Invention Grant
- Patent Title: Multi-beam semiconductor laser
- Patent Title (中): 多光束半导体激光器
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Application No.: US12398498Application Date: 2009-03-05
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Publication No.: US07903713B2Publication Date: 2011-03-08
- Inventor: Sachio Karino
- Applicant: Sachio Karino
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2008-082709 20080327
- Main IPC: H01S3/097
- IPC: H01S3/097 ; H01S5/00

Abstract:
An edge-emitting multi-beam semiconductor laser includes juxtaposed stripe-shaped light-emitting portions the number of which is N (wherein N≧2), wherein a separation groove that electrically separates the light-emitting portions from each other is provided between the light-emitting portions, a first recess that is partly discontinuous is provided outside a first light-emitting portion, a second recess that is partly discontinuous is provided outside an Nth light-emitting portion.
Public/Granted literature
- US20090245313A1 MULTI-BEAM SEMICONDUCTOR LASER Public/Granted day:2009-10-01
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