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    Conformal films on semiconductor substrates
    1.
    发明授权
    Conformal films on semiconductor substrates 有权
    半导体衬底上的保形膜

    公开(公告)号：US09117884B1

    公开(公告)日：2015-08-25

    申请号：US13619077

    申请日：2012-09-14

    申请人： Roey Shaviv ,  Sanjay Gopinath ,  Peter Holverson ,  Anshu A. Pradhan

    发明人： Roey Shaviv ,  Sanjay Gopinath ,  Peter Holverson ,  Anshu A. Pradhan

    IPC分类号： H01L21/687 ,  C23C14/04 ,  H01L21/768 ,  C23C14/02 ,  H01L21/285

    CPC分类号： H01L21/76843 ,  C23C14/025 ,  C23C14/046 ,  H01L21/2855 ,  H01L21/68714 ,  H01L21/76805 ,  H01L21/76865 ,  H01L21/76873

    摘要： A layer of diffusion barrier or seed material is deposited on a semiconductor substrate having a recessed feature. The method may include a series of new deposition cycles, for example, a first net deposition cycle and a second net deposition cycle. The first net deposition cycle includes depositing a first deposited amount of the diffusion barrier or seed material and etching a first etched amount of the diffusion barrier or seed material. The second net deposition cycle including depositing a second deposited amount of the diffusion barrier or seed material and etching a second etched amount of the diffusion barrier or seed material. At least one of the process parameters of the first cycle differs from that of the second allows providing a graded deposition effects to reduce a risk of damaging any under layers and dielectric. A deposited layer of diffusion barrier or seed material is generally more conformal.

    摘要翻译： 扩散阻挡层或种子材料层沉积在具有凹陷特征的半导体衬底上。 该方法可以包括一系列新的沉积循环，例如第一净沉积循环和第二净沉积循环。 第一净沉积循环包括沉积第一沉积量的扩散阻挡物或种子材料并蚀刻第一蚀刻量的扩散阻挡层或种子材料。 第二净沉积循环包括沉积第二沉积量的扩散阻挡层或种子材料并蚀刻第二蚀刻量的扩散阻挡层或种子材料。 第一循环的工艺参数中的至少一个不同于第二循环的工艺参数允许提供分级沉积效应以降低损坏任何下层和电介质的风险。 扩散阻挡层或种子材料的沉积层通常更为共形。

    Conformal films on semiconductor substrates
    2.
    发明授权
    Conformal films on semiconductor substrates 有权
    半导体衬底上的保形膜

    公开(公告)号：US08298933B2

    公开(公告)日：2012-10-30

    申请号：US12467200

    申请日：2009-05-15

    申请人： Roey Shaviv ,  Sanjay Gopinath ,  Peter Holverson ,  Anshu A. Pradhan

    发明人： Roey Shaviv ,  Sanjay Gopinath ,  Peter Holverson ,  Anshu A. Pradhan

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76843 ,  C23C14/025 ,  C23C14/046 ,  H01L21/2855 ,  H01L21/68714 ,  H01L21/76805 ,  H01L21/76865 ,  H01L21/76873

    摘要： A layer of diffusion barrier or seed material is deposited on a semiconductor substrate having a recessed feature. The method may include a series of new deposition cycles, for example, a first net deposition cycle and a second net deposition cycle. The first net deposition cycle includes depositing a first deposited amount of the diffusion barrier or seed material and etching a first etched amount of the diffusion barrier or seed material. The second net deposition cycle including depositing a second deposited amount of the diffusion barrier or seed material and etching a second etched amount of the diffusion barrier or seed material. At least one of the process parameters of the first cycle differs from that of the second allows providing a graded deposition effects to reduce a risk of damaging any under layers and dielectric. A deposited layer of diffusion barrier or seed material is generally more conformal.

    摘要翻译： 扩散阻挡层或种子材料层沉积在具有凹陷特征的半导体衬底上。 该方法可以包括一系列新的沉积循环，例如第一净沉积循环和第二净沉积循环。 第一净沉积循环包括沉积第一沉积量的扩散阻挡物或种子材料并蚀刻第一蚀刻量的扩散阻挡层或种子材料。 第二净沉积循环包括沉积第二沉积量的扩散阻挡层或种子材料并蚀刻第二蚀刻量的扩散阻挡层或种子材料。 第一循环的工艺参数中的至少一个不同于第二循环的工艺参数允许提供分级沉积效应以降低损坏任何下层和电介质的风险。 扩散阻挡层或种子材料的沉积层通常更为共形。

    Method and apparatus for increasing local plasma density in magnetically confined plasma
    3.
    发明授权
    Method and apparatus for increasing local plasma density in magnetically confined plasma 有权
    用于增加磁限制等离子体中局部等离子体密度的方法和装置

    公开(公告)号：US07922880B1

    公开(公告)日：2011-04-12

    申请号：US11807182

    申请日：2007-05-24

    申请人： Anshu A. Pradhan ,  Douglas B. Hayden ,  Ronald L. Kinder ,  Alexander Dulkin

    发明人： Anshu A. Pradhan ,  Douglas B. Hayden ,  Ronald L. Kinder ,  Alexander Dulkin

    IPC分类号： C23C14/35 ,  C23C16/00

    CPC分类号： C23C14/351 ,  H01J37/3266 ,  H01J37/3405 ,  H01J37/3461

    摘要： Local plasma density, e.g., the plasma density in the vicinity of the substrate, is increased by providing an ion extractor configured to transfer ions and electrons from a first region of magnetically confined plasma (typically a region of higher density plasma) to a second region of plasma (typically a region of lower density plasma). The second region of plasma is preferably also magnetically shaped or confined and resides between the first region of plasma and the substrate. A positively biased conductive member positioned proximate the second region of plasma serves as an ion extractor. A positive bias of about 50-300 V is applied to the ion extractor causing electrons and subsequently ions to be transferred from the first region of plasma to the vicinity of the substrate, thereby forming higher density plasma. Provided methods and apparatus are used for deposition and resputtering.

    摘要翻译： 局部等离子体密度例如衬底附近的等离子体密度通过提供离子提取器来增加，该离子提取器配置成将离子和电子从磁限制等离子体（通常是较高密度等离子体的区域）的第一区域转移到第二区域 的等离子体（通常是较低密度等离子体的区域）。 等离子体的第二区域优选地也是磁性地形成或限制的并且位于等离子体的第一区域和衬底之间。 靠近等离子体的第二区域定位的有偏压的导电构件用作离子提取器。 对离子提取器施加约50-300V的正偏压，引起电子，随后离子从等离子体的第一区域转移到衬底附近，从而形成更高密度的等离子体。 所提供的方法和装置用于沉积和再溅射。

    Use of ultra-high magnetic fields in resputter and plasma etching
    5.
    发明授权
    Use of ultra-high magnetic fields in resputter and plasma etching 有权
    在溅射和等离子体蚀刻中使用超高磁场

    公开(公告)号：US07897516B1

    公开(公告)日：2011-03-01

    申请号：US11807183

    申请日：2007-05-24

    申请人： Ronald L. Kinder ,  Anshu A. Pradhan

    发明人： Ronald L. Kinder ,  Anshu A. Pradhan

    IPC分类号： H01L21/302

    CPC分类号： H01L21/32131 ,  H01J37/321 ,  H01J37/3402 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76865 ,  H01L21/76873

    摘要： Methods for resputtering and plasma etching include an operation of generating an ultra-high density plasma using an ultra-high magnetic field. For example, a plasma density of at least about 1013 electrons/cm3 is achieved by confining a plasma using a magnetic field of at least about 1 Tesla. The ultra-high density plasma is used to create a high flux of low energy ions at the wafer surface. The formed high density low energy plasma can be used to sputter etch a diffusion barrier or a seed layer material in the presence of an exposed low-k dielectric layer. For example, a diffusion barrier material can be etched with a high etch rate to deposition rate (E/D) ratio (e.g., with E/D>2) without substantially damaging an exposed dielectric layer. Resputtering and plasma etching can be performed, for example, in iPVD and in plasma pre-clean tools, equipped with magnets configured for confining a plasma.

    摘要翻译： 用于再溅射和等离子体蚀刻的方法包括使用超高磁场产生超高密度等离子体的操作。 例如，通过使用至少约1特斯拉的磁场约束等离子体来实现至少约1013电子/ cm 3的等离子体密度。 超高密度等离子体用于在晶片表面产生高能量的低能量离子。 形成的高密度低能量等离子体可用于在暴露的低k电介质层的存在下溅射蚀刻扩散阻挡层或种子层材料。 例如，扩散阻挡材料可以以高的蚀刻速率对沉积速率（E / D）比（例如，E / D> 2）进行蚀刻，而不会显着损坏暴露的介电层。 溅射和等离子体蚀刻可以例如在iPVD和等离子体预清洁工具中进行，其中配备有用于限制等离子体的磁体。

    Atomic layer profiling of diffusion barrier and metal seed layers
    7.
    发明授权
    Atomic layer profiling of diffusion barrier and metal seed layers 有权
    扩散阻挡层和金属种子层的原子层分布

    公开(公告)号：US07842605B1

    公开(公告)日：2010-11-30

    申请号：US11807179

    申请日：2007-05-24

    申请人： Anshu A. Pradhan ,  Robert Rozbicki

    发明人： Anshu A. Pradhan ,  Robert Rozbicki

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/2855 ,  C23C14/046 ,  C23C14/345 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76865

    摘要： Material is removed from a substrate surface (e.g., from a bottom portion of a recessed feature on a partially fabricated semiconductor substrate) by subjecting the surface to a plurality of profiling cycles, wherein each profiling cycle includes a net etching operation and a net depositing operation. An etching operation removes a greater amount of material than is being deposited by a depositing operation, thereby resulting in a net material etch-back per profiling cycle. About 2-10 profiling cycles are performed. The profiling cycles are used for removing metal-containing materials, such as diffusion barrier materials, copper line materials, and metal seed materials by PVD deposition and resputter. Profiling with a plurality of cycles removes metal-containing materials without causing microtrenching in an exposed dielectric. Further, overhang is reduced at the openings of the recessed features and sidewall material coverage is improved. Integrated circuit devices having higher reliability are fabricated.

    摘要翻译： 通过对表面进行多个轮廓循环，从衬底表面（例如，从部分制造的半导体衬底上的凹陷特征的底部）去除材料，其中每个成形循环包括净蚀刻操作和净沉积操作 。 蚀刻操作除去比通过沉积操作沉积的更大量的材料，从而导致每个轮廓循环的网状材料回蚀。 执行约2-10个分析周期。 成型周期用于通过PVD沉积和重新溅射去除含金属材料，例如扩散阻挡材料，铜线材料和金属种子材料。 多次循环的分析除去含金属材料，而不会在暴露的电介质中引起微切削。 此外，凹陷部件的开口处的突出部分减小，并且改善了侧壁材料的覆盖。 制造具有更高可靠性的集成电路器件。

    Method and apparatus for increasing local plasma density in magnetically confined plasma
    9.
    发明授权
    Method and apparatus for increasing local plasma density in magnetically confined plasma 有权
    用于增加磁限制等离子体中局部等离子体密度的方法和装置

    公开(公告)号：US08449731B1

    公开(公告)日：2013-05-28

    申请号：US13033349

    申请日：2011-02-23

    申请人： Anshu A. Pradhan ,  Douglas B. Hayden ,  Ronald L. Kinder ,  Alexander Dulkin

    发明人： Anshu A. Pradhan ,  Douglas B. Hayden ,  Ronald L. Kinder ,  Alexander Dulkin

    IPC分类号： H01L21/311 ,  C23C14/35 ,  C23F1/00

    CPC分类号： C23C14/351 ,  H01J37/3266 ,  H01J37/3405 ,  H01J37/3461

    摘要： Local plasma density, e.g., the plasma density in the vicinity of the substrate, is increased by providing an ion extractor configured to transfer ions and electrons from a first region of magnetically confined plasma (typically a region of higher density plasma) to a second region of plasma (typically a region of lower density plasma). The second region of plasma is preferably also magnetically shaped or confined and resides between the first region of plasma and the substrate. A positively biased conductive member positioned proximate the second region of plasma serves as an ion extractor. A positive bias of about 50-300 V is applied to the ion extractor causing electrons and subsequently ions to be transferred from the first region of plasma to the vicinity of the substrate, thereby forming higher density plasma. Provided methods and apparatus are used for deposition and resputtering.

    摘要翻译： 局部等离子体密度例如衬底附近的等离子体密度通过提供离子提取器来增加，该离子提取器配置成将离子和电子从磁限制等离子体（通常是较高密度等离子体的区域）的第一区域转移到第二区域 的等离子体（通常是较低密度等离子体的区域）。 等离子体的第二区域优选地也是磁性地形成或限制的并且位于等离子体的第一区域和衬底之间。 靠近等离子体的第二区域定位的有偏压的导电构件用作离子提取器。 对离子提取器施加约50-300V的正偏压，引起电子，随后离子从等离子体的第一区域转移到衬底附近，从而形成更高密度的等离子体。 所提供的方法和装置用于沉积和再溅射。

    ELECTROCHROMIC DEVICES
    10.
    发明申请
    ELECTROCHROMIC DEVICES 有权
    电致发光器件

    公开(公告)号：US20120275008A1

    公开(公告)日：2012-11-01

    申请号：US13462725

    申请日：2012-05-02

    申请人： Anshu A. Pradhan ,  Robert T. Rozbicki

    发明人： Anshu A. Pradhan ,  Robert T. Rozbicki

    IPC分类号： G02F1/15 ,  C23C14/34 ,  C23C14/08

    CPC分类号： G02F1/1506 ,  C03C2217/91 ,  C09K9/00 ,  C23C14/08 ,  C23C14/083 ,  C23C14/085 ,  C23C14/14 ,  C23C14/34 ,  C23C14/3464 ,  C23C14/568 ,  G02F1/1525 ,  G02F1/155 ,  G02F2001/1512 ,  G02F2001/1555

    摘要： Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

    摘要翻译： 常规的电致变色器件经常具有差的可靠性和差的性能。 使用完全固体和无机材料进行改进。 通过形成用作IC层的离子传导电绝缘界面区域来制造电致变色器件。 在一些方法中，在形成电致变色剂和对电极层之后形成界面区域。 界面区域包含离子传导电绝缘材料以及电致变色和/或对电极层的成分。 与常规设备相比，电致变色器件的材料和微结构提供了性能和可靠性的改进。