公开(公告)号：US09487885B2

公开(公告)日：2016-11-08

申请号：US14106657

申请日：2013-12-13

申请人： TIVRA CORPORATION

发明人： Francisco Machuca ,  Indranil De

IPC分类号： C30B25/18 ,  C30B29/42 ,  C30B23/02 ,  C30B29/40 ,  H01L33/00

CPC分类号： C30B25/183 ,  C30B23/025 ,  C30B25/186 ,  C30B29/406 ,  H01L33/0079

摘要： A process for separating a substrate from an epitaxial layer comprises forming a multilayer substrate comprising a substrate, a lattice matching layer and an epitaxial layer. The method further comprises etching the lattice matching layer by one of a liquid or a vapor phase acid. The lattice matching layer is a metal alloy between the substrate and the epitaxial layer and serves as an etching release layer. The substrate can also be separated from an epitaxial layer by laser lift off process. The process comprises forming a multilayer substrate comprising a substrate, a lattice matching layer and an epitaxial layer, directing laser light at the lattice matching layer, maintaining the laser light on the lattice matching layer for a sufficient period of time so that it is absorbed by free electrons in the lattice matching layer to allow decomposition of the lattice matching layer.

摘要翻译： 用于从外延层分离衬底的方法包括形成包括衬底，晶格匹配层和外延层的多层衬底。 该方法还包括通过液相或气相酸之一蚀刻晶格匹配层。 晶格匹配层是在基板和外延层之间的金属合金，并且用作蚀刻释放层。 衬底也可以通过激光剥离工艺与外延层分离。 该方法包括形成包括基板，晶格匹配层和外延层的多层基板，将激光引导到晶格匹配层，将激光保持在晶格匹配层上足够的时间段，使其被 在晶格匹配层中的自由电子可以分解晶格匹配层。

公开(公告)号：US08956952B2

公开(公告)日：2015-02-17

申请号：US13794327

申请日：2013-03-11

申请人： Tivra Corporation

发明人： Francisco Machuca ,  Indranil De

IPC分类号： H01L21/46 ,  H01L21/02 ,  C30B19/12 ,  C30B1/12 ,  C30B23/02 ,  C30B30/02 ,  C30B25/02 ,  C30B23/06 ,  C30B23/08 ,  C30B11/14 ,  C30B25/06 ,  C30B13/34 ,  C30B1/02 ,  H01L29/205 ,  C30B15/00 ,  C30B29/40 ,  C30B25/18

CPC分类号： C30B29/40 ,  C30B1/02 ,  C30B1/12 ,  C30B11/14 ,  C30B13/34 ,  C30B15/007 ,  C30B19/12 ,  C30B23/02 ,  C30B23/025 ,  C30B23/066 ,  C30B23/08 ,  C30B25/02 ,  C30B25/06 ,  C30B25/183 ,  C30B29/403 ,  C30B29/52 ,  C30B30/02 ,  H01L21/0237 ,  H01L21/02436 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L29/205

摘要： A multilayer substrate structure comprises a substrate, a thermal matching layer formed on the substrate and a lattice matching layer above the thermal matching layer. The thermal matching layer includes at least one of molybdenum, molybdenum-copper, mullite, sapphire, graphite, aluminum-oxynitrides, silicon, silicon carbide, zinc oxides, and rare earth oxides. The lattice matching layer includes a first chemical element and a second chemical element to form an alloy. The first and second chemical element has similar crystal structures and chemical properties. The coefficient of thermal expansion of the thermal matching layer and the lattice parameter of the lattice matching layer are both approximately equal to that of a member of group III-V compound semiconductors. The lattice constant of the lattice matching layer is approximately equal to that of a member of group III-V compound semiconductor.

摘要翻译： 多层衬底结构包括衬底，形成在衬底上的热匹配层和在热匹配层上方的晶格匹配层。 热匹配层包括钼，钼 - 铜，莫来石，蓝宝石，石墨，铝 - 氧氮化物，硅，碳化硅，氧化锌和稀土氧化物中的至少一种。 晶格匹配层包括第一化学元素和第二化学元素以形成合金。 第一和第二化学元素具有相似的晶体结构和化学性质。 热匹配层的热膨胀系数和晶格匹配层的晶格参数大致等于III-V族化合物半导体的成员的热膨胀系数。 晶格匹配层的晶格常数近似等于III-V族化合物半导体的晶格常数。

公开(公告)号：US20190044029A1

公开(公告)日：2019-02-07

申请号：US16155825

申请日：2018-10-09

申请人： Tivra Corporation

发明人： Francisco Machuca ,  Robert Weiss

IPC分类号： H01L33/32 ,  H01L29/423 ,  H01L29/04 ,  H01L29/10 ,  H01L21/02 ,  H01L33/12 ,  H01L33/00 ,  H01L29/778 ,  H01L23/36 ,  H01L29/20 ,  H01L29/417 ,  H01L33/40

摘要： A multilayer structure comprising a crystal matching layer deposited on a substrate. The crystal matching layer is capable of being used as an ohmic contact, thermal heat sink, and reflective layer. The unique properties of the crystal matching layer allows for the reduction of size of semiconductor devices, a reduction in the fabrication time of semiconductor devices, high current capabilities, high voltage standoff capabilities, and other advantages.

公开(公告)号：US20180158672A1

公开(公告)日：2018-06-07

申请号：US15876048

申请日：2018-01-19

申请人： Tivra Corporation

发明人： Francisco Machuca

IPC分类号： H01L21/02 ,  H01L23/373

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02444 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02617 ,  H01L23/36 ,  H01L23/3738 ,  H01L29/045 ,  H01L29/10 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： A multilayer semiconductor structure including at least in part a substrate and an III-N film layer. The substrate's constant of thermal expansion being substantially matched to the III-N film's constant of thermal expansion. The multilayer semiconductor structure may also include a crystal matching layer that has a lattice constant that substantially matches the lattice of constant of the III-N film. By not relying on the substrate for lattice matching the III-N film, the multilayer structure allows greater flexibility in the selection of an applicable substrate.

公开(公告)号：US20150167198A1

公开(公告)日：2015-06-18

申请号：US14106657

申请日：2013-12-13

申请人： TIVRA CORPORATION

发明人： Francisco Machuca ,  Indranil De

IPC分类号： C30B25/18 ,  C30B25/10 ,  C30B25/06 ,  C30B23/08 ,  C30B29/42 ,  C30B29/52 ,  C30B29/04 ,  C30B29/02 ,  C30B23/02 ,  C30B29/40

CPC分类号： C30B25/183 ,  C30B23/025 ,  C30B25/186 ,  C30B29/406 ,  H01L33/0079

摘要： A process for separating a substrate from an epitaxial layer comprises forming a multilayer substrate comprising a substrate, a lattice matching layer and an epitaxial layer. The method further comprises etching the lattice matching layer by one of a liquid or a vapor phase acid. The lattice matching layer is a metal alloy between the substrate and the epitaxial layer and serves as an etching release layer. The substrate can also be separated from an epitaxial layer by laser lift off process. The process comprises forming a multilayer substrate comprising a substrate, a lattice matching layer and an epitaxial layer, directing laser light at the lattice matching layer, maintaining the laser light on the lattice matching layer for a sufficient period of time so that it is absorbed by free electrons in the lattice matching layer to allow decomposition of the lattice matching layer.

摘要翻译： 用于从外延层分离衬底的方法包括形成包括衬底，晶格匹配层和外延层的多层衬底。 该方法还包括通过液相或气相酸之一蚀刻晶格匹配层。 晶格匹配层是在基板和外延层之间的金属合金，并且用作蚀刻释放层。 衬底也可以通过激光剥离工艺与外延层分离。 该方法包括形成包括基板，晶格匹配层和外延层的多层基板，将激光引导到晶格匹配层，将激光保持在晶格匹配层上足够的时间段，使其被 在晶格匹配层中的自由电子可以分解晶格匹配层。

公开(公告)号：US20160380154A1

公开(公告)日：2016-12-29

申请号：US15194517

申请日：2016-06-27

申请人： Tivra Corporation

发明人： Francisco Machuca ,  Robert Weiss

IPC分类号： H01L33/32 ,  H01L33/40 ,  H01L33/00 ,  H01L21/02 ,  H01L29/778 ,  H01L33/64 ,  H01L23/367 ,  H01L29/66 ,  H01L33/12 ,  H01L29/20

CPC分类号： H01L33/32 ,  H01L21/02491 ,  H01L21/02609 ,  H01L23/36 ,  H01L29/04 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/7788 ,  H01L29/7789 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/405

摘要： A multilayer structure comprising a crystal matching layer deposited on a substrate. The crystal matching layer is capable of being used as an ohmic contact, thermal heat sink, and reflective layer. The unique properties of the crystal matching layer allows for the reduction of size of semiconductor devices, a reduction in the fabrication time of semiconductor devices, high current capabilities, high voltage standoff capabilities, and other advantages.

摘要翻译： 一种包含沉积在基底上的晶体匹配层的多层结构。 晶体匹配层能够用作欧姆接触，热散热器和反射层。 晶体匹配层的独特性质允许减小半导体器件的尺寸，减少半导体器件的制造时间，高电流能力，高电压隔离能力以及其他优点。

公开(公告)号：US20160380045A1

公开(公告)日：2016-12-29

申请号：US15161111

申请日：2016-05-20

申请人： Tivra Corporation

发明人： Francisco Machuca ,  Robert Weiss

IPC分类号： H01L29/04 ,  H01L21/02 ,  H01L29/20

CPC分类号： H01L33/32 ,  H01L21/02491 ,  H01L21/02609 ,  H01L23/36 ,  H01L29/04 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/7788 ,  H01L29/7789 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/405

摘要： A multilayer semiconductor structure including at least in part a substrate and an III-N film layer. The substrate's constant of thermal expansion being substantially matched to the III-N film's constant of thermal expansion. The multilayer semiconductor structure may also include a crystal matching layer that has a lattice constant that substantially matches the lattice of constant of the III-N film. By not relying on the substrate for lattice matching the III-N film, the multilayer structure allows greater flexibility in the selection of an applicable substrate.

摘要翻译： 至少部分地包括衬底和III-N膜层的多层半导体结构。 基板的热膨胀常数与III-N膜的热膨胀常数基本一致。 多层半导体结构还可以包括具有与III-N膜的常数的格子基本匹配的晶格常数的晶体匹配层。 通过不依赖于用于晶格匹配III-N膜的衬底，多层结构在选择适用衬底时允许更大的灵活性。

公开(公告)号：US20130333611A1

公开(公告)日：2013-12-19

申请号：US13794285

申请日：2013-03-11

申请人： TIVRA CORPORATION

发明人： Indranil De ,  Francisco Machuca

IPC分类号： C30B29/40 ,  C30B23/06 ,  C30B23/08 ,  C30B25/02 ,  C30B25/06 ,  C30B19/12 ,  C30B13/34 ,  C30B11/14 ,  C30B1/02 ,  C30B1/12 ,  C30B25/18 ,  C30B30/02 ,  C30B23/02 ,  C30B15/00

CPC分类号： C30B29/40 ,  C30B1/02 ,  C30B1/12 ,  C30B11/14 ,  C30B13/34 ,  C30B15/007 ,  C30B19/12 ,  C30B23/02 ,  C30B23/025 ,  C30B23/066 ,  C30B23/08 ,  C30B25/02 ,  C30B25/06 ,  C30B25/183 ,  C30B29/403 ,  C30B29/52 ,  C30B30/02 ,  H01L21/0237 ,  H01L21/02436 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L29/205

摘要： A lattice matching layer for use in a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature. The hexagonal close-packed structure of the first chemical element has a first lattice parameter. The hexagonal close-packed structure of the second chemical element has a second lattice parameter. The second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature. A lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.

摘要翻译： 用于多层衬底结构的晶格匹配层包括晶格匹配层。 晶格匹配层包括第一化学元素和第二化学元素。 第一和第二化学元素中的每一个在室温下具有六方密堆积结构，其在高于室温的α-β相转变温度下转变为体心立方结构。 第一化学元素的六方密堆积结构具有第一晶格参数。 第二化学元素的六方密堆积结构具有第二晶格参数。 第二化学元素与第一化学元素混溶，以在室温下形成具有六方密堆积结构的合金。 合金的晶格常数近似等于III-V族化合物半导体的晶格常数。