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    VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD OF PRODUCING SAME
    1.
    发明公开
    VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD OF PRODUCING SAME 审中-公开

    公开(公告)号：US20240364081A1

    公开(公告)日：2024-10-31

    申请号：US18770721

    申请日：2024-07-12

    申请人： TRUMPF Photonic Components GmbH

    发明人： Sven Bader ,  Ulrich Weichmann

    IPC分类号： H01S5/183 ,  H01S5/026 ,  H01S5/042 ,  H01S5/227

    CPC分类号： H01S5/18311 ,  H01S5/0262 ,  H01S5/0421 ,  H01S5/18344 ,  H01S5/18377 ,  H01S5/2275

    摘要： A method of producing a Vertical Cavity Surface Emitting Laser, including providing a layer stack of semiconductor layers including a first mirror, a second mirror, an active region between the first and second mirrors, an Al1-xGaxAs layer with 0≤x≤0.05, and a contact layer immediately adjacent to the Al1-xGaxAs layer. The method further includes etching the layer stack to obtain a first layer sub-stack forming a mesa and a second layer sub-stack adjacent to the mesa in a stacking direction of the layer stack. Layers of the second layer sub-stack extend beyond layers of the first layer sub-stack in a direction perpendicular to the stacking direction. The Al1-xGaxAs layer is used as an etch-stop layer. The method further includes removing an outer part of the Al1-xGaxAs layer to expose, at least partly, the contact layer, and oxidizing the Al1-xGaxAs layer to obtain an oxide aperture layer.

    Vertical cavity surface emitting laser device and manufacturing method thereof
    3.
    发明授权
    Vertical cavity surface emitting laser device and manufacturing method thereof 有权

    公开(公告)号：US12126136B2

    公开(公告)日：2024-10-22

    申请号：US17558614

    申请日：2021-12-22

    申请人： ABOCOM SYSTEMS, INC.

    发明人： Cheng-Yi Ou ,  Chih-Yuan Lin ,  Te-Lieh Pan ,  Cheng-Hsiao Chi

    IPC分类号： H01S5/183 ,  H01S5/34 ,  H01S5/343

    CPC分类号： H01S5/18361 ,  H01S5/18311 ,  H01S5/3416 ,  H01S5/343

    摘要： A vertical cavity surface emitting laser (VCSEL) device includes a substrate, a first mirror layer, a tunnel junction layer, a second mirror layer, an active layer, an oxide layer and a third mirror layer sequentially stacked with one another. The first mirror layer and the third mirror layer are N-type distributed Bragg reflectors (N-DBR), and the second mirror layer is P-type distributed Bragg reflector (P-DBR). The tunnel junction layer is provided for the VCSEL device to convert a part of the P-DBR into N-DBR to reduce the series resistance of the VCSEL device, and the tunnel junction layer is not used as current-limiting apertures. This disclosure further discloses a VCSEL device manufacturing method with the in-situ and one-time epitaxy features to avoid the risk of process variation caused by moving the device into and out from an epitaxial cavity.

    Vertical Cavity Surface-Emitting Laser with Independent Definition of Current and Light Confinement
    7.
    发明公开
    Vertical Cavity Surface-Emitting Laser with Independent Definition of Current and Light Confinement 审中-公开

    公开(公告)号：US20240339814A1

    公开(公告)日：2024-10-10

    申请号：US18131571

    申请日：2023-04-06

    申请人： II-VI Delaware, Inc.

    发明人： Stefano Tirelli ,  Eimantas Duda ,  Antoine Pissis ,  Evgeny Zibik ,  Wolfgang Kaiser

    IPC分类号： H01S5/183

    CPC分类号： H01S5/1833 ,  H01S5/18311

    摘要： A Vertical Cavity Surface-Emitting Laser has a body including a vertical stack of semiconductor layers one on top of the other including a current confinement layer having an area of low resistance to current flow defined by an area of high resistance to current flow, whereupon vertical current flow in the stack of semiconductor layers is directed by the area of high resistance to current flow of the current confinement layer through the area of low resistance to current flow of the current confinement layer. A separate light confinement layer is disposed below or above the current confinement layer. The light confinement layer includes one or more protrusions or recesses disposed below or above the area of low resistance to current flow of the current confinement layer.

    Vertical cavity surface emitting laser with integrated photodiode
    9.
    发明授权
    Vertical cavity surface emitting laser with integrated photodiode 有权

    公开(公告)号：US12107388B2

    公开(公告)日：2024-10-01

    申请号：US17334836

    申请日：2021-05-31

    申请人： TRUMPF Photonic Components GmbH

    发明人： Ulrich Weichmann

    IPC分类号： H01S5/183 ,  H01S5/026

    CPC分类号： H01S5/0262 ,  H01S5/18361

    摘要： A vertical cavity surface emitting laser (VCSEL) emits laser light. The VCSEL has an optical resonator and a photodiode. The optical resonator has: a first mirror, an active region configured to generate laser light, and a second mirror. The active region is arranged between the first mirror and the second mirror. The photodiode is integrated in the optical resonator. The photodiode has: an absorption region having a plurality of absorbing layers configured to absorb the generated laser light. The absorbing layers are arranged spaced apart from one another by a distance d which satisfies the condition: d=(2k−1)λ/(4 m). Where λ is the wavelength of the laser light in the absorption region, and k and m are natural numbers ≥1.