公开(公告)号：US11753741B2

公开(公告)日：2023-09-12

申请号：US17199645

申请日：2021-03-12

Applicant: GlobalWafers Co., Ltd.

Inventor： Zheng Lu ,  Gaurab Samanta ,  Tse-Wei Lu ,  Feng-Chien Tsai

IPC: C30B29/02 ,  C30B33/02 ,  C30B29/06 ,  H01L21/02 ,  H01L21/00 ,  C30B15/20

CPC classification number: C30B33/02 ,  C30B15/203 ,  C30B15/206 ,  C30B29/06 ,  H01L21/00 ,  H01L21/0262 ,  H01L21/02381 ,  H01L21/02532

Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

公开(公告)号：US11136691B2

公开(公告)日：2021-10-05

申请号：US16916577

申请日：2020-06-30

Applicant: GlobalWafers Co., Ltd.

Inventor： Gaurab Samanta ,  Parthiv Daggolu ,  Sumeet Bhagavat ,  Soubir Basak ,  Nan Zhang

IPC: C30B15/20 ,  C30B29/06 ,  C30B15/30 ,  C30B15/10 ,  C30B30/04

Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

公开(公告)号：US20210198805A1

公开(公告)日：2021-07-01

申请号：US17199645

申请日：2021-03-12

Applicant: GlobalWafers Co., Ltd.

Inventor： Zheng Lu ,  Gaurab Samanta ,  Tse-Wei Lu ,  Feng-Chien Tsai

IPC: C30B33/02 ,  C30B29/06 ,  H01L21/02 ,  H01L21/00 ,  C30B15/20

Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

公开(公告)号：US20240247402A1

公开(公告)日：2024-07-25

申请号：US18626962

申请日：2024-04-04

Applicant: GlobalWafers Co., Ltd.

Inventor： Gaurab Samanta ,  Parthiv Daggolu ,  Sumeet Bhagavat ,  Soubir Basak ,  Nan Zhang

IPC: C30B15/20 ,  C30B15/10 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04

CPC classification number: C30B15/20 ,  C30B15/10 ,  C30B15/30 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04

Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

公开(公告)号：US20220375784A1

公开(公告)日：2022-11-24

申请号：US17880360

申请日：2022-08-03

Applicant: GlobalWafers Co. Ltd.

Inventor： Gaurab Samanta ,  Salvador Zepeda

IPC: H01L21/762

Abstract: A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.

公开(公告)号：US12037699B2

公开(公告)日：2024-07-16

申请号：US18298713

申请日：2023-04-11

Applicant: GlobalWafers Co., Ltd.

Inventor： Gaurab Samanta ,  Parthiv Daggolu ,  Sumeet Bhagavat ,  Soubir Basak ,  Nan Zhang

IPC: C30B15/20 ,  C30B15/10 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04

CPC classification number: C30B15/20 ,  C30B15/10 ,  C30B15/30 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04

Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

公开(公告)号：US20230250551A1

公开(公告)日：2023-08-10

申请号：US18298713

申请日：2023-04-11

Applicant: GlobalWafers Co., Ltd.

Inventor： Gaurab Samanta ,  Parthiv Daggolu ,  Sumeet Bhagavat ,  Soubir Basak ,  Nan Zhang

IPC: C30B15/20 ,  C30B29/06 ,  C30B15/30 ,  C30B15/10 ,  C30B30/04

CPC classification number: C30B15/20 ,  C30B29/06 ,  C30B15/305 ,  C30B15/10 ,  C30B15/30 ,  C30B30/04

Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

公开(公告)号：US11668020B2

公开(公告)日：2023-06-06

申请号：US17380393

申请日：2021-07-20

Applicant: GlobalWafers Co., Ltd.

Inventor： Gaurab Samanta ,  Parthiv Daggolu ,  Sumeet Bhagavat ,  Soubir Basak ,  Nan Zhang

IPC: C30B15/20 ,  C30B29/06 ,  C30B15/30 ,  C30B15/10 ,  C30B30/04

CPC classification number: C30B15/20 ,  C30B15/10 ,  C30B15/30 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04

Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

公开(公告)号：US11443978B2

公开(公告)日：2022-09-13

申请号：US17024879

申请日：2020-09-18

Applicant: GlobalWafers Co. Ltd.

Inventor： Gaurab Samanta ,  Salvador Zepeda

IPC: H01L21/762

Abstract: A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.

公开(公告)号：US11313049B2

公开(公告)日：2022-04-26

申请号：US15297853

申请日：2016-10-19

Applicant: GlobalWafers Co., Ltd.

Inventor： Soubir Basak ,  Gaurab Samanta ,  Parthiv Daggolu ,  Benjamin Michael Meyer ,  William L. Luter ,  Jae Woo Ryu ,  Eric Michael Gitlin

IPC: C30B15/20 ,  C30B29/06 ,  C30B15/14

Abstract: A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.