公开(公告)号：US10005675B2

公开(公告)日：2018-06-26

申请号：US14900016

申请日：2013-06-20

申请人： Technical Institute of Physics and Chemistry, Chinese Academy of Sciences ,  Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences

发明人： Guochun Zhang ,  Junhua Luo ,  Mingjun Xia ,  Sangen Zhao ,  Yicheng Wu

IPC分类号： C30B29/22 ,  C01B35/12 ,  C30B29/10 ,  C30B19/02 ,  C30B19/06 ,  C30B33/02 ,  C30B9/06 ,  C30B9/12 ,  C30B19/04

CPC分类号： C01B35/128 ,  C30B9/06 ,  C30B9/12 ,  C30B19/02 ,  C30B19/04 ,  C30B19/062 ,  C30B29/10 ,  C30B29/22 ,  C30B33/02

摘要： The present invention relates to the field of nonlinear optical crystal materials and provided herein a Li4Sr(BO3)2 compound, a Li4Sr(BO3)2 nonlinear optical crystal as well as preparation method and use thereof. The Li4Sr(BO3)2 nonlinear optical crystal has a second harmonic conversion efficiency at 1064 nm of about two times that of a KH2PO4 (KDP) crystal, and an UV absorption cut-off edge less than 190 nm. Furthermore, the crystal did not disintegrate. By flux method with Li2O, Li2O—B2O and Li2O—B2O3—LiF used as flux agent, large-size and transparent Li4Sr(BO3)2 nonlinear optical crystal can grow. The Li4Sr(BO3)2 crystal had stable physicochemical properties, moderate hardness, and was easy to cut, processing, preserve and use. Therefore it can be used for preparing nonlinear optical devices and thus for developing nonlinear optical applications in the ultraviolet and deep-ultraviolet band.

公开(公告)号：US09856575B2

公开(公告)日：2018-01-02

申请号：US14853133

申请日：2015-09-14

申请人： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse

发明人： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse

IPC分类号： C30B19/02 ,  C30B9/12 ,  C30B9/00 ,  C30B17/00 ,  C30B29/40

CPC分类号： C30B9/12 ,  C30B9/00 ,  C30B9/10 ,  C30B17/00 ,  C30B19/02 ,  C30B19/062 ,  C30B19/106 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092

摘要： A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

公开(公告)号：US09528196B2

公开(公告)日：2016-12-27

申请号：US14131295

申请日：2012-07-25

申请人： Michel Bruel

发明人： Michel Bruel

IPC分类号： C30B11/14 ,  C30B19/10 ,  H01L21/02 ,  C30B19/00 ,  C30B29/06 ,  C30B29/08 ,  C30B19/06

CPC分类号： C30B19/10 ,  C30B19/00 ,  C30B19/062 ,  C30B29/06 ,  C30B29/08 ,  H01L21/02532 ,  H01L21/02625

摘要： The invention concerns a method for fabricating a substrate in semiconductor material characterized in that it comprises the steps of: starting from a donor substrate in a first semiconductor material at an initial temperature, contacting a surface of the donor substrate with a bath of a second semiconductor material held in the liquid state at a temperature higher than the initial temperature, the second semiconductor material being chosen so that its melting point is equal to or lower than the melting point of the first semiconductor material, solidifying the bath material on the surface to thicken the donor substrate with a solidified layer. The invention also concerns a device for implementing the method.

摘要翻译： 本发明涉及一种用于制造半导体材料中的衬底的方法，其特征在于其包括以下步骤：从初始温度下的第一半导体材料中的施主衬底开始，将供体衬底的表面与第二半导体 在高于初始温度的温度下保持在液态的材料，选择第二半导体材料使其熔点等于或低于第一半导体材料的熔点，使表面上的浴材固化成稠化 施主衬底具有固化层。 本发明还涉及一种用于实现该方法的装置。

公开(公告)号：US09187845B2

公开(公告)日：2015-11-17

申请号：US13505632

申请日：2010-11-03

申请人： Philippe Veber ,  Matias Velazquez ,  Jean-Pierre Chaminade ,  Oudomsack Viraphong

发明人： Philippe Veber ,  Matias Velazquez ,  Jean-Pierre Chaminade ,  Oudomsack Viraphong

IPC分类号： C09K5/00 ,  C30B29/22 ,  C30B9/00 ,  C30B9/04 ,  C30B17/00 ,  C30B19/02 ,  C30B19/04 ,  C30B19/06 ,  C30B29/24 ,  C30B15/14

CPC分类号： C30B29/22 ,  C30B9/00 ,  C30B9/04 ,  C30B17/00 ,  C30B19/02 ,  C30B19/04 ,  C30B19/062 ,  C30B29/24

摘要： A method is provided for preparing solid or thin-film single-crystals of cubic sesquioxides (space group no. 206, Ia-3) of scandium, yttrium or rare earth elements doped with lanthanide ions with valence +III, using a high-temperature flux growth technique, and to the various uses of the single-crystals obtained according to said method, in particular in the field of optics.

摘要翻译： 提供了一种用于制备掺杂有镧系元素离子的钪，钇或稀土元素的立方倍半氧化物（空间群206，Ia-3）的固体或薄膜单晶的方法，使用高温 助熔剂生长技术，以及根据所述方法获得的单晶的各种用途，特别是在光学领域。

公开(公告)号：US06951584B2

公开(公告)日：2005-10-04

申请号：US10364517

申请日：2003-02-12

申请人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B19/06 ,  C30B31/04

CPC分类号： C30B29/06 ,  C30B19/062

摘要： An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

摘要翻译： 一种用于制造半导体薄膜的装置，其中通过将多个基板浸入填充在坩埚中的溶液中使半导体薄膜在多个基板上生长，该溶液包含半导体作为溶质，同时将其移动 解决方案。 每个基板的生长表面的中心部分上的法线方向与基板的移动方向之间的角度设定在87度以下，基板的移动产生溶液的流动 。

公开(公告)号：US4032370A

公开(公告)日：1977-06-28

申请号：US657173

申请日：1976-02-11

申请人： Herbert F. Matare

发明人： Herbert F. Matare

IPC分类号： C30B19/06 ,  H01L21/208

CPC分类号： C30B19/062 ,  C30B19/068 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02625 ,  H01L21/02628

摘要： The improved method of the present invention comprises contacting a clean and preferably etched selected crystalline substrate with a controlled thickness of a melt comprising a saturated solution of selected materials capable of forming semi-conductor junctions, preferably heterojunctions, with the substrate. The contacting is carried out while the resulting melt and substrate sandwich is shielded by a protective atmosphere of gas such as hydrogen and while the sandwich is subjected to a progressively lower temperature gradient maintained across the melt-wafer package.The method and apparatus are particularly applicable to the preparation of improved light-emitting diodes by the liquid epitaxial growth technique.

公开(公告)号：US4022652A

公开(公告)日：1977-05-10

申请号：US611838

申请日：1975-09-09

申请人： Hitoshi Hirano ,  Tsuguo Fukuda

发明人： Hitoshi Hirano ,  Tsuguo Fukuda

IPC分类号： C01G35/00 ,  C30B15/00 ,  C30B15/34 ,  C30B19/06 ,  H01L21/208 ,  B01J17/18 ,  B01J17/34 ,  B01J17/36

CPC分类号： C30B19/062 ,  C30B15/00 ,  C30B15/007 ,  C30B15/34 ,  C30B29/30 ,  Y10S117/90

摘要： A method of growing multiple monocrystalline layers from melts comprising growing a first monocrystalline layer from the first melt, and growing a second monocrystalline layer on the first monocrystalline layer from the second melt by successively contacting the first monocrystalline layer with the second melt during the growth of the first monocrystalline layer.

摘要翻译： 一种从熔体生长多个单晶层的方法，包括从第一熔体生长第一单晶层，以及在第二熔体的生长过程中，通过使第一单晶层与第二熔体连续接触，从第二熔体在第一单晶层上生长第二单晶层 第一个单晶层。

公开(公告)号：US3773571A

公开(公告)日：1973-11-20

申请号：US3773571D

申请日：1967-06-15

申请人： IBM

发明人： RUPPRECHT H ,  WOODALL J

IPC分类号： C30B19/04 ,  C30B19/06 ,  H01L21/00 ,  H01L21/208 ,  H01L33/00 ,  H01L7/38 ,  B01J17/20

CPC分类号： C30B29/40 ,  C30B19/04 ,  C30B19/062 ,  H01L21/00 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  H01L33/0062 ,  Y10S148/065 ,  Y10S438/936

摘要： Semiconductor ternary compounds are prepared by liquid phase epitaxy by using control of the cooling rate to control the crystalline composition. In particular, Ga1 xAlxAs is grown on a GaAs substrate and has a homogeneous composition. This is accomplished by cooling a melt of Ga and Al saturated with GaAs in Al2O3 crucible using a single crystalline wafer of GaAs as the substrate. Critical parameters are an excess of GaAs, the Al/Ga ratio, the growth temperature, and the cooling rate. Electroluminescent diodes made from the Ga1 xAlxAs have relatively high quantum efficiencies, e.g., 3.3 percent when emitting light of energy 1.70 electron volts through an epoxy dome with a matching index of refraction. Illustratively, for the electroluminescent diodes with 3.3 percent quantum efficiency, exemplary parameters included a melt composition of 20 grams of Ga, 50 milligrams of Al, growth rate of 1*C per minute over a temperature range of 950*C to 920*C for n-type dopant of 5 milligrams of Te and an additional 50 milligrams of Zn from 920*C to 860*C for counter doping to ptype. Further, a GaAs - Ga1 xAlxAs heterojunction is obtained if the cooling rate is changed abruptly from 1*C per minute to greater than 10*C per minute.

公开(公告)号：US3677836A

公开(公告)日：1972-07-18

申请号：US3677836D

申请日：1969-09-23

申请人： IBM

发明人： LORENZ MAX R

IPC分类号： C30B19/06 ,  C30B19/10 ,  H01L21/208 ,  H01L33/00 ,  H01S3/18 ,  H05B33/00

CPC分类号： C30B19/062 ,  C30B19/10 ,  C30B19/106 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  H01L33/00 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/107 ,  Y10S148/135

摘要： GROWTH AS WELL AS BY ADDING ALUMINUM TO THE MELT AND A PORTION OF THE DEVICE IS GROWN ISOTHERMALLY.

THE ELECTROLUMINESCENT DIODES ARE FABRICATED OF GALLIUM ALUMINUM ARSENIDE IN WHICH THE BAND GAP IS CONTROLLED DURING THE GROWTH TO PROVIDE IMPROVED EFFICIENCY DEVICES. THE BODIES ARE GROWN BY LIQUID PHASE EPITAXY SO THAT THERE IS A CENTRALLY LOCATED REGION OF CONSTANT BAND GAP ADJACENT THE JUNCTION IN WHICH THE RECOMBINATION RADIATION TAKES PLACE. IN THE REGIONS EXTENDING FROM THIS RECOMBINATION RADIATION REGION IN BOTH DIRECTIONS TO THE OPPOSITE SURFACE OF THE DIODE, THE BAND GAP IS LARGER. THE VARIATION IN BAND GAP IS ACHIEVED BY CONTROLLING THE TEMPERATURE DURING THE

公开(公告)号：US3648653A

公开(公告)日：1972-03-14

申请号：US3648653D

申请日：1970-06-01

申请人： BELL TELEPHONE LABOR INC

发明人： VEHASE ROBERT CHASE

IPC分类号： C30B19/06 ,  B05C3/02

CPC分类号： C30B19/068 ,  C30B19/062

摘要： A liquid phase crystal growth apparatus designed to permit simultaneous growth upon a plurality of substrates is described. The apparatus includes a dipping head having at least one slotted channel, on at least one side, tapered to hold at least one substrate. Affixed to the dipping head by means of a rod is a dipping means which dips the head and thus the substrate into a saturated growth solution. The dipping action forces the growth solution up and over the substrate and growth is initiated thereon by lowering the temperature of the saturated growth solution.

摘要翻译： 描述了设计成允许在多个基板上同时生长的液相晶体生长装置。 该装置包括具有至少一个开槽通道的浸渍头，在至少一侧上具有锥形以容纳至少一个基底。 借助于杆将浸渍头粘合在一起，该浸渍装置将头部浸没，从而将基底浸入饱和生长溶液中。 浸渍作用迫使生长溶液向上和向上延伸，并通过降低饱和生长溶液的温度在其上开始生长。