-
公开(公告)号：US11136691B2
公开(公告)日：2021-10-05
申请号：US16916577
申请日：2020-06-30
Applicant: GlobalWafers Co., Ltd.
Inventor： Gaurab Samanta , Parthiv Daggolu , Sumeet Bhagavat , Soubir Basak , Nan Zhang
Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.
-
公开(公告)号：US20240247402A1
公开(公告)日：2024-07-25
申请号：US18626962
申请日：2024-04-04
Applicant: GlobalWafers Co., Ltd.
Inventor： Gaurab Samanta , Parthiv Daggolu , Sumeet Bhagavat , Soubir Basak , Nan Zhang
Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.
-
公开(公告)号：US12024789B2
公开(公告)日：2024-07-02
申请号：US17071714
申请日：2020-10-15
Applicant: GlobalWafers Co., Ltd.
Inventor： Richard J. Phillips , Parthiv Daggolu , Eric Gitlin , Robert Standley , HyungMin Lee , Nan Zhang , Jae-Woo Ryu , Soubir Basak
Abstract: Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.
-
公开(公告)号：US20210348298A1
公开(公告)日：2021-11-11
申请号：US17380393
申请日：2021-07-20
Applicant: GlobalWafers Co., Ltd.
Inventor： Gaurab Samanta , Parthiv Daggolu , Sumeet Bhagavat , Soubir Basak , Nan Zhang
Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.
-
公开(公告)号：US10745823B2
公开(公告)日：2020-08-18
申请号：US15780520
申请日：2016-12-01
Applicant: GlobalWafers Co., Ltd.
Inventor： Gaurab Samanta , Parthiv Daggolu , Sumeet Bhagavat , Soubir Basak , Nan Zhang
Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.
-
Patent Agency Ranking
公开(公告)号：US20180355509A1
公开(公告)日：2018-12-13
申请号：US15780520
申请日：2016-12-01
Applicant: GlobalWafers Co., Ltd.
Inventor： Gaurab Samanta , Parthiv Daggolu , Sumeet Bhagavat , Soubir Basak , Nan Zhang
Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.
-
公开(公告)号：US11072870B2
公开(公告)日：2021-07-27
申请号：US16237071
申请日：2018-12-31
Applicant: GlobalWafers Co., Ltd
Inventor： Soubir Basak , Gaurab Samanta , Parthiv Daggolu , Benjamin Michael Meyer , William L. Luter , Jae Woo Ryu , Eric Michael Gitlin
Abstract: A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.
-
公开(公告)号：US20210071315A1
公开(公告)日：2021-03-11
申请号：US17071714
申请日：2020-10-15
Applicant: GlobalWafers Co., Ltd.
Inventor： Richard J. Phillips , Parthiv Daggolu , Eric Gitlin , Robert Standley , HyungMin Lee , Nan Zhang , Jae-Woo Ryu , Soubir Basak
Abstract: Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.
-
9.发明申请公开(公告)号：US20190136408A1
公开(公告)日：2019-05-09
申请号：US16237071
申请日：2018-12-31
Applicant: GlobalWafers Co., Ltd
Inventor： Soubir Basak , Gaurab Samanta , Parthiv Daggolu , Benjamin Michael Meyer , William L. Luter , Jae Woo Ryu , Eric Michael Gitlin
Abstract: A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.
-
公开(公告)号：US12037699B2
公开(公告)日：2024-07-16
申请号：US18298713
申请日：2023-04-11
Applicant: GlobalWafers Co., Ltd.
Inventor： Gaurab Samanta , Parthiv Daggolu , Sumeet Bhagavat , Soubir Basak , Nan Zhang
Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.
-
-
-
-
-
-
-
-
-
Search Results
15
records
(took 0.022 seconds)
