公开(公告)号：US20230143320A1

公开(公告)日：2023-05-11

申请号：US18094757

申请日：2023-01-09

申请人： Honeywell International Inc.

发明人： Jaeyeon Kim ,  Patrick Underwood ,  Susan D. Strothers ,  Shih-Yao Lin ,  Michael D. Payton ,  Scott R. Sayles

IPC分类号： C23C14/56 ,  H01J37/34 ,  C23C14/34

CPC分类号： C23C14/564 ,  C23C14/3407 ,  H01J37/3435 ,  H01J37/3491

摘要： An aluminum or copper alloy sputtering chamber includes a front surface, a back surface opposite the front surface, and a sputter trap formed on at least a portion of the front surface A coating of titanium particles is formed on the sputter trap.

公开(公告)号：US20180304400A1

公开(公告)日：2018-10-25

申请号：US15770857

申请日：2017-07-10

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Mikio TAKIGAWA ,  Toshiyuki TERASAWA

IPC分类号： B23K20/02 ,  C23C14/34

CPC分类号： B23K20/023 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/3491

摘要： A process for producing a sputtering target in which a target material is diffusion-bonded to a top face of a backing plate material, the process comprising:a step of heating the top face of the target material by a hot plate while pressing from above thereby diffusion-bonding the target material to the backing plate material in such a manner that the step is performed at a center part prior to an outer peripheral part of the top face.

公开(公告)号：US09758860B2

公开(公告)日：2017-09-12

申请号：US13819499

申请日：2012-08-15

申请人： Yousuke Endo ,  Masaru Sakamoto

发明人： Yousuke Endo ,  Masaru Sakamoto

IPC分类号： C23C14/00 ,  C23C14/34 ,  H01J37/34

CPC分类号： C23C14/3414 ,  H01J37/3414 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/3491

摘要： An indium sputtering target with a short time to attain a stable film deposition rate once sputtering has begun is provided. An indium sputtering target having a surface to be sputtered with an arithmetic average roughness Ra of from 5 μm to 70 μm prior to sputtering.

公开(公告)号：US20170213711A1

公开(公告)日：2017-07-27

申请号：US15480733

申请日：2017-04-06

申请人： MITSUBISHI MATERIALS CORPORATION

发明人： Satoru Mori ,  Toshio Sakamoto ,  Kiyoyuki Ookubo

IPC分类号： H01J37/34 ,  C22C9/00 ,  B22D11/108 ,  C22F1/08 ,  B22D11/00 ,  C23C14/34 ,  B22D7/00

CPC分类号： H01J37/3429 ,  B22D7/005 ,  B22D11/004 ,  B22D11/108 ,  C22C1/02 ,  C22C9/00 ,  C22F1/08 ,  C23C14/3414 ,  H01J37/3491

摘要： A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting theCa; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.

公开(公告)号：US20170130328A1

公开(公告)日：2017-05-11

申请号：US15321863

申请日：2015-06-25

申请人： SUMITOMO METAL MINING CO., LTD.

发明人： Makoto OZAWA ,  Isao ANDO

IPC分类号： C23C14/34 ,  C04B37/02 ,  H01J37/34 ,  C04B35/457

CPC分类号： C23C14/3407 ,  C04B35/457 ,  C04B37/021 ,  C04B37/023 ,  C04B41/80 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2237/12 ,  C04B2237/34 ,  C04B2237/402 ,  C04B2237/403 ,  C04B2237/406 ,  C04B2237/407 ,  C04B2237/52 ,  C23C14/34 ,  C23C14/3414 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3491

摘要： Provided is a sputtering target having extremely low occurrence of arcing or nodules, and a method for manufacturing such a sputtering target. A flat plate-shaped or cylindrical target material (3, 13) is obtained by processing a material composed of an oxide sintered body. In doing so, a grindstone having a specified grade is used to perform rough grinding of a surface of the material that will become a sputtering surface (5, 15) one or more times in accordance to the grade of the grindstone, after which zero grinding is performed one or more times so that the surface roughness of the sputtering surface (5, 15) has an arithmetic mean roughness Ra of 0.9 μm or more, a maximum height Rz of 10.0 μm or less, and RzJIS roughness of 7.0 μm or less. A sputtering target (1, 11) is obtained by bonding the obtained target material (3, 13) to a backing body (2, 12) by way of a bonding layer (4, 14).

公开(公告)号：US20170009336A1

公开(公告)日：2017-01-12

申请号：US15271911

申请日：2016-09-21

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA MATERIALS CO., LTD.

发明人： Tooru KOMATSU ,  Nobuaki NAKASHIMA

IPC分类号： C23C14/34 ,  H01J37/34 ,  C23G1/10 ,  C22F1/18 ,  C22F1/10 ,  C23C14/14 ,  B22D7/00

CPC分类号： C23C14/3414 ,  B22D7/005 ,  C22F1/10 ,  C22F1/18 ,  C22F1/183 ,  C23C14/14 ,  C23G1/02 ,  C23G1/10 ,  C23G1/106 ,  H01J37/3426 ,  H01J37/3491

摘要： The manufacturing cost of a sputtering target is reduced and the impurity concentration of the manufactured sputtering target is also reduced. A method of manufacturing a sputtering target includes: surface-treating at least one of a used sputtering target and a scrap material; melting at least one of the used sputtering target and the scrap material after the surface treatment to form an ingot; and manufacturing a sputtering target by subjecting the ingot to forging, rolling, heat treating, and machining.

摘要翻译： 溅射靶的制造成本降低，制造的溅射靶的杂质浓度也降低。 制造溅射靶的方法包括：对所使用的溅射靶和废料中的至少一种进行表面处理; 在表面处理之后熔化所使用的溅射靶和废料中的至少一个以形成锭; 并通过对锭进行锻造，轧制，热处理和机加工来制造溅射靶。

公开(公告)号：US09543444B2

公开(公告)日：2017-01-10

申请号：US14487916

申请日：2014-09-16

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Katsushi Kishimoto ,  Yoshinori Tanaka ,  Yeon Keon Moon ,  Sang Woo Sohn ,  Sang Won Shin ,  Takayuki Fukasawa

IPC分类号： H01L29/786 ,  H01L29/26 ,  H01J37/34

CPC分类号： H01L29/7869 ,  C23C14/3414 ,  H01J37/3429 ,  H01J37/3491 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78693

摘要： An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.

摘要翻译： 氧化物溅射靶包括铟（In），锌（Zn），锡（Sn）和镓（Ga）以及钨（W）中的至少一种，其量为0.005mol％至1mol％。

公开(公告)号：US20160281214A1

公开(公告)日：2016-09-29

申请号：US15082035

申请日：2016-03-28

申请人： JX NIPPON MINING & METALS CORPORATION

发明人： Yohei YAMAGUCHI

IPC分类号： C23C14/34 ,  C04B35/453 ,  C04B35/64 ,  C04B35/457 ,  C23C14/08 ,  H01J37/34

CPC分类号： C23C14/3414 ,  C04B35/01 ,  C04B35/453 ,  C04B35/457 ,  C04B2235/3284 ,  C04B2235/3293 ,  C04B2235/5409 ,  C04B2235/604 ,  C04B2235/608 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/77 ,  C04B2235/94 ,  C04B2235/963 ,  C23C14/086 ,  C23C14/3407 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/3491

摘要： A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.

摘要翻译： 圆柱形溅射靶包括彼此相邻的多个圆柱形烧结体，同时它们之间具有间隔。 多个圆筒状烧结体的相对密度为99.7％以上且99.9％以下。 相邻的多个圆筒状烧结体的相对密度为0.1％以下。

公开(公告)号：US20160208377A1

公开(公告)日：2016-07-21

申请号：US14914385

申请日：2015-03-04

申请人： JX NIPPON MINING & METALS CORPORATION

发明人： Kunihiro ODA

IPC分类号： C23C14/34 ,  C22F1/18 ,  C21D9/00 ,  C21D8/02 ,  H01L23/532 ,  C23C14/14 ,  C23C14/06 ,  H01L21/285 ,  H01L21/768 ,  H01J37/34 ,  C23C8/24

CPC分类号： C23C14/3414 ,  B22D21/06 ,  C21D8/0221 ,  C21D8/0273 ,  C21D9/0062 ,  C22C27/02 ,  C22F1/18 ,  C23C8/24 ,  C23C14/0641 ,  C23C14/14 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3491 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/76841 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A tantalum sputtering target, wherein an orientation rate of a (100) plane of a sputtering surface of the tantalum sputtering target is 30 to 90%, and an orientation rate of a (111) plane of a sputtering surface of the tantalum sputtering target is 50% or less. A method of producing a tantalum sputtering target, wherein a molten tantalum ingot is subject to forging and recrystallization annealing and thereafter subject to rolling and heat treatment in order to form a crystal structure in which an orientation rate of a (100) plane of the tantalum sputtering target is 30 to 90%, and an orientation rate of a (111) plane of the tantalum sputtering target is 50% or less.The present invention yields effects of being able to reduce the integral power consumption for burn-in of the tantalum target, easily generate plasma, stabilize the deposition rate, and reduce the resistance variation of the film by controlling the crystal orientation of the target.

摘要翻译： 一种钽溅射靶，其中钽溅射靶的溅射表面的（100）面的取向速率为30〜90％，钽溅射靶的溅射表面的（111）面取向率为 50％以下。 一种制造钽溅射靶的方法，其中熔融钽锭进行锻造和再结晶退火，然后进行轧制和热处理，以形成其中钽的（100）面的取向速率 溅射靶为30〜90％，钽溅射靶的（111）面取向率为50％以下。 本发明产生能够降低钽靶的老化的积分功率消耗的效果，容易产生等离子体，稳定沉积速率，并且通过控制靶的晶体取向来降低膜的电阻变化。

公开(公告)号：US09373485B2

公开(公告)日：2016-06-21

申请号：US14618416

申请日：2015-02-10

申请人： Applied Materials, Inc.

发明人： John C. Forster ,  Xianmin Tang

IPC分类号： B23K31/02 ,  H01J37/34 ,  C23C14/34 ,  B23K1/00

CPC分类号： H01J37/3491 ,  B23K1/0008 ,  B23K31/02 ,  C23C14/3407 ,  H01J37/3435 ,  H01J37/3441 ,  H01J2237/332 ,  Y10T29/49826 ,  Y10T29/49947

摘要： Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield.