Invention Grant
- Patent Title: Self-pinned spin valve magnetoresistance effect film and magnetic sensor using the same, and rotation angle detection device
- Patent Title (中): 自锁自旋阀磁阻效应膜和磁传感器采用相同的旋转角度检测装置
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Application No.: US13057076Application Date: 2009-08-10
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Publication No.: US09007055B2Publication Date: 2015-04-14
- Inventor: Tomoki Ono , Yasunori Abe , Fumio Shirasaki
- Applicant: Tomoki Ono , Yasunori Abe , Fumio Shirasaki
- Applicant Address: JP Tokyo
- Assignee: Hitachi Metals, Ltd.
- Current Assignee: Hitachi Metals, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2008-235477 20080912
- International Application: PCT/JP2009/003833 WO 20090810
- International Announcement: WO2010/029684 WO 20100318
- Main IPC: G01B7/30
- IPC: G01B7/30 ; G01R33/09 ; B82Y25/00 ; H01F10/32 ; H01L43/08

Abstract:
Provided are a self-pinned spin valve magnetoresistance effect film, a magnetic sensor using the same, and a rotation angle detection device. The self-pinned spin valve magnetoresistance effect film has a strong coupling magnetic field in a pinned layer, a small reduction in the change in resistance, and superior resistance to magnetic fields without reducing the coercive force in a first ferromagnetic layer, which is a pinned layer in the film, even when exposed to a strong external magnetic field. By inserting a non-magnetic layer between a ground layer and a pinned layer to form the spin valve magnetoresistance effect film, the self-pinned spin valve magnetoresistance effect film having superior resistance to magnetic fields, a magnetic sensor using the same, and a rotation angle detection device are obtained.
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