公开(公告)号：US10249662B2

公开(公告)日：2019-04-02

申请号：US15816176

申请日：2017-11-17

Applicant: EXPANTRUM OPTOELECTRONICS

Inventor： Zhongshou Huang

IPC: H01L31/062 ,  H01L27/146 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/0224 ,  H01L21/223 ,  H01L31/103

Abstract: The present disclosure provides a multispectral imaging device, comprising the following layers and components arranged in sequence following a direction of incident light: a color filter layer, comprising a plurality of color filters transparent for specific wavebands; a first transparent electrode layer continuously formed in imaging area; a first conversion layer continuously formed in imaging area to convert visible light to electric signals; a first flat topography comprising plurality of pixel electrodes and with surface roughness less than 5 nm; a second conversion layer to convert NIR light to electric signals; and circuit components to process the electric signals. Benefit from the first continuous conversion layer formed on the flat topography, high light utilization, low spectral cross-talk, low dark current are achieved in the multispectral imaging device.

公开(公告)号：US10700118B2

公开(公告)日：2020-06-30

申请号：US16143397

申请日：2018-09-26

Applicant: EXPANTRUM OPTOELECTRONICS

Inventor： Zhongshou Huang

IPC: H01L27/146 ,  H01L27/30 ,  H01L31/0376 ,  H01L31/0224 ,  H01L27/28 ,  H01L31/101 ,  H01L31/0272 ,  H01L31/0328

Abstract: A multispectral imaging device comprises a first photoelectric conversion module and a second photoelectric conversion module. The first photoelectric conversion module further includes a first photoelectric conversion layer located between a first conducting layer and a second conducting layer. The first conducting layer, coupled to a first constant potential, is configured to allow visible light and infrared light to pass through. The first photoelectric conversion layer is configured to convert the visible light into a first electrical signal. The second photoelectric conversion module, formed on a silicon substrate, is configured to receive the infrared light coming from the first photoelectric conversion module. The second photoelectric conversion layer located between a third conducting layer and a fourth conducting layer, wherein the third conducting layer is configured to allow the infrared light passing through, the second photoelectric conversion layer is configured to convert the infrared light into a second electrical signal.

公开(公告)号：US10056423B1

公开(公告)日：2018-08-21

申请号：US15809040

申请日：2017-11-10

Applicant: EXPANTRUM OPTOELECTRONICS

Inventor： Zhongshou Huang

IPC: H01L27/146 ,  H01L31/103 ,  H01L31/105 ,  H04N5/30 ,  H04N5/33 ,  A61B5/00

CPC classification number: H01L27/14652 ,  A61B5/0075 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14665 ,  H01L31/1013 ,  H01L31/103 ,  H01L31/105 ,  H04N5/30 ,  H04N5/33 ,  H04N5/332 ,  H04N9/04563

Abstract: A multispectral imaging device, comprising a pixel array, each said pixel comprises at least a first subpixel and a second subpixel, each subpixel comprises at least an infrared light conversion layer; a visible light conversion layer and a color filter layer; said visible light conversion layer is arranged between said infrared light conversion layer and said color filter layer; wherein, infrared conversion efficiency in said first subpixel is larger than infrared conversion efficiency in said second subpixel, and infrared light transmittance of the color filter layer in said first subpixel is larger than infrared light transmittance of the color filter layer in said second subpixel. The multispectral imaging device realizes imaging in multiple wavebands and in an increased dynamic range.

公开(公告)号：US10778914B2

公开(公告)日：2020-09-15

申请号：US15871128

申请日：2018-01-15

Applicant: EXPANTRUM OPTOELECTRONICS

Inventor： Zhongshou Huang

IPC: H04N5/33 ,  H04N5/369 ,  H04N5/225 ,  H01L27/146 ,  A61B5/00 ,  G02B5/20 ,  A61B5/103 ,  A61B6/00 ,  H04N5/232 ,  G02B27/28 ,  H04N5/374 ,  H04N9/04 ,  H04N9/09

Abstract: A portable multispectral imaging device comprises a first image sensing module, including at least one lens module and an image sensor. The image sensor is configured to acquire a plurality of images of light radiation, passing through the lens module, and the images include at least one first visible light image and an invisible light image. The center of the lens module and the center of the image sensor are aligned on an optical axis. Moreover, a plurality of light sources including at least one invisible light source are arranged to surround the first image sensing module. A flat-panel display module configured to show an image including the acquired images and previously saved images.

公开(公告)号：US10418411B2

公开(公告)日：2019-09-17

申请号：US15815852

申请日：2017-11-17

Applicant: EXPANTRUM OPTOELECTRONICS

Inventor： Zhongshou Huang

IPC: H01L27/146 ,  H01L31/105 ,  H01L31/103 ,  H01L31/0376 ,  H01L31/0224 ,  A61B5/00

Abstract: A multispectral imaging device comprises a hybrid semiconductor device of stacked type to separate different light wavebands in a three-dimensional space, said hybrid semiconductor device comprises: a first photodiode, to convert NIR light photons to electrons, said first photodiode forming a detecting array of infrared light image, said first photodiodes comprising a substrate and an depletion layer; and a second photodiode, arranged on said first photodiode, to convert visible light photons to electrons, said second photodiode forming a detecting array of visible light image. The multispectral imaging device provided by the present disclosure decreases the cross-talk between different photodiodes and increases the total performance.

公开(公告)号：US10211252B2

公开(公告)日：2019-02-19

申请号：US15809010

申请日：2017-11-10

Applicant: EXPANTRUM OPTOELECTRONICS

Inventor： Zhongshou Huang

IPC: H01L27/146

Abstract: The present disclosure provides a multispectral imaging device and imaging system. The multispectral imaging device comprises: a substrate; a plurality of semiconductor layers, stacked on the substrate and arranged in a direction perpendicular to the substrate, different semiconductor layers converting visible light photons and NIR light photons to electrons, respectively; and a filtering layer, arranged on one side of the plurality of semiconductor layers away from the substrate, comprising a plurality of filtering sections arranged as a matrix, to separate the incident light to multiple wavebands on a plane parallel to the substrate. The multispectral imaging device and imaging system separate the incident light by waveband in a direction perpendicular to the substrate and a direction parallel to the substrate, then multispectral images can be acquired at the same time.