An embodiment relates to a magnetic sensor device, comprising a magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to spontaneously generate a closed flux magnetization pattern in the magnetic free layer. The magneto-resistive structure also comprises a magnetic reference layer having a non-closed flux reference magnetization pattern. The magnetic sensor device further comprises a magnetic biasing structure configured to generate a biasing field in the magnetic free layer, the biasing field having a non-zero magnetic biasing field component perpendicular to the reference magnetization pattern.