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    Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same
    4.
    发明授权
    Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same 有权
    多晶氮化镓自支撑基板和使用其的发光元件

    公开(公告)号：US09543473B2

    公开(公告)日：2017-01-10

    申请号：US15072745

    申请日：2016-03-17

    申请人： NGK INSULATORS, LTD.

    发明人： Morimichi Watanabe ,  Jun Yoshikawa ,  Yoshitaka Kuraoka ,  Tsutomu Nanataki

    IPC分类号： H01L33/18 ,  H01L33/32 ,  H01L33/00 ,  H01L33/16 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B29/40 ,  C30B25/18 ,  C30B28/04 ,  C30B29/60 ,  C30B9/00 ,  C30B25/20

    CPC分类号： H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

    摘要： Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.

    摘要翻译： 本发明提供一种由大致垂直于基板的方向具有特定结晶取向的GaN系单晶粒构成的自支撑多晶GaN衬底。 通过在基板表面上的EBSD分析的反极图映射确定的单个GaN基单晶晶粒的晶体取向以特定晶体取向倾斜角分布，平均倾斜角为1至10°。 还提供了一种包括自支撑基板和发光功能层的发光器件，该发光功能层具有至少一层由半导体单晶晶粒构成的层，所述至少一层具有大致垂直于 底物。 本发明使得可以提供在衬底表面上具有降低的缺陷密度的自支撑多晶GaN衬底，并且提供具有高发光效率的发光器件。

    Process for producing rods or blocks of semiconductor material and an apparatus for carrying out the process
    5.
    发明授权
    Process for producing rods or blocks of semiconductor material and an apparatus for carrying out the process 失效
    用于制造半导体材料的棒或块的方法和用于执行该过程的装置

    公开(公告)号：US5492079A

    公开(公告)日：1996-02-20

    申请号：US270433

    申请日：1994-07-05

    申请人： Joachim Geissler ,  Ulrich Angres

    发明人： Joachim Geissler ,  Ulrich Angres

    IPC分类号： C30B15/00 ,  C30B15/08 ,  C30B15/14 ,  C30B28/04 ,  H01L21/208

    CPC分类号： C30B15/08 ,  C30B15/14 ,  Y10S117/91

    摘要： The process includes processing a molten phase of semiconductor material ering a solid phase of the material and having a free surface opposite this solid phase, into which, during the crystallization procedure, energy is radiated and material is fed in in granular form, which material floats and is melted. As a result, at the opposite solid/liquid interface, material grows on the solid phase which is drawn downwards in accordance with the growth rate. The process allows mono- or polycrystalline rods or blocks to be obtained. The main advantages of the process are that it can be carried out without melting vessels, it is possible to use granular material, and the energy balance is favorable because of the small amounts of melt.

    摘要翻译： 该方法包括处理覆盖材料的固相的半导体材料的熔融相，并且具有与该固相相反的自由表面，在结晶过程期间，能量被辐射并且材料以颗粒形式进料，该材料浮动 并融化。 结果，在相对的固/液界面处，材料在固相上生长，其根据生长速率被向下拉。 该方法允许获得单晶或多晶棒或块。 该方法的主要优点是可以在没有熔体的情况下进行，可以使用颗粒状材料，并且由于少量的熔体，能量平衡是有利的。

    Metal-interferon-alpha crystals
    6.
    发明授权
    Metal-interferon-alpha crystals 失效
    金属 - 干扰素α晶体

    公开(公告)号：US5441734A

    公开(公告)日：1995-08-15

    申请号：US24330

    申请日：1993-02-25

    申请人： Paul Reichert ,  Charles McNemar ,  Nagamani Nagabhushan ,  Tattanahalli L. Nagabhushan ,  Stephen Tindall ,  Alan Hruza

    发明人： Paul Reichert ,  Charles McNemar ,  Nagamani Nagabhushan ,  Tattanahalli L. Nagabhushan ,  Stephen Tindall ,  Alan Hruza

    IPC分类号： A61K38/00 ,  A61K38/21 ,  C07K14/56 ,  C30B7/00 ,  C30B28/04 ,  C30B29/58 ,  A61K37/66 ,  A61K9/14 ,  C07K15/26

    CPC分类号： C07K14/56 ,  A61K38/212 ,  C30B29/58 ,  C30B7/00

    摘要： The present invention provides for crystalline zinc-interferon alfa-2 (IFN .alpha.-2) having a monoclinic morphology. The present invention further provides for crystalline cobalt-IFN .alpha.-2, crystalline calcium-IFN .alpha.-2, and crystalline IFN .alpha.-2 having a serum half-life of at least about 12 hours when injected into a primate. The present invention further provides for a method for producing a crystalline IFN .alpha.-2 comprising forming a soluble metal-IFN .alpha.-2 complex, and equilibrating the soluble metal-IFN .alpha.-2 complex in solution with an acetate salt of the metal under conditions that will cause the metal-IFN .alpha.-2 solution to become supersaturated and form crystalline metal-IFN .alpha.-2. The present invention also includes crystalline metal-alfa interferon having monoclinic, plate and needle morphologies.

    摘要翻译： 本发明提供具有单斜晶形的结晶性锌 - 干扰素α-2（IFNα-2）。 本发明还提供了当注射到灵长类动物中时，具有至少约12小时的血清半衰期的结晶钴-IFFα-2，结晶性钙-IFNα2和结晶IFNα-2。 本发明进一步提供了一种用于产生结晶IFNα-2的方法，包括形成可溶性金属-IFMα-2复合物，并在条件下用金属的乙酸盐平衡溶液中的可溶性金属-IFMα-2复合物 这将导致金属-IFNα-2溶液变得过饱和并形成结晶金属-IFNα-2。 本发明还包括具有单斜晶系，板和针形态的结晶金属-α干扰素。

    Method For Producing a Crystalline Film on a Substrate Surface
    8.
    发明公开
    Method For Producing a Crystalline Film on a Substrate Surface 审中-公开

    公开(公告)号：US20230279582A1

    公开(公告)日：2023-09-07

    申请号：US18129829

    申请日：2023-04-01

    申请人： MATRIX SENSORS, INC.

    发明人： David K Britt ,  Paul R Wilkinson ,  Steven Yamamoto

    IPC分类号： C30B28/04 ,  C08J5/18 ,  C07F15/04 ,  G01G3/16 ,  C30B29/58 ,  C07F9/00

    CPC分类号： C30B28/04 ,  C08J5/18 ,  C07F15/04 ,  G01G3/165 ,  C30B29/58 ,  C07F9/00

    摘要： An apparatus and method is provided for coating a surface of a material with a film of porous coordination polymer. A first substrate having a first surface to be coated is positioned in a processing chamber such that the first surface is placed in a substantially opposing relationship to a second surface. In some embodiments, the second surface is provided by a wall of the processing chamber, and in other embodiments the second surface is provided by a second substrate to be coated. The first substrate is held such that a gap exists between the first and second surfaces, and the gap is filled with at least one reaction mixture comprising reagents sufficient to form the crystalline film on at least the first surface. A thin gap (e.g., having a thickness less than 2 mm) between the first and second surfaces is effective for producing a high quality film having a thickness less than 100 μm. Confining the volume of the reaction mixture to a thin layer adjacent the substrate surface significantly reduces problems with sedimentation and concentration control. In some embodiments, the size, shape, or average thickness of the gap is adjusted during formation of the film in response to feedback from at least one film growth monitor.