发明授权
US09528196B2 Method and device for fabricating a layer in semiconductor material
有权
用于制造半导体材料中的层的方法和装置
- 专利标题： Method and device for fabricating a layer in semiconductor material
- 专利标题（中）： 用于制造半导体材料中的层的方法和装置
-
申请号： US14131295申请日： 2012-07-25
-
公开(公告)号： US09528196B2公开(公告)日： 2016-12-27
- 发明人: Michel Bruel
- 申请人： Michel Bruel
- 申请人地址： FR Bernin
- 专利权人： Soitec
- 当前专利权人： Soitec
- 当前专利权人地址： FR Bernin
- 代理机构： TraskBritt
- 优先权： FR1156770 20110725
- 国际申请： PCT/EP2012/064633 WO 20120725
- 国际公布： WO2013/014209 WO 20130131
- 主分类号： C30B11/14
- IPC分类号： C30B11/14 ; C30B19/10 ; H01L21/02 ; C30B19/00 ; C30B29/06 ; C30B29/08 ; C30B19/06
摘要：
The invention concerns a method for fabricating a substrate in semiconductor material characterized in that it comprises the steps of: starting from a donor substrate in a first semiconductor material at an initial temperature, contacting a surface of the donor substrate with a bath of a second semiconductor material held in the liquid state at a temperature higher than the initial temperature, the second semiconductor material being chosen so that its melting point is equal to or lower than the melting point of the first semiconductor material, solidifying the bath material on the surface to thicken the donor substrate with a solidified layer. The invention also concerns a device for implementing the method.
公开/授权文献
信息查询
IPC分类:
