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1.发明申请公开(公告)号：US20150191849A1
公开(公告)日：2015-07-09
申请号：US14405543
申请日：2013-04-16
Applicant: Takayuki SHIRAI , Katsunori DANNO
Inventor： Takayuki Shirai , Katsunori Danno
CPC classification number: C30B19/062 , C30B9/00 , C30B9/06 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/04 , C30B19/08 , C30B19/10 , C30B19/12 , C30B29/36
Abstract: Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.
Abstract translation: 提供一种含有低穿透位错密度和低电阻率的SiC单晶的SiC单晶锭; SiC单晶; 以及SiC单晶的制造方法。 SiC单晶锭含有晶种和通过晶种为基点的溶液工艺生长的生长晶体，含有氮含量增加的氮浓度梯度层的SiC单晶锭的生长晶体 从晶种生长的方向。
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公开(公告)号：US09732436B2
公开(公告)日：2017-08-15
申请号：US14405543
申请日：2013-04-16
Applicant: Takayuki Shirai , Katsunori Danno
Inventor： Takayuki Shirai , Katsunori Danno
IPC: C30B19/06 , C30B9/06 , C30B9/00 , C30B19/04 , C30B29/36 , C30B17/00 , C30B19/02 , C30B19/10 , C30B9/10 , C30B19/08 , C30B19/12
CPC classification number: C30B19/062 , C30B9/00 , C30B9/06 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/04 , C30B19/08 , C30B19/10 , C30B19/12 , C30B29/36
Abstract: Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.
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公开(公告)号：US20140127466A1
公开(公告)日：2014-05-08
申请号：US14128834
申请日：2011-08-02
Applicant: Katsunori Danno
Inventor： Katsunori Danno
CPC classification number: C30B11/14 , C30B9/06 , C30B29/36 , Y10T428/24488
Abstract: A SiC single crystal having high crystallinity and a large diameter is provided.A SiC single crystal comprising a seed crystal with a c-plane and a non-c-plane, and a c-plane growth portion and an enlarged diameter portion that have grown from the c-plane and the non-c-plane of the seed crystal as origins in the direction of the c-plane and the direction of the non-c-plane, wherein a continuous region free of threading dislocations is present in a peripheral portion of a plane that is parallel to the c-plane of the seed crystal, and contains the seed crystal and the enlarged diameter portion, wherein the area of the continuous region occupies 50% or more of the total area of the plane.
Abstract translation: 提供具有高结晶度和大直径的SiC单晶。 包括具有c面和非c面的晶种的SiC单晶，以及从c面和非c面生长的c面生长部和扩径部 晶种作为c面的方向和非c面的方向的起点，其中，在与平行于所述c面的平面的平面的周边部分中存在无穿孔位错的连续区域 晶种，并且包含晶种和扩大直径部分，其中连续区域的面积占面积总面积的50％以上。
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公开(公告)号：US20130059429A1
公开(公告)日：2013-03-07
申请号：US13599010
申请日：2012-08-30
Applicant: Katsunori Danno , Tsunenobu Kimoto
Inventor： Katsunori Danno , Tsunenobu Kimoto
IPC: H01L21/20
CPC classification number: H01L29/66068 , H01L21/0485
Abstract: A method of production of an SiC semiconductor device, which can form an ohmic electrode while preventing electrode metal from diffusing in the SiC single crystal substrate, includes a step of forming an ohmic electrode on an SiC substrate, characterized by forming a gettering layer with a defect density higher than the SiC substrate on that substrate to be parallel with the substrate surface, then forming the ohmic electrode the gettering layer outward from the substrate.
Abstract translation: 制造可以形成欧姆电极同时防止电极金属在SiC单晶衬底中扩散的SiC半导体器件的制造方法包括在SiC衬底上形成欧姆电极的步骤，其特征在于，形成具有 缺陷密度高于该衬底上的SiC衬底以与衬底表面平行，然后从衬底向外形成欧姆电极吸气层。
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公开(公告)号：US10094041B2
公开(公告)日：2018-10-09
申请号：US14128834
申请日：2011-08-02
Applicant: Katsunori Danno
Inventor： Katsunori Danno
Abstract: A SiC single crystal having high crystallinity and a large diameter is provided.A SiC single crystal comprising a seed crystal with a c-plane and a non-c-plane, and a c-plane growth portion and an enlarged diameter portion that have grown from the c-plane and the non-c-plane of the seed crystal as origins in the direction of the c-plane and the direction of the non-c-plane,wherein a continuous region free of threading dislocations is present in a peripheral portion of a plane that is parallel to the c-plane of the seed crystal, and contains the seed crystal and the enlarged diameter portion, wherein the area of the continuous region occupies 50% or more of the total area of the plane.
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Patent Agency Ranking
公开(公告)号：US09190482B2
公开(公告)日：2015-11-17
申请号：US13599010
申请日：2012-08-30
Applicant: Katsunori Danno , Tsunenobu Kimoto
Inventor： Katsunori Danno , Tsunenobu Kimoto
CPC classification number: H01L29/66068 , H01L21/0485
Abstract: A method of production of an SiC semiconductor device, which can form an ohmic electrode while preventing electrode metal from diffusing in the SiC single crystal substrate, includes a step of forming an ohmic electrode on an SiC substrate, characterized by forming a gettering layer with a defect density higher than the SiC substrate on that substrate to be parallel with the substrate surface, then forming the ohmic electrode the gettering layer outward from the substrate.
Abstract translation: 制造可以形成欧姆电极同时防止电极金属在SiC单晶衬底中扩散的SiC半导体器件的制造方法包括在SiC衬底上形成欧姆电极的步骤，其特征在于，形成具有 缺陷密度高于该衬底上的SiC衬底以与衬底表面平行，然后从衬底向外形成欧姆电极吸气层。
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公开(公告)号：US20130042802A1
公开(公告)日：2013-02-21
申请号：US13383265
申请日：2009-07-17
Applicant: Katsunori Danno , Akinori Seki , Hiroaki Saitoh , Kawai Yoichiro
Inventor： Katsunori Danno , Akinori Seki , Hiroaki Saitoh , Kawai Yoichiro
IPC: C30B19/08
Abstract: The present invention provides a method of production of SiC single crystal using the solution method which prevents the formation of defects due to causing a seed crystal to touch the melt for seed touch, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal which causes an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt in the state where the C is not yet saturated.
Abstract translation: 本发明提供一种使用防止由于晶种接触熔融物进行种子接触而导致的缺陷形成的溶液法的SiC单晶的制造方法，从而导致Si单晶的生长缺陷密度降低。 本发明的方法是一种SiC单晶的制造方法，其使SiC晶种与石墨坩埚中含有Si的熔体接触，从而使SiC单晶在SiC晶种上生长，其特征在于， SiC晶种在C尚未饱和的状态下接触熔体。
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公开(公告)号：US20120118221A1
公开(公告)日：2012-05-17
申请号：US13383604
申请日：2009-07-17
Applicant: Katsunori Danno , Akinori Seki , Hiroaki Saitoh , Yoichiro Kawai
Inventor： Katsunori Danno , Akinori Seki , Hiroaki Saitoh , Yoichiro Kawai
IPC: C30B19/12
Abstract: The present invention provides a method of production of an SiC single crystal using the solution method which prevents the formation of defects due to seed tough, i.e., causing a seed crystal to touch the melt, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal by causing an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt, then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.
Abstract translation: 本发明提供一种使用这种溶液法制造SiC单晶的方法，该方法防止由于种子韧性而形成的缺陷，即使晶种接触熔体，从而使Si单晶的生长减少 缺陷密度。 本发明的方法是通过使SiC晶种与石墨坩埚中含有Si的熔体接触从而使SiC单晶在SiC晶种上生长而制造SiC单晶的方法，其特征在于， SiC晶体接触熔体，然后使熔体温度上升一次至高于触摸时温度的温度，并且还高于引起生长的温度。
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9.发明授权Method for manufacturing N-type SiC single crystal by solution growth using a mixed gas atmosphere 有权使用混合气体气氛通过溶液生长制造N型SiC单晶的方法公开(公告)号：US09512540B2
公开(公告)日：2016-12-06
申请号：US13883350
申请日：2011-11-04
Applicant: Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Kouji Moriguchi , Nobuhiro Okada , Katsunori Danno , Hironori Daikoku
Inventor： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Kouji Moriguchi , Nobuhiro Okada , Katsunori Danno , Hironori Daikoku
CPC classification number: C30B15/20 , C30B15/10 , C30B15/30 , C30B15/36 , C30B17/00 , C30B19/02 , C30B29/36
Abstract: A method for manufacturing an n-type SiC single crystal, enables the suppression of the variation in nitrogen concentration among a plurality of n-type SiC single crystal ingots manufactured. A method includes the steps of: providing a manufacturing apparatus (100) including a chamber (1) having an area in which a crucible (7) is to be disposed; heating the area in which the crucible (7) is to be disposed and evacuating the gas in the chamber (1); filling, after the evacuation, the chamber (1) with a mixed gas containing a noble gas and nitrogen gas; heating and melting a starting material housed in the crucible (7) disposed in the area to produce a SiC solution (8) containing silicon and carbon; and immersing a SiC seed crystal into the SiC solution under the mixed gas atmosphere to grow an n-type SiC single crystal on the SiC seed crystal.
Abstract translation: 制造n型SiC单晶的方法能够抑制制造的多个n型SiC单晶锭中的氮浓度的变化。 一种方法包括以下步骤：提供一种制造装置（100），该制造装置（100）包括具有坩埚（7）将被设置的区域的腔室（1） 加热要安置坩埚（7）的区域并抽空腔室（1）中的气体; 在排气之后用包含惰性气体和氮气的混合气体填充室（1）; 加热和熔化容纳在所述区域中的坩埚（7）中的原料以产生含有硅和碳的SiC溶液（8）; 并在混合气体气氛下将SiC晶种浸入SiC溶液中，以在SiC晶种上生长n型SiC单晶。
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公开(公告)号：US20150064882A1
公开(公告)日：2015-03-05
申请号：US14118095
申请日：2012-05-04
Applicant: Katsunori Danno , Hiroaki Saitoh , Akinori Seki , Tsunenobu Kimoto
Inventor： Katsunori Danno , Hiroaki Saitoh , Akinori Seki , Tsunenobu Kimoto
IPC: H01L29/16 , H01L21/322 , H01L21/324 , H01L21/02 , H01L21/04
CPC classification number: H01L29/1608 , H01L21/02529 , H01L21/046 , H01L21/263 , H01L21/26506 , H01L21/322 , H01L21/324 , H01L29/868 , H01L29/872
Abstract: A process for producing a semiconductor device includes: forming an SiC epitaxial layer on an SiC substrate; implanting the epitaxial layer with ions; forming a gettering layer having a higher defect density than a defect density of the SiC substrate; and carrying out a heat treatment on the epitaxial layer. The semiconductor device includes an SiC substrate, an SiC epitaxial layer formed on the SiC substrate, and a gettering layer having a higher defect density than a defect density of the SiC substrate.
Abstract translation: 一种制造半导体器件的方法包括：在SiC衬底上形成SiC外延层; 用离子注入外延层; 形成具有比SiC衬底的缺陷密度更高的缺陷密度的吸杂层; 并在外延层上进行热处理。 半导体器件包括SiC衬底，形成在SiC衬底上的SiC外延层以及具有比SiC衬底的缺陷密度更高的缺陷密度的吸杂层。
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