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    SEMICONDUCTOR OPTICAL DEVICE
    1.
    发明公开
    SEMICONDUCTOR OPTICAL DEVICE 审中-公开

    公开(公告)号：US20240322527A1

    公开(公告)日：2024-09-26

    申请号：US18336806

    申请日：2023-06-16

    申请人： Lumentum Japan, Inc.

    发明人： Tetsuyoshi TAKAMURE ,  Ryu WASHINO ,  Yoshihiro KOJIMA ,  Saori HIZUME

    IPC分类号： H01S5/22 ,  H01S5/042 ,  H01S5/227

    CPC分类号： H01S5/2205 ,  H01S5/0425 ,  H01S5/227 ,  H01S5/0265

    摘要： A semiconductor optical device includes: a mesa-stripe structure extending in a first direction; a pair of buried layers, each buried layer including a first slope surface adjacent to a top surface of the mesa-stripe structure, each buried layer including a first upright surface that stands straight from an upper end of the first slope surface, each buried layer including an upper surface higher than the top surface; an insulating film on the upper surface; and an electrode film over the top surface, the first slope surface, and the insulating film. The first upright surface has an upper end. The upper surface of at least one of the pair of buried layers has recesses. Each recess has a second slope surface that slopes downward from the upper surface. The second slope surface has an upper end that extends along a second direction perpendicular to the first direction.

    OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
    2.
    发明公开
    OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME 审中-公开

    公开(公告)号：US20240128724A1

    公开(公告)日：2024-04-18

    申请号：US18546692

    申请日：2021-03-05

    申请人： Mitsubishi Electric Corporation

    发明人： Kazuyuki ONOE ,  Tsutomu YAMAGUCHI ,  Yohei HOKAMA

    IPC分类号： H01S5/227 ,  H01S5/042 ,  H01S5/22

    CPC分类号： H01S5/2275 ,  H01S5/04256 ,  H01S5/2205

    摘要： An optical semiconductor device according to the present disclosure includes: a first-conductivity-type semiconductor substrate having a projecting portion; second-conductivity-type intermediate layers formed on both sides of the projecting portion above the semiconductor substrate; a stripe-shaped mesa structure formed of a first-conductivity-type first cladding layer, an active layer, and a second-conductivity-type second cladding layer, which are laminated above a surface including a top of the projecting portion so as to be centered at the projecting portion; buried layers formed on both sides of the mesa structure, to block current; and a second-conductivity-type contact layer formed at surfaces of the mesa structure and the buried layers.

    SEMICONDUCTOR OPTICAL DEVICE WITH A BURIED HETEROSTRUCTURE (BH) HAVING REDUCED PARASITIC CAPACITANCE AND REDUCED INTER-DIFFUSION
    3.
    发明公开
    SEMICONDUCTOR OPTICAL DEVICE WITH A BURIED HETEROSTRUCTURE (BH) HAVING REDUCED PARASITIC CAPACITANCE AND REDUCED INTER-DIFFUSION 审中-公开

    公开(公告)号：US20230411931A1

    公开(公告)日：2023-12-21

    申请号：US17841983

    申请日：2022-06-16

    申请人： Applied Optoelectronics, Inc.

    发明人： Dapeng XU ,  Dion MCINTOSH-DORSEY ,  Huanlin ZHANG

    IPC分类号： H01S5/227 ,  H01S5/22

    CPC分类号： H01S5/227 ,  H01S5/34 ,  H01S5/2205

    摘要： A semiconductor optical device including a buried heterostructure (BH) has reduced parasitic capacitance and reduced inter-diffusion. The semiconductor optical device is manufactured by a regrowth on both sides of a mesa structure with an Fe-doped current blocking layer and an n-type cladding layer outside of an active region in the mesa structure. The Fe-doped current blocking layer and the n-type cladding layer may be disposed and configured such that Fe/Zn inter-diffusion is reduced or prevented by minimal contact between the Fe-doped current blocking layer and a highly Zn-doped cladding layer and by the n-type cladding layer, as will be described in greater detail below. A low Zn-doped or undoped material may be used for a thin cladding layer above the active region in the mesa structure to further suppress Zn/Fe inter-diffusion.

    Semiconductor laser with improved current conduction
    9.
    发明授权
    Semiconductor laser with improved current conduction 有权
    半导体激光器具有改善的电流传导

    公开(公告)号：US09373937B2

    公开(公告)日：2016-06-21

    申请号：US14430685

    申请日：2013-09-03

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Uwe Strauβ ,  Teresa Wurm ,  Adrian Stefan Avramescu ,  Georg Brüderl ,  Christoph Eichler ,  Sven Gerhard

    IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/30 ,  H01S5/343 ,  H01S5/32 ,  H01S5/40

    CPC分类号： H01S5/2031 ,  H01S5/2009 ,  H01S5/209 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031

    摘要： A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlxInyGa (1−x−y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.

    摘要翻译： 半导体激光器包括具有至少以下层结构的叠加层的层结构：n掺杂外层，第三波导层，布置有发光结构的有源区，第二波导层 阻挡层，第一波导层，p掺杂外层。 第一，第二和第三波导层具有至少Al x In y Ga（1-x-y）N。阻挡层的Al含量比相邻的第一波导层的Al含量大至少2％。 阻挡层的Al含量从第一波导层向第二波导层增加。 层结构具有双面等级。 双面灰度被布置在阻挡层的高度处，使得阻挡层或整个阻挡层的至少一部分具有比第一波导层更大的宽度。

    OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    10.
    发明申请
    OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    光学半导体器件及其制造方法

    公开(公告)号：US20160164259A1

    公开(公告)日：2016-06-09

    申请号：US15010820

    申请日：2016-01-29

    申请人： FUJITSU LIMITED

    发明人： Ayahito Uetake ,  Manabu Matsuda

    IPC分类号： H01S5/22 ,  H01S5/30 ,  H01S5/227

    CPC分类号： H01S5/2205 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/2213 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3013 ,  H01S5/34306 ,  H01S5/4031

    摘要： A semiconductor laser in a ridge waveguide structure includes: a semiconductor substrate; a lower cladding layer which is formed on the semiconductor substrate; an active layer and a semiconductor layer which are in parallel on the lower cladding layer and are connected with each other; a first upper cladding layer locally aligned above the active layer; a second upper cladding layer locally aligned above the semiconductor layer; and a third upper cladding layer locally aligned above the active layer to confine light which is guided in the active layer, wherein the semiconductor layer has a band gap which is larger than that of the active layer. According to this constitution, an optical semiconductor device with high reliability in which the ridge waveguide structure whose manufacturing is relatively easy is applied, and current diffusion and electrical crosstalk between lasers in the ridge waveguide structure are suppressed is enabled.

    摘要翻译： 脊波导结构中的半导体激光器包括：半导体衬底; 形成在半导体衬底上的下包层; 有源层和半导体层，其在下包层上并联并彼此连接; 位于有源层上方的局部对准的第一上包层; 在半导体层上方局部对准的第二上包层; 以及在有源层上面局部对准的第三上包层，以限制在有源层中被引导的光，其中半导体层具有比有源层的带隙大的带隙。 根据该结构，能够实现具有可靠性高的制造方法相对容易制造的脊形波导结构的光学半导体器件，并且抑制了脊波导结构中的激光器之间的电流扩散和电串扰。