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公开(公告)号：US12132522B1
公开(公告)日：2024-10-29
申请号：US18214191
申请日：2023-06-26
发明人： Haipeng Zhang , Junwen Zhang , Mu Xu , Zhensheng Jia , Luis Alberto Campos
CPC分类号： H04B10/504 , G02B27/283 , G02B27/286 , G02F1/218 , H01S5/3224 , H01S5/32391 , H04B10/25 , H04B10/5161 , G02F1/212
摘要： An optical full-field transmitter for an optical communications network includes a primary laser source configured to provide a narrow spectral linewidth for a primary laser signal, and a first intensity modulator in communication with a first amplitude data source. The first intensity modulator is configured to output a first amplitude-modulated optical signal from the laser signal. The transmitter further includes a first phase modulator in communication with a first phase data source and the first amplitude-modulated optical signal. The first phase modulator is configured to output a first two-stage full-field optical signal. The primary laser source has a structure based on a III-V compound semiconductor.
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公开(公告)号：US20240235163A9
公开(公告)日：2024-07-11
申请号：US18548782
申请日：2022-03-04
申请人： 3SP Technologies
发明人： Mauro BETTIATI
IPC分类号： H01S5/32
CPC分类号： H01S5/3216
摘要： The present invention relates to a semiconductor optoelectronic device (10) comprising a junction (12) consisting a stack of layers defining an N-doped region, an intermediate region and a P-doped region, at least one layer, called a modulated layer, of the N-doped region and/or of the P-doped region and/or of the intermediate region, being formed of a plurality of stacks of sub-layers, each sub-layer differing from the other sub-layers of the same stack by a feature of the material of the sub-layer, called a distinctive feature, the thicknesses and distinctive features of the sub-layers being chosen so as to reduce the absorption of photons in the corresponding region compared with a semiconductor optoelectronic device, known as a reference device, the only difference being that each modulated layer is replaced by an unmodulated layer of the same thickness as the modulated layer and with identical features except for the distinctive feature.
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公开(公告)号：US12007504B2
公开(公告)日：2024-06-11
申请号：US16801231
申请日：2020-02-26
申请人： Vixar, Inc.
IPC分类号： G01S7/481 , H01S5/0234 , H01S5/026 , H01S5/042 , H01S5/062 , H01S5/183 , H01S5/32 , H01S5/42
CPC分类号： G01S7/4815 , G01S7/4813 , H01S5/0234 , H01S5/0264 , H01S5/04256 , H01S5/06203 , H01S5/18305 , H01S5/32 , H01S5/423
摘要： Systems and methods disclosed herein include an illumination module for 3D sensing applications. The illumination module may include an array of vertical cavity surface emitting lasers (VCSELs) emitting light, a driver configured to provide current to the array of VCSELs, and an optical element configured to receive the light emitted by the array of VCSELs and output a light pattern from the illumination module.
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公开(公告)号：US11967800B2
公开(公告)日：2024-04-23
申请号：US18199960
申请日：2023-05-21
发明人： Chien Hung Pan , Cheng Zu Wu
CPC分类号： H01S5/11 , H01S5/1215 , H01S5/124 , H01S5/183 , H01S5/185 , H01S5/3211 , H01S2304/04
摘要： The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula:
∧
=
m
λ
2
⋆
n
eff
;
in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula:
∧
=
o
λ
2
⋆
n
eff
.
Wherein ∧ is the length of grating period, λ is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2. The first grating region is a first-order grating region, and the second grating region is a second-order grating region, so as to form a hybrid grating structure in the grating layer. The surface emitting laser emits laser light perpendicularly from a light-emitting surface defined by the second grating region.-
5.发明授权公开(公告)号：US11909175B2
公开(公告)日：2024-02-20
申请号：US17148408
申请日：2021-01-13
申请人： Apple Inc.
发明人： Chih-Wei Chuang , Peter L. Chang , Tong Chen
CPC分类号： H01S5/187 , H01S5/028 , H01S5/0262 , H01S5/0264 , H01S5/18 , H01S5/3202 , H01S5/0287
摘要： An optoelectronic device includes an off-cut III-V semiconductor substrate, a set of epitaxial layers formed on the off-cut III-V semiconductor substrate, and a horizontal cavity surface-emitting laser (HCSEL) having a laser resonant cavity formed in the set of epitaxial layers. The same or another optoelectronic device includes a semiconductor substrate; a laser, epitaxially grown on the semiconductor substrate and having a laser resonant cavity; a semiconductor device, epitaxially grown on the semiconductor substrate and separated from the laser by a single trench having a first vertical wall abutting the laser and a second vertical wall abutting the semiconductor device; and at least one coating on at least one of the first vertical wall or the second vertical wall. The laser resonant cavity of the laser has a horizontal portion parallel to the semiconductor substrate, and each of the first vertical wall and the second vertical wall is oriented perpendicular to the semiconductor substrate.
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公开(公告)号：US20240027766A1
公开(公告)日：2024-01-25
申请号：US18116735
申请日：2023-03-02
发明人： Paul Rudy , James W. Raring , Eric Goutain , Hua Huang
CPC分类号： G02B27/0172 , G02B6/00 , G02B27/017 , H01S5/4093 , H01S5/320275 , G02B2027/0178 , G02B27/4272
摘要： The present invention is directed to wearable display technologies. More specifically, various embodiments of the present invention provide wearable augmented reality glasses incorporating projection display systems where one or more laser diodes are used as light source for illustrating images with optical delivery to the eye using transparent waveguides. In one set of embodiments, the present invention provides wearable augmented reality glasses incorporating projector systems that utilize transparent waveguides and blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides wearable augmented reality glasses incorporating projection systems having digital lighting processing engines illuminated by blue and/or green laser devices with optical delivery to the eye using transparent waveguides. In one embodiment, the present invention provides wearable augmented reality glasses incorporating a 3D display system with optical delivery to the eye using transparent waveguides. There are other embodiments as well.
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公开(公告)号：US11817675B1
公开(公告)日：2023-11-14
申请号：US17142109
申请日：2021-01-05
发明人： James W. Raring , Paul Rudy
IPC分类号： H01S5/042 , H01S5/323 , H01S5/343 , H01S5/40 , H01S5/00 , H01S5/02325 , F21S2/00 , H04N9/77 , H01S3/16 , H01S5/02208 , H01S5/026 , H01S5/22 , H01S5/02212 , H04N9/31 , F41H13/00 , H01S5/32 , F21V23/02
CPC分类号： H01S5/0428 , F21S2/00 , F41H13/0056 , H01S3/1603 , H01S3/1643 , H01S5/005 , H01S5/02208 , H01S5/02325 , H01S5/32341 , H01S5/34333 , H01S5/4012 , H04N9/77 , F21V23/02 , H01S5/026 , H01S5/02212 , H01S5/042 , H01S5/22 , H01S5/320275 , H01S5/4031 , H01S5/4087 , H04N9/31
摘要： A laser illumination or dazzler device and method. More specifically, examples of the present invention provide laser illumination or dazzling devices power by one or more violet, blue, or green laser diodes characterized by a wavelength from about 390 nm to about 550 nm. In some examples the laser illumination or dazzling devices include a laser pumped phosphor wherein a laser beam with a first wavelength excites a phosphor member to emit electromagnetic at a second wavelength. In various examples, laser illumination or dazzling devices according to the present invention include polar, non-polar, or semi-polar laser diodes. In a specific example, a single laser illumination or dazzling device includes a plurality of violet, blue, or green laser diodes. There are other examples as well.
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公开(公告)号：US11804691B2
公开(公告)日：2023-10-31
申请号：US17321337
申请日：2021-05-14
申请人： X Development LLC
CPC分类号： H01S5/0035 , H01S5/0285 , H01S5/0287 , H01S5/065 , H01S5/0651 , H01S5/1003 , H01S5/1028 , H01S5/20 , H01S5/2027 , H01S5/2031 , H01S5/22 , H01S5/32 , H01S5/34 , H01S2301/16
摘要： Methods for designing a mode-selective optical device including one or more optical interfaces defining an optical cavity include: defining a loss function within a simulation space encompassing the optical device, the loss function corresponding to an electromagnetic field having an operative wavelength within the optical device resulting from an interaction between an input electromagnetic field at the operative wavelength and the one or more optical interfaces of the optical device; defining an initial structure for each of the one or more optical interfaces, each initial structure being defined using a plurality of voxels; determining values for at least one structural parameter and/or at least one functional parameter of the one or more optical interfaces by solving Maxwell's equations; and defining a final structure of the one or more optical interfaces based on the values for the one or more structural and/or functional parameters.
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公开(公告)号：US11791609B2
公开(公告)日：2023-10-17
申请号：US17033763
申请日：2020-09-26
发明人： Chien Hung Pan , Cheng Zu Wu
CPC分类号： H01S5/11 , H01S5/124 , H01S5/1215 , H01S5/183 , H01S5/185 , H01S5/3211 , H01S2304/04
摘要： The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula:
⋀
=
m
λ
2
*
n
eff
;
in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula:
⋀
=
o
λ
2
*
n
eff
.
Wherein, Λ is the length of grating period, λ is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2. The first grating region is a first-order grating region, and the second grating region is a second-order grating region, so as to form a hybrid grating structure in the grating layer. The surface emitting laser emits laser light perpendicularly from a light-emitting surface defined by the second grating region.-
公开(公告)号：US20230327405A1
公开(公告)日：2023-10-12
申请号：US18044193
申请日：2020-11-06
CPC分类号： H01S5/2232 , H01S5/3213 , H01S5/02469 , H01S5/18344
摘要： An optical semiconductor device of the present disclosure comprises: a ridge structure formed on a first-conductivity-type semiconductor substrate; a buried layer buried on both side surfaces of the ridge structure; a second-conductivity-type second cladding layer and a second-conductivity-type contact layer laminated on the top of the ridge structure and the surface of the buried layer; a stripe-shaped mesa structure formed of a mesa reaching from the second-conductivity-type contact layer to the first-conductivity-type semiconductor substrate; a heat dissipation layer formed on the surface of the second-conductivity-type contact layer; a mesa protective film covering both side surfaces of the mesa structure and both end portions of the surface of the second-conductivity-type contact layer; and a second-conductivity-type-side electrode electrically connected to the second-conductivity-type contact layer.
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