公开(公告)号：US10017850B2

公开(公告)日：2018-07-10

申请号：US14908346

申请日：2014-07-25

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Yuuki Yoshida ,  Kouichi Ishiyama ,  Satoru Mori

IPC: C23C14/34 ,  C22C9/00 ,  C22C1/04 ,  C22C32/00 ,  B22F3/16 ,  B22F5/00 ,  C23C14/14 ,  H01J37/34

CPC classification number: C23C14/3414 ,  B22F3/16 ,  B22F5/00 ,  B22F2201/01 ,  B22F2301/10 ,  B22F2302/45 ,  B22F2303/01 ,  B22F2303/15 ,  B22F2304/10 ,  C22C1/0425 ,  C22C9/00 ,  C22C32/00 ,  C23C14/14 ,  H01J37/3429

Abstract: The present invention provides a sputtering target of a Cu—Ga sintered body in which the oxygen content is further reduced and the abnormal discharging can be suppressed, and a method for producing the same. The sputtering target according to the present invention is a sintered body having: a texture in which Na compound phases are dispersed in a matrix with a γ phase and a ζ phase of a Cu—Ga alloy; and a component composition made of: 20 atomic % to 30 atomic % of Ga; 0.05 atomic % to 10 atomic % of Na; and the Cu balance and inevitable impurities including elements other than Na in the Na compound, wherein an average grain size of the γ phase is 30 μm to 100 μm, and an average grain size of the Na compound phases is equal to or less than 8.5 μm.

公开(公告)号：US10351946B2

公开(公告)日：2019-07-16

申请号：US15027436

申请日：2013-10-07

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Kazunori Igarashi ,  Muneaki Watanabe ,  Yuuki Yoshida ,  Kouichi Ishiyama ,  Satoru Mori

IPC: C23C14/34 ,  H01J37/34 ,  C22C9/00 ,  B22F3/10 ,  C22C1/04 ,  B22F1/00 ,  C23C14/14

Abstract: Provided are a sputtering target composed of a Cu—Ga sintered compact that has a further reduced oxygen content and can suppress abnormal discharges, and a method for producing the same. The sintered compact has a component composition containing a Ga content of 20 at % or higher and less than 30 at % with the balance being Cu and inevitable impurities, and has an oxygen content of 100 ppm or lower and an average grain size of 100 μm or less, and exhibits the diffraction peaks assigned to the γ and ζ phases of CuGa as observed in X-ray diffraction, wherein the main peak intensity of the diffraction peaks assigned to the ζ phase is 10% or higher relative to that of the diffraction peaks assigned to the γ phase.

公开(公告)号：US09748080B2

公开(公告)日：2017-08-29

申请号：US15113210

申请日：2014-11-18

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Yuuki Yoshida ,  Kouichi Ishiyama ,  Satoru Mori

IPC: C23C14/34 ,  H01J37/34 ,  B22F3/10 ,  C22C9/00 ,  B22F1/00 ,  C22C1/04 ,  B22F3/24 ,  H01L31/0749

CPC classification number: H01J37/3429 ,  B22F1/0003 ,  B22F1/0011 ,  B22F3/10 ,  B22F3/24 ,  B22F2201/01 ,  B22F2302/45 ,  B22F2998/10 ,  C22C1/0425 ,  C22C1/0491 ,  C22C9/00 ,  C23C14/3414 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: According to the present invention, a Cu—Ga alloy sputtering target which is a sintered body has a composition with 29.5 atom % to 43.0 atom % of Ga and a balance of Cu and inevitable impurities. A Cu—Ga alloy crystal particle in the sintered body has a structure in which γ phase particles are dispersed in a γ1-phase crystal particle. A method for producing the sputtering target includes a step of performing normal pressure sintering by heating a molded body formed of a powder mixture of a pure Cu powder and a Cu—Ga alloy powder in a reducing atmosphere, and a step of cooling the obtained sintered body at a cooling rate of 0.1° C./min to 1.0° C./min, at a temperature having a range of 450° C. to 650° C.

公开(公告)号：US20170011895A1

公开(公告)日：2017-01-12

申请号：US15113210

申请日：2014-11-18

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Yuuki Yoshida ,  Kouichi Ishiyama ,  Satoru Mori

IPC: H01J37/34 ,  B22F3/24 ,  B22F3/10 ,  C23C14/34 ,  B22F1/00

CPC classification number: H01J37/3429 ,  B22F1/0003 ,  B22F1/0011 ,  B22F3/10 ,  B22F3/24 ,  B22F2201/01 ,  B22F2302/45 ,  B22F2998/10 ,  C22C1/0425 ,  C22C1/0491 ,  C22C9/00 ,  C23C14/3414 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: According to the present invention, a Cu—Ga alloy sputtering target which is a sintered body has a composition with 29.5 atom % to 43.0 atom % of Ga and a balance of Cu and inevitable impurities. A Cu—Ga alloy crystal particle in the sintered body has a structure in which γ phase particles are dispersed in a γ1-phase crystal particle. A method for producing the sputtering target includes a step of performing normal pressure sintering by heating a molded body formed of a powder mixture of a pure Cu powder and a Cu—Ga alloy powder in a reducing atmosphere, and a step of cooling the obtained sintered body at a cooling rate of 0.1° C./min to 1.0° C./min, at a temperature having a range of 450° C. to 650° C.

Abstract translation: 根据本发明，作为烧结体的Cu-Ga合金溅射靶具有29.5原子％至43.0原子％的Ga和余量的Cu和不可避免的杂质的组成。 烧结体中的Cu-Ga合金结晶粒子具有γ相粒子分散在γ1相晶体中的结构。 溅射靶的制造方法包括在还原气氛中加热由纯Cu粉末和Cu-Ga合金粉末的粉末混合物形成的成型体进行常压烧结的工序，以及将得到的烧结体 身体以0.1℃/分钟至1.0℃/分钟的冷却速度，在450℃至650℃的温度下进行。

公开(公告)号：US20160237551A1

公开(公告)日：2016-08-18

申请号：US15027436

申请日：2013-10-07

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Kazunori Igarashi ,  Muneaki Watanabe ,  Yuuki Yoshida ,  Kouichi Ishiyama ,  Satoru Mori

IPC: C23C14/34 ,  H01J37/34 ,  B22F1/00 ,  B22F3/10 ,  C23C14/14 ,  C22C9/00

CPC classification number: C23C14/3414 ,  B22F1/0003 ,  B22F3/1007 ,  B22F2201/01 ,  B22F2301/10 ,  B22F2999/00 ,  C22C1/0425 ,  C22C9/00 ,  C23C14/14 ,  H01J37/3426 ,  H01J37/3429

Abstract: Provided are a sputtering target composed of a Cu—Ga sintered compact that has a further reduced oxygen content and can suppress abnormal discharges, and a method for producing the same. The sintered compact has a component composition containing a Ga content of 20 at % or higher and less than 30 at % with the balance being Cu and inevitable impurities, and has an oxygen content of 100 ppm or lower and an average grain size of 100 μm or less, and exhibits the diffraction peaks assigned to the γ and ζ phases of CuGa as observed in X-ray diffraction, wherein the main peak intensity of the diffraction peaks assigned to the ζ phase is 10% or higher relative to that of the diffraction peaks assigned to the γ phase.

Abstract translation: 提供一种由具有进一步降低的氧含量并能够抑制异常放电的Cu-Ga烧结体组成的溅射靶及其制造方法。 烧结体的组成成分含有Ga含量为20原子％以上且小于30原子％，余量为Cu和不可避免的杂质，氧含量为100ppm以下，平均粒径为100μm 并且表现出在X射线衍射中观察到的分配给CuGa的γ和ζ相的衍射峰，其中分配给ζ相的衍射峰的主峰强度相对于衍射的主峰强度为10％以上 分配给γ相的峰。

公开(公告)号：US20160208376A1

公开(公告)日：2016-07-21

申请号：US14908346

申请日：2014-07-25

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Yuuki Yoshida ,  Kouichi Ishiyama ,  Satoru Mori

IPC: C23C14/34 ,  C22C9/00 ,  C23C14/14 ,  H01J37/34 ,  B22F3/16 ,  B22F5/00

CPC classification number: C23C14/3414 ,  B22F3/16 ,  B22F5/00 ,  B22F2201/01 ,  B22F2301/10 ,  B22F2302/45 ,  B22F2303/01 ,  B22F2303/15 ,  B22F2304/10 ,  C22C1/0425 ,  C22C9/00 ,  C22C32/00 ,  C23C14/14 ,  H01J37/3429

Abstract: The present invention provides a sputtering target of a Cu—Ga sintered body in which the oxygen content is further reduced and the abnormal discharging can be suppressed, and a method for producing the same. The sputtering target according to the present invention is a sintered body having: a texture in which Na compound phases are dispersed in a matrix with a γ phase and a ζ phase of a Cu—Ga alloy; and a component composition made of: 20 atomic % to 30 atomic % of Ga; 0.05 atomic % to 10 atomic % of Na; and the Cu balance and inevitable impurities including elements other than Na in the Na compound, wherein an average grain size of the γ phase is 30 μm to 100 μm, and an average grain size of the Na compound phases is equal to or less than 8.5 μm.

Abstract translation: 本发明提供了一种Cu-Ga烧结体的溅射靶，其中氧含量进一步降低并且可以抑制异常放电及其制造方法。 根据本发明的溅射靶是具有Na化合物相分散在具有Cu-Ga合金的γ相和ζ相的基体中的织构的烧结体; 和由20原子％〜30原子％的Ga构成的成分组成; 0.05原子％至10原子％的Na; 在Na化合物中含有除Na以外的元素的Cu余量和不可避免的杂质，γ相的平均粒径为30μm〜100μm，Na化合物相的平均粒径为8.5以下 μm。