公开(公告)号：US09810839B2

公开(公告)日：2017-11-07

申请号：US15063722

申请日：2016-03-08

Applicant: ArtIC Photonics Inc.

Inventor： Fang Wu ,  Yury Logvin ,  Kirill Y. Pimenov ,  Christopher D. Watson ,  Yongbo Tang

IPC: G02B6/00 ,  G02B6/125 ,  G02B6/136 ,  H04B10/2507 ,  H04B10/2581 ,  G02B6/12 ,  G02B6/122 ,  G02B6/124 ,  G02B6/126 ,  G02B6/13

CPC classification number: G02B6/125 ,  G02B6/12002 ,  G02B6/1228 ,  G02B6/124 ,  G02B6/126 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12078 ,  G02B2006/12121 ,  G02B2006/12128 ,  G02B2006/12142 ,  G02B2006/12147 ,  G02B2006/1215 ,  G02B2006/12164 ,  H04B10/2507 ,  H04B10/2581

Abstract: The invention describes an integrated photonics platform comprising a plurality of at least three vertically-stacked waveguides which enables light transfer from one waveguide of the photonic structure into another waveguide by means of controlled tunneling method. The light transfer involves at least three waveguides wherein light power flows from initial waveguide into the final waveguide while tunneling through the intermediate ones. As an exemplary realization of the controlled tunneling waveguide integration, the invention describes a photonic integrated structure consisting of laser guide as upper waveguide, passive guide as middle waveguide, and modulator guide as lower waveguides. Controlled tunneling is enabled by the overlapped lateral tapers formed on the same or different vertical waveguide levels. In the further embodiments, the controlled tunneling platform is modified to implement wavelength-(de)multiplexing, polarization-splitting and beam-splitting functions.

公开(公告)号：US20070170417A1

公开(公告)日：2007-07-26

申请号：US11534560

申请日：2006-09-22

Applicant: John Edward Bowers

Inventor： John Edward Bowers

IPC: H01L31/00

CPC classification number: G02B6/1225 ,  G02B6/12002 ,  G02B2006/12061 ,  G02B2006/12107 ,  G02B2006/12121 ,  G02B2006/12128 ,  G02B2006/12147 ,  G02F1/01708 ,  H01L27/146 ,  H01L31/125 ,  H01L31/1852 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0261 ,  H01S5/0268 ,  H01S5/125 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/343 ,  Y02E10/544 ,  Y02P70/521

Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of III-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.

Abstract translation: 公开了硅上的光子集成电路。 通过将III-V材料的晶片作为有源区域结合到硅并去除衬底，可以使用硅衬底上的标准光刻技术来处理激光器，放大器，调制器和其它器件。 硅波导和III-V增益区之间的耦合允许集成低阈值激光器，可调激光器和其他具有免费金属氧化物半导体（CMOS）集成电路的光子集成电路。

公开(公告)号：US06895134B2

公开(公告)日：2005-05-17

申请号：US10007289

申请日：2001-11-10

Applicant: Kenneth Gerard Glogovsky ,  Charles William Lentz ,  Abdallah Ougazzaden ,  Claude Lewis Reynolds, Jr.

Inventor： Kenneth Gerard Glogovsky ,  Charles William Lentz ,  Abdallah Ougazzaden ,  Claude Lewis Reynolds, Jr.

IPC: G02B6/12 ,  G02B6/132 ,  G02B6/42 ,  H01S5/026 ,  H01S5/20 ,  H01S5/50 ,  H01L21/00 ,  H01L29/06

CPC classification number: H01S5/0265 ,  G02B6/132 ,  G02B6/42 ,  G02B2006/12128 ,  H01S5/2077 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/5045

Abstract: The invention is an optoelectronic device and method of fabrication where at least two optical devices are formed on a single semiconductor substrate, with each optical device including an active region such as a multi-quantum well region. The active devices are spatially separated and optically coupled by a passive waveguide formed over the substrate which provides butt joints with the active regions. The butt joints can be optimized independently from the active regions thus improving yield.

Abstract translation: 本发明是一种光电子器件及其制造方法，其中在单个半导体衬底上形成至少两个光学器件，每个光学器件包括诸如多量子阱区域的有源区域。 有源器件在空间上分离并通过形成在衬底上的无源波导光学耦合，其提供与有源区域的对接点。 对接接头可以独立于活性区域进行优化，从而提高产量。

公开(公告)号：US06839491B2

公开(公告)日：2005-01-04

申请号：US10037966

申请日：2001-12-21

Applicant: Oskar J. Painter ,  David W. Vernooy ,  Kerry J. Vahala

Inventor： Oskar J. Painter ,  David W. Vernooy ,  Kerry J. Vahala

IPC: G02B6/10 ,  G02B6/12 ,  G02B6/122 ,  G02B6/132 ,  G02B6/26 ,  G02B6/30 ,  G02B6/34 ,  G02F1/01 ,  G02F1/017 ,  G02F1/225 ,  G02F1/313

CPC classification number: G02F1/3137 ,  B82Y20/00 ,  G02B6/10 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/132 ,  G02B6/266 ,  G02B6/30 ,  G02B2006/12097 ,  G02B2006/12128 ,  G02B2006/12142 ,  G02B2006/12145 ,  G02B2006/12147 ,  G02B2006/12159 ,  G02B2006/12176 ,  G02F1/011 ,  G02F1/0118 ,  G02F1/01708 ,  G02F1/225 ,  G02F2201/063 ,  G02F2201/307 ,  G02F2203/15

Abstract: A multi-layer laterally-confined dispersion-engineered optical waveguide may include one multi-layer reflector stack for guiding an optical mode along a surface thereof, or may include two multi-layer reflector stacks with a core therebetween for guiding an optical mode along the core. Dispersive properties of such multi-layer waveguides enable modal-index-matching between low-index optical fibers and/or waveguides and high-index integrated optical components and efficient transfer of optical signal power therebetween. Integrated optical devices incorporating such multi-layer waveguides may therefore exhibit low (

Abstract translation: 多层横向限制的色散工程光波导可以包括一个用于沿其表面引导光学模式的多层反射器叠层，或者可以包括两个多层反射器叠层，其间具有用于引导光学模式沿着 核心。 这种多层波导的分散特性使得低折射率光纤和/或波导与高折射率集成光学部件之间的模式折射率匹配和其间的光信号功率的有效传输。 因此，结合这样的多层波导的集成光学器件可能呈现低（<3dB）的插入损耗。 将有源层（电光，电吸收，非线性光学）结合到这样的波导中使得能够以相对低电压/低强度的控制信号主动地控制光学损耗和/或模态指数。 因此，结合这样的波导的集成光学器件可能表现出较低的驱动信号要求。

公开(公告)号：US20020004253A1

公开(公告)日：2002-01-10

申请号：US09802084

申请日：2001-03-08

Inventor： Boon Siew Ooi ,  Yee Loy Lam ,  Yuen Chuen Chan ,  Yan Zhou ,  Geok Ing Ng

IPC: H01L021/00

CPC classification number: B82Y20/00 ,  G02B2006/12128 ,  H01L21/182 ,  H01S5/026 ,  H01S5/2063 ,  H01S5/2068 ,  H01S5/3413 ,  H01S5/3414

Abstract: In a method of manufacturing a photonic integrated circuit having a compound semiconductor structure having a quantum well region, the structure is irradiated using a source of photons to generate defects, the photons having energy (E) at least that of the displacement energy (ED) of at least one element of the compound semiconductor. The structure is subsequently annealed to promote quantum well intermixing. The preferred radiation source is a plasma generated using an electron cyclotron resonance (ECR) system. The structure can be masked in a differential manner to selectively intermix the structure in a spatially controlled manner by controlling the exposure portions of the structure to the source of radiation.

Abstract translation: 在制造具有量子阱区的化合物半导体结构的光子集成电路的方法中，使用光子源照射该结构以产生缺陷，具有至少能量（E）的光子至少为位移能量（ED） 的化合物半导体的至少一种元素。 随后将该结构退火以促进量子阱混合。 优选的辐射源是使用电子回旋共振（ECR）系统产生的等离子体。 可以以差分方式掩盖该结构，以通过将结构的曝光部分控制到辐射源来以空间控制的方式选择性地混合结构。

公开(公告)号：US5987046A

公开(公告)日：1999-11-16

申请号：US826533

申请日：1997-04-02

Applicant: Hirohiko Kobayashi ,  Mitsuru Ekawa ,  Nirou Okazaki ,  Shouichi Ogita ,  Haruhisa Soda ,  Haruhiko Tabuchi ,  Takuya Fujii

Inventor： Hirohiko Kobayashi ,  Mitsuru Ekawa ,  Nirou Okazaki ,  Shouichi Ogita ,  Haruhisa Soda ,  Haruhiko Tabuchi ,  Takuya Fujii

IPC: G02B6/12 ,  G02B6/30 ,  H01S5/026 ,  H01S5/10 ,  H01S5/20 ,  H01S5/227 ,  H01S5/34 ,  H01S3/18

CPC classification number: G02B6/12004 ,  G02B6/305 ,  H01S5/026 ,  G02B2006/12128 ,  G02B2006/12195 ,  H01S5/0265 ,  H01S5/1014 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/20 ,  H01S5/2272 ,  H01S5/3428 ,  Y10S438/942

Abstract: An optical semiconductor device of the present invention is provided with a core layer having a quantum well layer in that film thickness gets thinner from a inner region to an end portion in an optical waveguide region.

Abstract translation: 本发明的光半导体装置具有在光波导区域中从内部区域到端部部分的薄膜厚度的量子阱层的芯层。

公开(公告)号：US5985685A

公开(公告)日：1999-11-16

申请号：US161714

申请日：1998-09-29

Applicant: Ian F. Lealman ,  Michael J. Robertson ,  Simon D. Perrin

Inventor： Ian F. Lealman ,  Michael J. Robertson ,  Simon D. Perrin

IPC: G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  H01S3/05 ,  H01S5/026 ,  H01S5/10 ,  H01S5/16 ,  H01S5/22 ,  H01S5/227 ,  H01S5/34 ,  H01S5/343

CPC classification number: G02B6/1228 ,  B82Y20/00 ,  G02B6/305 ,  G02B6/4203 ,  H01S5/026 ,  H01S5/227 ,  G02B2006/12121 ,  G02B2006/12128 ,  G02B2006/12195 ,  H01S5/10 ,  H01S5/1014 ,  H01S5/1028 ,  H01S5/1039 ,  H01S5/1064 ,  H01S5/16 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/3406 ,  H01S5/34306

Abstract: A semiconductor optical device, for example a laser, has a composite optical waveguide including a tapered, MQW active waveguide in optical contact with a substantially planar, passive waveguide. The fundamental optical mode supported by the composite waveguide varies along the length of the composite waveguide so that, in a laser, the laser mode is enlarged and is a better match to single mode optical fibre. A method for making such semiconductor optical devices is also disclosed.

Abstract translation: 半导体光学器件，例如激光器，具有复合光波导，其包括与基本上平面的无源波导光学接触的锥形MQW有源波导。 由复合波导支持的基本光学模式沿着复合波导的长度变化，使得在激光器中，激光模式被扩大并且与单模光纤更好地匹配。 还公开了制造这种半导体光学器件的方法。

公开(公告)号：US20190129097A1

公开(公告)日：2019-05-02

申请号：US16306740

申请日：2017-05-31

Applicant: The Regents of the University of California

Inventor： Alan Young Liu ,  Justin Norman ,  Arthur Gossard ,  John Bowers

IPC: G02B6/13 ,  G02B6/136

CPC classification number: G02B6/131 ,  G02B6/136 ,  G02B2006/12078 ,  G02B2006/12121 ,  G02B2006/12128 ,  G02B2006/12178

Abstract: A silicon-photonic integrated circuit comprising a direct-bandgap-semiconductor-based active optical device that is epitaxially grown on an indirect-bandgap SOI substrate (108) is disclosed. The structure of the active optical device includes an active region (120) having quantum dots (206) made of InGaAs that are embedded in one or more confinement layers (n-InP, p-InP), where the bandgap of the confinement layers is higher than that of the quantum dots. Further the confinement-layer material is preferably lattice matched to the quantom dot material in order to supress associated crystalline defects within the material are located away from the center of its bandgap such that they suppress recombination-enhanced defect-reaction-driven degradation of the active optical device. The active optical device is epitaxially grown on a handle substrate of an SOI substrate that has a surface waveguide formed in its device layer, where the active region and the surface waveguide are at the same height above the handle wafer surface.

公开(公告)号：US09733543B2

公开(公告)日：2017-08-15

申请号：US15286275

申请日：2016-10-05

Applicant: The Regents of the University of California

Inventor： Nadir Dagli

IPC: G02F1/225 ,  G02F1/017 ,  G02B6/132 ,  G02B6/125 ,  G02F1/03 ,  G02B6/42 ,  G02F1/01 ,  G02F1/025 ,  G02B6/12 ,  G02F1/21

CPC classification number: G02F1/2255 ,  G02B6/125 ,  G02B6/132 ,  G02B6/42 ,  G02B2006/1204 ,  G02B2006/12047 ,  G02B2006/12054 ,  G02B2006/12078 ,  G02B2006/12128 ,  G02B2006/12142 ,  G02B2006/12159 ,  G02F1/0121 ,  G02F1/01708 ,  G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/12 ,  G02F2202/20 ,  G02F2202/42

Abstract: Electro-optical modulators and methods of fabrication are disclosed. An electro-optical modulator includes a Mach-Zehnder interferometer formed in a substrate removed semiconductor layer and a coplanar waveguide. Signals from the coplanar waveguide are capacitively coupled to the Mach-Zehnder interferometer through first and second dielectric layers.

公开(公告)号：US20160047983A1

公开(公告)日：2016-02-18

申请号：US14824759

申请日：2015-08-12

Applicant: Huawei Technologies Co., Ltd.

Inventor： Tom COLLINS ,  Martijn TASSAERT

IPC: G02B6/122 ,  G02B6/13 ,  G02B6/42 ,  G02B6/12

CPC classification number: G02B6/1228 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/13 ,  G02B6/131 ,  G02B6/4257 ,  G02B2006/12078 ,  G02B2006/12128 ,  G02B2006/12173 ,  G02B2006/12176 ,  G02B2006/12178 ,  H01S3/0637 ,  H01S5/021 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/22 ,  H01S5/2206 ,  H01S5/2207 ,  H01S5/2209

Abstract: A method for producing an integrated optical circuit comprising an active device and a passive waveguide circuit includes: applying an active waveguide structure on a source wafer substrate; exposing a portion of the source wafer substrate by selectively removing the active waveguide structure; applying a passive waveguide structure on the exposed portion of the source wafer substrate, wherein an aggregation of the active waveguide structure and the passive waveguide structure forms the active device, the active device having a bottom surface facing the source wafer substrate; removing the source wafer substrate from the active device; and attaching the active device to a target substrate comprising the passive waveguide circuit such that the bottom surface of the active device faces the target substrate.

Abstract translation: 一种包括有源器件和无源波导电路的集成光电路的制造方法，包括：在源极晶片衬底上施加有源波导结构; 通过选择性地去除有源波导结构来暴露源晶片衬底的一部分; 在所述源晶片衬底的所述暴露部分上施加无源波导结构，其中所述有源波导结构和所述无源波导结构的聚集形成所述有源器件，所述有源器件具有面向所述源晶片衬底的底表面; 从有源器件去除源晶片衬底; 以及将所述有源器件附接到包括所述无源波导电路的目标衬底，使得所述有源器件的底表面面向所述靶衬底。