Crystalline layer growth method
    1.
    发明授权
    Crystalline layer growth method 失效
    结晶层生长法

    公开(公告)号:US4247360A

    公开(公告)日:1981-01-27

    申请号:US916335

    申请日:1978-06-15

    CPC classification number: C30B19/12 C30B19/062 C30B19/10

    Abstract: A magnetic epitaxial layer containing the rare earths yttrium and samarium is grown on a gadolinium-gallium substrate which moves vertically in the melt during the growth process. The substrate remains immersed in a melt containing oxides of iron and the rare earths and while moving vertically in its own plane the substrate effectuates a translation movement with each point of the substrate describing a canted 8-shaped loop.

    Abstract translation: 含有稀土钇和钐的磁性外延层生长在生长过程中在熔体中垂直移动的钆镓基底上。 衬底保持浸入含有铁和稀土的氧化物的熔体中,并且在其自身平面中垂直移动时,衬底实现平移运动,衬底的每个点描述了一个倾斜的8形环。

    Device for growing a crystalline layer on a substrate
    3.
    发明授权
    Device for growing a crystalline layer on a substrate 失效
    用于在基底上生长晶体层的装置

    公开(公告)号:US4285911A

    公开(公告)日:1981-08-25

    申请号:US159535

    申请日:1980-06-16

    CPC classification number: C30B19/12 C30B19/062 C30B19/10

    Abstract: A magnetic epitaxial layer containing the rare earths yttrium and samarium is grown on a gadolinium-gallium substrate which moves vertically in the melt during the growth process. The substrate remains immersed in a melt containing oxides of iron and the rare earths and while moving vertically in its own plane the substrate effectuates a translation movement with each point of the substrate describing a canted 8-shaped loop.

    Abstract translation: 含有稀土钇和钐的磁性外延层生长在生长过程中在熔体中垂直移动的钆镓基底上。 衬底保持浸入含有铁和稀土的氧化物的熔体中,并且在其自身平面中垂直移动时,衬底实现平移运动,衬底的每个点描述了一个倾斜的8形环。

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