- 专利标题： Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals
-
申请号： US17496867申请日： 2021-10-08
-
公开(公告)号： US11939700B2公开(公告)日： 2024-03-26
- 发明人: Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
- 申请人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
- 申请人地址： US NY Watervliet
- 专利权人： Crystal IS, Inc.
- 当前专利权人： Crystal IS, Inc.
- 当前专利权人地址： US NY Green Island
- 代理机构： Morgan, Lewis & Bockius LLP
- 主分类号： C30B29/40
- IPC分类号： C30B29/40 ; C30B23/06 ; C30B33/02 ; H01L33/32 ; C01B21/072
摘要：
In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.
公开/授权文献
信息查询
IPC分类:
