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公开(公告)号：US20230327405A1
公开(公告)日：2023-10-12
申请号：US18044193
申请日：2020-11-06
CPC分类号： H01S5/2232 , H01S5/3213 , H01S5/02469 , H01S5/18344
摘要： An optical semiconductor device of the present disclosure comprises: a ridge structure formed on a first-conductivity-type semiconductor substrate; a buried layer buried on both side surfaces of the ridge structure; a second-conductivity-type second cladding layer and a second-conductivity-type contact layer laminated on the top of the ridge structure and the surface of the buried layer; a stripe-shaped mesa structure formed of a mesa reaching from the second-conductivity-type contact layer to the first-conductivity-type semiconductor substrate; a heat dissipation layer formed on the surface of the second-conductivity-type contact layer; a mesa protective film covering both side surfaces of the mesa structure and both end portions of the surface of the second-conductivity-type contact layer; and a second-conductivity-type-side electrode electrically connected to the second-conductivity-type contact layer.
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公开(公告)号：US20200274318A1
公开(公告)日：2020-08-27
申请号：US16614345
申请日：2017-10-03
摘要： A semiconductor optical integrated device according to the present invention includes a conductive substrate, a laser provided to the conductive substrate, a semi-insulating semiconductor layer provided on the conductive substrate, a photodiode provided on the semi-insulating semiconductor layer and a waveguide that is provided on the conductive substrate and guides output light of the laser to the photodiode, wherein an anode of the photodiode and a cathode of the photodiode are drawn from an upper surface side of the photodiode, and the waveguide and the photodiode are separated from each other by the semi-insulating semiconductor layer.
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公开(公告)号：US20240297479A1
公开(公告)日：2024-09-05
申请号：US18697905
申请日：2021-10-19
发明人： Shogo ITO , Keisuke MATSUMOTO
CPC分类号： H01S5/02453 , H01S5/0268 , H01S5/04256 , H01S5/06246 , H01S5/2009
摘要： An optical semiconductor comprises a semiconductor substrate and a semiconductor structure part including an optical waveguide layer that is formed on the semiconductor substrate. The semiconductor structure part includes a cladding layer connected to a first face that is the face on the side of the semiconductor substrate in the optical waveguide layer and to a second face that is the face on the opposite side of the semiconductor substrate, and a heater layer made of a semiconductor material to heat the optical waveguide layer from the side of the first face or/and from the side of the second face in the optical waveguide layer through the cladding layer.
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公开(公告)号：US20160268768A1
公开(公告)日：2016-09-15
申请号：US14925514
申请日：2015-10-28
发明人： Keisuke MATSUMOTO
CPC分类号： H01S5/2081 , G02B6/00 , G02B6/136 , G02B2006/12078 , G02B2006/12097 , H01L21/308 , H01S5/026 , H01S5/0265 , H01S5/2226 , H01S5/2275 , H01S5/3219 , H01S5/34386
摘要： A second insulating film, which includes a hollowed portion inside in a region where the high mesa ridge type optical element is formed, is formed. By using the second insulating film as a mask and etching, a concave portion is formed in the transparent waveguide layer and the upper cladding layer below the hollowed portion. The modulator layer having the Al-based material is formed. By etching with the modulator layer formed in the concave portion being covered with the third insulating film, the modulator layer formed outside the concave portion is removed. By etching with the modulator layer formed in the concave portion being covered with the fourth insulating film, the ridge of the semiconductor laser is formed without exposing the modulator layer formed in the concave portion.
摘要翻译： 形成第二绝缘膜，其在形成有高台面状棱镜型光学元件的区域内部包括中空部。 通过使用第二绝缘膜作为掩模和蚀刻，在透明波导层和中空部分下方的上包层形成凹部。 形成具有Al基材料的调制层。 通过用形成在由第三绝缘膜覆盖的凹部中形成的调制层进行蚀刻，除去形成在凹部外侧的调制层。 通过用形成在由第四绝缘膜覆盖的凹部中形成的调制层来进行蚀刻，形成半导体激光器的脊而不暴露形成在凹部中的调制层。
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公开(公告)号：US20220116117A1
公开(公告)日：2022-04-14
申请号：US17428624
申请日：2019-05-27
摘要： An optical device includes: lasers output first light from a front-end side and output second light from a rear-end side; an optical multiplexer circuit multiplex respective rays of the first light, to thereby send out output light; waveguides guide respective rays of the second light toward one end face of the optical device; and light detectors receive respective rays of reflected light that are due to reflection of the respective rays of the second light after being guided by the waveguides, on the one end face or on respective inclined end faces in concave portions formed on that one end face. The light detector is located between the rear-end side of the laser and the one end face or the inclined end face, and the second light is outputted diagonally relative to a perpendicular line with respect to the one end face or the inclined end face.
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公开(公告)号：US20210044082A1
公开(公告)日：2021-02-11
申请号：US16965621
申请日：2018-04-23
摘要： A semiconductor optical integrated device comprises a semiconductor amplifier and a plurality of semiconductor lasers, wherein the semiconductor amplifier and the semiconductor lasers are monolithically integrated on a semiconductor substrate, an n-side cladding layer of the semiconductor amplifier and an n-side cladding layer of each of the semiconductor lasers are electrically insulated by an insulating layer formed between the semiconductor substrate and the n-side cladding layer of the semiconductor lasers and an insulating layer formed between the n-side cladding layer of the semiconductor amplifier and the n-side cladding layer of the semiconductor lasers, the n-side cladding layer of the semiconductor lasers and the p-side cladding layer of the semiconductor amplifier is configured to be electrically connected, and the semiconductor amplifier and each semiconductor laser of the plurality of semiconductor lasers are electrically connected in series.
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公开(公告)号：US20230045980A1
公开(公告)日：2023-02-16
申请号：US17787893
申请日：2020-01-28
发明人： Keisuke MATSUMOTO , Ryoko SUZUKI
摘要： Provided here are: a mesa strip which has an n-type cladding layer, an active layer and a p-type cladding layer that are stacked sequentially on a surface of an n-type substrate; Fe-doped semi-insulating layers which are embedded along both sides of the mesa stripe, each up to a height higher than the mesa stripe; n-type blocking layers which are stacked on respective surfaces of the Fe-doped semi-insulating layers located on the both sides of the mesa stripe, and which are spaced apart from each other with an interval that is a space corresponding to a central portion of the active layer and is thus narrower than the active layer; p-type cladding layers which are formed on back surfaces of respective mesa-stripe-side end portions of the n-type blocking layers; and a p-type cladding layer which buries a top of the mesa stripe, the p-type cladding layers and the n-type blocking layers.
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