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173 条记录 (耗时 0.024 秒)

    Vertical-cavity surface-emitting laser
    1.
    发明授权
    Vertical-cavity surface-emitting laser 有权

    公开(公告)号：US12095230B2

    公开(公告)日：2024-09-17

    申请号：US17611548

    申请日：2020-05-14

    申请人： Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

    发明人： Dieter Bimberg ,  Gunter Larisch

    IPC分类号： H01S5/183 ,  H01S5/20

    CPC分类号： H01S5/18344 ,  H01S5/209

    摘要： An exemplary embodiment of the present invention relates to a method of fabricating at least one radiation emitter comprising the steps of depositing an etch stop layer on a top side of a substrate; depositing a layer stack on the etch stop layer, said layer stack comprising a first contact layer, a first reflector, an active region, a second reflector, and a second contact layer; locally removing the layer stack and the etch stop layer, and thereby forming at least one mesa, said at least one mesa comprising an unremoved section of the etch stop layer and a layered pillar which forms a vertical cavity laser structure based on the unremoved layer stack inside the at least one mesa; depositing a protection material on the top side of the substrate and thereby embedding the entire mesa in the protection material wherein the backside of the substrate remains unprotected; removing the substrate by applying at least one etching chemical that is capable of etching the substrate but incapable or less capable of etching the etch stop layer and the protection material; and removing the etch stop layer and thereby exposing the first contact layer of the at least one layered pillar.

    OPTOELECTRONIC DEVICE WITH VCSEL PROVIDING A GRID PATTERN
    2.
    发明公开
    OPTOELECTRONIC DEVICE WITH VCSEL PROVIDING A GRID PATTERN 审中-公开

    公开(公告)号：US20240088625A1

    公开(公告)日：2024-03-14

    申请号：US18207864

    申请日：2023-06-09

    申请人： Bandwidth10, LTD.

    发明人： Carlos Fernando Rondina Mateus ,  Christopher Chase ,  Michael C. Y. Huang ,  Murat Serbay ,  Stefano Prandoni ,  Philip Worland

    IPC分类号： H01S5/183 ,  H01S5/34 ,  H01S5/343

    CPC分类号： H01S5/18302 ,  H01S5/18344 ,  H01S5/18386 ,  H01S5/3416 ,  H01S5/34306

    摘要： An optoelectronic apparatus includes a tunable VCSEL laser with one or more active regions having quantum wells and barriers. The active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure. One or more tunnel junctions (TJ) are provided. One or more apertures are provided with the selected shape structure. One or more buried tunnel junctions (BTJ) or oxide confine the apertures, additional TJ's, planar structures and or additional BTJ's 28 created during a regrowth process that is independent of a first growth process. A VCSEL output is determined in response to an application of the VCSEL laser. The VCSEL laser includes an HCG grating and a bottom DBR. A user monitoring device that includes the VCSEL. A cylindrical lens has a cylinder axis. An optical element (DOE) projects the light emitted by the elements to generate a pattern of stripes corresponding to the columns of the grid pattern.

    OPTICAL SEMICONDUCTOR DEVICE
    4.
    发明公开
    OPTICAL SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230327405A1

    公开(公告)日：2023-10-12

    申请号：US18044193

    申请日：2020-11-06

    申请人： Mitsubishi Electric Corporation

    发明人： Ryoko SUZUKI ,  Keisuke MATSUMOTO ,  Naoki NAKAMURA ,  Ryosuke MIYAGOSHI

    IPC分类号： H01S5/223 ,  H01S5/183 ,  H01S5/024 ,  H01S5/32

    CPC分类号： H01S5/2232 ,  H01S5/3213 ,  H01S5/02469 ,  H01S5/18344

    摘要： An optical semiconductor device of the present disclosure comprises: a ridge structure formed on a first-conductivity-type semiconductor substrate; a buried layer buried on both side surfaces of the ridge structure; a second-conductivity-type second cladding layer and a second-conductivity-type contact layer laminated on the top of the ridge structure and the surface of the buried layer; a stripe-shaped mesa structure formed of a mesa reaching from the second-conductivity-type contact layer to the first-conductivity-type semiconductor substrate; a heat dissipation layer formed on the surface of the second-conductivity-type contact layer; a mesa protective film covering both side surfaces of the mesa structure and both end portions of the surface of the second-conductivity-type contact layer; and a second-conductivity-type-side electrode electrically connected to the second-conductivity-type contact layer.

    Semiconductor optical amplifier
    5.
    发明授权
    Semiconductor optical amplifier 有权

    公开(公告)号：US11658464B2

    公开(公告)日：2023-05-23

    申请号：US16535031

    申请日：2019-08-07

    申请人： FUJIFILM Business Innovation Corp.

    发明人： Junichiro Hayakawa ,  Daiki Tominaga ,  Akemi Murakami

    IPC分类号： H01S5/10 ,  H01S5/183 ,  H01S5/026 ,  H01S5/343 ,  H01S5/50 ,  H01S5/125

    CPC分类号： H01S5/18311 ,  H01S5/026 ,  H01S5/1003 ,  H01S5/125 ,  H01S5/18344 ,  H01S5/34353 ,  H01S5/50

    摘要： A semiconductor optical amplifier includes a conductive region that is provided on a substrate and allows light transmission, and a nonconductive region that is provided around the conductive region and prohibits light transmission. The conductive region includes a first region including a light-coupling portion to which light from an external light-source unit is coupled, and a second region having a narrower width than the first region and connected to the first region through a connecting portion, the second region including a light-amplifying portion amplifying the light from the light-coupling portion by propagating the light in a predetermined propagating direction along a surface of the substrate, the light-amplifying portion outputting the amplified light in a direction intersecting the surface of the substrate. Seen in a direction perpendicular to the surface of the substrate, the semiconductor optical amplifier includes a portion where a width of the conductive region is continuously reduced from the first region to the second region.

    Structure of VCSEL and method for manufacturing the same
    8.
    发明授权
    Structure of VCSEL and method for manufacturing the same 有权

    公开(公告)号：US09929536B1

    公开(公告)日：2018-03-27

    申请号：US15624489

    申请日：2017-06-15

    申请人： TrueLight Corporation

    发明人： Bing-Cheng Lin ,  Chih Cheng Chen ,  Hung-Wei Tseng

    IPC分类号： H01S5/183 ,  H01S5/187 ,  H01S5/22 ,  H01S5/042

    CPC分类号： H01S5/18344 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/2063

    摘要： A vertical-cavity surface-emitting Laser (VCSEL) has a three-trench structure. By forming a first trench within a mesa around the periphery of an output window of the VCSEL, the overall capacitance is decreased and the time used in the oxidation process for an oxidation layer is shortened. By forming a second trench and a third trench on the periphery of the mesa in a step-like concave manner, the mesa becomes a step-like structure having double mesa-layers. Such that, a larger heat-radiating area can be obtained for decreasing thermal effects, while the metal-gap defects of the metal layer can also be avoided. The implant layer is formed around the periphery of the output window for controlling the optical mode and confining the current path. In addition, an output layer is formed on the output window for controlling the output light.