: C23C14/00 ,  C23C14/34 ,  H01J37/34

CPC classification number: C23C14/3414 ,  H01J37/3414 ,  H01J37/3426 ,  Y10T29/49991

Abstract: The present invention provides an indium target and manufacturing method thereof, where deposition rate is high, initial discharge voltage is low, and deposition rate and discharge voltage, from the start of sputtering to the end of sputtering, are stable. In the indium target, an aspect ratio (length of longer direction/length of shorter direction) of crystal particle, observed from cross-section direction of the target, is 2.0 or less.

Abstract translation: 本发明提供了一种铟靶及其制备方法，其沉积速率高，初始放电电压低，并且从溅射开始到溅射结束时的沉积速率和放电电压都是稳定的。 在铟靶中，从靶的截面方向观察到的结晶粒子的长径比（长度方向/长度方向的长度）为2.0以下。