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    METHOD OF PRODUCING GROUP III NITRIDE CRYSTAL, APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND GROUP III NITRIDE CRYSTAL
    2.
    发明申请
    METHOD OF PRODUCING GROUP III NITRIDE CRYSTAL, APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND GROUP III NITRIDE CRYSTAL 有权
    生产III族氮化物晶体的方法，用于生产III族氮化物晶体的装置和III族氮化物晶体

    公开(公告)号：US20090249997A1

    公开(公告)日：2009-10-08

    申请号：US11914193

    申请日：2006-05-12

    申请人： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse

    发明人： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse

    IPC分类号： C30B11/04

    CPC分类号： C30B9/12 ,  C30B29/403 ,  C30B35/00 ,  Y10T117/1024

    摘要： In a method of producing a group III nitride crystal in which a melt holding vessel where a melt containing a group III metal and flux is held is accommodated in a reaction vessel and a group III nitride crystal is produced as a substance containing nitrogen is supplied from an outside to the reaction vessel through a pipe, the method includes a step of forming an accumulated part of a liquid in the pipe to thereby temporarily close the pipe before growing the group III nitride crystal in the melt holding vessel.

    摘要翻译： 在制造其中保持含有III族金属和助熔剂的熔体的熔融保持容器的III族氮化物晶体的方法被容纳在反应容器中，并且作为含有氮的物质产生III族氮化物晶体， 通过管道到达反应容器的外部，该方法包括在熔融容器内生长III族氮化物晶体之前，在管中形成液体的积聚部分以暂时封闭管道的步骤。

    Crystal preparing device, crystal preparing method, and crystal
    3.
    发明授权
    Crystal preparing device, crystal preparing method, and crystal 有权
    晶体制备装置，晶体制备方法和晶体

    公开(公告)号：US08475593B2

    公开(公告)日：2013-07-02

    申请号：US13170431

    申请日：2011-06-28

    申请人： Hirokazu Iwata ,  Seiji Sarayama ,  Akihiro Fuse

    发明人： Hirokazu Iwata ,  Seiji Sarayama ,  Akihiro Fuse

    IPC分类号： C30B9/00 ,  C30B11/00

    CPC分类号： C30B9/10 ,  C30B17/00 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1024

    摘要： In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a molten alkali metal between the container space and an outside of the container, the molten alkali metal contacting the container space. A gas supply device supplies nitrogen gas to the container space. A heating device heats the crucible to a crystal growth temperature. The crystal preparing device is provided so that a vapor pressure of the alkali metal which evaporates from the molten alkali metal is substantially equal to a vapor pressure of the alkali metal which evaporates from the mixed molten metal.

    摘要翻译： 在晶体制备装置中，坩埚保持含有碱金属和III族金属的混合熔融金属。 容器具有与混合熔融金属接触的容器空间，并且在容器空间和容器外部之间保持熔融碱金属，熔融碱金属与容器空间接触。 气体供给装置向容器空间供给氮气。 加热装置将坩埚加热至晶体生长温度。 提供了晶体制备装置，使得从熔融碱金属蒸发的碱金属的蒸汽压基本上等于从混合的熔融金属蒸发的碱金属的蒸气压。

    Crystal growth apparatus and method of producing a crystal
    4.
    发明授权
    Crystal growth apparatus and method of producing a crystal 有权
    晶体生长装置及其制造方法

    公开(公告)号：US07462238B2

    公开(公告)日：2008-12-09

    申请号：US11498841

    申请日：2006-08-04

    申请人： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse ,  Kuniaki Ara ,  Junichi Saito

    发明人： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse ,  Kuniaki Ara ,  Junichi Saito

    IPC分类号： C30B25/14

    CPC分类号： C30B29/40 ,  C30B7/00 ,  C30B9/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

    摘要： A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal in a vessel space thereof, a porous member holding a metal melt by a surface tension thereof in a path through which a vapor of the alkali metal in contact with the metal mixture in the vessel space escapes to an external space, the porous member further supplying a nitrogen source gas fed from outside thereto further to the reaction vessel therethrough and through the metal melt by a pressure difference formed between the vessel space in the reaction vessel and the external space, and a heating apparatus heating the melt mixture to a crystal growth temperature.

    摘要翻译： 晶体生长装置包括在其容器空间中容纳含有碱金属和III族金属的熔融混合物的反应容器，通过其表面张力将金属熔体保持在通过其中的碱金属的蒸汽的路径中的多孔构件 与容器空间中的金属混合物接触逃逸到外部空间，多孔构件进一步向外部供给来自反应容器的氮源气体，并通过金属熔体通过在容器空间之间形成的压力差 反应容器和外部空间，以及将熔融混合物加热至晶体生长温度的加热装置。

    Crystal growth apparatus and method of producing a crystal
    5.
    发明申请
    Crystal growth apparatus and method of producing a crystal 有权
    晶体生长装置及其制造方法

    公开(公告)号：US20070034143A1

    公开(公告)日：2007-02-15

    申请号：US11498841

    申请日：2006-08-04

    申请人： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse ,  Kuniaki Ara ,  Junichi Saito

    发明人： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse ,  Kuniaki Ara ,  Junichi Saito

    IPC分类号： C30B7/00 ,  C30B21/02 ,  C30B23/00 ,  C30B28/14 ,  C30B25/00 ,  C30B28/06 ,  C30B28/12

    CPC分类号： C30B29/40 ,  C30B7/00 ,  C30B9/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

    摘要： A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal in a vessel space thereof, a porous member holding a metal melt by a surface tension thereof in a path through which a vapor of the alkali metal in contact with the metal mixture in the vessel space escapes to an external space, the porous member further supplying a nitrogen source gas fed from outside thereto further to the reaction vessel therethrough and through the metal melt by a pressure difference formed between the vessel space in the reaction vessel and the external space, and a heating apparatus heating the melt mixture to a crystal growth temperature.

    摘要翻译： 晶体生长装置包括在其容器空间中容纳含有碱金属和III族金属的熔融混合物的反应容器，通过其表面张力将金属熔体保持在通过其中的碱金属的蒸汽的路径中的多孔构件 与容器空间中的金属混合物接触逃逸到外部空间，多孔构件进一步向外部供给来自反应容器的氮源气体，并通过金属熔体通过在容器空间之间形成的压力差 反应容器和外部空间，以及将熔融混合物加热至晶体生长温度的加热装置。

    GROUP III NITRIDE CRYSTAL AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    GROUP III NITRIDE CRYSTAL AND MANUFACTURING METHOD THEREOF 审中-公开
    第III组氮化物晶体及其制造方法

    公开(公告)号：US20130028826A1

    公开(公告)日：2013-01-31

    申请号：US13647194

    申请日：2012-10-08

    申请人： Hirokazu IWATA ,  Seiji Sarayama ,  Akihiro Fuse

    发明人： Hirokazu IWATA ,  Seiji Sarayama ,  Akihiro Fuse

    IPC分类号： C01B21/06

    CPC分类号： C30B9/00 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/02625 ,  H01L21/02639 ,  H01L21/02647

    摘要： A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.

    摘要翻译： 含有碱金属元素的III族氮化物晶体包括基体，形成为使其至少一部分与基体接触的第一III族氮化物晶体，第一III族氮化物晶体沿着方向偏转穿透位错 不同于从基体的晶体生长方向和与第一III族氮化物晶体相邻形成的第二氮化物晶体，第二氮化物晶体具有大致垂直于晶体生长方向的晶体生长表面。

    CRYSTAL PREPARING DEVICE, CRYSTAL PREPARING METHOD, AND CRYSTAL
    9.
    发明申请
    CRYSTAL PREPARING DEVICE, CRYSTAL PREPARING METHOD, AND CRYSTAL 有权
    晶体制备装置，晶体制备方法和晶体

    公开(公告)号：US20110253034A1

    公开(公告)日：2011-10-20

    申请号：US13170431

    申请日：2011-06-28

    申请人： Hirokazu Iwata ,  Seiji Sarayama ,  Akihiro Fuse

    发明人： Hirokazu Iwata ,  Seiji Sarayama ,  Akihiro Fuse

    IPC分类号： C30B25/08 ,  C30B25/02

    CPC分类号： C30B9/10 ,  C30B17/00 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1024

    摘要： In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a molten alkali metal between the container space and an outside of the container, the molten alkali metal contacting the container space. A gas supply device supplies nitrogen gas to the container space. A heating device heats the crucible to a crystal growth temperature. The crystal preparing device is provided so that a vapor pressure of the alkali metal which evaporates from the molten alkali metal is substantially equal to a vapor pressure of the alkali metal which evaporates from the mixed molten metal.

    摘要翻译： 在晶体制备装置中，坩埚保持含有碱金属和III族金属的混合熔融金属。 容器具有与混合熔融金属接触的容器空间，并且在容器空间和容器外部之间保持熔融碱金属，熔融碱金属与容器空间接触。 气体供给装置向容器空间供给氮气。 加热装置将坩埚加热至晶体生长温度。 提供了晶体制备装置，使得从熔融碱金属蒸发的碱金属的蒸汽压基本上等于从混合的熔融金属蒸发的碱金属的蒸气压。

    CRYSTAL PREPARING DEVICE, CRYSTAL PREPARING METHOD, AND CRYSTAL
    10.
    发明申请
    CRYSTAL PREPARING DEVICE, CRYSTAL PREPARING METHOD, AND CRYSTAL 审中-公开
    晶体制备装置，晶体制备方法和晶体

    公开(公告)号：US20070215034A1

    公开(公告)日：2007-09-20

    申请号：US11684724

    申请日：2007-03-12

    申请人： Hirokazu Iwata ,  Seiji Sarayama ,  Akihiro Fuse

    发明人： Hirokazu Iwata ,  Seiji Sarayama ,  Akihiro Fuse

    IPC分类号： C30B9/00 ,  C01B21/06 ,  C30B11/00

    CPC分类号： C30B9/10 ,  C30B17/00 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1024

    摘要： In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a molten alkali metal between the container space and an outside of the container, the molten alkali metal contacting the container space. A gas supply device supplies nitrogen gas to the container space. A heating device heats the crucible to a crystal growth temperature. The crystal preparing device is provided so that a vapor pressure of the alkali metal which evaporates from the molten alkali metal is substantially equal to a vapor pressure of the alkali metal which evaporates from the mixed molten metal.

    摘要翻译： 在晶体制备装置中，坩埚保持含有碱金属和III族金属的混合熔融金属。 容器具有与混合熔融金属接触的容器空间，并且在容器空间和容器外部之间保持熔融碱金属，熔融碱金属与容器空间接触。 气体供给装置向容器空间供给氮气。 加热装置将坩埚加热至晶体生长温度。 提供了晶体制备装置，使得从熔融碱金属蒸发的碱金属的蒸汽压基本上等于从混合的熔融金属蒸发的碱金属的蒸气压。