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    Magnetoresistive effect oscillator
    5.
    发明授权
    Magnetoresistive effect oscillator 有权

    公开(公告)号：US09762182B2

    公开(公告)日：2017-09-12

    申请号：US15098617

    申请日：2016-04-14

    Applicant: TDK CORPORATION

    Inventor： Tsuyoshi Suzuki ,  Eiji Suzuki

    IPC: H03B15/00 ,  H03B5/12 ,  H01F10/26 ,  H01F10/32

    CPC classification number: H03B15/006 ,  H01F10/26 ,  H01F10/324 ,  H01F10/3286 ,  H03B5/1206 ,  H03B15/00

    Abstract: A magnetoresistive effect oscillator executes a first step of applying a current, which has a first current density larger than a critical current density JO for oscillation, to a magnetoresistive effect element for a time TP, and then executes a second step of applying a current, which has a second current density JS smaller than the first current density and not smaller than the critical current density JO for oscillation, to the magnetoresistive effect element. The following formulae (1), (2) and (3), or the following formulae (1) and (4) are satisfied on an assumption that an average value of the first current density during the time TP in the first step is JP, a critical current density for magnetization reversal of the magnetoresistive effect element is JR, and a magnetization reversal time of the magnetoresistive effect element is TR: 0.1 × T R ⁡ ( J R - J O ) J p - J S

    Soft magnetic under layer
    8.
    发明授权
    Soft magnetic under layer 有权
    软磁下层

    公开(公告)号：US09064519B2

    公开(公告)日：2015-06-23

    申请号：US13816789

    申请日：2012-07-05

    Applicant: Jun Fukuoka ,  Kazuya Saitoh

    Inventor： Jun Fukuoka ,  Kazuya Saitoh

    IPC: G11B5/667 ,  H01F10/32

    CPC classification number: G11B5/667 ,  H01F10/324

    Abstract: A soft magnetic under layer has a low antiferromagnetic coupling force and a high saturation magnetic flux density. The soft magnetic under layer includes two soft magnetic layers and a spacer layer. The soft magnetic layers are expressed by a composition formula as (Fe100-XCoX)100-Y-MY by atomic ratio, wherein 15≦X≦30, 10≦Y≦30, and an element M is at least one element selected from a group of Ta, Ti, Zr, Nb, Cr, and B; are composed of residual incidental impurities; and each have a thickness of 10 to 50 nm. The spacer layer is composed of one element selected from a group of Ru, Cr, Cu, Re, and Rh and has a thickness of 0.10 to 0.50 nm. The soft magnetic layers are antiferromagnetically coupled through the spacer layer inserted therebetween. An antiferromagnetic coupling force between the soft magnetic layers is 100 to 4,000 A/m.

    Abstract translation: 软磁下层具有低反铁磁耦合力和高饱和磁通密度。 软磁下层包括两个软磁层和间隔层。 软磁性层由以原子比计的（Fe100-XCoX）100-Y-MY的组成式表示，其中15＆lt; NlE; X＆lt; NE; 30,10＆amp; Y; ​​Y＆nlE; 30，元素M为选自 Ta，Ti，Zr，Nb，Cr和B组; 由残留杂质组成; 并且各自具有10至50nm的厚度。 间隔层由选自Ru，Cr，Cu，Re和Rh中的一种元素组成，并且具有0.10至0.50nm的厚度。 软磁性层通过插入其间的间隔层进行反铁磁耦合。 软磁层之间的反铁磁耦合力为100〜4000A / m。

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