公开(公告)号：US20170327968A1

公开(公告)日：2017-11-16

申请号：US15585497

申请日：2017-05-03

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  NIPPON STEEL & SUMITOMO METAL CORPORATION

Inventor： Hironori DAIKOKU ,  Kazuhiko KUSUNOKI ,  Kazuaki SEKI

IPC: C30B19/10 ,  C30B19/06 ,  C30B19/12 ,  C30B29/36

CPC classification number: C30B19/10 ,  C30B9/06 ,  C30B9/10 ,  C30B19/04 ,  C30B19/062 ,  C30B19/08 ,  C30B19/12 ,  C30B29/36

Abstract: Provided is a method for producing a SiC single crystal wherein a 4H—SiC single crystal is grown by minimizing generation of polytypes other than 4H. A method for producing a SiC single crystal by a solution process, wherein a seed crystal is 4H—SiC, and a (000-1) face of the seed crystal is a growth surface, wherein the method includes: setting a temperature at a center section of a region of a surface of a Si—C solution where the growth surface of the seed crystal contacts to 1900° C. or higher, and limiting a ΔTc/ΔTa to 1.7 or greater, wherein the ΔTc/ΔTa is a ratio of a temperature gradient ΔTc between the center section and a location 10 mm below the center section in the vertical direction, with respect to a temperature gradient ΔTa between the center section and a location 10 mm from the center section in the horizontal direction.

公开(公告)号：US09732437B2

公开(公告)日：2017-08-15

申请号：US14824811

申请日：2015-08-12

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Takayuki Shirai

IPC: H01L21/00 ,  C30B19/10 ,  C30B19/02 ,  C30B19/06 ,  C30B19/08 ,  C30B19/12 ,  C30B29/36 ,  H01L29/16 ,  H01L29/04 ,  C30B9/06 ,  C30B19/04

CPC classification number: C30B19/10 ,  C30B9/06 ,  C30B19/02 ,  C30B19/04 ,  C30B19/062 ,  C30B19/067 ,  C30B19/08 ,  C30B19/106 ,  C30B19/12 ,  C30B29/36 ,  H01L29/04 ,  H01L29/1608

Abstract: A low-resistance p-type SiC single crystal containing no inclusions is provided. This is achieved by a method for producing a SiC single crystal wherein a SiC seed crystal substrate 14 is contacted with a Si—C solution 24 having a temperature gradient in which the temperature falls from the interior toward the surface, to grow a SiC single crystal, and wherein the method comprises: using, as the Si—C solution, a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al, and making the temperature gradient y (° C./cm) in the surface region of the Si—C solution 24 satisfy the following formula (1): y≧0.15789x+21.52632 (1) wherein x represents the Al content (at %) of the Si—C solution.

公开(公告)号：US09732436B2

公开(公告)日：2017-08-15

申请号：US14405543

申请日：2013-04-16

Applicant: Takayuki Shirai ,  Katsunori Danno

Inventor： Takayuki Shirai ,  Katsunori Danno

IPC: C30B19/06 ,  C30B9/06 ,  C30B9/00 ,  C30B19/04 ,  C30B29/36 ,  C30B17/00 ,  C30B19/02 ,  C30B19/10 ,  C30B9/10 ,  C30B19/08 ,  C30B19/12

CPC classification number: C30B19/062 ,  C30B9/00 ,  C30B9/06 ,  C30B9/10 ,  C30B17/00 ,  C30B19/02 ,  C30B19/04 ,  C30B19/08 ,  C30B19/10 ,  C30B19/12 ,  C30B29/36

Abstract: Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.

公开(公告)号：US09708734B2

公开(公告)日：2017-07-18

申请号：US14648027

申请日：2013-11-11

Applicant: Hironori Daikoku ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Kazuhiko Kusunoki

Inventor： Hironori Daikoku ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Kazuhiko Kusunoki

IPC: C30B19/10 ,  C30B30/04 ,  C30B29/36 ,  C30B17/00 ,  C30B19/04 ,  C30B19/06 ,  C30B19/12

CPC classification number: C30B30/04 ,  C30B17/00 ,  C30B19/04 ,  C30B19/062 ,  C30B19/067 ,  C30B19/068 ,  C30B19/10 ,  C30B19/12 ,  C30B29/36

Abstract: The purpose of the present invention is to produce a high-quality SiC single crystal with good reproducibility while avoiding the fluctuations in the solution-contacting position of a seed crystal among production operations. A method for producing a SiC single crystal by bringing a SiC seed crystal supported by a supporting bar into contact with a solution that has been heated by high-frequency induction to thereby grow the SiC single crystal, wherein the supporting bar is born down while applying a magnetic field to the solution to thereby bring the SiC seed crystal into contact with the solution, and subsequently the application of the magnetic field is halted to grow the SiC single crystal.

公开(公告)号：US20160168749A1

公开(公告)日：2016-06-16

申请号：US15046693

申请日：2016-02-18

Applicant: NGK INSULATORS, LTD.

Inventor： Takayuki Hirao ,  Shuhei Higashihara ,  Katsuhiro Imai

IPC: C30B19/02 ,  C30B29/40

CPC classification number: C30B19/02 ,  C30B9/10 ,  C30B19/10 ,  C30B29/406

Abstract: It is produced a crystal of a nitride of a group 13 element in a melt including the group 13 element and a flux including at least an alkali metal under atmosphere comprising a nitrogen-containing gas. An amount of carbon is made 0.005 to 0.018 atomic percent, provided that 100 atomic percent is assigned to a total amount of said flux, said group 13 element and carbon in said melt.

Abstract translation: 在包含第13族元素的熔体和包含含氮气体的气氛下的至少包含碱金属的助熔剂中，生成13族元素的氮化物晶体。 碳量为0.005〜0.018原子％，只要100原子百分比为所述熔剂的总量，所述第13族元素和所述熔体中的碳。

公开(公告)号：US20150167197A1

公开(公告)日：2015-06-18

申请号：US14630607

申请日：2015-02-24

Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY

Inventor： Toru UJIHARA ,  Shunta HARADA ,  Kazuaki SEKI ,  Can ZHU ,  Mitsuya NAGAOKA

IPC: C30B19/10 ,  C30B29/36 ,  C30B19/06

CPC classification number: C30B19/103 ,  C30B9/06 ,  C30B17/00 ,  C30B19/04 ,  C30B19/068 ,  C30B19/10 ,  C30B29/06 ,  C30B29/20 ,  C30B29/36

Abstract: Provided is a crystal producing apparatus capable of producing a single crystal having excellent quality. The crystal producing apparatus for growing a single crystal on a crystal growth surface of a seed crystal in a raw material solution by a liquid phase growth method, includes: a liquid tub which accommodates a raw material solution; a crystal holding element which holds a seed crystal; and a solution flowing element which allows the raw material solution in the liquid tub to flow. Among these, the crystal holding element is able to hold the seed crystal in the liquid tub and is movable in at least a partial region on an xy plane perpendicular to a z-axis that extends in a depth direction of the liquid tub.

Abstract translation: 提供一种能够生产具有优良品质的单晶的晶体制造装置。 用于通过液相生长法在原料溶液中晶种生长表面上生长单晶的结晶产生装置包括：容纳原料溶液的液槽; 保持晶种的晶体保持元件; 以及允许液体桶中的原料溶液流动的溶液流动元件。 其中，晶体保持元件能够将晶种保持在液槽中，并且能够在垂直于在液槽的深度方向上延伸的z轴的xy平面上的至少部分区域中移动。

公开(公告)号：US20150075419A1

公开(公告)日：2015-03-19

申请号：US14483651

申请日：2014-09-11

Applicant: Toyota Jidosha Kabushiki Kaisha ,  Nippon Steel & Sumitomo Metal Corporation

Inventor： Motohisa Kado ,  Hironori Daikoku ,  Kazuhiko Kusunoki ,  Kazuhito Kamei

IPC: C30B19/10 ,  C30B29/36 ,  C30B19/06 ,  C30B19/04 ,  C30B19/12

CPC classification number: C30B19/10 ,  C30B19/04 ,  C30B19/062 ,  C30B19/12 ,  C30B29/36

Abstract: A method for producing a SiC single crystal having a large growth thickness of 10 mm or greater by a solution process is provided. This is achieved by a method for producing a SiC single crystal, wherein a SiC seed crystal substrate is contacted with a Si—C solution with a temperature gradient, in which the temperature decreases from the interior toward the surface, to grow a SiC single crystal, and wherein the temperature gradient in the surface region of the Si—C solution is increased at least once while the SiC single crystal is grown with the (000-1) face as the growth surface, to grow a SiC single crystal having a growth thickness of 10 mm or greater.

Abstract translation: 提供了一种通过溶液法生产具有大于10mm或更大生长厚度的SiC单晶的方法。 这通过SiC单晶的制造方法实现，其中SiC晶种基板与温度梯度接触，其中温度从内部朝向表面降低，以生长SiC单晶 ，并且其中Si-C溶液的表面区域中的温度梯度至少增加一次，同时以（000-1）面作为生长表面生长SiC单晶，以生长具有生长的SiC单晶 厚度为10mm以上。

公开(公告)号：US20140163717A1

公开(公告)日：2014-06-12

申请号：US14076101

申请日：2013-11-08

Applicant: Suman DAS ,  Rohan Bansal ,  Justin Gambone

Inventor： Suman DAS ,  Rohan Bansal ,  Justin Gambone

IPC: B22F3/105

CPC classification number: B22F7/062 ,  B22F3/1055 ,  B22F5/009 ,  B22F5/04 ,  B22F2003/1056 ,  B22F2003/1057 ,  B22F2007/068 ,  B23P6/007 ,  B29C64/153 ,  B29L2031/08 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  B33Y70/00 ,  B33Y80/00 ,  C30B13/24 ,  C30B13/28 ,  C30B13/32 ,  C30B19/08 ,  C30B19/10 ,  C30B29/52 ,  Y02P10/295

Abstract: Scanning Laser Epitaxy (SLE) is a layer-by-layer additive manufacturing process that allows for the fabrication of three-dimensional objects with specified microstructure through the controlled melting and re-solidification of a metal powders placed atop a base substrate. SLE can be used to repair single crystal (SX) turbine airfoils, for example, as well as the manufacture functionally graded turbine components. The SLE process is capable of creating equiaxed, directionally solidified, and SX structures. Real-time feedback control schemes based upon an offline model can be used both to create specified defect free microstructures and to improve the repeatability of the process. Control schemes can be used based upon temperature data feedback provided at high frame rate by a thermal imaging camera as well as a melt-pool viewing video microscope. A real-time control scheme can deliver the capability of creating engine ready net shape turbine components from raw powder material.

Abstract translation: 扫描激光外延（SLE）是一种逐层添加剂制造工艺，其允许通过控制熔化和再固化放置在基底顶部的金属粉末来制造具有指定微结构的三维物体。 例如，SLE可用于修复单晶（SX）涡轮机翼型，以及制造功能梯度的涡轮机部件。 SLE过程能够产生等轴，定向凝固和SX结构。 基于离线模型的实时反馈控制方案可用于创建指定的无缺陷微结构并提高过程的重复性。 可以基于通过热成像相机以及熔池观察视频显微镜在高帧速率下提供的温度数据反馈来使用控制方案。 实时控制方案可以提供从原料粉末制造发动机准备好的网状涡轮机部件的能力。

公开(公告)号：US4285911A

公开(公告)日：1981-08-25

申请号：US159535

申请日：1980-06-16

Applicant: Lucien C. De Brouckere

Inventor： Lucien C. De Brouckere

IPC: C30B19/06 ,  C30B19/10 ,  C30B19/12 ,  C30B15/30 ,  C30B35/00

CPC classification number: C30B19/12 ,  C30B19/062 ,  C30B19/10

Abstract: A magnetic epitaxial layer containing the rare earths yttrium and samarium is grown on a gadolinium-gallium substrate which moves vertically in the melt during the growth process. The substrate remains immersed in a melt containing oxides of iron and the rare earths and while moving vertically in its own plane the substrate effectuates a translation movement with each point of the substrate describing a canted 8-shaped loop.

Abstract translation: 含有稀土钇和钐的磁性外延层生长在生长过程中在熔体中垂直移动的钆镓基底上。 衬底保持浸入含有铁和稀土的氧化物的熔体中，并且在其自身平面中垂直移动时，衬底实现平移运动，衬底的每个点描述了一个倾斜的8形环。

公开(公告)号：US4273609A

公开(公告)日：1981-06-16

申请号：US954511

申请日：1978-10-25

Applicant: Gary L. Nelson ,  William A. Harvey

Inventor： Gary L. Nelson ,  William A. Harvey

IPC: C30B19/00 ,  C30B19/02 ,  C30B19/06 ,  C30B19/10 ,  C30B29/28 ,  C30B33/00 ,  H01F41/28

CPC classification number: C30B19/10 ,  C30B19/02 ,  C30B19/062 ,  C30B29/28

Abstract: A rinse process for solvating adhered primary melt residue from magnetic garnet crystals grown via liquid phase epitaxial (LPE) techniques. The rinse melt consists of a mixture having a saturation to nucleation temperature range that encompasses the primary melt's growth temperature and a solvent compound different from that used in the primary melt, which will solvate the solvent used in the primary melt and will not produce undesirable rinse melt adhesion.

Abstract translation: 用于溶解通过液相外延（LPE）技术生长的磁性石榴石晶体附着的初级熔体残余物的漂洗方法。 冲洗熔体由具有饱和至成核温度范围的混合物组成，包括初级熔体的生长温度和与初级熔体中使用的溶剂化合物不同的溶剂化合物，其将溶剂化初级熔体中使用的溶剂并且不会产生不期望的冲洗 熔融粘合。