公开(公告)号：US11242263B2

公开(公告)日：2022-02-08

申请号：US16862833

申请日：2020-04-30

Applicant: The Florida State University Research Foundation, Inc.

Inventor： Hanwei Gao ,  Biwu Ma ,  Yichuan Ling ,  Xi Wang

IPC: C01G21/00 ,  H01L33/26 ,  H01L31/0328 ,  C07F7/24 ,  H01L51/50 ,  H01L51/42 ,  H01L51/00

Abstract: Bandgap-tunable perovskite compositions are provided having the formula CsPb(AxBy)3, wherein A and B are each a halogen. The mixed halide perovskite composition has a morphology which suppresses phase segregation to stabilize a tuned bandgap of the mixed halide perovskite composition. For example, the perovskite may be in the form of nanocrystals embedded in a non-perovskite matrix, which, for example, may have the formula Cs4Pb(AxBy)6, wherein A and B are each a halogen. Solar cells and light-emitting diodes comprising the mixed perovskite compositions are also provided.

公开(公告)号：US10749057B2

公开(公告)日：2020-08-18

申请号：US16251380

申请日：2019-01-18

Applicant: Interface Technology (ChengDu) Co., Ltd. ,  INTERFACE OPTOELECTRONICS (SHENZHEN) CO., LTD. ,  GENERAL INTERFACE SOLUTION LIMITED

Inventor： Yu-Ju Chen

IPC: H01L31/0352 ,  G06K9/00 ,  G06K9/20 ,  H01L31/032 ,  H01L31/0328 ,  H01L31/113 ,  H01L31/167 ,  H01L33/30

Abstract: A device for sensing suspension operations or biometrics includes a light emitting module and a sensing layer. The light emitting module and the sensing layer are sequentially stacked. The light emitting module includes a plurality of light emitting elements emitting light near the infrared and the sensing layer includes a plurality of quantum dot thin film transistors. The quantum dot thin film transistor includes an active layer and quantum dots covering the active layer. The near-infrared light emitted by the plurality of light emitting elements is reflected by an animate object and received by the quantum dot thin film transistors. The sensing device can better sense suspension operations or biometrics. A method for the procedure is also disclosed.

公开(公告)号：US10714640B2

公开(公告)日：2020-07-14

申请号：US16073039

申请日：2017-01-24

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Takuma Fuyuki ,  Suguru Arikata ,  Susumu Yoshimoto ,  Katsushi Akita

IPC: H01L31/0328 ,  H01L21/00 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/103 ,  H01L21/02 ,  H01L31/101 ,  H01L31/18 ,  B82Y20/00

Abstract: A semiconductor stacked body includes: a first semiconductor layer containing a group III-V compound semiconductor and being a layer whose conductivity type is a first conductivity type; a quantum-well light-receiving layer containing a group III-V compound semiconductor; a second semiconductor layer containing a group III-V compound semiconductor; and a third semiconductor layer containing a group III-V compound semiconductor and being a layer whose conductivity type is a second conductivity type. The first semiconductor layer, the quantum-well light-receiving layer, the second semiconductor layer, and the third semiconductor layer are stacked in this order. The concentration of an impurity that generates a carrier of the second conductivity type is 1×1014 cm−3 or more and 1×1017 cm−3 or less in the second semiconductor layer.

公开(公告)号：US10700118B2

公开(公告)日：2020-06-30

申请号：US16143397

申请日：2018-09-26

Applicant: EXPANTRUM OPTOELECTRONICS

Inventor： Zhongshou Huang

IPC: H01L27/146 ,  H01L27/30 ,  H01L31/0376 ,  H01L31/0224 ,  H01L27/28 ,  H01L31/101 ,  H01L31/0272 ,  H01L31/0328

Abstract: A multispectral imaging device comprises a first photoelectric conversion module and a second photoelectric conversion module. The first photoelectric conversion module further includes a first photoelectric conversion layer located between a first conducting layer and a second conducting layer. The first conducting layer, coupled to a first constant potential, is configured to allow visible light and infrared light to pass through. The first photoelectric conversion layer is configured to convert the visible light into a first electrical signal. The second photoelectric conversion module, formed on a silicon substrate, is configured to receive the infrared light coming from the first photoelectric conversion module. The second photoelectric conversion layer located between a third conducting layer and a fourth conducting layer, wherein the third conducting layer is configured to allow the infrared light passing through, the second photoelectric conversion layer is configured to convert the infrared light into a second electrical signal.

公开(公告)号：US20200044107A1

公开(公告)日：2020-02-06

申请号：US16595959

申请日：2019-10-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Tayfun Gokmen ,  Oki Gunawan ,  Richard A. Haight ,  Jeehwan Kim ,  David B. Mitzi ,  Mark T. Winkler

IPC: H01L31/075 ,  H01L31/032 ,  H01L31/18 ,  H01L31/0328 ,  H01L31/077

Abstract: A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

公开(公告)号：US10461160B2

公开(公告)日：2019-10-29

申请号：US15082160

申请日：2016-03-28

Applicant: INSTITUTT FOR ENERGITEKNIKK

Inventor： Alexander G. Ulyashin ,  Smagul Karazhanov ,  Arve Holt

IPC: H01L31/032 ,  H01L21/02 ,  H01L29/24 ,  H01L31/0328 ,  H01L31/072

Abstract: This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.

公开(公告)号：US10431703B2

公开(公告)日：2019-10-01

申请号：US15927277

申请日：2018-03-21

Applicant: Juniper Networks, Inc.

Inventor： Erik Johan Norberg ,  Anand Ramaswamy ,  Brian Robert Koch

IPC: H01S5/32 ,  H01L31/0304 ,  H01L31/0328 ,  H01S5/024 ,  H01L31/0232 ,  H01L31/109 ,  H01S5/02 ,  H01S5/026 ,  H01S5/10

Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

公开(公告)号：US20190229223A1

公开(公告)日：2019-07-25

申请号：US16372636

申请日：2019-04-02

Applicant: University of Central Florida Research Foundation, Inc.

Inventor： Debashis Chanda ,  Alireza Safaei ,  Michael Leuenberger

IPC: H01L31/0352 ,  H01L31/101 ,  H01L31/0328 ,  G02B5/00 ,  G02B5/08 ,  H01L27/30 ,  G01N21/552 ,  H01L51/42 ,  H01L31/09 ,  H01L31/0232 ,  G02B5/12 ,  H01L31/054

CPC classification number: H01L31/035209 ,  B82Y20/00 ,  B82Y30/00 ,  G01N21/553 ,  G01N21/554 ,  G01N2021/7773 ,  G02B5/008 ,  G02B5/0866 ,  G02B5/12 ,  H01L27/307 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/0328 ,  H01L31/0543 ,  H01L31/09 ,  H01L31/101 ,  H01L51/42

Abstract: A method is for making an optical detector device. The method may include forming a reflector layer carried by a substrate, forming a first dielectric layer over the reflector layer, and forming a graphene layer over the first dielectric layer and having a perforated pattern therein.

公开(公告)号：US10361324B2

公开(公告)日：2019-07-23

申请号：US15661225

申请日：2017-07-27

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hidekazu Tanaka ,  Osamu Nakagawara

IPC: B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C23C14/08 ,  C23C14/28 ,  C30B29/16 ,  H01L31/18 ,  H01L31/032 ,  H01L31/072 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/0352 ,  C30B23/02

Abstract: A structural body that includes a film that has a phase-separated nanostructure where a separate columnar shape phase is dispersed in a matrix phase that are phase-separated in a state of thermal equilibrium. The matrix phase is formed from any one of a p-type semiconductor material and an n-type semiconductor material, and the separate columnar shape phase is formed from the other semiconductor material. The film is formed on a substrate such that the separate columnar shaped phase and the matrix phase have three-dimensional junction planes.

公开(公告)号：US10328419B2

公开(公告)日：2019-06-25

申请号：US16006939

申请日：2018-06-13

Applicant: FUJITSU LIMITED

Inventor： Toshihisa Anazawa ,  Yoshihiko Imanaka ,  Toshio Manabe ,  Hideyuki Amada ,  Sachio Ido ,  Fumiaki Kumasaka ,  Naoki Awaji

IPC: B01J35/00 ,  B01J27/24 ,  H01L31/0328 ,  H01L31/18 ,  B01J37/02 ,  H01L31/032 ,  H01L31/0296 ,  H01L31/0304

Abstract: A photoexcitation material includes: a wurtzite type solid solution crystal containing t gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.