公开(公告)号：US20120273794A1

公开(公告)日：2012-11-01

申请号：US13407191

申请日：2012-02-28

申请人： Shinji SAITO ,  Shinya Nunoue ,  Rei Hashimoto

发明人： Shinji SAITO ,  Shinya Nunoue ,  Rei Hashimoto

IPC分类号： H01L33/32 ,  H01L33/00 ,  H01L29/06 ,  H01L33/20

CPC分类号： H01L33/24 ,  B82Y20/00 ,  H01S5/0217 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3428 ,  H01S5/34333 ,  H01S5/4037 ,  H01S5/4056 ,  H01S2301/173 ,  H01S2301/176 ,  H01S2304/02 ,  H01S2304/04

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first layer has a first upper surface and a first side surface. The active layer has a first portion covering the first upper surface and having a second upper surface, and a second portion covering the first side surface and having a second side surface. The second layer has a third portion covering the second upper surface, and a fourth portion covering the second side surface. The first and second layers include a nitride semiconductor. The first portion along a stacking direction has a thickness thicker than the second portion along a direction from the first side surface toward the second side surface. The third portion along the stacking direction has a thickness thicker than the fourth portion along the direction.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，有源层和第二半导体层。 第一层具有第一上表面和第一侧面。 有源层具有覆盖第一上表面并具有第二上表面的第一部分和覆盖第一侧表面并具有第二侧表面的第二部分。 第二层具有覆盖第二上表面的第三部分和覆盖第二侧表面的第四部分。 第一层和第二层包括氮化物半导体。 沿着层叠方向的第一部分沿着从第一侧面朝向第二侧面的方向具有比第二部分厚的厚度。 沿堆叠方向的第三部分沿着该方向具有比第四部分厚的厚度。

公开(公告)号：US08039854B2

公开(公告)日：2011-10-18

申请号：US12399273

申请日：2009-03-06

申请人： Stephen D. Hersee ,  Xin Wang ,  Xinyu Sun

发明人： Stephen D. Hersee ,  Xin Wang ,  Xinyu Sun

IPC分类号： H01L29/205 ,  H01L33/00

CPC分类号： H01L29/413 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02642 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/2003 ,  H01L29/775 ,  H01L31/0304 ,  H01L31/035236 ,  H01L31/184 ,  H01L33/18 ,  H01L33/24 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01S5/1042 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/3428 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/816 ,  Y10T428/24612 ,  H01L2924/00

摘要： Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

摘要翻译： 示例性实施例提供包括高质量（即，无缺陷）III-N族纳米线和均匀III-N纳米线阵列的半导体器件及其可制造的可扩展工艺，其中位置，取向，横截面特征，长度和 可以精确地控制每个纳米线的结晶度。 可以使用脉冲生长模式来制造公开的提供约10nm至约1000微米的均匀长度的III-N族纳米线和/或纳米线阵列，其具有恒定的横截面特征，包括约10-1000nm的示例性直径。 此外，可以通过聚结多个GaN纳米线和/或纳米线阵列来形成高质量的GaN衬底结构，以便制造可见的LED和激光器。 此外，核 - 壳纳米线/ MQW活性结构可以通过在每个纳米线的非极性侧壁上的核 - 壳生长形成。

公开(公告)号：US07502401B2

公开(公告)日：2009-03-10

申请号：US11187477

申请日：2005-07-22

申请人： Jeffrey N. Miller ,  Scott W. Corzine ,  David P. Bour

发明人： Jeffrey N. Miller ,  Scott W. Corzine ,  David P. Bour

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18383 ,  H01S5/2203 ,  H01S5/341 ,  H01S5/3428 ,  H01S5/34333 ,  H01S2304/12

摘要： The present invention provides a VCSEL system comprising forming a first mirror, forming a vertical cavity on the first mirror, the vertical cavity including integrated multiple gain regions and forming a transverse p/n junction laterally to the integrated multiple gain regions, wherein forward biasing the transverse p/n junction causes photon emission in the integrated multiple gain regions.

摘要翻译： 本发明提供了一种VCSEL系统，包括形成第一反射镜，在第一反射镜上形成垂直空腔，垂直空腔包括集成的多增益区域，并横向形成横向p / n接合到集成的多增益区域，其中向前偏置 横向p / n结在整合的多增益区域中引起光子发射。

公开(公告)号：US20080036038A1

公开(公告)日：2008-02-14

申请号：US11684264

申请日：2007-03-09

申请人： Stephen HERSEE ,  Xin Wang ,  Xinyu Sun

发明人： Stephen HERSEE ,  Xin Wang ,  Xinyu Sun

IPC分类号： H01L31/0304 ,  H01L21/20

CPC分类号： H01L29/413 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02642 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/2003 ,  H01L29/775 ,  H01L31/0304 ,  H01L31/035236 ,  H01L31/184 ,  H01L33/18 ,  H01L33/24 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01S5/1042 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/3428 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/816 ,  Y10T428/24612 ,  H01L2924/00

摘要： Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

摘要翻译： 示例性实施例提供包括高质量（即，无缺陷）III-N族纳米线和均匀III-N纳米线阵列的半导体器件及其可制造的可扩展工艺，其中位置，取向，横截面特征，长度和 可以精确地控制每个纳米线的结晶度。 可以使用脉冲生长模式来制造公开的提供约10nm至约1000微米的均匀长度的III-N族纳米线和/或纳米线阵列，其具有恒定的横截面特征，包括约10-1000nm的示例性直径。 此外，可以通过聚结多个GaN纳米线和/或纳米线阵列来形成高质量的GaN衬底结构，以便制造可见的LED和激光器。 此外，核 - 壳纳米线/ MQW活性结构可以通过在每个纳米线的非极性侧壁上的核 - 壳生长形成。

公开(公告)号：US20070041419A1

公开(公告)日：2007-02-22

申请号：US11209994

申请日：2005-08-22

申请人： Michael Tan ,  Scott Corzine ,  David Bour

发明人： Michael Tan ,  Scott Corzine ,  David Bour

IPC分类号： H01S3/083

CPC分类号： B82Y20/00 ,  H01S5/0424 ,  H01S5/1071 ,  H01S5/12 ,  H01S5/2077 ,  H01S5/2272 ,  H01S5/34 ,  H01S5/3428 ,  H01S5/34333 ,  H01S2304/12

摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.

摘要翻译： 本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子 多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。

公开(公告)号：US06353624B1

公开(公告)日：2002-03-05

申请号：US09397106

申请日：1999-09-16

申请人： Nikolaos Pelekanos ,  Valentin Ortiz ,  Guido Mula

发明人： Nikolaos Pelekanos ,  Valentin Ortiz ,  Guido Mula

IPC分类号： H01S532

CPC分类号： H01S5/0608 ,  H01S5/0607 ,  H01S5/06206 ,  H01S5/0622 ,  H01S5/3428 ,  H01S5/4043

摘要： Semiconductor laser with a tunable gain spectrum. Said laser comprises an active zone having at least one active quantum well (AQW), which emits a laser radiation during the introduction of carriers into the active zone and at least one collection quantum well (CQW1, CQW2) on either side of the active well, for collecting and confining part of the carriers introduced. Means for distributing carriers in the collection wells are provided for creating a space charge field for modifying, during the emission of radiation and by an electrooptical effect, the gain spectrum of said active well. Application to optical telecommunications.

摘要翻译： 具有可调谐增益谱的半导体激光器。 所述激光器包括具有至少一个有源量子阱（AQW）的有源区，其在将载流子引入活性区域期间发射激光辐射，并且在活性阱两侧的至少一个收集量子阱（CQW1，CQW2） 用于收集和限制引进的部分运营商。 用于在收集井中分配载体的装置用于产生空间电荷场，用于在发射辐射期间和通过电光效应改变所述活性孔的增益谱。 应用于光通信。

公开(公告)号：US5991322A

公开(公告)日：1999-11-23

申请号：US505761

申请日：1995-07-21

申请人： Tohru Takiguchi ,  Katsuhiko Goto ,  Hirotaka Kizuki

发明人： Tohru Takiguchi ,  Katsuhiko Goto ,  Hirotaka Kizuki

IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/20 ,  H01L33/30 ,  H01L33/36 ,  H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/20 ,  H01S5/227 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/0265 ,  H01S5/06256 ,  H01S5/12 ,  H01S5/1231 ,  H01S5/2077 ,  H01S5/2081 ,  H01S5/2086 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/3428 ,  H01S5/34306 ,  H01S5/34313

摘要： A semiconductor optical device includes a first semiconductor layer, and a diffraction grating disposed on the first semiconductor layer. The diffraction grating includes portions of a superlattice layer grown on the first semiconductor layer and including alternatingly arranged second semiconductor layers of a semiconductor material in which mass transport hardly occurs during growth of other semiconductor layers and third semiconductor layers of a semiconductor material different from the material of the second semiconductor layers. The device includes a fourth semiconductor layer burying the diffraction grating. In this structure, since the second semiconductor layers are included in the diffraction grating, the shape of the diffraction grating is maintained during the vapor phase deposition of the fourth semiconductor layer. Therefore, the thickness, amplitude, and pitch of the diffraction grating that determine the optical coupling constant are controlled with high precision.

摘要翻译： 半导体光学器件包括第一半导体层和设置在第一半导体层上的衍射光栅。 衍射光栅包括在第一半导体层上生长的超晶格层的部分，并且包括交替布置的半导体材料的第二半导体层，其中在其它半导体层和不同于材料的半导体材料的第三半导体层的生长期间几乎不发生质量传输 的第二半导体层。 该器件包括埋入衍射光栅的第四半导体层。 在这种结构中，由于第二半导体层包括在衍射光栅中，所以在第四半导体层的气相沉积期间维持衍射光栅的形状。 因此，确定光耦合常数的衍射光栅的厚度，振幅和间距以高精度被控制。

公开(公告)号：US5956358A

公开(公告)日：1999-09-21

申请号：US606314

申请日：1996-02-23

申请人： Yoshihiro Sasaki

发明人： Yoshihiro Sasaki

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/227 ,  H01S5/34 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/0424 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3415 ,  H01S5/3428

摘要： The present invention also provides another semiconductor multilayer carrier injection structure in a semiconductor laser. The semiconductor multilayer carrier injection structure comprises the following elements. The semiconductor multilayer carrier injection structure includes a multiple quantum well active layer comprising alternating laminations of quantum well layers made of a first compound semiconductor having a first energy band gap and potential barrier layers made of a second compound semiconductor having a second energy band gap larger than the first energy band gap. Each of the quantum well layers has an electron ground state of quantum energy levels of electrons and a hole ground state of quantum energy levels of holes. The semiconductor multilayer carrier injection structure also includes a first carrier injection guide layer being provided in contact with a first lateral end portion of the multiple quantum well active layer. The first carrier injection guide layer is made of a third compound semiconductor of a first conductivity type. The third compound semiconductor has a third energy band gap which is larger than a difference between the electron ground state and the hole ground state of the quantum well layers and which is smaller than the second energy band gap of the potential barrier layers. The semiconductor multilayer carrier injection structure also includes a second carrier injection guide layer being provided in contact with a second lateral end portion of the multiple quantum well active layer. The second carrier injection guide layer is made of a fourth compound semiconductor of a second conductivity type. The fourth compound semiconductor has a fourth energy band gap which is larger than the difference between the electron ground state and the hole ground state of the quantum well layers and substantially equal to or smaller than the second energy band gap of the potential barrier layers.

公开(公告)号：US5627383A

公开(公告)日：1997-05-06

申请号：US606509

申请日：1996-02-23

申请人： John E. Cunningham ,  Keith W. Goossen ,  William Y. Jan ,  Michael D. Williams

发明人： John E. Cunningham ,  Keith W. Goossen ,  William Y. Jan ,  Michael D. Williams

IPC分类号： G02F1/015 ,  G02F1/017 ,  H01L27/15 ,  H01L29/06 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/105 ,  H01S5/042 ,  H01S5/183 ,  H01S5/30 ,  H01S5/34 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： B82Y20/00 ,  G02F1/017 ,  H01L31/0352 ,  H01L31/105 ,  H01S5/0421 ,  H01S5/18341 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3428 ,  Y10S977/759

摘要： Optoelectronic devices such as photodetectors, modulators and lasers with improved optical properties are provided with an atomically smooth transition between the buried conductive layer and quantum-well-diode-containing intrinsic region of a p-i-n structure. The buried conductive layer is grown on an underlying substrate utilizing a surfactant-assisted growth technique. The dopant and dopant concentration are selected, as a function of the thickness of the conductive layer to be formed, so that a surface impurity concentration of from 0.1 to 1 monolayer of dopant atoms is provided. The presence of the impurities promotes atomic ordering at the interface between the conductive layer and the intrinsic region, and subsequently results in sharp barriers between the alternating layers comprising the quantum-well-diodes of the intrinsic layer.

摘要翻译： 具有改进的光学性质的诸如光电探测器，调制器和激光器的光电器件在掩埋导电层和含p-i-n结构的量子阱二极管的本征区域之间具有原子平滑的过渡。 使用表面活性剂辅助生长技术将掩埋的导电层生长在下面的衬底上。 选择掺杂剂和掺杂剂浓度作为要形成的导电层的厚度的函数，使得提供0.1至1个单层掺杂剂原子的表面杂质浓度。 杂质的存在促进在导电层和本征区之间的界面处的原子排序，并且随后在包含本征层的量子阱二极管的交替层之间产生尖锐的障碍。

公开(公告)号：US5561679A

公开(公告)日：1996-10-01

申请号：US419472

申请日：1995-04-10

申请人： Lennart Mannik ,  Harry E. Ruda

发明人： Lennart Mannik ,  Harry E. Ruda

IPC分类号： G21H3/02 ,  H01L33/00 ,  H01L33/02 ,  H01S3/09 ,  H01S3/0955 ,  H01S3/0957 ,  H01S5/18 ,  H01S5/183 ,  H01S5/187 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  H01J65/00

CPC分类号： H01L33/025 ,  B82Y20/00 ,  G21H3/02 ,  H01L33/0008 ,  H01S3/09 ,  H01S3/0955 ,  H01S3/0957 ,  H01S5/32 ,  H01S5/18 ,  H01S5/18308 ,  H01S5/187 ,  H01S5/3409 ,  H01S5/3428 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/34333

摘要： A radioluminescent light source comprising a crystalline III-V or II-VI semiconductor or a group IV quantum semiconductor and a radioactive element adapted to cause the semiconductor to produce light is disclosed. The radioactive element, such as tritium, is either incorporated within the semiconductor, preferably proximate to the p-n junction of the semiconductor, or placed adjacent the semiconductor.

摘要翻译： 公开了一种包括晶体III-V或II-VI半导体或IV族量子半导体和适于使半导体产生光的放射性元件的放射性发光光源。 放射性元素，例如氚，或者被并入半导体内，最好靠近半导体的p-n结，或放在与半导体相邻的位置。