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公开(公告)号：US11967657B2
公开(公告)日：2024-04-23
申请号：US16841541
申请日：2020-04-06
发明人： Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号： H01L31/0224 , H01L31/0236 , H01L31/028 , H01L31/0475 , H01L31/05 , H01L31/068 , H01L31/0745
CPC分类号： H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/50
摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
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公开(公告)号：US11935972B2
公开(公告)日：2024-03-19
申请号：US17738984
申请日：2022-05-06
IPC分类号： H01L31/0224 , H01L31/0236 , H01L31/0352 , H01L31/05 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/20
CPC分类号： H01L31/022441 , H01L31/022425 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/0516 , H01L31/0682 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/1804 , H01L31/202 , Y02E10/50 , Y02E10/546 , Y02E10/547 , Y02E10/548
摘要： Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.
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公开(公告)号：US20230238471A1
公开(公告)日：2023-07-27
申请号：US18126277
申请日：2023-03-24
发明人： Peter J. Cousins , David D. Smith , Seung Bum Rim
IPC分类号： H01L31/0747 , H01L31/0216 , H01L31/068 , H01L31/18 , H01L31/0236 , H01L31/0368 , H01L31/0224 , H01L31/20
CPC分类号： H01L31/0747 , H01L31/182 , H01L31/202 , H01L31/0682 , H01L31/1804 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/03682 , H01L31/022425 , H01L31/022433 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/50
摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.
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公开(公告)号：US20230197877A1
公开(公告)日：2023-06-22
申请号：US18107917
申请日：2023-02-09
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L31/0747 , H01L31/068 , H01L31/0745 , H01L31/072 , H01L31/0216 , H01L31/18 , H01L31/0224 , H01L31/0236
CPC分类号： H01L31/0747 , H01L31/0682 , H01L31/0745 , H01L31/072 , H01L31/02167 , H01L31/068 , H01L31/18 , H01L31/022441 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/50
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
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公开(公告)号：US11942565B2
公开(公告)日：2024-03-26
申请号：US17021930
申请日：2020-09-15
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/1864 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/50
摘要： Methods of fabricating solar cell emitter regions using substrate-level ion implantation, and resulting solar cells, are described. In an example, a method of fabricating a solar cell involves forming a lightly doped region in a semiconductor substrate by ion implantation, the lightly doped region of a first conductivity type of a first concentration. The method also involves forming a first plurality of dopant regions of the first conductivity type of a second, higher, concentration by ion implantation, the first plurality of dopant regions overlapping with a first portion of the lightly doped region. The method also involves forming a second plurality of dopant regions by ion implantation, the second plurality of dopant regions having a second conductivity type of a concentration higher than the first concentration, and the second plurality of dopant regions overlapping with a second portion of the lightly doped region and alternating with but not overlapping the first plurality of dopant regions.
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公开(公告)号：US12074240B2
公开(公告)日：2024-08-27
申请号：US17529719
申请日：2021-11-18
发明人： David D. Smith
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/18 , H01L31/0352 , H01L31/0236 , H01L31/028 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/0368 , H01L31/02
CPC分类号： H01L31/0682 , H01L31/02008 , H01L31/028 , H01L31/02167 , H01L31/02363 , H01L31/02366 , H01L31/022425 , H01L31/022441 , H01L31/022458 , H01L31/03682 , H01L31/035272 , H01L31/035281 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/182 , H01L31/1804 , Y02E10/546 , Y02E10/547 , Y02P70/50
摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.
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公开(公告)号：US12009449B2
公开(公告)日：2024-06-11
申请号：US18107917
申请日：2023-02-09
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L21/00 , H01L31/0216 , H01L31/0224 , H01L31/0236 , H01L31/068 , H01L31/072 , H01L31/0745 , H01L31/0747 , H01L31/18
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/50
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
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公开(公告)号：US11967655B2
公开(公告)日：2024-04-23
申请号：US16918218
申请日：2020-07-01
发明人： Seung Bum Rim , David D. Smith
IPC分类号： H01L31/0216 , H01L27/142 , H01L31/0224 , H01L31/0443 , H01L31/0745
CPC分类号： H01L31/02167 , H01L27/1421 , H01L31/022441 , H01L31/0443 , H01L31/0745 , Y02E10/50
摘要： A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions.
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9.发明公开公开(公告)号：US20230275175A1
公开(公告)日：2023-08-31
申请号：US18143940
申请日：2023-05-05
发明人： David D. Smith
IPC分类号： H01L31/068 , H01L31/18 , H01L31/028 , H01L31/0236
CPC分类号： H01L31/068 , H01L31/182 , H01L31/028 , H01L31/02366
摘要： A solar cell, and methods of fabricating said solar cell, are disclosed. The solar cell can include a substrate having a light-receiving surface and a back surface. The solar cell can include a first semiconductor region of a first conductivity type disposed on a first dielectric layer, wherein the first dielectric layer is disposed on the substrate. The solar cell can also include a second semiconductor region of a second, different, conductivity type disposed on a second dielectric layer, where a portion of the second thin dielectric layer is disposed between the first and second semiconductor regions. The solar cell can include a third dielectric layer disposed on the second semiconductor region. The solar cell can include a first conductive contact disposed over the first semiconductor region but not the third dielectric layer. The solar cell can include a second conductive contact disposed over the second semiconductor region, where the second conductive contact is disposed over the third dielectric layer and second semiconductor region. In an embodiment, the third dielectric layer can be a dopant layer.
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