-
公开(公告)号：US11753741B2
公开(公告)日：2023-09-12
申请号：US17199645
申请日：2021-03-12
发明人： Zheng Lu , Gaurab Samanta , Tse-Wei Lu , Feng-Chien Tsai
CPC分类号： C30B33/02 , C30B15/203 , C30B15/206 , C30B29/06 , H01L21/00 , H01L21/0262 , H01L21/02381 , H01L21/02532
摘要： Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.
-
公开(公告)号：US11136691B2
公开(公告)日：2021-10-05
申请号：US16916577
申请日：2020-06-30
发明人： Gaurab Samanta , Parthiv Daggolu , Sumeet Bhagavat , Soubir Basak , Nan Zhang
摘要： A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.
-
公开(公告)号：US20210198805A1
公开(公告)日：2021-07-01
申请号：US17199645
申请日：2021-03-12
发明人： Zheng Lu , Gaurab Samanta , Tse-Wei Lu , Feng-Chien Tsai
摘要： Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.
-
公开(公告)号：US20240247402A1
公开(公告)日：2024-07-25
申请号：US18626962
申请日：2024-04-04
发明人： Gaurab Samanta , Parthiv Daggolu , Sumeet Bhagavat , Soubir Basak , Nan Zhang
摘要： A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.
-
公开(公告)号：US20220375784A1
公开(公告)日：2022-11-24
申请号：US17880360
申请日：2022-08-03
发明人： Gaurab Samanta , Salvador Zepeda
IPC分类号： H01L21/762
摘要： A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.
-
公开(公告)号：US20210348298A1
公开(公告)日：2021-11-11
申请号：US17380393
申请日：2021-07-20
发明人： Gaurab Samanta , Parthiv Daggolu , Sumeet Bhagavat , Soubir Basak , Nan Zhang
摘要： A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.
-
公开(公告)号：US20210005508A1
公开(公告)日：2021-01-07
申请号：US17024879
申请日：2020-09-18
发明人： Gaurab Samanta , Salvador Zepeda
IPC分类号： H01L21/762
摘要： A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.
-
公开(公告)号：US10745823B2
公开(公告)日：2020-08-18
申请号：US15780520
申请日：2016-12-01
发明人： Gaurab Samanta , Parthiv Daggolu , Sumeet Bhagavat , Soubir Basak , Nan Zhang
摘要： A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.
-
公开(公告)号：US10513796B2
公开(公告)日：2019-12-24
申请号：US15959964
申请日：2018-04-23
发明人： Soubir Basak , Carissima Marie Hudson , Gaurab Samanta , Jae-Woo Ryu , Hariprasad Sreedharamurthy , Kirk D. McCallum , HyungMin Lee
IPC分类号： B32B3/00 , C30B15/20 , C30B15/30 , C30B29/06 , C30B15/04 , C30B30/04 , H01L29/165 , H01L29/167 , H01L29/739
摘要： An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.
-
公开(公告)号：US20190378753A1
公开(公告)日：2019-12-12
申请号：US16420637
申请日：2019-05-23
发明人： Gaurab Samanta , Salvador Zepeda
IPC分类号： H01L21/762
摘要： A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.
-
-
-
-
-
-
-
-
-
搜索结果
23 条记录 (耗时 0.018 秒)
