公开(公告)号：US09660130B2

公开(公告)日：2017-05-23

申请号：US15037163

申请日：2014-11-19

申请人： Institutt for Energiteknikk

发明人： Junjie Zhu ,  Su Zhou ,  Halvard Haug ,  Erik Stensrud Marstein ,  Sean Erik Foss ,  Wenjing Wang ,  Chunlan Zhou

IPC分类号： H01L31/0216 ,  H01L31/18 ,  H01L21/02 ,  H01L31/068

CPC分类号： H01L31/1804 ,  H01L21/02057 ,  H01L21/0214 ,  H01L21/02301 ,  H01L31/02167 ,  H01L31/068 ,  Y02E10/547

摘要： A method for manufacturing a passivation stack on a crystalline silicon solar cell device. The method includes providing a substrate comprising a crystalline silicone layer such as a crystalline silicon wafer or chip, cleaning a surface of the crystalline silicon layer by removing an oxide layer at least from a portion of one side of the crystalline silicon layer, depositing, on at least a part of the cleaned surface, a layer of silicon oxynitride, and depositing a capping layer comprising a hydrogenated dielectric material on top of the layer of silicon oxynitride, wherein the layer of silicon oxynitride is deposited at a temperature from 100° C. to 200° C., and the step of depositing the layer of silicon oxynitride includes using N2O and SiH4 as precursor gasses in an N2 ambient atmosphere and depositing silicon oxynitride with a gas flow ratio of N2O to SiH4 below 2.

公开(公告)号：US09978902B2

公开(公告)日：2018-05-22

申请号：US15494064

申请日：2017-04-21

申请人： Institutt for Energiteknikk

发明人： Junjie Zhu ,  Su Zhou ,  Halvard Haug ,  Erik Stensrud Marstein ,  Sean Erik Foss ,  Wenjing Wang ,  Chunlan Zhou

IPC分类号： H01L31/0216 ,  H01L31/18 ,  H01L21/02

CPC分类号： H01L31/1804 ,  H01L21/02057 ,  H01L21/0214 ,  H01L21/02301 ,  H01L31/02167 ,  H01L31/068 ,  Y02E10/547

摘要： A method for manufacturing a passivation stack on a crystalline silicon solar cell device. The method includes providing a substrate comprising a crystalline silicone layer such as a crystalline silicon wafer or chip, cleaning a surface of the crystalline silicon layer by removing an oxide layer at least from a portion of one side of the crystalline silicon layer, depositing, on at least a part of the cleaned surface, a layer of silicon oxynitride, and depositing a capping layer comprising a hydrogenated dielectric material on top of the layer of silicon oxynitride, wherein the layer of silicon oxynitride is deposited at a temperature from 100° C. to 200° C., and the step of depositing the layer of silicon oxynitride includes using N2O and SiH4 as precursor gasses in an N2 ambient atmosphere and depositing silicon oxynitride with a gas flow ratio of N2O to SiH4 below 2.