Abstract:
A relevant technological challenge is the low cost and abundant materials development for silicon surface passivation for applications in optoelectronic devices, in particular in solar cells by scalable industrial methods. In the present invention, a new hybrid material comprising PEDOT:PSS and transparent conducting oxide nanostructures is developed and a method is proposed to fabricate the composite material that passivates well the silicon surface to be used by means of a thin composite film of thickness below 200 nm.
Abstract:
An oxygen carrier (OC) for use in Chemical Looping technology with Oxygen Uncoupling (CLOU) for the combustion of carbonaceous fuels, in which commercial grade metal oxides selected from the group consisting of Cu, Mn, and Co oxides and mixtures thereof constitute a primary oxygen carrier component. The oxygen carrier contains, at least, a secondary oxygen carrier component which is comprised by low-value industrial materials which already contain metal oxides selected from the group consisting of Cu, Mn, Co, Fe, Ni oxides or mixtures thereof. The secondary oxygen carrier component has a minimum oxygen carrying capacity of 1 g of O2 per 100 g material in chemical looping reactions. Methods for the manufacture of the OC are also disclosed.
Abstract:
A method for manufacturing a passivation stack on a crystalline silicon solar cell device. The method includes providing a substrate comprising a crystalline silicone layer such as a crystalline silicon wafer or chip, cleaning a surface of the crystalline silicon layer by removing an oxide layer at least from a portion of one side of the crystalline silicon layer, depositing, on at least a part of the cleaned surface, a layer of silicon oxynitride, and depositing a capping layer comprising a hydrogenated dielectric material on top of the layer of silicon oxynitride, wherein the layer of silicon oxynitride is deposited at a temperature from 100° C. to 200° C., and the step of depositing the layer of silicon oxynitride includes using N2O and SiH4 as precursor gasses in an N2 ambient atmosphere and depositing silicon oxynitride with a gas flow ratio of N2O to SiH4 below 2.
Abstract:
The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.
Abstract:
The present invention relates to a metal hydride device having a variable transparency, comprising a substrate, at least one layer including a photochromic yttrium hydride having a chosen band gap, and a capping layer at least partially positioned on the opposite side of the photochromic yttrium hydride layer from the substrate, said capping layer being essentially impermeable to hydrogen and oxygen.
Abstract:
The present invention provides a method for monitoring precipitation of at least one wax component from a hydrocarbon-containing fluid stream during the flow of said fluid stream through a fluid transport system having at least one in-flow point and at least one out-flow point. The method comprises: i) introducing at least one labelled wax into said hydrocarbon-containing fluid stream at at least one in-flow point; and ii) measuring the relative or absolute concentration of said labelled wax in at least one sample taken at at least one out-flow point. The method may comprise sampling and analysing wax components from the hydrocarbon-containing fluid, identifying suitable wax components and generating labelled waxed based upon such components. Methods of generating labelled waxes and their uses are provided, along with corresponding methods for asphaltenes.
Abstract:
A method for manufacturing a passivation stack on a crystalline silicon solar cell device. The method includes providing a substrate comprising a crystalline silicone layer such as a crystalline silicon wafer or chip, cleaning a surface of the crystalline silicon layer by removing an oxide layer at least from a portion of one side of the crystalline silicon layer, depositing, on at least a part of the cleaned surface, a layer of silicon oxynitride, and depositing a capping layer comprising a hydrogenated dielectric material on top of the layer of silicon oxynitride, wherein the layer of silicon oxynitride is deposited at a temperature from 100° C. to 200° C., and the step of depositing the layer of silicon oxynitride includes using N20 and SiH4 as precursor gasses in an N2 ambient atmosphere and depositing silicon oxynitride with a gas flow ratio of N20 to SiH4 below 2.
Abstract:
An inlet arrangement (1) for use in plate heat exchangers (2) is disclosed. The arrangement comprises an element with a dispersion opening (6) for arrangement in an inlet (5) in a plate exchanger. The inlet arrangement (1) is arranged to form a mainly fitting cylinder wall when introduced in the inlet (5). The cylinder wall comprises at least one opening (6) which extends partly or fully along the length of the inlet (5) and is sealingly arranged towards the inlet (5) of the plate heat exchanger. Furthermore, the opening (6) is oriented towards one side at an angle from the perpendicular. The use of such inlet arrangement (1) is also disclosed.
Abstract:
Systems, methods, and computer-readable media for modeling slug flow. The method includes receiving a fluid flow model comprising a representation of one or more conduits and a multiphase fluid flow therein, and determining a slug birth rate in the multiphase fluid flow. The slug birth rate is determined based at least partially on a difference between a slug front velocity and a slug tail velocity. The method also includes initiating a slug in the fluid flow model based at least partially on the slug birth rate, and displaying data representative of the slug flow in the model.
Abstract:
Method for analyzing the alkalinity conditions in aqueous liquids, comprising: sampling a known amount of the aqueous liquid and placing it in a container of known volume, measuring pH in the sampled liquid and pressure in the container, adding a known amount of CO2 to the sampled liquid, and measuring pH in the sampled liquid and the pressure in the container, and finally calculating the total alkalinity based on the values from the performed measurements. An apparatus for conducting the method is also described as well as a method for controlling chemistry of a glycol containing liquid in a system for recovery of glycol.