公开(公告)号：US12116320B2

公开(公告)日：2024-10-15

申请号：US17436238

申请日：2020-03-05

Applicant: KURARAY NORITAKE DENTAL INC.

Inventor： Yasutaka Kudo

IPC: C04B35/488 ,  C04B35/64 ,  C09K11/02

CPC classification number: C04B35/488 ,  C04B35/64 ,  C09K11/02 ,  C04B2235/3246 ,  C04B2235/5454 ,  C04B2235/656 ,  C04B2235/661 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/765 ,  C04B2235/96 ,  C04B2235/9646 ,  C04B2235/9653 ,  C04B2235/9661

Abstract: A zirconia sintered body may excel in translucency, strength, and linear light transmittance with no use of an HIP device, and a zirconia molded body and a zirconia pre-sintered body from which such a zirconia sintered body can be obtained. A zirconia molded body may include zirconia particles with 2.0 to 9.0 mol % yttria, an average primary particle diameter of 60 nm or less, and 0.5 mass % or less zirconia particles having a particle diameter >100 nm, wherein the zirconia molded body has ΔL*(W−B) of 5+ through a thickness of 1.5 mm. A zirconia pre-sintered body may include 2.0 to 9.0 mol % yttria, and have a ΔL*(W−B) of 5+ through a thickness of 1.5 mm. A zirconia sintered body may include: a fluorescent agent; 2.0 to 9.0 mol % yttria, and have a linear light transmittance of 1% or more through a thickness of 1.0 mm.

公开(公告)号：US20240287705A1

公开(公告)日：2024-08-29

申请号：US18655053

申请日：2024-05-03

Applicant: II-VI ADVANCED MATERIALS, LLC

Inventor： Ilya Zwieback ,  Varatharajan Rengarajan ,  Andrew E. Souzis ,  Gary E. Ruland

IPC: C30B23/02 ,  C01B32/956 ,  C04B35/573 ,  C04B35/65 ,  C30B29/36 ,  G02F1/00 ,  H01L29/36

CPC classification number: C30B23/02 ,  C01B32/956 ,  C04B35/573 ,  C04B35/65 ,  C30B29/36 ,  C04B2235/3205 ,  C04B2235/3826 ,  C04B2235/3839 ,  C04B2235/425 ,  C04B2235/722 ,  C04B2235/76 ,  C04B2235/9661 ,  G02F1/0063 ,  H01L29/36

Abstract: The present disclosure generally relates to a physical vapor transport system including a chamber, a growth crucible positioned within the chamber, the growth crucible sealable with a growth crucible lid, and a doping capsule positioned within the growth crucible. The doping capsule includes an outer crucible fitted with an outer crucible lid, an inner crucible fitted with an inner crucible lid, the inner crucible fitted with the inner crucible lid positioned within the outer crucible, and a capillary channel formed by a first aperture in the outer crucible lid and a second aperture in the inner crucible lid.

公开(公告)号：US20240270652A1

公开(公告)日：2024-08-15

申请号：US18108929

申请日：2023-02-13

Applicant: Raytheon Technologies Corporation

Inventor： John E. Holowczak

IPC: C04B35/622 ,  C04B35/628 ,  C04B41/45 ,  C23C16/455

CPC classification number: C04B35/62281 ,  C04B35/62868 ,  C04B35/62876 ,  C04B41/4578 ,  C23C16/45525 ,  C04B2235/386 ,  C04B2235/408 ,  C04B2235/5244 ,  C04B2235/614 ,  C04B2235/76

Abstract: A method of forming a ceramic matrix composite includes arranging a plurality of fibers into a preform, each of the plurality of fibers being formed from silicon carbide, depositing a nucleating layer on the plurality of fibers, the nucleating layer comprising a crystalline material having an a-lattice constant and a c-lattice constant, and depositing a boron nitride layer on the nucleating layer. The c-lattice constant of the crystalline material of the nucleating layer corresponds to an a-lattice constant of the silicon carbide, such that the c-lattice constant of the crystalline material is within 3.0% of the a-lattice constant of the silicon carbide.

公开(公告)号：US12060650B2

公开(公告)日：2024-08-13

申请号：US17249395

申请日：2021-03-01

Applicant: II-VI Delaware, Inc

Inventor： Ilya Zwieback ,  Varatharajan Rengarajan ,  Andrew E. Souzis ,  Gary Ruland

IPC: C30B23/02 ,  C01B32/956 ,  C04B35/573 ,  C04B35/65 ,  C30B29/36 ,  G02F1/00 ,  H01L29/36

CPC classification number: C30B23/02 ,  C01B32/956 ,  C04B35/573 ,  C04B35/65 ,  C30B29/36 ,  C04B2235/3205 ,  C04B2235/3826 ,  C04B2235/3839 ,  C04B2235/425 ,  C04B2235/722 ,  C04B2235/76 ,  C04B2235/9661 ,  G02F1/0063 ,  H01L29/36

Abstract: An optical device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype, for transmitting light having a wavelength in a range of from 420 nm to 4.5 μm. The device may include a window, lens, prism, or waveguide. A system includes a source for generating light having a wavelength in a range of from 420 nm to 4.5 μm, and a device for receiving and transmitting the light, where the device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype. The disclosure also relates to crystals and methods for optical applications, including an aluminum doped SiC crystal having residual nitrogen and boron impurities, where the aluminum concentration is greater than the combined concentrations of nitrogen and boron, and where an optical absorption coefficient is less than about 0.4 cm−1 at a wavelength between about 400 nm to about 800 nm.

公开(公告)号：US20240254616A1

公开(公告)日：2024-08-01

申请号：US18633854

申请日：2024-04-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Hitomi SATO ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Takashi SHIMAZU

IPC: C23C14/34 ,  B28B11/24 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: C23C14/3414 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  C23C14/086 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US11834378B2

公开(公告)日：2023-12-05

申请号：US17649950

申请日：2022-02-04

Applicant: NGK INSULATORS, LTD.

Inventor： Kyohei Atsuji ,  Shinji Suzuki ,  Shinpei Oshima ,  Takahiro Tomita

IPC: B01J21/06 ,  B01J21/12 ,  B01J21/16 ,  B01J35/00 ,  B01J35/04 ,  B01J35/10 ,  C04B35/185 ,  C04B35/195 ,  C04B38/00

CPC classification number: C04B35/185 ,  B01J21/06 ,  B01J35/0026 ,  B01J35/04 ,  B01J35/1076 ,  C04B35/195 ,  C04B38/0006 ,  C04B38/0054 ,  C04B2235/3222 ,  C04B2235/76

Abstract: A composite sintered body contains a silicon phase which is a main phase, a cordierite phase, and an amorphous phase containing Si. Further, the volume resistivity thereof at a room temperature is not lower than 0.1 Ω·cm and not higher than 2.5 Ω·cm.

公开(公告)号：US20230212021A1

公开(公告)日：2023-07-06

申请号：US18001087

申请日：2021-06-22

Applicant: TOKYO INSTITUTE OF TECHNOLOGY ,  NGK SPARK PLUG CO., LTD.

Inventor： Akira NAKAJIMA ,  Takumi MATSUMOTO ,  Mao SHOJI ,  Hisashi KOZUKA

IPC: C01F17/32 ,  A01P1/00 ,  C04B35/50

CPC classification number: C01F17/32 ,  A01P1/00 ,  C04B35/50 ,  C01P2002/74 ,  C01P2006/90 ,  C04B2235/3227 ,  C04B2235/3256 ,  C04B2235/76

Abstract: A lanthanum molybdenum composite oxide is provided. The lanthanum molybdenum composite oxide has a primary crystal phase formed of La2Mo2O9. The lanthanum molybdenum composite oxide also has a secondary crystal phase formed of a lanthanum molybdenum composite oxide species other than La2Mo2O9. The secondary crystal phase may contain at least one species selected from a group consisting of La2Mo3O12, La6MoO12, La7Mo7O30, La2Mo4O15, La2MoO6, La4MoO9, and LaMo2O5.

公开(公告)号：US11657970B2

公开(公告)日：2023-05-23

申请号：US17233280

申请日：2021-04-16

Applicant: TAIYO YUDEN CO., LTD.

Inventor： Yuta Saito ,  Tomoya Hagiwara

IPC: H01G4/30 ,  H01G4/12 ,  H01G4/008 ,  C04B35/468 ,  H01G4/012

CPC classification number: H01G4/1227 ,  C04B35/4682 ,  H01G4/008 ,  H01G4/012 ,  H01G4/30 ,  C04B2235/3224 ,  C04B2235/3267 ,  C04B2235/3418 ,  C04B2235/76

Abstract: A dielectric substance includes a core-shell grain having a twin crystal structure. An interface of the twin crystal structure of the core-shell grain extends from a shell on one side, passes through a core, and extends to the shell on the other side.

公开(公告)号：US20190237257A1

公开(公告)日：2019-08-01

申请号：US16253974

申请日：2019-01-22

Applicant: TDK CORPORATION

Inventor： Kosuke TAKANO ,  Momoyo SASAKI ,  Toshihiko KANEKO

IPC: H01G4/12 ,  C04B35/49 ,  H01G4/30 ,  H01G4/008

CPC classification number: H01G4/1245 ,  C01G23/006 ,  C01G25/006 ,  C01P2002/72 ,  C04B35/462 ,  C04B35/4682 ,  C04B35/49 ,  C04B35/638 ,  C04B35/64 ,  C04B2235/3205 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3248 ,  C04B2235/3262 ,  C04B2235/327 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/662 ,  C04B2235/76 ,  C04B2235/761 ,  C04B2235/768 ,  C04B2235/79 ,  H01G4/008 ,  H01G4/1218 ,  H01G4/1227 ,  H01G4/1236 ,  H01G4/30

Abstract: A dielectric ceramic composition includes a main component of a perovskite type compound represented by a general formula of ABO3, in which A is an element in an A-site, B is an element in a B-site, and O is an oxygen element. A includes Ba. B includes Ti and Zr. A sintered-body lattice volume obtained by X-ray diffraction method is 64.50 Å3 or above.

公开(公告)号：US20190106622A1

公开(公告)日：2019-04-11

申请号：US16204231

申请日：2018-11-29

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Satoshi Kuretake

IPC: C09K11/77 ,  H01L33/48 ,  H01L33/50 ,  H01L33/60

CPC classification number: C09K11/7769 ,  C04B35/457 ,  C04B35/486 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3244 ,  C04B2235/3298 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/664 ,  C04B2235/76 ,  C04B2235/9653 ,  C09K11/7701 ,  C09K11/7703 ,  H01L33/486 ,  H01L33/502 ,  H01L33/507 ,  H01L33/60

Abstract: A light-emitting ceramic that includes a pyrochlore type compound that contains 0.01 mol % or more of Bi with respect to 100 mol % of ABOW, and one co-added element selected from the group consisting of Mg, Ca, Zn, Sr, Ba, Sc, Ga, In, Yb, and Lu. The A site contains at least one selected from the group consisting of La, Y, and Gd in a total amount of 80 mol % or more, B contains at least Sn, and W is a positive number for maintaining electrical neutrality.