公开(公告)号：US5492079A

公开(公告)日：1996-02-20

申请号：US270433

申请日：1994-07-05

申请人： Joachim Geissler ,  Ulrich Angres

发明人： Joachim Geissler ,  Ulrich Angres

IPC分类号： C30B15/00 ,  C30B15/08 ,  C30B15/14 ,  C30B28/04 ,  H01L21/208

CPC分类号： C30B15/08 ,  C30B15/14 ,  Y10S117/91

摘要： The process includes processing a molten phase of semiconductor material ering a solid phase of the material and having a free surface opposite this solid phase, into which, during the crystallization procedure, energy is radiated and material is fed in in granular form, which material floats and is melted. As a result, at the opposite solid/liquid interface, material grows on the solid phase which is drawn downwards in accordance with the growth rate. The process allows mono- or polycrystalline rods or blocks to be obtained. The main advantages of the process are that it can be carried out without melting vessels, it is possible to use granular material, and the energy balance is favorable because of the small amounts of melt.

摘要翻译： 该方法包括处理覆盖材料的固相的半导体材料的熔融相，并且具有与该固相相反的自由表面，在结晶过程期间，能量被辐射并且材料以颗粒形式进料，该材料浮动 并融化。 结果，在相对的固/液界面处，材料在固相上生长，其根据生长速率被向下拉。 该方法允许获得单晶或多晶棒或块。 该方法的主要优点是可以在没有熔体的情况下进行，可以使用颗粒状材料，并且由于少量的熔体，能量平衡是有利的。

公开(公告)号：US4447289A

公开(公告)日：1984-05-08

申请号：US397581

申请日：1982-07-12

申请人： Joachim Geissler ,  Dieter Helmreich

发明人： Joachim Geissler ,  Dieter Helmreich

IPC分类号： C30B15/00 ,  C30B15/06 ,  C30B15/36 ,  C30B29/64 ,  C30B33/00 ,  H01L21/02 ,  H01L21/208 ,  H01L31/18 ,  C30B11/02 ,  C30B15/12

CPC分类号： H01L31/1804 ,  C30B15/06 ,  C30B15/36 ,  C30B33/00 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/914 ,  Y10S117/915

摘要： The invention provides a process for the manufacture of coarsely crystalline to monocrystalline sheets and/or plates of semiconductor material of preferred orientation. A meniscus of molten semiconductor material comes in contact with a moving, cooler substrate of the same coarsely crystalline to monocrystalline semiconductor material, during which, while transferring the preferred orientation, a thin sheet of the semiconductor material is pulled onto the substrate and, after cooling, becomes detached from the substrate. The substrate can be reused as often as desired.

摘要翻译： 本发明提供了一种用于制造优选取向的半晶体到单晶片和/或半导体材料的板的方法。 熔融半导体材料的弯液面与相同的粗晶体到单晶半导体材料的移动的较冷的衬底接触，在此期间，在转移优选的取向的同时，半导体材料的薄片被拉到衬底上，并且在冷却之后 ，从基板脱离。 可以根据需要经常重复使用基板。

公开(公告)号：US4759887A

公开(公告)日：1988-07-26

申请号：US862006

申请日：1986-05-12

申请人： Joachim Geissler ,  Deiter Helmreich ,  Roland Luptovits ,  Maximilian Semmler ,  Burkhard Walter

发明人： Joachim Geissler ,  Deiter Helmreich ,  Roland Luptovits ,  Maximilian Semmler ,  Burkhard Walter

IPC分类号： B28B1/54 ,  C01B33/02 ,  C30B15/00 ,  B29B9/08

CPC分类号： C30B15/00 ,  C01B33/02

摘要： A process for the manufacture of shaped bodies from silicon granulates for producing silicon melts includes first incipiently melting silicon grains on their surfaces, so that they bond with their neighbors in the process and, after solidifying, form a porous compound shaped body which only then may be melted completely. Such compound shaped bodies can be manufactured continuously or semi-continuously and converted without difficulty by a subsequent step into the molten state. An apparatus for producing shaped bodies is also provided which preferably employs an electron beam, to supply energy to incipiently melt the granulate.

摘要翻译： 用于制造硅熔融物的硅颗粒的成形体的制造方法包括首先在其表面上初始地熔化硅晶粒，使得它们在该过程中与其邻近物结合，并且在固化之后形成多孔化合物形状体， 完全融化 这种复合成型体可以连续或半连续地制造，并且在随后的步骤进入熔融状态时没有困难地转化。 还提供了一种用于生产成形体的装置，其优选地使用电子束来提供能量以便使颗粒初始地熔化。

公开(公告)号：US4028523A

公开(公告)日：1977-06-07

申请号：US639127

申请日：1975-12-09

申请人： Peter Anderl ,  Monika Geffcken ,  Joachim Geissler

发明人： Peter Anderl ,  Monika Geffcken ,  Joachim Geissler

IPC分类号： B23K15/00 ,  B23K15/08 ,  B23K26/00 ,  B41C1/04 ,  B41C1/05 ,  H01J37/302 ,  H01J37/31 ,  B23K9/00

CPC分类号： B41C1/05 ,  B23K15/00 ,  H01J37/302 ,  H01J37/31

摘要： The specification describes an energy-beam engraving method for producing depressions of different dimensions in a surface. In the method depressions with smaller and larger dimensions are produced by shorter and longer action of an energy beam with a substantially constant power. Besides the duration of action of the energy-beam on a predetermined range of the surface to be engraved simultaneously its focussing is so varied that the focus plane is closer to the surface in the case of smaller depressions than with larger depressions.

摘要翻译： 该说明书描述了用于在表面中产生不同尺寸的凹陷的能量束雕刻方法。 在方法中，具有较小和较大尺寸的凹陷通过具有基本恒定功率的能量束的较短和较长的作用产生。 除了能量束在要同时雕刻的表面的预定范围上的作用持续时间之外，其聚焦是这样变化的，使得在凹陷比凹陷较小的情况下，聚焦平面更靠近表面。