公开(公告)号：US20230378243A1

公开(公告)日：2023-11-23

申请号：US18230137

申请日：2023-08-03

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

Inventor： Akira ISHIGURO ,  Ryohei NEGA ,  Yoshihiko FUJI

IPC: H10B12/00 ,  H01L23/00 ,  H01L27/02 ,  H01L23/522

CPC classification number: H01L28/10 ,  H01L24/06 ,  H01L27/0288 ,  H01L23/5226

Abstract: An isolator includes a first electrode; a first insulating portion on the first electrode; a second electrode on the first insulating portion; a second insulating portion around the second electrode; and a first dielectric portion on the second electrode and the second insulating portion. The second insulating portion is provided along a first plane perpendicular to a first direction from the first electrode toward the second electrode. The second electrode including a bottom surface facing the first insulating portion, an upper surface facing the first dielectric portion, a first side surface connected to the bottom surface, and a second side surface connected to the upper surface and the first side surface. The upper surface is wider than the bottom surface in a second direction along the first plane. The first side surface is tilted with respect to the bottom surface and the second side surface.

公开(公告)号：US20230086597A1

公开(公告)日：2023-03-23

申请号：US17814702

申请日：2022-07-25

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor： Satoshi AKUTSU ,  Kazuyuki ITO ,  Takuo KIKUCHI ,  Nobuaki MAKINO ,  Tatsuya OHGURO ,  Yoshihiko FUJI

IPC: H01F27/32 ,  H01F27/28 ,  H01F38/14

Abstract: An insulating device includes a first element, a second element, a first lead, a second lead, and a resin member. The second element is electrically connected to the first element. The first element is mounted on the first lead. The second lead includes a first surface and a second surface, the second surface being at a side opposite to the first surface. The second element is mounted to the first surface. the second lead is arranged to overlap the first element in a direction crossing the second surface of the second lead. The resin member seals the first element, the second element, the first lead, and the second lead.

公开(公告)号：US20180076385A1

公开(公告)日：2018-03-15

申请号：US15805389

申请日：2017-11-07

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yoshihiko FUJI ,  Hideaki Fukuzawa ,  Shiori Kaji

IPC: H01L43/12 ,  G01L1/12 ,  G01L9/16 ,  G01L9/00 ,  C23C16/458 ,  G03F7/20 ,  H01L21/67 ,  H01L21/687 ,  C23C14/50 ,  H01L21/683

CPC classification number: H01L43/12 ,  C23C14/50 ,  C23C16/458 ,  G01L1/125 ,  G01L9/0042 ,  G01L9/16 ,  G03F7/707 ,  H01L21/67288 ,  H01L21/6838 ,  H01L21/68728 ,  H01L21/68742 ,  H01L21/6875

Abstract: A method of manufacturing a pressure sensor comprises: above a film portion formed on one surface of a substrate, depositing a first magnetic layer, a second magnetic layer and an intermediate layer between the first and second magnetic layers on one surface of a substrate; removing the deposited layers leaving a part thereof; and removing a part of the substrate from another surface of the substrate. By removing the deposited layers leaving apart thereof, a strain detecting element is formed in a part of a first region, the strain detecting element comprising the first magnetic layer, the second magnetic layer and the intermediate layer. By removing a part of the substrate, a part of the first region of the substrate is removed. In addition, the deposition of the first magnetic layer is performed with the substrate being bended.

公开(公告)号：US20170356810A1

公开(公告)日：2017-12-14

申请号：US15671592

申请日：2017-08-08

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hideaki FUKUZAWA ,  Akihiko ENAMITO ,  Osamu NISHIMURA ,  Michiko HARA ,  Hiromi YUASA ,  Yoshihiko FUJI ,  Masayuki KII ,  Eizo FUJISAWA

IPC: G01L1/12 ,  G01L9/16 ,  G01L9/00

CPC classification number: G01L1/12 ,  G01L1/125 ,  G01L9/005 ,  G01L9/008 ,  G01L9/16

Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

公开(公告)号：US20160282101A1

公开(公告)日：2016-09-29

申请号：US14887749

申请日：2015-10-20

Applicant: Kabushiki Kaisha Toshiba

Inventor： Shiori KAJI ,  Hideaki FUKUZAWA ,  Tomohiko NAGATA ,  Akio HORI ,  Yoshihiko FUJI

IPC: G01B7/24 ,  G01L9/00

CPC classification number: G01B7/24 ,  G01B7/18 ,  G01L9/0042 ,  G01L9/16

Abstract: According to one embodiment, a strain sensing element includes a film unit being deformable, a first and a second magnetic unit, and a strain sensor. The first magnetic unit is provided on the film unit and is arranged with the film unit in a first direction. The first magnetic unit includes a first magnetic body layer and a first intermediate magnetic layer. The second magnetic unit is provided on the film unit and is arranged with the first magnetic unit in a second direction crossing the first direction. The second magnetic unit includes a second magnetic body layer and a second intermediate magnetic layer. The strain sensor is provided on the film unit between the first magnetic unit and the second magnetic unit. An electrical characteristic of the strain sensor changes according to a deformation of the film unit.

Abstract translation: 根据一个实施例，应变传感元件包括可变形的膜单元，第一和第二磁性单元以及应变传感器。 第一磁性单元设置在胶片单元上，并且将胶片单元布置在第一方向上。 第一磁性单元包括第一磁性体层和第一中间磁性层。 第二磁性单元设置在胶片单元上，并且与第一磁性单元布置在与第一方向交叉的第二方向上。 第二磁性单元包括第二磁性体层和第二中间磁性层。 应变传感器设置在第一磁性单元和第二磁性单元之间的胶片单元上。 应变传感器的电特性根据胶片单元的变形而变化。

公开(公告)号：US20150268116A1

公开(公告)日：2015-09-24

申请号：US14661164

申请日：2015-03-18

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihiko FUJI ,  Hideaki Fukuzawa ,  Shiori Kaji

IPC: G01L9/06 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/12 ,  C23C14/50 ,  C23C16/458 ,  G01L1/125 ,  G01L9/0042 ,  G01L9/16 ,  G03F7/707 ,  H01L21/67288 ,  H01L21/6838 ,  H01L21/68728 ,  H01L21/68742 ,  H01L21/6875

Abstract: A method of manufacturing a pressure sensor comprises: above a film portion formed on one surface of a substrate, depositing a first magnetic layer, a second magnetic layer and an intermediate layer between the first and second magnetic layers on one surface of a substrate; removing the deposited layers leaving a part thereof; and removing a part of the substrate from another surface of the substrate. By removing the deposited layers leaving a part thereof, a strain detecting element is formed in a part of a first region, the strain detecting element comprising the first magnetic layer, the second magnetic layer and the intermediate layer. By removing a part of the substrate, a part of the first region of the substrate is removed. In addition, the deposition of the first magnetic layer is performed with the substrate being bended.

Abstract translation: 制造压力传感器的方法包括：在形成在基板的一个表面上的膜部分上方，在基板的一个表面上在第一和第二磁性层之间沉积第一磁性层，第二磁性层和中间层; 去除留下其一部分的沉积层; 以及从所述衬底的另一表面去除所述衬底的一部分。 通过去除留下其一部分的沉积层，应变检测元件形成在第一区域的一部分中，应变检测元件包括第一磁性层，第二磁性层和中间层。 通过去除衬底的一部分，去除衬底的第一区域的一部分。 此外，第一磁性层的沉积是在衬底被弯曲的情况下进行的。

公开(公告)号：US20150268105A1

公开(公告)日：2015-09-24

申请号：US14662857

申请日：2015-03-19

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihiko FUJI ,  Hideaki Fukuzawa ,  Yoshihiro Higashi ,  Shiori Kaji

IPC: G01L1/12 ,  G01L1/22

CPC classification number: G01L9/16 ,  G01L1/122

Abstract: According to one embodiment, the pressure sensor includes a supporting portion, a film portion, and a strain detecting element. The film portion is supported by the supporting portion. The strain detecting element is disposed on a part of the film portion. The strain detecting element includes a first magnetic layer, a second magnetic layer, and an intermediate layer. A magnetization direction of the first magnetic layer is variable according to a deformation of the film portion. The first magnetic layer has a first facing surface. The second magnetic layer has a second facing surface. The second facing surface faces the first facing surface. The intermediate layer is disposed between the first magnetic layer and the second magnetic layer. An area of the first facing surface is larger than an area of the second facing surface.

Abstract translation: 根据一个实施例，压力传感器包括支撑部分，膜部分和应变检测元件。 胶片部分由支撑部分支撑。 应变检测元件设置在膜部分的一部分上。 应变检测元件包括第一磁性层，第二磁性层和中间层。 第一磁性层的磁化方向根据膜部的变形而变化。 第一磁性层具有第一面对表面。 第二磁性层具有第二相对表面。 第二面向表面面向第一面向表面。 中间层设置在第一磁性层和第二磁性层之间。 第一面对面的面积大于第二面对面的面积。

公开(公告)号：US20150082900A1

公开(公告)日：2015-03-26

申请号：US14471252

申请日：2014-08-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihiko FUJI ,  Hideaki FUKUZAWA ,  Shiori KAJI

IPC: G01L1/12

CPC classification number: G01L1/125 ,  G01L9/007 ,  H04R2201/003 ,  H04R2499/11

Abstract: According to one embodiment, a strain sensing element to be provided on a deformable substrate, the element includes: a reference layer; a magnetization free layer; and a spacer layer. Magnetization of the magnetization free layer changes in accordance with deformation of the substrate. The spacer layer is provided between the reference layer and the magnetization free layer. The magnetization free layer has: a first magnetic layer; a second magnetic layer; and a magnetic coupling layer. The first magnetic layer is provided in contact with the spacer layer. The second magnetic layer is provided to be separated from the first magnetic layer. The magnetic coupling layer is provided between the first magnetic layer and the second magnetic layer. Magnetization of the first magnetic layer is anti-parallel to magnetization of the second magnetic layer.

Abstract translation: 根据一个实施例，应变传感元件设置在可变形衬底上，该元件包括：参考层; 无磁化层; 和间隔层。 磁化自由层的磁化根据基板的变形而变化。 间隔层设置在参考层和无磁化层之间。 磁化自由层具有：第一磁性层; 第二磁性层; 和磁耦合层。 第一磁性层设置成与间隔层接触。 第二磁性层设置成与第一磁性层分离。 磁耦合层设置在第一磁性层和第二磁性层之间。 第一磁性层的磁化与第二磁性层的磁化反平行。

公开(公告)号：US20130128391A1

公开(公告)日：2013-05-23

申请号：US13740983

申请日：2013-01-14

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TDK CORPORATION

Inventor： Yoshihiko FUJI ,  Hideaki FUKUZAWA ,  Hiromi YUASA ,  Kunliang ZHANG ,  Min LI ,  Michiko HARA ,  Yoshinari KUROSAKI

IPC: G11B5/39

CPC classification number: G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/08 ,  Y10S977/943

Abstract: A magneto-resistance effect element, including: a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer; a thin film layer which is located in a side opposite to the spacer layer relative to the free magnetization layer; and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al which is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.

Abstract translation: 一种磁电阻效应元件，包括：固定磁化层，其一个方向上的磁化基本固定; 自由磁化层，其磁化根据外部磁场而旋转并与固定磁化层相对形成; 间隔层，其包括具有绝缘层的电流限制层和导体，以使电流在其厚度方向上穿过绝缘层并位于固定磁化层和自由磁化层之间; 薄膜层，相对于自由磁化层位于与间隔层相反的一侧; 以及功能层，其含有选自由固定磁化层，自由磁化层和薄膜层中的至少一个中形成的Si，Mg，B，Al中的至少一种元素。

公开(公告)号：US20250029772A1

公开(公告)日：2025-01-23

申请号：US18910267

申请日：2024-10-09

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

Inventor： Ryohei NEGA ,  Yoshihiko FUJI ,  Tatsuya OHGURO ,  Takanobu KAMAKURA

IPC: H01F27/28 ,  H01F27/36 ,  H04L25/02 ,  H05K1/02

Abstract: An isolator includes a substrate; a first planar coil provided above the substrate and along a surface of the substrate; a first insulating portion on the first planar coil; a second planar coil on the first insulating portion; and a metal layer above the first insulating portion. The first planar coil, the second planar coil, and the metal layer are arranged in a first direction perpendicular to the surface of the substrate. The first planar coil and the second planar coil each having a center and an outer perimeter in a second direction along the surface of the substrate. A distance in the second direction from the center of the first planar coil to the outer perimeter of the first planar coil is less than a distance in the second direction from the center of the second planar coil to the outer perimeter of the second planar coil.