公开(公告)号：US20240352622A1

公开(公告)日：2024-10-24

申请号：US18762896

申请日：2024-07-03

申请人： Wolfspeed, Inc.

发明人： Yuri Khlebnikov ,  Varad R. Sakhalkar ,  Caleb A. Kent ,  Valeri F. Tsvetkov ,  Michael J. Paisley ,  Oleksandr Kramarenko ,  Matthew David Conrad ,  Eugene Deyneka ,  Steven Griffiths ,  Simon Bubel ,  Adrian R. Powell ,  Robert Tyler Leonard ,  Elif Balkas ,  Jeffrey C. Seaman

IPC分类号： C30B29/36 ,  C30B23/02 ,  C30B23/06 ,  C30B31/22 ,  C30B33/02 ,  H01L21/04

CPC分类号： C30B29/36 ,  C30B23/02 ,  C30B23/063 ,  C30B23/066 ,  C30B31/22 ,  C30B33/02 ,  H01L21/0475

摘要： Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

公开(公告)号：US20240263346A1

公开(公告)日：2024-08-08

申请号：US18422958

申请日：2024-01-25

申请人： SiCrystal GmbH

发明人： Bernhard ECKER ,  Ralf MÜLLER ,  Philipp SCHUH ,  Matthias STOCKMEIER ,  Michael VOGEL

IPC分类号： C30B23/06 ,  C30B29/36

CPC分类号： C30B23/066 ,  C30B29/36

摘要： The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing a bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. A sublimation system for growing at least one single crystal of a semiconductor material by means of a sublimation growing process comprises a crucible (102) having a longitudinal axis (120) and comprising a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108); a heating system being formed to generate an irregular temperature field around a circumference of the crucible (102) and/or along the longitudinal axis of the crucible (102); a thermal insulation unit (117) at least partly surrounding the crucible (102), wherein the thermal insulation unit (117) has a radially and/or axially asymmetric form to compensate the irregular temperature field.

公开(公告)号：US12046467B2

公开(公告)日：2024-07-23

申请号：US17150944

申请日：2021-01-15

申请人： Swift Solar Inc.

发明人： Kevin Alexander Bush ,  Maximilian Tobias Hoerantner ,  Tomas Leijtens

IPC分类号： C30B35/00 ,  B65G53/16 ,  C23C14/06 ,  C23C14/22 ,  C30B23/06 ,  H01L21/02

CPC分类号： H01L21/02271 ,  B65G53/16 ,  C23C14/0694 ,  C23C14/228 ,  C30B23/066

摘要： Vapor phase transport systems and methods of depositing perovskite films are described. In an embodiment, a deposition method includes feeding a perovskite solution or constituent powder to a vaporizer, followed by vaporization and depositing the constituent vapor as a perovskite film. In an embodiment, a deposition system and method includes vaporizing different perovskite precursors in different vaporization zones at different temperatures, followed by mixing the vaporized precursors to form a constituent vapor, and depositing the constituent vapor as a perovskite film.

公开(公告)号：US12000061B2

公开(公告)日：2024-06-04

申请号：US17106471

申请日：2020-11-30

申请人： T.O.S Co., Ltd.

发明人： Bum Ho Choi ,  Seung Soo Lee ,  Yeong Geun Jo ,  Yong Sik Kim

IPC分类号： C30B35/00 ,  C23C14/08 ,  C23C14/30 ,  C30B23/06 ,  C30B23/08 ,  C30B29/16 ,  H01L21/02

CPC分类号： C30B23/066 ,  C23C14/086 ,  C23C14/30 ,  C30B23/08 ,  C30B29/16 ,  C30B35/00 ,  H01L21/02554 ,  H01L21/02631

摘要： Disclosed herein is a separate chamber type epi-growth apparatus including a reaction chamber having a growth space, a substrate mounting unit disposed in the growth space and allowing a substrate to be mounted thereon, a metal oxide treating unit treating a metal oxide in a space independent from the growth space so that metal ions and oxygen ions generated from the metal oxide are supplied to the substrate, an arsenic supply unit installed to face the substrate and supplying arsenic ions to the substrate, an oxygen radical supply unit installed to face the substrate, dissociating oxygen molecules in a gaseous state, and supplying oxygen radicals to the substrate, and a vacuum control unit independently controlling a vacuum state of the reaction chamber and the metal oxide treating unit.

公开(公告)号：US20240093408A1

公开(公告)日：2024-03-21

申请号：US18266268

申请日：2021-12-13

申请人： Zadient Technologies SAS

发明人： Ivo Crössmann ,  Friedrich Schaaff ,  Hilmar Richard Tiefel ,  Kagan Ceran

IPC分类号： C30B35/00 ,  C01B32/956 ,  C23C16/32 ,  C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  C30B23/06 ,  C30B29/36

CPC分类号： C30B35/007 ,  C01B32/956 ,  C23C16/325 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/52 ,  C30B23/066 ,  C30B29/36

摘要： The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.

公开(公告)号：US11821105B2

公开(公告)日：2023-11-21

申请号：US17385912

申请日：2021-07-27

申请人： GlobalWafers Co., Ltd.

发明人： Ching-Shan Lin

IPC分类号： C30B23/02 ,  C30B29/36 ,  C30B23/06 ,  C01B32/956 ,  H01L29/30

CPC分类号： C30B23/025 ,  C30B23/066 ,  C30B29/36 ,  C01B32/956 ,  H01L29/30

摘要： The disclosure provides a silicon carbide seed crystal and a method of manufacturing a silicon carbide ingot. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1), a local thickness variation (LTV) of the silicon carbide seed crystal is 2.5 μm or less, and a stacking fault (SF) density of the silicon carbide seed crystal is 10 EA/cm2 or less:

D=(BPD1−BPD2)/BPD1≤25%  (1).

公开(公告)号：US11761117B2

公开(公告)日：2023-09-19

申请号：US17447742

申请日：2021-09-15

申请人： II-VI Delaware, Inc

发明人： Avinash Gupta ,  Ilya Zwieback ,  Edward Semenas ,  Marcus Getkin ,  Patrick Flynn

IPC分类号： C30B29/36 ,  C30B23/00 ,  C30B23/06

CPC分类号： C30B29/36 ,  C30B23/005 ,  C30B23/06 ,  C30B23/066

摘要： A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.

公开(公告)号：US11718926B2

公开(公告)日：2023-08-08

申请号：US17448895

申请日：2021-09-27

申请人： HON HAI PRECISION INDUSTRY CO., LTD.

发明人： Chung-Yi Chen

IPC分类号： C30B23/06 ,  C30B23/00 ,  C30B35/00 ,  C30B29/36

CPC分类号： C30B23/066 ,  C30B23/005 ,  C30B29/36 ,  C30B35/00

摘要： A method of single crystal growth includes disposing a polycrystalline source material in a chamber of a single crystal growth apparatus, disposing a seed layer in the chamber of the single crystal growth apparatus, wherein the seed layer is fixed below a lid of the single crystal growth apparatus, heating the polycrystalline source material by a heater of the single crystal growth apparatus to deposit a semiconductor material layer on the seed layer, and after depositing the semiconductor material layer, providing a coolant gas at a backside of the lid to cool down the seed layer and the semiconductor material layer.

公开(公告)号：US20230203713A1

公开(公告)日：2023-06-29

申请号：US17927810

申请日：2021-04-27

申请人： Ebner Industrieofenbau GmbH

发明人： Robert EBNER ,  Kanaparin ARIYAWONG ,  Chih-Yung HSIUNG ,  Ghassan BARBAR

IPC分类号： C30B35/00 ,  F27B14/14 ,  C30B23/06 ,  C30B25/10 ,  C30B25/08

CPC分类号： C30B35/002 ,  F27B14/14 ,  C30B23/066 ,  C30B25/10 ,  C30B25/08

摘要： A crucible device includes a heating chamber, at least a first crucible in which a first crystal is growable, and at least a second crucible in which a second crystal is growable. The first crucible and the second crucible are arranged within the heating chamber spaced apart from each other along a horizontal and vertical and any orientational direction. The crucible device further comprises a heating system arranged within the heating chamber, wherein the heating system is configured for adjusting a temperature along the horizontal and vertical and any orientational directions.

公开(公告)号：US20230183883A1

公开(公告)日：2023-06-15

申请号：US18080008

申请日：2022-12-13

申请人： Robert T. BONDOKOV ,  James R. GRANDUSKY ,  Jianfeng CHEN ,  Shichao WANG ,  Toru KIMURA ,  Thomas MIEBACH ,  Keisuke YAMAOKA ,  Leo J. SCHOWALTER

发明人： Robert T. BONDOKOV ,  James R. GRANDUSKY ,  Jianfeng CHEN ,  Shichao WANG ,  Toru KIMURA ,  Thomas MIEBACH ,  Keisuke YAMAOKA ,  Leo J. SCHOWALTER

IPC分类号： C30B29/40 ,  H01L33/32 ,  C30B23/06 ,  C30B33/02

CPC分类号： C30B29/403 ,  C30B23/066 ,  C30B33/02 ,  H01L33/32 ,  C01B21/072 ,  C01P2006/60

摘要： In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.