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1.发明公开公开(公告)号：US20230183883A1
公开(公告)日：2023-06-15
申请号：US18080008
申请日：2022-12-13
申请人： Robert T. BONDOKOV , James R. GRANDUSKY , Jianfeng CHEN , Shichao WANG , Toru KIMURA , Thomas MIEBACH , Keisuke YAMAOKA , Leo J. SCHOWALTER
发明人： Robert T. BONDOKOV , James R. GRANDUSKY , Jianfeng CHEN , Shichao WANG , Toru KIMURA , Thomas MIEBACH , Keisuke YAMAOKA , Leo J. SCHOWALTER
CPC分类号： C30B29/403 , C30B23/066 , C30B33/02 , H01L33/32 , C01B21/072 , C01P2006/60
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
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公开(公告)号：US11384449B2
公开(公告)日：2022-07-12
申请号：US16817876
申请日：2020-03-13
IPC分类号： C30B25/10 , C30B29/40 , H01S5/02 , H01S5/343 , C30B23/00 , C30B33/06 , H01L21/20 , H01L33/06 , H01L33/00
摘要： In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.
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公开(公告)号：US20200283926A1
公开(公告)日：2020-09-10
申请号：US16817876
申请日：2020-03-13
摘要： In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.
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公开(公告)号：US20180331253A1
公开(公告)日：2018-11-15
申请号：US15977031
申请日：2018-05-11
申请人： James R. GRANDUSKY , Leo J. SCHOWALTER , Craig MOE
发明人： James R. GRANDUSKY , Leo J. SCHOWALTER , Craig MOE
摘要： In various embodiments, extraction efficiency of light-emitting devices fabricated on aluminum nitride substrates is enhanced via removal of at least a portion of the substrate.
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公开(公告)号：US09935247B2
公开(公告)日：2018-04-03
申请号：US14806761
申请日：2015-07-23
申请人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
发明人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
CPC分类号： H01L33/56 , H01L33/54 , H01L33/58 , H01L2933/005 , H01L2933/0058
摘要： In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
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公开(公告)号：US09680057B2
公开(公告)日：2017-06-13
申请号：US15267458
申请日：2016-09-16
申请人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
发明人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
IPC分类号： H01L33/14 , H01L33/06 , H01L33/32 , H01L33/46 , H01L33/44 , H01L33/00 , H01L33/02 , H01L33/36
CPC分类号： H01L33/06 , H01L33/0075 , H01L33/025 , H01L33/145 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/46
摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
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公开(公告)号：US09437430B2
公开(公告)日：2016-09-06
申请号：US12020006
申请日：2008-01-25
IPC分类号： H01L31/0328 , H01L21/02 , H01L33/08 , H01L33/12
CPC分类号： H01L21/0262 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L33/08 , H01L33/12
摘要： Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.
摘要翻译： 制造半导体结构以包括超过其预测临界厚度的应变外延层。
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公开(公告)号：US08080833B2
公开(公告)日：2011-12-20
申请号：US12764584
申请日：2010-04-21
IPC分类号： H01L33/00
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/025 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
摘要翻译： 在各种实施例中，半导体器件包括氮化铝单晶衬底，设置在其上的假晶应变层，其包括AlN，GaN，InN或其合金中的至少一种，并且在应变层上设置半导体层 这与衬底晶格失配并基本上松弛。
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公开(公告)号：US11939700B2
公开(公告)日：2024-03-26
申请号：US17496867
申请日：2021-10-08
申请人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
发明人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
IPC分类号： C30B29/40 , C30B23/06 , C30B33/02 , H01L33/32 , C01B21/072
CPC分类号： C30B29/403 , C30B23/066 , C30B33/02 , H01L33/32 , C01B21/072 , C01P2006/60
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.
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公开(公告)号：US11515455B2
公开(公告)日：2022-11-29
申请号：US17083580
申请日：2020-10-29
申请人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
发明人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
摘要： In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
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