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1.发明公开公开(公告)号：US20240282879A1
公开(公告)日：2024-08-22
申请号：US18649850
申请日：2024-04-29
发明人： PETER JOHN COUSINS
IPC分类号： H01L31/068 , H01L31/0216 , H01L31/0224 , H01L31/0236 , H01L31/0368 , H01L31/056 , H01L31/072 , H01L31/0745 , H01L31/18
CPC分类号： H01L31/0682 , H01L31/02168 , H01L31/022433 , H01L31/02363 , H01L31/03682 , H01L31/056 , H01L31/072 , H01L31/0745 , H01L31/1804 , H01L31/182 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/50
摘要： A bipolar solar cell includes a backside junction formed by a silicon substrate and a first doped layer of a first dopant type on the backside of the solar cell. A second doped layer of a second dopant type makes an electrical connection to the substrate from the front side of the solar cell. A first metal contact of a first electrical polarity electrically connects to the first doped layer on the backside of the solar cell, and a second metal contact of a second electrical polarity electrically connects to the second doped layer on the front side of the solar cell. An external electrical circuit may be electrically connected to the first and second metal contacts to be powered by the solar cell.
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公开(公告)号：US12009449B2
公开(公告)日：2024-06-11
申请号：US18107917
申请日：2023-02-09
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L21/00 , H01L31/0216 , H01L31/0224 , H01L31/0236 , H01L31/068 , H01L31/072 , H01L31/0745 , H01L31/0747 , H01L31/18
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/50
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
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公开(公告)号：US11955476B2
公开(公告)日：2024-04-09
申请号：US18302785
申请日：2023-04-19
申请人： Schottky LSI, Inc.
IPC分类号： H01L29/872 , H01L21/8238 , H01L25/065 , H01L27/02 , H01L27/06 , H01L27/07 , H01L27/105 , H01L27/118 , H01L29/66 , H01L31/032 , H01L31/0376 , H01L31/07 , H01L31/072 , H01L31/074 , H03K19/17728 , H10B12/00 , H10B20/00 , H10B41/40 , H10B41/49 , H01L49/02
CPC分类号： H01L27/0629 , H01L21/8238 , H01L25/065 , H01L27/0207 , H01L27/0727 , H01L27/105 , H01L27/11807 , H01L29/66143 , H01L29/872 , H01L31/032 , H01L31/0376 , H01L31/03762 , H01L31/07 , H01L31/072 , H01L31/074 , H03K19/17728 , H10B12/50 , H10B20/00 , H10B20/38 , H10B20/60 , H10B20/65 , H10B41/40 , H10B41/49 , H01L28/20 , H01L2924/0002 , Y02E10/50
摘要： A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P— and N—Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.
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公开(公告)号：US11929443B1
公开(公告)日：2024-03-12
申请号：US16228193
申请日：2018-12-20
发明人： Victor Klimov
IPC分类号： H01L31/055 , H01L31/0296 , H01L31/0304 , H01L31/032 , H01L31/0352 , H01L31/072
CPC分类号： H01L31/035218 , H01L31/0296 , H01L31/0304 , H01L31/0322 , H01L31/055 , H01L31/072
摘要： Luminescent solar concentrators (LSCs) based on engineered quantum dots (QDs) are disclosed that include at least one lower band-gap energy LSC layer and at least one higher band-gap energy LSC layer. The higher band-gap energy LSC layer has a higher internal quantum efficiency (IQE) than the lower band-gap energy LSC layer. The lower band-gap energy LSC layer may broadly absorb the remainder of the solar spectrum that is not absorbed by previous layers. An external optical efficiency (EQE) of at least 6%, and in some cases, more than 10%, may be achieved by such LSCs.
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公开(公告)号：US11870438B2
公开(公告)日：2024-01-09
申请号：US17752673
申请日：2022-05-24
申请人： Schottky LSI, Inc.
IPC分类号： H03K19/09 , H03K19/0956 , H01L25/065 , H01L27/02 , H01L27/105 , H01L27/118 , H01L49/02 , H01L31/032 , H01L31/0376 , H01L31/072 , H01L31/074 , H03K19/017 , H03K19/0948 , H03K19/17728 , H10B12/00 , H10B20/00 , H10B41/40 , H10B41/49
CPC分类号： H03K19/0956 , H01L25/065 , H01L27/0207 , H01L27/105 , H01L27/11807 , H01L28/00 , H01L31/032 , H01L31/0376 , H01L31/072 , H01L31/074 , H03K19/01707 , H03K19/0948 , H03K19/17728 , H10B12/50 , H10B20/00 , H10B20/38 , H10B20/60 , H10B20/65 , H10B41/40 , H10B41/49 , H01L28/20 , H01L2924/0002 , Y02E10/50 , H01L2924/0002 , H01L2924/00
摘要： Integrated circuits described herein implement multiplexer (MUX) gate system. An integrated circuit includes a plurality of inputs coupled with a first stage of the integrated circuit. The first stage includes a plurality of first Schottky diodes and a plurality of N-type transistors. Each input is coupled with a respective first Schottky diode and N-type transistor. The integrated circuit also includes a plurality of outputs of the first stage coupled with a second stage of the integrated circuit. The second stage includes a plurality of second Schottky diodes and a plurality of P-type transistors. Each output coupled with a respective second Schottky diode and P-type transistor. The integrated circuit further includes a plurality of outputs of the second stage coupled with a set of transistors including a P-type transistor and an N-type transistor, and an output of the set of transistors coupled with an output of the MUX gate system.
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公开(公告)号：US20230352475A1
公开(公告)日：2023-11-02
申请号：US18302785
申请日：2023-04-19
申请人： Schottky LSI, Inc.
IPC分类号： H01L27/06 , H01L27/02 , H01L27/07 , H01L27/105 , H01L27/118 , H01L31/032 , H01L31/0376 , H01L31/072 , H01L31/074 , H10B12/00 , H10B20/00 , H10B41/40 , H10B41/49 , H03K19/17728 , H01L25/065 , H01L21/8238 , H01L29/66 , H01L29/872 , H01L31/07
CPC分类号： H01L27/0629 , H01L27/0207 , H01L27/0727 , H01L27/105 , H01L27/11807 , H01L31/032 , H01L31/0376 , H01L31/072 , H01L31/074 , H10B12/50 , H10B20/00 , H10B20/38 , H10B20/60 , H10B20/65 , H10B41/40 , H10B41/49 , H03K19/17728 , H01L25/065 , H01L21/8238 , H01L29/66143 , H01L29/872 , H01L31/03762 , H01L31/07 , H01L28/20 , Y02E10/50 , H01L2924/0002
摘要： A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P— and N—Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.
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7.发明授权公开(公告)号：US11715809B2
公开(公告)日：2023-08-01
申请号：US17358980
申请日：2021-06-25
发明人： Parthiban Santhanam , Shanhui Fan
IPC分类号： H01L31/109 , H01L33/00 , H01L31/072 , H01L33/06 , H01L33/14
CPC分类号： H01L31/109 , H01L31/072 , H01L33/002 , H01L33/06 , H01L33/14
摘要： Shockley-Read-Hall (SRH) generation and/or recombination in heterojunction devices is suppressed by unconventional doping at or near the heterointerface. The effect of this doping is to shift SRH generation and/or recombination preferentially into the wider band gap material of the heterojunction. This reduces total SRH generation and/or recombination in the device by decreasing the intrinsic carrier concentration ni at locations where most of the SRH generation and/or recombination occurs. The physical basis for this effect is that the SRH generation and/or recombination rate tends to decrease as ni around the depletion region decreases, so decreasing the effective ni in this manner is a way to decrease SRH recombination.
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公开(公告)号：US11605750B2
公开(公告)日：2023-03-14
申请号：US17183164
申请日：2021-02-23
申请人： SunPower Corporation
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L21/00 , H01L31/0747 , H01L31/068 , H01L31/0745 , H01L31/072 , H01L31/0216 , H01L31/18 , H01L31/0224 , H01L31/0236
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
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公开(公告)号：US11563132B2
公开(公告)日：2023-01-24
申请号：US16563994
申请日：2019-09-09
IPC分类号： H01L31/0445 , H02S40/38 , H01L31/0224 , H01L31/032 , H01L31/0687 , H01L31/072 , H01L31/0725
摘要： A solar cell of an embodiment includes: a p-electrode in which a first p-electrode and a second p-electrode are laminated; a p-type light-absorbing layer in direct contact with the first p-electrode; an n-type layer in direct contact with the p-type light-absorbing layer; and an n-electrode. The first p-electrode is disposed between the p-type light-absorbing layer and the second p-electrode. The p-type light-absorbing layer is disposed between the n-type layer and the first p-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. The first p-electrode includes a metal oxide containing Sn as a main component.
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10.发明授权公开(公告)号：US11557688B2
公开(公告)日：2023-01-17
申请号：US16567684
申请日：2019-09-11
IPC分类号： H01L31/0725 , H01L31/0216 , H01L31/0224 , H01L31/032 , H01L31/075 , H01L31/072
摘要： A solar cell of an embodiment includes: a substrate; an n-electrode; an n-type layer; a p-type light absorption layer which is a semiconductor of a Cu-based oxide; and a p-electrode. The n-electrode is disposed between the substrate and the n-type layer. The n-type layer is disposed between the n-electrode and the p-type light absorption layer. The p-type light absorption layer is disposed between the n-type layer and the p-electrode. The n-type layer is disposed closer to a light incident side than the p-type light absorption layer. The substrate is a single substrate included in the solar cell.
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