公开(公告)号：US20170324220A1

公开(公告)日：2017-11-09

申请号：US15534605

申请日：2014-12-19

Applicant: Alpes Lasers SA

Inventor： Richard MAULINI ,  Alfred BISMUTO ,  Tobias GRESCH ,  Antoine MÜLLER

IPC: H01S5/34 ,  H01S5/227 ,  H01S5/042 ,  H01S5/026 ,  H01S5/022 ,  H01S5/343

CPC classification number: H01S5/3402 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02476 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/34313

Abstract: For epitaxial-side-down bonding of quantum cascade lasers (QCLs), it is important to optimize the heat transfer between the QCL chip and the heat sink to which the chip is mounted. This is achieved by using a heatsink with high thermal conductivity and by minimizing the thermal resistance between the laser active region and said heatsink. In the epi-down configuration concerned, the active region of the QCL is located only a few micrometers away from the heatsink, which is preferable from a thermal standpoint. However, this design is challenging to implement and often results in a low fabrication yield if no special precautions are taken. Since the active region is very close to the heatsink, solder material may ooze out on the sides of the chip during the bonding process and may short-circuits the device, rendering it unusable. To avoid this happening, the invention proposes to provide a trench all around the chip with the exception of the two waveguide facets, i.e. the ends of the active region. This trench may be etched into the otherwise standard QCL chip or otherwise machined into the chip, providing an initially empty space for the volume of solder displaced by the chip during the epi-down bonding process, which empty space is occupied by the surplus solder without contacting the side of the chip and thus short-circuiting the device.

公开(公告)号：US09373939B2

公开(公告)日：2016-06-21

申请号：US14732006

申请日：2015-06-05

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Hiroki Mori ,  Toshiyuki Tanahashi

IPC: H01S5/00 ,  H01S5/227 ,  H01S5/223 ,  H01S5/32 ,  H01S5/12 ,  H01S5/22 ,  H01S5/323 ,  H01S5/34

CPC classification number: H01S5/2275 ,  H01S5/12 ,  H01S5/2201 ,  H01S5/2224 ,  H01S5/223 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/3202 ,  H01S5/3235 ,  H01S5/3401 ,  H01S2304/04

Abstract: A method for manufacturing a semiconductor device comprising the steps of: growing a stacked semiconductor layer on a substrate, the stacked semiconductor layer including an active layer and a cladding layer; forming a mesa structure by etching the stacked semiconductor layer, the mesa structure extending in a [011] direction; and forming a buried layer of Fe-doped InP on the side surface of the mesa structure in a reactor of an organo-metallic vapor phase epitaxy apparatus while supplying a hydrogen chloride gas into the reactor. In the step of forming the buried layer, the hydrogen chloride gas is supplied from the beginning of forming the buried layer. The buried layer has a first region and a second region. The first region has a front surface of a (311)B plane. The second region is formed on the front surface. The Fe concentration of the first region is higher than that of the second region.

Abstract translation: 一种制造半导体器件的方法，包括以下步骤：在衬底上生长堆叠的半导体层，所述层叠半导体层包括有源层和包层; 通过蚀刻堆叠的半导体层形成台面结构，台面结构沿[011]方向延伸; 在有机金属气相外延装置的反应器中，在台面结构的侧面上形成Fe掺杂InP的掩埋层，同时向反应器中供给氯化氢气体。 在形成掩埋层的步骤中，从形成掩埋层的开始开始供给氯化氢气体。 掩埋层具有第一区域和第二区域。 第一区域具有（311）B平面的前表面。 第二区域形成在前表面上。 第一区域的Fe浓度高于第二区域的Fe浓度。

公开(公告)号：US20150357793A1

公开(公告)日：2015-12-10

申请号：US14732006

申请日：2015-06-05

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Hiroki MORI ,  Toshiyuki TANAHASHI

IPC: H01S5/223 ,  H01S5/323

CPC classification number: H01S5/2275 ,  H01S5/12 ,  H01S5/2201 ,  H01S5/2224 ,  H01S5/223 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/3202 ,  H01S5/3235 ,  H01S5/3401 ,  H01S2304/04

Abstract: A method for manufacturing a semiconductor device comprising the steps of: growing a stacked semiconductor layer on a substrate, the stacked semiconductor layer including an active layer and a cladding layer; forming a mesa structure by etching the stacked semiconductor layer, the mesa structure extending in a [011] direction; and forming a buried layer of Fe-doped InP on the side surface of the mesa structure in a reactor of an organo-metallic vapor phase epitaxy apparatus while supplying a hydrogen chloride gas into the reactor. In the step of forming the buried layer, the hydrogen chloride gas is supplied from the beginning of forming the buried layer. The buried layer has a first region and a second region. The first region has a front surface of a (311)B plane. The second region is formed on the front surface. The Fe concentration of the first region is higher than that of the second region.

Abstract translation: 一种制造半导体器件的方法，包括以下步骤：在衬底上生长堆叠的半导体层，所述层叠半导体层包括有源层和包层; 通过蚀刻堆叠的半导体层形成台面结构，台面结构沿[011]方向延伸; 在有机金属气相外延装置的反应器中，在台面结构的侧面上形成Fe掺杂InP的掩埋层，同时向反应器中供给氯化氢气体。 在形成掩埋层的步骤中，从形成掩埋层的开始开始供给氯化氢气体。 掩埋层具有第一区域和第二区域。 第一区域具有（311）B平面的前表面。 第二区域形成在前表面上。 第一区域的Fe浓度高于第二区域的Fe浓度。

公开(公告)号：US20150349496A1

公开(公告)日：2015-12-03

申请号：US14697908

申请日：2015-04-28

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Fumito MIYASAKA

IPC: H01S5/343 ,  H01S5/32

CPC classification number: H01S5/34333 ,  H01S5/02296 ,  H01S5/106 ,  H01S5/164 ,  H01S5/221 ,  H01S5/2272 ,  H01S5/3202 ,  H01S5/32341 ,  H01S5/34 ,  H01S5/34346

Abstract: To provide a semiconductor laser that suppresses end face destruction due to catastrophic optical damage (COD) to a light emission end face and has high output characteristics.An n-type clad layer, a current block layer, an active layer, and a p-type clad layer are provided over an n-type substrate whose major plane has an off-angle in a direction from a (0001) plane. For example, the current block layer is arranged on both sides of a current constriction area. Then, the current block layer is arranged so as to be retracted from a cleavage plane (line). In this case, in the active layer having a quantum well structure that is crystal-grown over the n-type clad layer and the current block layer, the layer thickness of a window area from the cleavage plane (line) up to the end part of the current block layer is smaller than the layer thickness of the current constriction area (area between the current block layers). As a result, the band gap of the active layer in the window area becomes large, and thus it is possible to suppress end face destruction due to the COD.

Abstract translation: 提供半导体激光器，其抑制由于对发光端面的灾难性光学损伤（COD）造成的端面破坏并具有高输出特性。 在n型衬底上设置n型覆盖层，电流阻挡层，有源层和p型覆盖层，该n型衬底的主面在（1-100）方向上具有偏离角 0001）面。 例如，当前阻挡层布置在电流收缩区域的两侧。 然后，将当前的阻挡层布置成从解理面（线）缩回。 在这种情况下，在具有在n型覆盖层和当前阻挡层上晶体生长的量子阱结构的有源层中，从解理面（线）到端部的窗口区域的层厚度 当前阻挡层的厚度小于电流收缩区域（当前阻挡层之间的面积）的层厚度。 结果，窗口区域中的活性层的带隙变大，因此可以抑制由于COD引起的端面破坏。

公开(公告)号：US07903713B2

公开(公告)日：2011-03-08

申请号：US12398498

申请日：2009-03-05

Applicant: Sachio Karino

Inventor： Sachio Karino

IPC: H01S3/097 ,  H01S5/00

CPC classification number: H01S5/4031 ,  H01S5/0014 ,  H01S5/0425 ,  H01S5/2086 ,  H01S5/2201 ,  H01S5/2213 ,  H01S5/227 ,  H01S5/2272 ,  H01S2301/14

Abstract: An edge-emitting multi-beam semiconductor laser includes juxtaposed stripe-shaped light-emitting portions the number of which is N (wherein N≧2), wherein a separation groove that electrically separates the light-emitting portions from each other is provided between the light-emitting portions, a first recess that is partly discontinuous is provided outside a first light-emitting portion, a second recess that is partly discontinuous is provided outside an Nth light-emitting portion.

Abstract translation: 边缘发射多光束半导体激光器包括数量为N的并置条形发光部分（其中N≥2），其中在发光部分之间彼此电分离的分离槽设置在 发光部分，部分不连续的第一凹部设置在第一发光部分的外侧，部分不连续的第二凹部设置在第N发光部分的外侧。

公开(公告)号：US07586967B2

公开(公告)日：2009-09-08

申请号：US10580683

申请日：2004-11-26

Applicant: Ryuji Kobayashi

Inventor： Ryuji Kobayashi

IPC: H01S5/00

CPC classification number: H01S5/227 ,  H01S5/2222 ,  H01S5/2272 ,  H01S2304/04

Abstract: A semiconductor laser manufactured by selective MOVPE growth, in which the lattice relaxation of recombination layers grown on large width portions is suppressed, the leak current is suppressed, and the reliability is high. When a semiconductor layer is manufactured by selective MOVPE growth, a DH mesastripe (6) is epitaxially grown on a small width portion (14) which is a spacing of a silicon oxide mask (13). The average strain of the DH mesa stripe (6) is shifted to the compression strain side to an extent that lattice relaxation is not caused. As a result, the tensile strains of recombination layers (16) grown on large width portions (15) are mitigated.

Abstract translation: 通过选择性MOVPE生长制造的半导体激光器，其中抑制了在大宽度部分上生长的复合层的晶格弛豫，泄漏电流被抑制，并且可靠性高。 当通过选择性MOVPE生长制造半导体层时，在作为氧化硅掩模（13）的间隔的小宽度部分（14）上外延生长DH导管（6）。 DH台面条纹（6）的平均应变向压缩应变侧移动到没有引起晶格弛豫的程度。 结果，减轻了在大宽度部分（15）上生长的复合层（16）的拉伸应变。

公开(公告)号：US07502405B2

公开(公告)日：2009-03-10

申请号：US11209994

申请日：2005-08-22

Applicant: Michael R. T. Tan ,  Scott W. Corzine ,  David P. Bour

Inventor： Michael R. T. Tan ,  Scott W. Corzine ,  David P. Bour

IPC: H01S3/083 ,  H01S5/00 ,  H01L21/00

CPC classification number: B82Y20/00 ,  H01S5/0424 ,  H01S5/1071 ,  H01S5/12 ,  H01S5/2077 ,  H01S5/2272 ,  H01S5/34 ,  H01S5/3428 ,  H01S5/34333 ,  H01S2304/12

Abstract: The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.

Abstract translation: 本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子 多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。

公开(公告)号：US20080070336A1

公开(公告)日：2008-03-20

申请号：US11937921

申请日：2007-11-09

Applicant: Akitaka KIMURA

Inventor： Akitaka KIMURA

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/145 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/32341 ,  Y10T428/24273

Abstract: In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.

Abstract translation: 在通过选择性沉积形成电流窄化结构和限制水平方向的光与衬底平行的结构的氮化物基半导体激光器的制造方法中，当氮化物基半导体通过 金属有机化学气相沉积，防止用作选择性沉积掩模的氧化硅膜分解产生的硅沉积在再生长边界上。 为此，使用氮化硅膜作为用于选择性沉积的掩模，并且当通过金属有机化学气相沉积选择性地沉积氮化物基半导体时，氮化物基半导体的V族材料，即， 提供氮材料，例如氨，以防止用作选择性沉积掩模的氮化硅膜的分解。

公开(公告)号：US20070172169A1

公开(公告)日：2007-07-26

申请号：US11693680

申请日：2007-03-29

Applicant: Fred Kish ,  Charles Joyner ,  David Welch ,  Robert Taylor ,  Alan Nilsson

Inventor： Fred Kish ,  Charles Joyner ,  David Welch ,  Robert Taylor ,  Alan Nilsson

IPC: G02B6/12 ,  G02B6/34

CPC classification number: G02B6/12033 ,  B82Y20/00 ,  G02B6/02204 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/12019 ,  G02B6/12023 ,  G02B6/12026 ,  G02B6/12028 ,  G02B6/124 ,  G02F1/01725 ,  G02F2001/0175 ,  G02F2001/01758 ,  H01S5/0085 ,  H01S5/024 ,  H01S5/02415 ,  H01S5/02453 ,  H01S5/02461 ,  H01S5/02476 ,  H01S5/026 ,  H01S5/0261 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/0683 ,  H01S5/0687 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/3408 ,  H01S5/34306 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50 ,  H04B10/2914 ,  H04B10/50 ,  H04B10/506 ,  H04B10/572 ,  H04J14/02

Abstract: An optical transmitter comprises a monolithic transmitter photonic integrated circuit (TxPIC) chip that includes an array of modulated sources formed on the PIC chip and having different operating wavelengths approximating a standardized wavelength grid and providing signal outputs of different wavelengths. A wavelength selective combiner is formed on the PIC chip having a wavelength grid passband response approximating the wavelength grid of the standardized wavelength grid. The signal outputs of the modulated sources optically coupled to inputs of the wavelength selective combiner to produce a combined signal output from the combiner. A first wavelength tuning element coupled to each of the modulated sources and a second wavelength tuning element coupled to the wavelength selective combiner. A wavelength monitoring unit is coupled to the wavelength selective combiner to sample the combined signal output. A wavelength control system coupled to the first and second wavelength tuning elements and to said wavelength monitoring unit to receive the sampled combined signal output. The wavelength control system adjusts the respective wavelengths of operation of the modulated sources to approximate or to be chirped to the standardized wavelength grid and for adjusting the optical combiner wavelength grid passband response to approximate the standardized wavelength grid.

Abstract translation: 光发射机包括单片发射机光子集成电路（TxPIC）芯片，其包括形成在PIC芯片上的调制源的阵列，并且具有接近标准化波长网格并提供不同波长的信号输出的不同工作波长。 在具有近似于标准化波长网格的波长网格的波长网格通带响应的PIC芯片上形成波长选择性组合器。 调制源的信号输出光耦合到波长选择组合器的输入，以产生从组合器输出的组合信号。 耦合到每个调制源的第一波长调谐元件和耦合到波长选择组合器的第二波长调谐元件。 波长监测单元耦合到波长选择组合器以对组合的信号输出进行采样。 波长控制系统耦合到第一和第二波长调谐元件以及所述波长监视单元以接收采样的组合信号输出。 波长控制系统调整调制源的各个波长的波长近似于或被啁啾到标准化波长网格，并且用于调整光合并波长网格通带响应以近似标准化的波长网格。

公开(公告)号：US20060159133A1

公开(公告)日：2006-07-20

申请号：US11192891

申请日：2005-07-29

Applicant: Sun-Lyeong Hwang ,  Byeong-Hoon Park

Inventor： Sun-Lyeong Hwang ,  Byeong-Hoon Park

IPC: H01S3/098 ,  H01L21/00 ,  H01S5/00

CPC classification number: H01S5/227 ,  H01S5/1014 ,  H01S5/2272 ,  H01S5/2275 ,  H01S2301/18

Abstract: A method for manufacturing a semiconductor laser is provided. The method includes the steps of sequentially growing a lower clad, a lower waveguide and a multi-quantum well on a semiconductor substrate; forming, on the multi-quantum well, masks each possessing a first area which has a constant width and a second area which extends from the first area and has a gradually decreasing width, such that the masks are symmetrical to each other; sequentially growing an upper waveguide and an upper clad on the multi-quantum well through selective area growth; implementing a mesa-etching process from the upper clad to the lower clad; and growing, on the semiconductor substrate, a current blocking layer to have the same height as the upper clad.

Abstract translation: 提供一种制造半导体激光器的方法。 该方法包括在半导体衬底上顺序生长下包层，下波导和多量子阱的步骤; 在所述多量子阱上形成具有第一区域的掩模，所述掩模具有从所述第一区域延伸的具有恒定宽度的第一区域和具有逐渐减小的宽度的第二区域，使得所述掩模彼此对称; 通过选择性区域生长顺序地生长多量子阱上的上波导和上包层; 实现从上包层到下包层的台面蚀刻工艺; 并且在半导体衬底上生长具有与上部包层相同的高度的电流阻挡层。