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公开(公告)号：US10822691B2
公开(公告)日：2020-11-03
申请号：US15560258
申请日：2016-03-10
发明人： Yuki Yoshida , Toshiaki Ueda , Satoru Mori
摘要： A Cu—Ga alloy sputtering target of the present invention is made of a Cu—Ga alloy, in which a carbon concentration is 30 ppm by mass or lower. In an observed structure, an area ratio of crystal grains having a grain size of 10 μm or less is 5% to 50% and an area ratio of crystal grains having a grain size of 100 μm or more is 1% to 30%.
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公开(公告)号：US10646917B2
公开(公告)日：2020-05-12
申请号：US15120813
申请日：2014-11-28
发明人： Satoru Mori , Eiho Watanabe
IPC分类号： B22D11/00 , B22D11/06 , B22D11/11 , B22D11/14 , B22D7/00 , C22C9/00 , C22C32/00 , B22D11/12 , B22D1/00 , B22D11/108 , B21B1/18 , B22D11/119 , B21B1/46 , B21B3/00
摘要： A copper ingot of the present invention which is casted by a belt-caster type continuous casting apparatus includes: 1 ppm by mass or less of carbon; 10 ppm by mass or less of oxygen; 0.8 ppm by mass or less of hydrogen; 15 ppm by mass to 35 ppm by mass of phosphorus; and a balance of Cu and inevitable impurities, and includes inclusions formed of oxides containing carbon, phosphorus, and Cu.
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公开(公告)号：US10538059B2
公开(公告)日：2020-01-21
申请号：US14247591
申请日：2014-04-08
发明人： Satoru Mori , Sohei Nonaka
摘要： A sputtering target for forming protective film which is used to form a protective film on one surface or both surfaces of a Cu wiring film contains Ni: 5.0 to 15.0% by mass, Mn: 2.0 to 10.0% by mass, Zn: 30.0 to 50.0% by mass, Al: 0.5 to 7.0% by mass, and a remainder composed of Cu and inevitable impurities. A laminated wiring film is provided with a Cu wiring film and the protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by the above-described sputtering target for forming protective film.
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4.发明申请公开(公告)号：US20160361760A1
公开(公告)日：2016-12-15
申请号：US15120813
申请日：2014-11-28
发明人： Satoru Mori , Eiho Watanabe
摘要： A copper ingot of the present invention which is casted by a belt-caster type continuous casting apparatus includes: 1 ppm by mass or less of carbon; 10 ppm by mass or less of oxygen; 0.8 ppm by mass or less of hydrogen; 15 ppm by mass to 35 ppm by mass of phosphorus; and a balance of Cu and inevitable impurities, and includes inclusions formed of oxides containing carbon, phosphorus, and Cu.
摘要翻译： 由带式连铸机铸造的本发明的铜锭包括：1质量ppm以下的碳; 10质量ppm以下的氧气; 0.8质量ppm以下的氢气; 15质量ppm〜35质量ppm的磷; 余量的Cu和不可避免的杂质，并且包括由含有碳，磷和Cu的氧化物形成的夹杂物。
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5.发明申请COPPER ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD OF COPPER ALLOY SPUTTERING TARGET 审中-公开铜合金溅射目标和铜合金喷射目标的制造方法公开(公告)号：US20150034482A1
公开(公告)日：2015-02-05
申请号：US14333812
申请日：2014-07-17
发明人： Satoru Mori , Toshio Sakamoto , Kiyoyuki Ookubo
IPC分类号： H01J37/34 , B22D11/00 , B22D11/108 , C23C14/34 , B22D7/00
CPC分类号： H01J37/3429 , B22D7/005 , B22D11/004 , B22D11/108 , C22C1/02 , C22C9/00 , C22F1/08 , C23C14/3414 , H01J37/3491
摘要： A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting the Ca; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.
摘要翻译： 通过铜合金形成铜合金溅射靶，其中Ca含量为0.3〜1.7质量％，Mg和Al的总含量为5ppm以下，氧含量为20ppm以下 ，其余为Cu和不可避免的杂质。 铜合金溅射靶的制造方法包括以下步骤：制备纯度为99.99质量％以上的铜; 熔化铜以获得熔融铜; 通过向熔融铜中添加纯度为98.5质量％以上的Ca，通过熔融Ca，得到具有规定成分组成的熔融金属， 铸造熔融金属以获得锭; 并且在对所述锭进行热轧之后执行减压退火。
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6.发明申请公开(公告)号：US20140315043A1
公开(公告)日：2014-10-23
申请号：US14247591
申请日：2014-04-08
发明人： Satoru Mori , Sohei Nonaka
摘要： A sputtering target for forming protective film which is used to form a protective film on one surface or both surfaces of a Cu wiring film contains Ni: 5.0 to 15.0% by mass, Mn: 2.0 to 10.0% by mass, Zn: 30.0 to 50.0% by mass, Al: 0.5 to 7.0% by mass, and a remainder composed of Cu and inevitable impurities. A laminated wiring film is provided with a Cu wiring film and the protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by the above-described sputtering target for forming protective film.
摘要翻译： 用于在Cu布线膜的一个表面或两个表面上形成保护膜的保护膜形成用溅射靶含有Ni：5.0〜15.0质量％，Mn：2.0〜10.0质量％，Zn：30.0〜50.0 质量％，Al：0.5〜7.0质量％，余量由Cu和不可避免的杂质构成。 叠层布线膜设置有Cu布线膜和形成在铜布线膜的一个表面或两个表面上的保护膜，并且保护膜由上述用于形成保护膜的溅射靶形成。
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公开(公告)号：US20210010105A1
公开(公告)日：2021-01-14
申请号：US17040654
申请日：2019-10-23
发明人： Satoru Mori , Satoshi Kumagai , U Tani , Yuuji Sato
摘要： A sputtering target material contains one kind or two or more kinds selected from the group consisting of Ag, As, Pb, Sb, Bi, Cd, Sn, Ni, and Fe in a range of 5 massppm or more and 50 massppm or less, in terms of a total content; and a balance consisting of Cu and an inevitable impurity. In the sputtering target material, in a case in which an average crystal grain size calculated as an area average without twins is denoted by X1 (μm), and a maximum intensity of pole figure is denoted by X2, upon an observation with an electron backscatter diffraction method, Expression (1): 2500>19×X1+290×X2 is satisfied, a kernel average misorientation (KAM) of a crystal orientation measured by an electron backscatter diffraction method is 2.0° or less, and a relative density is 95% or more.
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公开(公告)号：US09518320B2
公开(公告)日：2016-12-13
申请号：US14470074
申请日：2014-08-27
发明人： Satoru Mori , Toshio Sakamoto , Kiyoyuki Ookubo
CPC分类号： C23C14/3414 , C22C1/0425 , C22C9/00 , H01J37/3426
摘要： A copper alloy sputtering target is made of a copper alloy having a composition containing Ca in a range of 0.3 mass % to 1.7 mass % with a remainder of Cu and inevitable impurities, a Ca-segregated phase (10) in which Ca is segregated is dispersed in a matrix phase, and the Ca-segregated phase contains a Cu-dispersed phase (11) made of Cu.
摘要翻译： 铜合金溅射靶由Ca合金组成，其中Ca含量为0.3质量％至1.7质量％的Ca，其余为Cu和不可避免的杂质，Ca分离的Ca分离相（10）为 分散在基质相中，Ca分离相含有由Cu构成的Cu分散相（11）。
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公开(公告)号：US20160237551A1
公开(公告)日：2016-08-18
申请号：US15027436
申请日：2013-10-07
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/1007 , B22F2201/01 , B22F2301/10 , B22F2999/00 , C22C1/0425 , C22C9/00 , C23C14/14 , H01J37/3426 , H01J37/3429
摘要： Provided are a sputtering target composed of a Cu—Ga sintered compact that has a further reduced oxygen content and can suppress abnormal discharges, and a method for producing the same. The sintered compact has a component composition containing a Ga content of 20 at % or higher and less than 30 at % with the balance being Cu and inevitable impurities, and has an oxygen content of 100 ppm or lower and an average grain size of 100 μm or less, and exhibits the diffraction peaks assigned to the γ and ζ phases of CuGa as observed in X-ray diffraction, wherein the main peak intensity of the diffraction peaks assigned to the ζ phase is 10% or higher relative to that of the diffraction peaks assigned to the γ phase.
摘要翻译： 提供一种由具有进一步降低的氧含量并能够抑制异常放电的Cu-Ga烧结体组成的溅射靶及其制造方法。 烧结体的组成成分含有Ga含量为20原子％以上且小于30原子％，余量为Cu和不可避免的杂质，氧含量为100ppm以下，平均粒径为100μm 并且表现出在X射线衍射中观察到的分配给CuGa的γ和ζ相的衍射峰，其中分配给ζ相的衍射峰的主峰强度相对于衍射的主峰强度为10％以上 分配给γ相的峰。
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公开(公告)号：US20160208376A1
公开(公告)日：2016-07-21
申请号：US14908346
申请日：2014-07-25
发明人： Yuuki Yoshida , Kouichi Ishiyama , Satoru Mori
CPC分类号： C23C14/3414 , B22F3/16 , B22F5/00 , B22F2201/01 , B22F2301/10 , B22F2302/45 , B22F2303/01 , B22F2303/15 , B22F2304/10 , C22C1/0425 , C22C9/00 , C22C32/00 , C23C14/14 , H01J37/3429
摘要： The present invention provides a sputtering target of a Cu—Ga sintered body in which the oxygen content is further reduced and the abnormal discharging can be suppressed, and a method for producing the same. The sputtering target according to the present invention is a sintered body having: a texture in which Na compound phases are dispersed in a matrix with a γ phase and a ζ phase of a Cu—Ga alloy; and a component composition made of: 20 atomic % to 30 atomic % of Ga; 0.05 atomic % to 10 atomic % of Na; and the Cu balance and inevitable impurities including elements other than Na in the Na compound, wherein an average grain size of the γ phase is 30 μm to 100 μm, and an average grain size of the Na compound phases is equal to or less than 8.5 μm.
摘要翻译： 本发明提供了一种Cu-Ga烧结体的溅射靶，其中氧含量进一步降低并且可以抑制异常放电及其制造方法。 根据本发明的溅射靶是具有Na化合物相分散在具有Cu-Ga合金的γ相和ζ相的基体中的织构的烧结体; 和由20原子％〜30原子％的Ga构成的成分组成; 0.05原子％至10原子％的Na; 在Na化合物中含有除Na以外的元素的Cu余量和不可避免的杂质，γ相的平均粒径为30μm〜100μm，Na化合物相的平均粒径为8.5以下 μm。
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