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公开(公告)号：US08315526B2
公开(公告)日：2012-11-20
申请号：US11820299
申请日：2007-06-18
IPC分类号： H04B10/00
CPC分类号： H04B10/803
摘要： In accordance with an aspect of the invention, a system has a transmitter and a receiver, where the transmitter includes a beam source and an optical element. The beam source produces a beam that represents information, and the optical element alters the beam so that the beam has a uniform intensity over a cross-sectional area. The receiver is separated from the transmitter by free space through which the beam propagates and includes an active area positioned to receive a portion of the beam that the receiver converts into a received signal. To accommodate possible misalignment, the cross-sectional area of the beam is larger than the active area by an amount that accommodates a range of misalignment of the receiver with the transmitter.
摘要翻译： 根据本发明的一个方面，系统具有发射器和接收器，其中发射器包括光束源和光学元件。 光束源产生表示信息的光束，并且光学元件改变光束，使得光束在横截面积上具有均匀的强度。 接收机通过自由空间与发射机分离，射束通过该空间传播，并且包括被定位为接收接收机转换成接收信号的波束的一部分的有源区域。 为了适应可能的未对准，波束的横截面面积大于有效区域，其量适应接收器与发射器的不对准范围。
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2.发明授权Active region of a light emitting device optimized for increased modulation speed operation 有权针对增加的调制速度操作优化的发光器件的有源区域公开(公告)号：US07577172B2
公开(公告)日：2009-08-18
申请号：US11143374
申请日：2005-06-01
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3407
摘要： In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.
摘要翻译： 根据本发明，获得了用于发光器件的增加的最大调制速度和改善的孔分布。 用于发光器件的量子阱结构的阻挡层形成具有变化的势垒能量高度。 在阻挡层之间形成量子阱结构的量子阱层。
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3.发明申请Semiconductor System Having a Ring Laser Fabricated by Epitaxial Layer Overgrowth 失效具有由外延层过度生长制成的环形激光器的半导体系统公开(公告)号：US20090129426A1
公开(公告)日：2009-05-21
申请号：US12359326
申请日：2009-01-25
IPC分类号： H01S3/083
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/1071 , H01S5/12 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
摘要翻译： 本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子 多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。
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公开(公告)号：US07215848B2
公开(公告)日：2007-05-08
申请号：US10768858
申请日：2004-01-29
IPC分类号： G02B6/26
CPC分类号： G02B6/29335 , G02B6/12007 , G02B6/2746 , G02B2006/12097 , G02B2006/12104 , G02F1/0955 , G02F2203/15
摘要： An optical isolator for coupling light from a first waveguide to a second waveguide is disclosed. The optical isolator utilizes a resonator coupled to the first and second optical waveguides. The resonator has a resonance at λ for light traveling from the first optical waveguide to the second optical waveguide; however, the resonator does not have a resonance at λ for light traveling from the second waveguide to the first waveguide. The resonator can use a layer of ferromagnetic material in an applied magnetic field. The magnetic field within the ferromagnetic material varies in strength and/or direction over the layer of ferromagnetic material. The magnetic field can be generated by an external magnetic field that varies over the layer of ferromagnetic material. Alternatively, the resonator can include a layer of ferromagnetic metal that overlies a portion of the layer of ferromagnetic material and a constant external magnetic field.
摘要翻译： 公开了一种用于将来自第一波导的光耦合到第二波导的光隔离器。 光隔离器利用耦合到第一和第二光波导的谐振器。 谐振器对于从第一光波导到第二光波导的光的λ具有谐振; 然而，对于从第二波导传播到第一波导的光，谐振器在λ处不具有谐振。 谐振器可以在施加的磁场中使用铁磁材料层。 铁磁材料内的磁场在铁磁材料层上的强度和/或方向上变化。 磁场可以由在铁磁材料层上变化的外部磁场产生。 或者，谐振器可以包括铁磁金属层，其覆盖铁磁材料层的一部分和恒定的外部磁场。
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公开(公告)号：US07034331B2
公开(公告)日：2006-04-25
申请号：US10861144
申请日：2004-06-04
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18313 , H01S5/3095 , H01S5/32366 , H01S5/34306 , Y10S257/918
摘要： The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.
摘要翻译： 隧道结结构包括第一半导体材料的p型隧道结层，第二半导体材料的n型隧道结层和隧道结层之间的隧道结。 至少一种半导体材料包括镓（Ga），砷（As）和氮（N）或锑（Sb）。 通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。
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6.发明授权Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region 失效制造长波长砷化铟镓（InGaAsN）活性区域的方法公开(公告)号：US07033938B2
公开(公告)日：2006-04-25
申请号：US10785747
申请日：2004-02-23
申请人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott W. Corzine
发明人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott W. Corzine
IPC分类号： H01L21/44
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L33/007 , H01L33/105 , H01S5/32366 , Y10S438/936 , Y10S438/938 , Y10S438/956
摘要： The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III–V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 μm is deposited over the substrate wafer.
摘要翻译： 通过提供有机金属气相外延（OMVPE）反应器，将能够支持砷化镓镓氮化物的生长的衬底晶片放置在反应器中，提供III-V族前体混合物，制造长波长发光器件的有源区 包括砷前体，氮前体，镓前体，铟前体和载气，并将反应器加压至不高于砷化镓砷化物层的亚大气压升高的生长压力 在基片晶片上沉积与长于1.2μm波长的发光相当的氮气分数。
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7.发明授权Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells 有权具有用于增加量子阱的有效载流子捕获截面的元件的发光器件公开(公告)号：US06878970B2
公开(公告)日：2005-04-12
申请号：US10418408
申请日：2003-04-17
申请人： David P. Bour , Michael H. Leary , Ying-Lan Chang , Yoon-Kyu Song , Michael R. T. Tan , Tetsuya Takeuchi , Danielle Chamberlin
发明人： David P. Bour , Michael H. Leary , Ying-Lan Chang , Yoon-Kyu Song , Michael R. T. Tan , Tetsuya Takeuchi , Danielle Chamberlin
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/105
摘要： Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.
摘要翻译： 描述发光器件。 发光器件的一个示例包括第一阻挡层和第二阻挡层，以及位于第一和第二阻挡层之间的量子阱层。 第一和第二阻挡层由砷化镓构成，量子阱层由氮化铟镓组成。 第一层位于量子阱层和第一阻挡层之间。 第一层在第一阻挡层和量子阱层的能隙之间具有带隙能。 发光器件的另一示例包括量子阱和邻近量子阱的载流子俘获元件。 载体捕获元素增加量子阱的有效载流子俘获截面。
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8.发明授权Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region 有权用于制造长波长砷化镓镓（InGaAsN）活性区的方法公开(公告)号：US06756325B2
公开(公告)日：2004-06-29
申请号：US10140625
申请日：2002-05-07
申请人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott Corzine
发明人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott Corzine
IPC分类号： H01L2100
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L33/007 , H01L33/105 , H01S5/32366 , Y10S438/936 , Y10S438/938 , Y10S438/956
摘要： Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium gallium arsenide nitride (InGaAsN) film, supplying to the reactor a group-III-V precursor mixture comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 1.2 um is extracted from the dimethylhydrazine and deposited on the substrate.
摘要翻译： 公开了用于制造用于长波长发光器件的有源区的几种方法。 在一个实施方案中，该方法包括将衬底放置在有机金属气相外延（OMVPE）反应器中，该衬底用于支持砷化铟镓氮化物（InGaAsN）膜的生长，向反应器供应III-V族前体混合物，其包含 胂，二甲基肼，烷基镓，烷基铟和载气，其中胂和二甲基肼是Ⅴ族前体材料，其中二甲基肼的百分比基本上超过胂的百分比，并将反应器加压至 其中与二氧化肼的二氧化氮中提取出长于1.2μm的波长的发光相当的氮浓度并沉积在基板上。
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公开(公告)号：US06252896B1
公开(公告)日：2001-06-26
申请号：US09263696
申请日：1999-03-05
申请人： Michael R. T. Tan , Dubravko I. Babic , Scott W. Corzine , Tirmula R. Ranganath , Shih-Yuan Wang , Wayne Bi
发明人： Michael R. T. Tan , Dubravko I. Babic , Scott W. Corzine , Tirmula R. Ranganath , Shih-Yuan Wang , Wayne Bi
IPC分类号： H01S500
CPC分类号： H01S5/426 , H01S5/0215 , H01S5/0216 , H01S5/041 , H01S5/18311 , H01S5/18369
摘要： An optically pumped vertical-cavity surface-emitting laser (VCSEL) device and a method of fabricating the device utilize two separate substrates that perform a filtering operation to selectively transmit only light having a long peak wavelength that is generated by the device. The optically pumped VCSEL device is a self-pumped device that can generate the pump light to drive the device to emit output laser light having a long peak wavelength. The optically pumped VCSEL device includes a short-wavelength VCSEL formed on one of the two substrates and a long-wavelength VCSEL formed on the other substrate. The short-wavelength VCSEL is a current-driven VCSEL that generates short-wavelength light to drive (i.e., optically pump) the long-wavelength VCSEL. The short-wavelength VCSEL and the long-wavelength VCSEL are bonded together such that the two substrates are separated by the two VCSELs. A transparent optical adhesive material or a metallic bonding material may be utilized to bond the short-wavelength VCSEL onto the long-wavelength VCSEL. The substrates are wavelength-selective with respect to propagating light, so that short-wavelength light generated by the short-wavelength VCSEL and not absorbed by the long-wavelength VCSEL is mostly absorbed by the two separate substrates. However, the long-wavelength light generated by the long-wavelength VCSEL is allowed to be transmitted through the substrates as output laser light.
摘要翻译： 光泵浦垂直腔表面发射激光器（VCSEL）器件和制造该器件的方法利用执行滤波操作的两个分离的衬底，以仅选择性地仅透射由器件产生的具有长峰值波长的光。 光泵浦VCSEL器件是自泵浦器件，其可以产生泵浦光以驱动器件发射具有长峰值波长的输出激光。 光泵浦VCSEL器件包括形成在两个衬底中的一个上的短波长VCSEL和在另一衬底上形成的长波长VCSEL。 短波长VCSEL是产生短波长光以驱动（即光泵浦）长波长VCSEL的电流驱动VCSEL。 短波长VCSEL和长波长VCSEL被结合在一起，使得两个基板被两个VCSEL隔开。 可以使用透明光学粘合剂材料或金属粘合材料将短波长VCSEL粘合到长波长VCSEL上。 衬底相对于传播光是波长选择性的，使得由短波长VCSEL产生并且不被长波长VCSEL吸收的短波长光主要被两个分离的衬底吸收。 然而，由长波长VCSEL产生的长波长光被允许通过基板作为输出激光传输。
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10.发明授权
公开(公告)号：US5838708A
公开(公告)日：1998-11-17
申请号：US509886
申请日：1995-08-01
申请人： Hong Lin , Long Yang , Michael R. T. Tan , Shih-Yuan Wang
发明人： Hong Lin , Long Yang , Michael R. T. Tan , Shih-Yuan Wang
CPC分类号： H01S5/0264 , H01S5/0207 , H01S5/18305 , H01S5/18308 , H01S5/2027 , H01S5/2063
摘要： The present invention provides a structure and method for integrating a photodiode and surface emitting laser on a substrate which minimizes both process complexity and exposure of epitaxial layers. In a first embodiment, a photodiode structure is integrated with the surface emitting laser simply by adding a separate Schottky contact to the surface of the SEL. In a second embodiment, a photodiode structure is integrated with the surface emitting laser by positioning a current isolation region between the photodiode and the SEL. The current isolation region should extend into a first mirror region but not into the light generation region of the active region so that the light generation region of the SEL is optically coupled to the light absorption region of the photodiode.
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