公开(公告)号：US20240210577A1

公开(公告)日：2024-06-27

申请号：US18594992

申请日：2024-03-04

申请人： LUXIUM SOLUTIONS, LLC

发明人： Samuel BLAHUTA ,  Vladimir OUSPENSKI

IPC分类号： G01T1/202 ,  C09K11/77 ,  C30B15/00 ,  C30B15/04 ,  C30B29/34 ,  G01T1/20

CPC分类号： G01T1/2023 ,  C09K11/7774 ,  C09K11/77742 ,  C30B15/00 ,  C30B15/04 ,  C30B29/34 ,  G01T1/20183 ,  G01T1/20185 ,  G01T1/20189

摘要： A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.

公开(公告)号：US11655557B2

公开(公告)日：2023-05-23

申请号：US17216659

申请日：2021-03-29

申请人： MEISHAN BOYA ADVANCED MATERIALS CO., LTD.

发明人： Yu Wang ,  Weiming Guan ,  Zhenxing Liang ,  Min Li

IPC分类号： C30B35/00 ,  C30B15/02 ,  C30B15/22 ,  C30B29/22 ,  C30B15/10 ,  C30B15/14 ,  C30B29/28 ,  C30B29/34

CPC分类号： C30B15/02 ,  C30B15/10 ,  C30B15/14 ,  C30B15/22 ,  C30B29/22 ,  C30B29/28 ,  C30B29/34

摘要： The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

公开(公告)号：US20190204458A1

公开(公告)日：2019-07-04

申请号：US16297097

申请日：2019-03-08

申请人： SAINT-GOBAIN CRISTAUX & DETECTEURS

发明人： Samuel Blahuta ,  Vladimir Ouspenski

IPC分类号： G01T1/202 ,  C30B29/34 ,  C30B15/04 ,  G01T1/20

CPC分类号： G01T1/2023 ,  C09K11/7774 ,  C30B15/00 ,  C30B15/04 ,  C30B29/34 ,  G01T1/2018

摘要： A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.

公开(公告)号：US20190144291A1

公开(公告)日：2019-05-16

申请号：US16183862

申请日：2018-11-08

申请人： University of Houston System

发明人： Jeffrey D. Rimer ,  Manjesh Kumar

IPC分类号： C01B39/54 ,  B01J29/70 ,  B01J47/00 ,  C30B7/14 ,  C30B29/14 ,  C01B39/04 ,  C30B29/34

CPC分类号： C01B39/54 ,  B01J29/035 ,  B01J29/06 ,  B01J29/7015 ,  B01J29/85 ,  B01J35/002 ,  B01J35/0033 ,  B01J35/023 ,  B01J47/00 ,  B01J2229/62 ,  C01B39/04 ,  C01P2004/03 ,  C01P2004/20 ,  C01P2004/38 ,  C01P2004/60 ,  C30B7/14 ,  C30B29/14 ,  C30B29/34 ,  C30B29/60

摘要： Embodiments of the invention generally provide compositions of crystalline zeolite materials with tailored crystal habits and the methods for forming such crystalline zeolite materials. The methods for forming the crystalline zeolite materials include binding one or more zeolite growth modifiers (ZGMs) to the surface of a zeolite crystal, which results in the modification of crystal growth rates along different crystallographic directions, leading to the formation of zeolites having a tailored crystal habit. The improved properties enabled by the tailored crystal habit include a minimized crystal thickness, a shortened internal diffusion pathlength, and a greater step density as compared to a zeolite having the native crystal habit prepared by traditional processes. The tailored crystal habit provides the crystalline zeolite materials with an aspect ratio of about 4 or greater and crystal surfaces having a step density of about 25 steps/μm2 or greater.

公开(公告)号：US09810792B2

公开(公告)日：2017-11-07

申请号：US14655666

申请日：2013-12-26

申请人： TOHOKU UNIVERSITY

发明人： Akira Yoshikawa ,  Shunsuke Kurosawa ,  Yuui Yokota ,  Yasuhiro Shoji ,  Akira Suzuki ,  Toetsu Shishido

IPC分类号： G01T1/20 ,  G01T1/202 ,  C09K11/77 ,  C30B29/32 ,  C30B29/34 ,  G21K4/00 ,  C30B13/00 ,  C30B15/00 ,  C30B29/22

CPC分类号： G01T1/2023 ,  C09K11/7769 ,  C09K11/7774 ,  C09K11/7775 ,  C30B13/00 ,  C30B15/00 ,  C30B29/22 ,  C30B29/32 ,  C30B29/34 ,  G21K4/00

摘要： A crystal material represented by a general formula (1): (Gd1-x-y-zLaxMEyREz)2MM2O7   (1), where ME is at least one selected from Y, Yb, Sc, and Lu; RE is Ce or Pr; MM is at least one selected from Si and Ge; and ranges of x, y, and z are represented by the following (i): (i) 0.0≦x+y+z

公开(公告)号：US09469915B2

公开(公告)日：2016-10-18

申请号：US13923868

申请日：2013-06-21

申请人： Clemson University

发明人： Joseph Kolis ,  Colin McMillen

IPC分类号： C30B7/10 ,  C30B29/34 ,  H01S3/16 ,  C30B29/28 ,  C30B29/30 ,  H01S3/06

CPC分类号： C30B7/10 ,  C30B29/28 ,  C30B29/30 ,  C30B29/34 ,  H01S3/0604 ,  H01S3/0606 ,  H01S3/0612 ,  H01S3/1611 ,  H01S3/1643 ,  H01S3/1691 ,  H01S2301/02 ,  Y10T428/21

摘要： Single crystals are described that contain several regimes within the crystal that perform different functions related to the enhanced performance of a laser gain medium. At least one regime of the single crystals can be utilized to suppress amplified spontaneous emission and parasitic oscillation in a laser gain medium. A single crystal can include core and cladding regions, the cladding region providing amplified spontaneous emission suppression. The core region of the crystal can include as dopant one or more ions that take part in the lasing when suitably pumped. The amplified spontaneous emission suppression region can include as dopant one or more ions that can prevent additional spontaneous emission that can to depletion of the upper laser states, thus reducing laser performance including one or more ions that absorb spontaneously emitted photons and/or a higher concentration of the active lasing ions of the core.

摘要翻译： 描述了在晶体内包含几个与激光增益介质的增强性能有关的功能的晶体。 可以使用单晶的至少一个方案来抑制激光增益介质中的放大的自发发射和寄生振荡。 单晶可以包括芯和包层区域，包层区域提供放大的自发发射抑制。 晶体的核心区域可以包括作为掺杂剂的一个或多个离子，当适当地泵浦时，它们参与激光。 放大的自发发射抑制区域可以包括作为掺杂剂的一种或多种离子，其可以防止可以消耗上部激光状态的额外的自发发射，从而降低激光性能，包括吸收自发发射的光子的一种或多种离子和/或更高的浓度 的核心的活性激光离子。

公开(公告)号：US09328288B2

公开(公告)日：2016-05-03

申请号：US14536884

申请日：2014-11-10

申请人： Siemens Medical Solutions USA, Inc.

发明人： Peter Carl Cohen ,  A. Andrew Carey ,  Mark S. Andreaco ,  Matthias J. Schmand ,  Brant Quinton

IPC分类号： G01T1/20 ,  C09K11/77 ,  C30B15/00 ,  C30B29/34

CPC分类号： C09K11/7774 ,  C30B15/00 ,  C30B29/34

摘要： A method for making a rare-earth oxyorthosilicate scintillator single crystal includes growing a single crystal from a melt of compounds including a rare-earth element (such as Lu), silicon and oxygen, a compound including a rare-earth activator (such as Ce), and a compound of a Group-7 element (such as Mn). The method further includes selecting an scintillation performance parameter (such as decay), and based on the scintillation performance parameter to be achieved, doping activator and Group-7 element at predetermined levels, or relative levels between the two, so as to achieve stable growth of the single-crystalline scintillator material from the melt.

摘要翻译： 制备稀土氧原硅酸盐闪烁体单晶的方法包括从包括稀土元素（如Lu），硅和氧的化合物的熔体中生长单晶，包括稀土活化剂（例如Ce ）和第7族元素（如Mn）的化合物。 该方法还包括选择闪烁性能参数（如衰变），并且基于要实现的闪烁性能参数，掺杂活化剂和第7族元素在预定水平或两者之间的相对水平，以实现稳定生长 的来自熔体的单晶闪烁体材料。

公开(公告)号：US09303333B2

公开(公告)日：2016-04-05

申请号：US13884363

申请日：2011-11-10

申请人： Shuuji Oosumi ,  Yasutaka Nomi ,  Nobuo Nakamura ,  Hiroshi Hatanaka ,  Tomio Kajigaya

发明人： Shuuji Oosumi ,  Yasutaka Nomi ,  Nobuo Nakamura ,  Hiroshi Hatanaka ,  Tomio Kajigaya

IPC分类号： C30B29/34 ,  G02B1/02 ,  C30B19/12 ,  C30B29/28 ,  G02F1/09 ,  G02F1/00

CPC分类号： C30B29/34 ,  C30B19/12 ,  C30B29/28 ,  G02B1/02 ,  G02F1/0036 ,  G02F1/093

摘要： A bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.6 dB and which can be produced in a high yield, as well as an optical isolator, which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the RIG is represented by a chemical formula of Nd3-x-yGdxBiyFe5O12, and x and y satisfy 0.89≦x≦1.43 and 0.85≦y≦1.19. In contrast to conventional RIGs, the RIG represented by the chemical formula of Nd3-x-yGdxBiyFe5O12 of the present invention has an insertion loss of less than 0.6 dB and makes it possible to reduce the amount of heat generated because of absorption of light at wavelengths of about 1 μm. Hence, the RIG has such a remarkable effect that the RIG can be used as a Faraday rotator used for an optical isolator in a high-power laser device for processing.

摘要翻译： 具有小于0.6dB的插入损耗并且可以高产率生产的铋取代的稀土铁石榴石晶体膜（RIG）以及通过液相外延生长的光隔离器 由Gd 3（ScGa）5 O 12化学式表示的非磁性石榴石基材，其中RIG由化学式Nd 3-x-yGd x B y Fe 5 O 12表示，x和y满足0.89＆nlE; x＆nlE; 1.43和0.85＆nlE; y＆nlE; 1.19。 与传统的RIG相反，本发明的Nd3-x-yGdxBiyFe5O12化学式表示的RIG具有小于0.6dB的插入损耗，并且可以减少由于波长吸收光而产生的热量 约1μm。 因此，RIG具有如此显着的效果，RIG可用作用于高功率激光装置中用于光隔离器的法拉第旋转器用于处理。

公开(公告)号：US20150266773A1

公开(公告)日：2015-09-24

申请号：US14402150

申请日：2013-05-15

申请人： NIPPON ELECTRIC GLASS CO., LTD.

发明人： Shuhei Ogawa ,  Shingo Nakane

IPC分类号： C03C10/00 ,  C30B29/34 ,  C30B29/18 ,  C03B32/02 ,  C30B1/02

CPC分类号： C03C10/0027 ,  C03B32/02 ,  C03C3/097 ,  C03C2204/00 ,  C30B1/023 ,  C30B29/18 ,  C30B29/34

摘要： In a Li2O—Al2O3—SiO2 based crystallized glass using SnO2 as a substitute fining agent for As2O3 or Sb2O3, a crystallized glass having less yellow coloration is provided at low costs. The glass is a Li2O—Al2O3—SiO2 based crystallized glass comprising from 0.01 to 0.9% of SnO2 in terms of % by mass and having a content of each of As2O3 and Sb2O3 of 1,000 ppm or less as a glass composition, which has a V2O5 content of from 0.08 to 15 ppm in the glass composition.

摘要翻译： 在使用SnO 2作为As 2 O 3或Sb 2 O 3的替代澄清剂的Li 2 O-Al 2 O 3 -SiO 2系结晶玻璃中，以低成本提供了黄色变浅的结晶化玻璃。 所述玻璃为Li2O-Al2O3-SiO2系结晶玻璃，其以质量％计含有0.01〜0.9质量％的SnO 2，作为玻璃组合物的As 2 O 3和Sb 2 O 3的含量为1000ppm以下，其具有V 2 O 5 玻璃组合物中的含量为0.08〜15ppm。

公开(公告)号：US20150184312A1

公开(公告)日：2015-07-02

申请号：US14623760

申请日：2015-02-17

申请人： Siemens Medical Solutions USA, Inc.

发明人： Mark S. Andreaco ,  Peter Carl Cohen ,  Alexander Andrew Carey

IPC分类号： C30B15/04 ,  C09K11/77 ,  C30B29/34

CPC分类号： C30B15/04 ,  C09K11/7706 ,  C09K11/7774 ,  C30B15/02 ,  C30B29/34

摘要： A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen.

摘要翻译： 公开了生长稀土氧原硅酸盐晶体的方法和使用该方法生长的晶体。 该方法包括通过熔化包含至少一种第一稀土元素的第一物质并提供包括惰性气体和包含氧的气​​体的气氛来制备熔体。