A method for manufacturing an n-type SiC single crystal, enables the suppression of the variation in nitrogen concentration among a plurality of n-type SiC single crystal ingots manufactured. A method includes the steps of: providing a manufacturing apparatus (100) including a chamber (1) having an area in which a crucible (7) is to be disposed; heating the area in which the crucible (7) is to be disposed and evacuating the gas in the chamber (1); filling, after the evacuation, the chamber (1) with a mixed gas containing a noble gas and nitrogen gas; heating and melting a starting material housed in the crucible (7) disposed in the area to produce a SiC solution (8) containing silicon and carbon; and immersing a SiC seed crystal into the SiC solution under the mixed gas atmosphere to grow an n-type SiC single crystal on the SiC seed crystal.