公开(公告)号：US11698544B2

公开(公告)日：2023-07-11

申请号：US17864591

申请日：2022-07-14

申请人： OpenLight Photonics, Inc.

发明人： Jonathan Edgar Roth ,  Erik Norberg

IPC分类号： G02F1/025 ,  G02F1/017 ,  G02F1/00 ,  G02B6/12 ,  G02F1/01 ,  G02B6/136 ,  G02B6/122 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/024

CPC分类号： G02F1/025 ,  G02B6/12002 ,  G02B6/1228 ,  G02B6/136 ,  G02F1/0018 ,  G02F1/0121 ,  G02F1/0147 ,  G02F1/01708 ,  B82Y20/00 ,  G02B2006/12061 ,  G02B2006/12078 ,  G02B2006/12142 ,  G02B2006/12195 ,  H01L31/024 ,  H01L31/035209

摘要： A device, such as an electroabsorption modulator, can modulate a light intensity by controllably absorbing a selectable fraction of the light. The device can include a substrate. A waveguide positioned on the substrate can guide light. An active region positioned on the waveguide can receive guided light from the waveguide, absorb a fraction of the received light, and return a complementary fraction of the received light to the waveguide. Such absorption produces heat, mostly at an input portion of the active region. The input portion of the active region can be thermally coupled to the substrate, which can dissipate heat from the input portion, and can help avoid thermal runaway of the device. The active region can be thermally isolated from the substrate away from the input portion, which can maintain a relatively low thermal mass for the active region, and can increase efficiency when heating the active region.

公开(公告)号：US20190237596A1

公开(公告)日：2019-08-01

申请号：US16378601

申请日：2019-04-09

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chul Soo Kim ,  Charles D. Merritt ,  Michael V. Warren ,  Mijin Kim

IPC分类号： H01L31/0232 ,  H01L31/0304 ,  G01N21/552 ,  G01N21/00 ,  G02B6/12 ,  H01L31/105 ,  H01L31/109 ,  G02B6/124

CPC分类号： H01L31/02327 ,  G01N21/00 ,  G01N21/3504 ,  G01N21/552 ,  G01N21/7746 ,  G02B6/12004 ,  G02B6/124 ,  G02B2006/12061 ,  G02B2006/12078 ,  G02B2006/12123 ,  G02B2006/12138 ,  H01L31/02325 ,  H01L31/03046 ,  H01L31/035209 ,  H01L31/035236 ,  H01L31/105 ,  H01L31/109

摘要： Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAs—GaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a “W”-structured quantum well situated between two barrier layers, the “W”-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

公开(公告)号：US20190044066A1

公开(公告)日：2019-02-07

申请号：US15928220

申请日：2018-03-22

申请人： INTEL CORPORATION

发明人： Nicole K. Thomas ,  Marko Radosavljevic ,  Sansaptak Dasgupta ,  Ravi Pillarisetty ,  Kanwaljit Singh ,  Hubert C. George ,  Jeanette M. Roberts ,  David J. Michalak ,  Roman Caudillo ,  Zachary R. Yoscovits ,  Lester Lampert ,  James S. Clarke

IPC分类号： H01L49/00 ,  G02B6/12 ,  G06N99/00

CPC分类号： H01L49/006 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  G02B6/12004 ,  G02B2006/12078 ,  G02B2006/12142 ,  G06N10/00 ,  Y10S977/814 ,  Y10S977/933

摘要： Embodiments of the present disclosure propose two methods for integrating vacancy centers (VCs) on semiconductor substrates for forming VC-based spin qubit devices. The first method is based on using a self-assembly process for integrating VC islands on a semiconductor substrate. The second method is based on using a buffer layer of a III-N semiconductor material over a semiconductor substrate, and then integrating VC islands in an insulating carbon-based material such as diamond that is either grown as a layer on the III-N buffer layer or grown in the openings formed in the III-N buffer layer. Integration of VC islands on semiconductor substrates typically used in semiconductor manufacturing according to any of these methods may provide a substantial improvement with respect to conventional approaches to building VC-based spin qubit devices and may promote wafer-scale integration of VC-based spin qubits for use in quantum computing devices.

公开(公告)号：US09989467B2

公开(公告)日：2018-06-05

申请号：US15432696

申请日：2017-02-14

申请人： International Business Machines Corporation

发明人： Yann A. N. Astier ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC分类号： H01L31/16 ,  G01N21/64 ,  G02B6/132 ,  H01L33/32 ,  G02B6/122 ,  G02B6/12 ,  H01L33/00 ,  H01L31/0304 ,  H01L27/14 ,  H01L27/15

CPC分类号： G01N21/6454 ,  B01L3/502707 ,  B01L3/502715 ,  B01L2300/0654 ,  G01N15/1436 ,  G01N15/1459 ,  G01N15/1484 ,  G01N21/6428 ,  G01N21/645 ,  G01N2015/1006 ,  G01N2021/6439 ,  G01N2021/6482 ,  G01N2201/0873 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12078 ,  G02B2006/12123 ,  H01L27/14 ,  H01L27/15 ,  H01L31/03044 ,  H01L31/16 ,  H01L33/007 ,  H01L33/32

摘要： A semiconductor structure includes a first optical waveguide and a second optical waveguide located on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate.

公开(公告)号：US09946021B1

公开(公告)日：2018-04-17

申请号：US15642354

申请日：2017-07-06

申请人： National Sun Yat-sen University

发明人： Yi-Jen Chiu ,  Po-Yun Wang ,  Wei Lin ,  Yang-Jeng Chen

IPC分类号： H01L21/00 ,  G02B6/13 ,  G02B6/122 ,  G02B6/12

CPC分类号： G02B6/13 ,  G02B6/122 ,  G02B2006/12038 ,  G02B2006/12078 ,  G02B2006/12169 ,  H01S5/00

摘要： A method for fabricating a waveguide construction is described and has steps of: providing a layered structure by: forming a first-type InGaAsP layer on a substrate, forming a first-type InP layer on the first-type InGaAsP layer, forming an active layer containing gallium on the first-type InP layer, forming a second-type InP layer on the active layer, and forming a second-type InGaAsP layer on the second-type InP layer; forming an SiO2 patterned layer having SiO2 regions and at least one channel facing toward a desired direction and formed between the SiO2 regions on the second-type InGaAsP layer; and performing a rapid thermal annealing treatment on the layered structure formed with the SiO2 patterned layer. The rapid thermal annealing treatment has a treating temperature between 720° C. and 760° C. and a treating time between 60 and 240 seconds.

公开(公告)号：US20170205350A1

公开(公告)日：2017-07-20

申请号：US15432719

申请日：2017-02-14

申请人： International Business Machines Corporation

发明人： Yann A. N. Astier ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC分类号： G01N21/64 ,  G02B6/132 ,  G02B6/13 ,  H01L31/16 ,  G02B6/12 ,  H01L33/32 ,  H01L33/00 ,  H01L31/0304 ,  G02B6/136 ,  G02B6/122

CPC分类号： G01N21/6454 ,  B01L3/502707 ,  B01L3/502715 ,  B01L2300/0654 ,  G01N15/1436 ,  G01N15/1459 ,  G01N15/1484 ,  G01N21/6428 ,  G01N21/645 ,  G01N2015/1006 ,  G01N2021/6439 ,  G01N2021/6482 ,  G01N2201/0873 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12078 ,  G02B2006/12123 ,  H01L27/14 ,  H01L27/15 ,  H01L31/03044 ,  H01L31/16 ,  H01L33/007 ,  H01L33/32

摘要： A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.

公开(公告)号：US09588289B1

公开(公告)日：2017-03-07

申请号：US15002041

申请日：2016-01-20

申请人： International Business Machines Corporation

发明人： Yann A. N. Astier ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC分类号： G02B6/13 ,  G02B6/12 ,  G02B6/136 ,  G02B6/132

CPC分类号： G01N21/6454 ,  B01L3/502707 ,  B01L3/502715 ,  B01L2300/0654 ,  G01N15/1436 ,  G01N15/1459 ,  G01N15/1484 ,  G01N21/6428 ,  G01N21/645 ,  G01N2015/1006 ,  G01N2021/6439 ,  G01N2021/6482 ,  G01N2201/0873 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12078 ,  G02B2006/12123 ,  H01L27/14 ,  H01L27/15 ,  H01L31/03044 ,  H01L31/16 ,  H01L33/007 ,  H01L33/32

摘要： A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.

摘要翻译： 形成半导体结构的方法包括在蓝宝石衬底上形成第一光波导和第二光波导。 第一光波导和第二光波导均包括氮化镓（GaN）的核心部分和横向包围核心部分的包层。 包覆层包括折射率小于蓝宝石衬底的折射率的材料。 该方法还包括蚀刻包层的一部分以在其中形成微流体通道，并在第一光波导，第二光波导和微流体通道的顶表面上形成覆盖层。

公开(公告)号：US20160327741A1

公开(公告)日：2016-11-10

申请号：US15063722

申请日：2016-03-08

申请人： ArtIC Photonics Inc.

发明人： Fang WU ,  Yury LOGVIN ,  Kirill Y. Pimenov ,  Christopher D. Watson ,  Yongbo Tang

IPC分类号： G02B6/125 ,  G02B6/13 ,  G02B6/126 ,  G02B6/122 ,  G02B6/124 ,  G02B6/12 ,  G02B6/136

CPC分类号： G02B6/125 ,  G02B6/12002 ,  G02B6/1228 ,  G02B6/124 ,  G02B6/126 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12078 ,  G02B2006/12121 ,  G02B2006/12128 ,  G02B2006/12142 ,  G02B2006/12147 ,  G02B2006/1215 ,  G02B2006/12164 ,  H04B10/2507 ,  H04B10/2581

摘要： The invention describes an integrated photonics platform comprising a plurality of at least three vertically-stacked waveguides which enables light transfer from one waveguide of the photonic structure into another waveguide by means of controlled tunneling method. The light transfer involves at least three waveguides wherein light power flows from initial waveguide into the final waveguide whilst tunneling through the intermediate ones. As an exemplary realization of the controlled tunneling waveguide integration, the invention describes a photonic integrated structure consisting of laser guide as upper waveguide, passive guide as middle waveguide, and modulator guide as lower waveguides. Controlled tunneling is enabled by the overlapped lateral tapers formed on the same or different vertical waveguide levels. In the further embodiments, the controlled tunneling platform is modified to implement wavelength-(de)multiplexing, polarization-splitting and beam-splitting functions.

摘要翻译： 本发明描述了一种集成光子平台，其包括多个至少三个垂直堆叠的波导，其使得能够通过受控的隧道方法从光子结构的一个波导光传输到另一个波导。 光传输涉及至少三个波导，其中光功率从初始波导流入最终波导，同时隧道穿过中间波导。 作为受控隧道波导集成的示例性实现，本发明描述了由作为上波导的激光导向器，被动导向器作为中间波导和作为下波导的调制器引导件组成的光子集成结构。 通过在相同或不同的垂直波导级上形成的重叠的横向锥度来实现受控隧道。 在另外的实施例中，受控的隧道平台被修改以实现波长（de）复用，偏振分解和光束分离功能。

公开(公告)号：US09310561B1

公开(公告)日：2016-04-12

申请号：US14522415

申请日：2014-10-23

申请人： Aurrion, Inc.

发明人： Jonathan Edgar Roth

IPC分类号： G02B6/26 ,  G02B6/42 ,  G02B6/00 ,  G02B6/27 ,  G02B6/293 ,  G02F1/313 ,  G02B6/12 ,  G02F1/01

CPC分类号： G02B6/2773 ,  G02B6/126 ,  G02B6/2766 ,  G02B6/2793 ,  G02B6/2932 ,  G02B6/34 ,  G02B6/4213 ,  G02B2006/12061 ,  G02B2006/12078 ,  G02B2006/12147 ,  G02F1/0136 ,  G02F1/3132 ,  G02F1/3133 ,  H01S5/5009

摘要： Embodiments describe optical devices including a first waveguide, comprising a first cross-sectional area, to receive a light comprising a first optical mode, and a second waveguide, adjacent to the first waveguide, to receive a light comprising a second optical mode orthogonal to the first optical mode. The second waveguide comprises a second cross-sectional area different than the first waveguide such that an absorption/gain coefficient of the second waveguide for light comprising the second optical mode is equal to an absorption/gain coefficient of the first waveguide for light comprising the first optical mode. The optical devices may comprise modulators, photodetectors, or semiconductor optical amplifiers (SOAs).

摘要翻译： 实施例描述了包括第一波导的光学器件，其包括第一横截面区域，以接收包括第一光学模式的光和与第一波导相邻的第二波导，以接收包括与第一波导正交的第二光学模式的光 第一光模式。 第二波导包括与第一波导不同的第二横截面积，使得包括第二光学模式的光的第二波导的吸收/增益系数等于第一波导对于包括第一波导的第一波导的吸收/增益系数 光学模式。 光学器件可以包括调制器，光电检测器或半导体光放大器（SOA）。

公开(公告)号：US20160087398A1

公开(公告)日：2016-03-24

申请号：US14850285

申请日：2015-09-10

申请人： KABUSHIKI KAISHA TOSHIBA ,  Photonics Electronics Technology Research Association

发明人： Haruhiko YOSHIDA ,  Kazuya OHIRA ,  Mizunori EZAKI

IPC分类号： H01S5/022 ,  H01S5/026 ,  G02B6/122

CPC分类号： G02B6/29338 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/29341 ,  G02B2006/12061 ,  G02B2006/12078 ,  H01S5/0264 ,  H01S5/1075

摘要： According to one embodiment, a semiconductor light-receiving element, includes a light-receiving part provided on a substrate and having a semiconductor multilayer structure of a circular outer shape, a optical input part formed of a peripheral portion of the semiconductor multilayer structure, and having a tapered front end, and a silicon-thin-line waveguide configured to couple light with the optical input part. The waveguide includes a linear part extending through the optical input part to an at least one area of an upper-side area and a lower-side area of the light-receiving part, and a spiral part connected to the linear part and formed in the at least one area.

摘要翻译： 根据一个实施例，半导体光接收元件包括设置在基板上并具有圆形外形的半导体多层结构的光接收部分，由半导体多层结构的周边部分形成的光输入部分，以及 具有锥形前端，以及配置成将光耦合到光学输入部分的硅 - 薄线波导管。 波导包括延伸穿过光学输入部分到光接收部分的上侧区域和下侧区域的至少一个区域的直线部分，以及连接到线性部分并形成在该光接收部分中的螺旋部分 至少一个区域。